BF P840 F ES D Low N oise A mpli fier for 3.4 G H z 3.8 G Hz ( B and 4 2/ 4 3) Technic al Rep ort T R 1129 Revision: Rev. 1.1 2013-06-05 RF and P r otecti on D evic es Edition 2013-06-05 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BFP840FESD Low Noise Amplifier for 3.4GHz- 3.8GHz Technical Report TR1129 Revision History: 2013-06-05 Previous Revision: Page Subjects (major changes since last revision) 17 to 22 Figure 17 to Figure 28: Temperature measurement results are included Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. 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Last Trademarks Update 2011-11-11 Technical Report, Rev. 1.1 3 / 26 2013-06-05 BFP840FESD Low Noise Amplifier for 3.4GHz- 3.8GHz Table of Content 1 1.1 1.2 1.3 Application Circuit and Performance Overview .............................................................................. 5 Summary of Measurement Results ...................................................................................................... 5 High Gain Low Noise Amplifier using BFP840FESD for 3.4 – 3.8 GHz LTE Application .................... 6 Schematics and Bill-of-Materials .......................................................................................................... 8 2 Measured Graphs ............................................................................................................................. 10 3 Evaluation Board and layout Information ...................................................................................... 23 4 Authors .............................................................................................................................................. 25 List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Figure 19 Figure 20 Figure 21 Figure 22 Figure 23 Figure 24 Figure 25 Figure 26 Figure 27 Figure 28 Figure 29 Figure 30 Figure 31 Figure 32 Package and pin connections of BFP840FESD in Topview ................................................................ 6 Schematics of BFP840FESD Low Noise Amplifier for 3.4 – 3.8 GHz Application ............................... 8 Insertion Power Gain of the 3.4 – 3.8 GHz LNA with BFP840FESD ................................................. 10 Wideband Insertion Power Gain of the 3.4 – 3.8 GHz LNA with BFP840FESD ................................ 10 Noise Figure of BFP840FESD LNA for 3400 - 2500 MHz ................................................................. 11 Reverse Isolation of the 3.4 – 3.8 GHz LNA with BFP840FESD ....................................................... 11 Input Matching of the 3.4 – 3.8 GHz LNA with BFP840FESD ........................................................... 12 Input Matching of the 3.4 – 3.8 GHz LNA with BFP840FESD (Smith Chart) .................................... 12 Output Matching of the 3.4 – 3.8 GHz LNA with BFP840FESD ........................................................ 13 Output Matching of the 3.4 – 3.8 GHz LNA with BFP840FESD (Smith Chart) .................................. 13 Wideband Stability k Factor of the 3.4 – 3.8 GHz LNA with BFP840FESD ....................................... 14 Wideband Stability Mu Factor of the 3.4 – 3.8 GHz LNA with BFP840FESD.................................... 14 1dB Compression Point of the BFP840FESD Circuit at 3600 MHz ................................................... 15 rd Output 3 Order Intercept Point of BFP840FESD at 3600 MHz........................................................ 15 OFF-Mode (Vcc = 0V, Icc = 0mA) S21 of the 3.4 – 3.8 GHz LNA with BFP840FESD ...................... 16 OFF-Mode (Vcc = 0V, Icc = 0mA) S21 of the 3.4 – 3.8 GHz LNA with BFP840FESD ...................... 16 Bias current in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V) ......................................... 17 Noise Figure of BFP840FESD LNA in the Temperature Range from -40˚C to 85˚C (Vcc=3.0V) .... 17 BFP840FESD LNA Insertion Power Gain in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V) ........................................................................................................................................................ 18 BFP840FESD LNA Reverse Isolation in the Temperature Range from -40˚C to 85˚C (Vcc=3.0V) 18 BFP840FESD LNA Input Matching in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V) .... 19 BFP840FESD LNA Input Matching in the Temperature Range from -40˚C to 85˚C (Smith Chart) (Vcc=3.0 V) ........................................................................................................................................ 19 BFP840FESD LNA Output Matching in the Temperature Range from -40˚C to 85˚C (Vcc=3.0V) ... 20 BFP840FESD LNA Output Matching in the temperature range from -40 ˚C to 85 ˚C (Smith Chart) (Vcc=3.0 V) ........................................................................................................................................ 20 1dB Compression Point of the BFP840FESD LNA at 3.6 GHz in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V) ............................................................................................................................ 21 K Factor of the BFP840FESD LNA in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V) .... 21 µ1 Factor of the BFP840FESD LNA in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V) ... 22 µ2 Factor of the BFP840FESD LNA in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V) ... 22 Photo Picture of Evaluation Board ..................................................................................................... 23 Zoom-In Picture of the BFP840FESD 3.4 – 3.8 GHz LNA Evaluation Board .................................... 23 Layout Proposal for RF Grounding of the 3.4 – 3.8 GHz LNA with BFP840FESD ........................... 24 PCB Layer Information ....................................................................................................................... 24 List of Tables Table 1 Table 2 Summary of Measurement Results ...................................................................................................... 5 Bill-of-Materials..................................................................................................................................... 9 Technical Report, Rev. 1.1 4 / 26 2013-06-05 BFP840FESD Low Noise Amplifier for 3.4GHz- 3.8GHz 1 Application Circuit and Performance Overview Device: BFP840FESD Application: Low Noise Amplifier for 3.4GHz- 3.8GHz (Band 42/ 43) PCB Marking: M13031106 0.6mmEDG TSFP-4-1 BFP840FESD 1.1 Summary of Measurement Results Table 1 Summary of Measurement Results Parameter Symbol Value Unit DC Voltage Vcc 3.0 V DC Current Icc 14.5 mA Frequency Range Freq 3400 3600 3800 MHz Gain G 18.2 17.7 17.2 dB Noise Figure NF 1.11 1.06 1.11 dB RLin 11.6 12.2 13.3 dB RLout 23.8 23.7 15.0 dB IRev 29.6 29.2 29.0 dB Input Return Loss Output Return Loss Reverse Isolation Input P1dB IP1dB -12.6 dBm Output P1dB OP1dB 4.1 dBm Input IP3 IIP3 -3 dBm Output IP3 OIP3 14.7 dBm k > 1.0 -- Stability Technical Report, Rev. 1.1 5 / 26 Note/Test Condition SMA and PCB losses (~0.05 dB) are subtracted Measured @ 3600MHz Measured @ 3600MHz, ∆f =1 MHz, Pin= - 30 dBm Measured up to 15 GHz 2013-06-05 BFP840FESD Low Noise Amplifier for 3.4GHz- 3.8GHz Application Circuit and Performance Overview 1.2 High Gain Low Noise Amplifier using BFP840FESD for 3.4 – 3.8 GHz LTE Application The BFP840FESD is a discrete hetero-junction bipolar transistor (HBT) specifically designed for high performance 3.4 – 3.8 GHz low noise amplifier (LNA) solutions for LTE connectivity applications. It combines the 80 GHz fT silicon-germanium:carbide (SiGe:C) B9HFM process with special device geometry engineering to reduce the parasitic capacitance between substrate and transistor that degrades high-frequency characteristics, resulting in an inherent input matching and a major improvement in power gain Band 42/43 together with a low noise figure performance that is industry's best. The BFP840FESD has an integrated 1.5kV HBM ESD protection which makes the device robust against electrostatic discharge and extreme RF input power. The device offers its high performance at low current and voltage and is especially well-suited for portable battery powered applications in which energy efficiency is a key requirement. The BFP840FESD is housed in flat-leads TSFP-4-1 package. Further variants are available in industry standard visible-leads SOT343 package (BFP840ESD) and in the low-height 0.31mm TSLP-3-9 package (BFR840L3RHESD) specially fitting into modules. Figure 1 shows the pin assignment of package of BFP840FESD in the top view: B 1 4 E XYs E 2 3 C BFPXXXF Figure 1 Package and pin connections of BFP840FESD in Topview Technical Report, Rev. 1.1 6 / 26 2013-06-05 BFP840FESD Low Noise Amplifier for 3.4GHz- 3.8GHz Application Circuit and Performance Overview This application note presents the measurement results of the Low Noise Amplifier using BFP840FESD for 3400 MHz to 3800 MHz LTE applications. It requires 10 passive 0402 SMD components and can provide 17.7 dB gain at 3600 MHz. The noise figure varies from 1.03 dB to 1.08 dB (SMA and PCB losses are subtracted) over the frequency band. The circuit achieves an input return loss of 12 dB and output return loss 24 dB. Furthermore, the circuit is unconditionally stable from 10 MHz to 15 GHz. However, Proper RF grounding on PCB has to be ensured in order to achieve stability k-factor > 1 (Figure 3111). At 3600 MHz, using two tones spacing of 1 MHz, the output third order intercept point OIP3 reaches 14.7 dBm. Besides, we obtain input 1dB input compression point IP1dB of -12.6 dBm at 3600 MHz. Technical Report, Rev. 1.1 7 / 26 2013-06-05 BFP840FESD Low Noise Amplifier for 3.4GHz- 3.8GHz Application Circuit and Performance Overview 1.3 Schematics and Bill-of-Materials Vcc= 3.0 V J3 DC Connector All passives are “0402“ case size Inductors: LQG Series Capacitors: Various I = 14.5 mA C3 39 pF R1 33 kΩ R2 20 Ω C4 39 pF L1 1.8 nH J1 RF Port1 INPUT Figure 2 C1 6.8 pF R3 100 Ω C2 1.2 pF Q1 BFP840FESD R4 5.1 Ω L2 1.6 nH J2 RF Port2 OUTPUT Please refer to chapter 5 for layout proposal Total Component Count = 10 including BFP840FESD transistor PCB = M13031106 BFP840FESD TSFP-4-1 PCB Board Material = Standard FR4 Layer spacing (top RF to internal ground plane): 0.2 mm Inductors = 2 (Low Q) Resistors = 4 Capacitors = 4 Schematics of BFP840FESD Low Noise Amplifier for 3.4 – 3.8 GHz Application Technical Report, Rev. 1.1 8 / 26 2013-06-05 BFP840FESD Low Noise Amplifier for 3.4GHz- 3.8GHz Application Circuit and Performance Overview Table 2 Bill-of-Materials Symbol Value Unit Size Manufacturer Comment C1 6.8 pF 0402 Various DC block & input matching C2 1.2 pF 0402 Various DC block & output matching C3 39 pF 0402 Various RF decoupling C4 39 pF 0402 Various RF decoupling L1 1.8 nH 0402 LQG Input matching L2 1.6 nH 0402 LQG Output matching and high frequency stability improvement R1 33 kΩ 0402 Various R2 20 Ω 0402 Various R3 100 Ω 0402 Various R4 5.1 Ω 0402 Various TSLP-4-1 Infineon Technologies Q1 Technical Report, Rev. 1.1 9 / 26 DC biasing DC biasing (provides DC negative feedback to stabilize DC operating point over temperature variation, transistor hFE variation, etc.) Stability and input/output mathcing Output matching and stability improvement BFP840FESD SiGe: C Heterojunction Bipolar RF Transistor 2013-06-05 BFP840FESD Low Noise Amplifier for 3.4GHz- 3.8GHz Measured Graphs 2 Measured Graphs Insertion Power Gain InBand 20 3600 MHz 17.7 dB 10 3400 MHz 18.2 dB 0 3800 MHz 17.2 dB -10 -20 -30 2000 3000 4000 5000 Frequency (MHz) Figure 3 Insertion Power Gain of the 3.4 – 3.8 GHz LNA with BFP840FESD Insertion Power Gain WideBand 20 3400 MHz 18.2 dB 10 3600 MHz 17.7 dB 0 3800 MHz 17.2 dB -10 -20 -30 100 Figure 4 2100 4100 6100 Frequency (MHz) 8100 10000 Wideband Insertion Power Gain of the 3.4 – 3.8 GHz LNA with BFP840FESD Technical Report, Rev. 1.1 10 / 26 2013-06-05 BFP840FESD Low Noise Amplifier for 3.4GHz- 3.8GHz Measured Graphs Noise Figure_3G4_3G8 2 NF(dB) 1.5 3400 MHz 1.08 dB 3800 MHz 1.08 dB 1 3600 MHz 1.03 dB 0.5 0 3400 Figure 5 3500 3600 Frequency (MHz) 3700 3800 Noise Figure of BFP840FESD LNA for 3400 - 2500 MHz Reverse Isolation -20 -40 3400 MHz -29.6 dB 3600 MHz -29.2 dB 3800 MHz -29 dB -60 -80 -100 2000 3000 4000 5000 Frequency (MHz) Figure 6 Reverse Isolation of the 3.4 – 3.8 GHz LNA with BFP840FESD Technical Report, Rev. 1.1 11 / 26 2013-06-05 BFP840FESD Low Noise Amplifier for 3.4GHz- 3.8GHz Measured Graphs Input Matching 0 3600 MHz -12.2 dB -10 3400 MHz -11.6 dB -20 3800 MHz -13.3 dB -30 -40 2000 3000 4000 5000 Frequency (MHz) Figure 7 Input Matching of the 3.4 – 3.8 GHz LNA with BFP840FESD Swp Max 5000MHz 2. 0 6 0. 0.8 1.0 Input Matching Smith 0. 4 0 3. 0 4. 5.0 0.2 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0 3800 MHz r 0.790891 x -0.327001 0.6 0.4 0.2 10.0 -10.0 3400 MHz r 0.93369 x -0.52487 3600 MHz r 0.831217 x -0.434733 -3 .0 .0 -2 -1.0 -0.8 -0 .6 .4 -0 Figure 8 -4 .0 -5. 0 2 -0. Swp Min 2000MHz Input Matching of the 3.4 – 3.8 GHz LNA with BFP840FESD (Smith Chart) Technical Report, Rev. 1.1 12 / 26 2013-06-05 BFP840FESD Low Noise Amplifier for 3.4GHz- 3.8GHz Measured Graphs Output Matching 0 3800 MHz -15 dB -10 -20 3400 MHz -23.8 dB 3600 MHz -23.7 dB -30 -40 2000 3000 4000 5000 Frequency (MHz) Figure 9 Output Matching of the 3.4 – 3.8 GHz LNA with BFP840FESD Swp Max 5000MHz 2. 0 6 0. 0.8 1.0 Output Matching Smith 0. 4 0 3. 0.2 5.0 10.0 3400 MHz r 0.965828 x -0.12063 -10.0 2 -0. 4 .0 -5. 0 -3 .0 .0 -2 -1.0 -0.8 -0 .6 .4 -0 Figure 10 5.0 4.0 3.0 2.0 10.0 1.0 0.8 0.6 0.4 0.2 3600 MHz r 1.13344 x 0.0318644 0 0 4. 3800 MHz r 1.36842 x 0.198658 Swp Min 2000MHz Output Matching of the 3.4 – 3.8 GHz LNA with BFP840FESD (Smith Chart) Technical Report, Rev. 1.1 13 / 26 2013-06-05 BFP840FESD Low Noise Amplifier for 3.4GHz- 3.8GHz Measured Graphs Stability k Factor 3 2.5 2 1.5 1 10081 MHz 1.3 0.5 0 100 5100 10100 15000 Frequency (MHz) Figure 11 Wideband Stability k Factor of the 3.4 – 3.8 GHz LNA with BFP840FESD Stability Mu Factor 4 MU1 MU2 3 2 1 0 10 5010 10010 15000 Frequency (MHz) Figure 12 Wideband Stability Mu Factor of the 3.4 – 3.8 GHz LNA with BFP840FESD Technical Report, Rev. 1.1 14 / 26 2013-06-05 BFP840FESD Low Noise Amplifier for 3.4GHz- 3.8GHz Measured Graphs Input 1dB Compression Point_3G6 25 -12.6 dBm 16.78 dB Gain(dB) 20 15 -25 dBm 17.78 dB 10 5 0 -25 -20 -15 -10 -5 0 Pin (dBm) Figure 13 1dB Compression Point of the BFP840FESD Circuit at 3600 MHz Output 3rd Order Intercept Point_3G6 0 3600 MHz -20.1 3601 MHz -20.1 Power (dBm) -20 -40 -60 3599 MHz -87.9 3602 MHz -89.7 -80 -100 3598 Figure 14 3599 3600 3601 Frequency (MHz) 3602 3603 rd Output 3 Order Intercept Point of BFP840FESD at 3600 MHz Technical Report, Rev. 1.1 15 / 26 2013-06-05 BFP840FESD Low Noise Amplifier for 3.4GHz- 3.8GHz Measured Graphs OFF_Mode 0 3400 MHz -25.1 dB 3800 MHz -24.7 dB -20 -40 3600 MHz -24.8 dB -60 -80 -100 1000 Figure 15 3000 5000 7000 Frequency (MHz) 9000 10000 OFF-Mode (Vcc = 0V, Icc = 0mA) S21 of the 3.4 – 3.8 GHz LNA with BFP840FESD OFF_Mode 0 3400 MHz -25.1 dB 3800 MHz -24.7 dB -20 -40 3600 MHz -24.8 dB -60 -80 -100 1000 Figure 16 3000 5000 7000 Frequency (MHz) 9000 10000 OFF-Mode (Vcc = 0V, Icc = 0mA) S21 of the 3.4 – 3.8 GHz LNA with BFP840FESD Technical Report, Rev. 1.1 16 / 26 2013-06-05 BFP840FESD Low Noise Amplifier for 3.4GHz- 3.8GHz Measured Graphs Bias Current 20 -40 DegC 16.8 18 Icc (mA) PlotCol(1,2) Bias_current 25 DegC 14.6 16 85 DegC 12 14 12 10 -40 Figure 17 -15 10 35 Temperature (DegC) 60 85 Bias current in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V) Noise Figure 1.5 1.4 1.3 NF (dB) 1.2 1.1 1 0.9 0.8 -40 °C 0.7 0 °C 25 °C 50 °C 85 °C 0.6 3.4 Figure 18 3.5 3.6 Frequency (GHz) 3.7 3.8 Noise Figure of BFP840FESD LNA in the Temperature Range from -40˚C to 85˚C (Vcc=3.0V) Technical Report, Rev. 1.1 17 / 26 2013-06-05 BFP840FESD Low Noise Amplifier for 3.4GHz- 3.8GHz Measured Graphs 22 20 3.4 GHz 18.9 dB 3.8 GHz 17.83 dB S21 (dB) 18 3.4 GHz 17.38 dB 16 3.8 GHz 16.4 dB 14 12 -40 °C 0 °C 25 °C 50 °C 85 °C 10 2 Figure 19 2.5 3 3.5 Frequency (GHz) 4 4.5 5 BFP840FESD LNA Insertion Power Gain in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V) -25 S12 (dB) -27 -29 -31 -33 -40 °C 0 °C 25 °C 50 °C 85 °C -35 3.2 Figure 20 3.4 3.6 Frequency (GHz) 3.8 4 BFP840FESD LNA Reverse Isolation in the Temperature Range from -40˚C to 85˚C (Vcc=3.0V) Technical Report, Rev. 1.1 18 / 26 2013-06-05 BFP840FESD Low Noise Amplifier for 3.4GHz- 3.8GHz Measured Graphs 0 -40 °C 0 °C 25 °C 50 °C 85 °C 3.4 GHz -9.963 dB 3.8 GHz -11.64 dB S11 (dB) -10 3.4 GHz -12.81 dB -20 3.8 GHz -15.58 dB -30 -40 2.5 Figure 21 3 3.5 4 4.5 Frequency (GHz) 5 5.5 6 BFP840FESD LNA Input Matching in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V) Swp Max 4GHz 2. 0 6 0. 0.8 1.0 S11 0. 4 0 3. 0 4. -40 °C 0 °C 25 °C 50 °C 5.0 85 °C 0.2 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 0.2 10.0 -10.0 2 -0. 4 .0 -5. 0 -3 .0 Figure 22 .0 -2 -1.0 -0.8 -0 .6 .4 -0 Swp Min 3.2GHz BFP840FESD LNA Input Matching in the Temperature Range from -40˚C to 85˚C (Smith Chart) (Vcc=3.0 V) Technical Report, Rev. 1.1 19 / 26 2013-06-05 BFP840FESD Low Noise Amplifier for 3.4GHz- 3.8GHz Measured Graphs 10 0 3.4 GHz -27.93 dB S22 (dB) -10 3.8 GHz -12.79 dB -20 -30 -40 -40 °C 0 °C 25 °C 50 °C 85 °C -50 2.5 Figure 23 3 3.5 4 4.5 Frequency (GHz) 5 5.5 6 BFP840FESD LNA Output Matching in the Temperature Range from -40˚C to 85˚C (Vcc=3.0V) Swp Max 4GHz 2. 0 6 0. 0.8 1.0 S22 0. 4 0 3. 0 4. 5.0 0.2 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 0.2 10.0 -10.0 2 -0. -4 .0 -5. 0 -1.0 -0.8 -0 .6 Figure 24 25 °C 50 °C 85 °C .0 -2 0 °C - -3 .0 4 -40 0. °C Swp Min 3.2GHz BFP840FESD LNA Output Matching in the temperature range from -40 ˚C to 85 ˚C (Smith Chart) (Vcc=3.0 V) Technical Report, Rev. 1.1 20 / 26 2013-06-05 BFP840FESD Low Noise Amplifier for 3.4GHz- 3.8GHz Measured Graphs 20 -20 dBm 18.263 -12.91 dBm 17.26 Output power (dBm) 18 16 -20 dBm 16.808 -12.84 dBm 15.8 14 -40 °C 0 °C 25 °C 50 °C 85 °C 12 -20 Figure 25 -18 -16 -14 -12 Input power (dBm) -10 -8 1dB Compression Point of the BFP840FESD LNA at 3.6 GHz in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V) K factor 5 4 3 2 10.18 GHz 1.117 1 -40 °C 0 °C 25 °C 50 °C 85 °C 0 0.2 5.2 10.2 15 Frequency (GHz) Figure 26 K Factor of the BFP840FESD LNA in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V) Technical Report, Rev. 1.1 21 / 26 2013-06-05 BFP840FESD Low Noise Amplifier for 3.4GHz- 3.8GHz Measured Graphs u1 4 3 2 1 -40 °C 0 °C 25 °C 50 °C 85 °C 0 0.01 5.01 10.01 15 Frequency (GHz) Figure 27 µ1 Factor of the BFP840FESD LNA in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V) u2 4 3 2 1 -40 °C 0 °C 25 °C 50 °C 85 °C 0 0.05 5.05 10.05 15 Frequency (GHz) Figure 28 µ2 Factor of the BFP840FESD LNA in the Temperature Range from -40˚C to 85˚C (Vcc=3.0 V) Technical Report, Rev. 1.1 22 / 26 2013-06-05 BFP840FESD Low Noise Amplifier for 3.4GHz- 3.8GHz Evaluation Board and layout Information 3 Evaluation Board and layout Information In this Technical Report, the following PCB is used: PCB Marking: M13031106 0.6mmEDG TSFP-4-1 BFP840FESD PCB Board Material: Standard FR4 ᵋr of PCB Material: 4.3 (FR4) Figure 29 Photo Picture of Evaluation Board Figure 30 Zoom-In Picture of the BFP840FESD 3.4 – 3.8 GHz LNA Evaluation Board Technical Report, Rev. 1.1 23 / 26 2013-06-05 BFP840FESD Low Noise Amplifier for 3.4GHz- 3.8GHz Evaluation Board and layout Information 0.3mm BFP840FESD 0.6mm Figure 31 Layout Proposal for RF Grounding of the 3.4 – 3.8 GHz LNA with BFP840FESD Vias FR4 Core, 0.2 mm Copper 35µm FR4 Prepreg, 0.8 mm Figure 32 PCB Layer Information Technical Report, Rev. 1.1 24 / 26 2013-06-05 BFP840FESD Low Noise Amplifier for 3.4GHz- 3.8GHz Authors 4 Authors Shamsuddin Ahmed, Application Engineer of Business Unit “RF and Protection Devices” Fang Jie, Application Engineer of Business Unit “RF and Protection Devices” Technical Report, Rev. 1.1 25 / 26 2013-06-05 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG TR1129