TR119 - BFP450 High IP3 ISM Band LNA

Technical Report, 2009-Feb-11
Technical Report
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High OIP3 LNA using BFP450 for 434MHz ISM band Application
Technical Report TR119
Device:
BFP450
Application: High-OIP3 LNA for 434MHz ISM Band
Applications
Revision:
Rev. 1.0
Date:
2009-Feb-11
RF and Protection Devices
Measurement Report
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Technical Report
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High OIP3 LNA using BFP450 for 434MHz ISM band Application
Measurement Report
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Technical Report
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High OIP3 LNA using BFP450 for 434MHz ISM band Application
1. Overview
Infineon Device: BFP450 NPN Silicon RF Bipolar Transistor
Application:
434MHz Industrial, Scientific and Medical band Application
PCB Marking:
BFP740 Application Board (Using Emitter Degeneration)
2. Summary of Measurement Results
Table 2-1: Summary of Measurement Results
Parameter
Symbol
Value
Unit
Frequency Range
Freq
434
MHz
DC Voltage
Vcc
2.2
V
DC Current
Icc
47.0
mA
Gain
G
23.8
dB
Noise Figure
NF
3.2
dB
Input Return Loss
RLin
10.3
dB
Output Return Loss
RLout
14.0
dB
Reverse Isolation
IRev
28.8
dB
Input P1dB
IP1dB
-9.3
dBm
Output P1dB
OP1dB
13.5
dBm
Input IP3
IIP3
6.8
dBm
Output IP3
OIP3
30,6
dBm
Stability
k
>1
--
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Note/Test Condition
[email protected]:-30dbm
Including SMA connectors
and PCB losses of 0.1dB
[email protected]:-30dbm
[email protected]:-26dB
∆f 1=MHz
Stability measured from
100MHz to 10GHz
2009-02-11
Technical Report
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High OIP3 LNA using BFP450 for 434MHz ISM band Application
3. Description:
This report presents the measurement results of the Low Noise Amplifier using the
transistor BFP450 from Infineon Technologies for the 434MHz ISM band application.
The LNA brings a gain of 23.8dB on the frequency band at 434MHz with a noise
figure of 3.2dB (including the SMA connector and PCB losses). Furthermore, this
Device provides an unconditionally stability from 100MHz to 10GHz.
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High OIP3 LNA using BFP450 for 434MHz ISM band Application
4. Schematics:
Figure 4-1: Schematics of the Application Circuit
Table 4-1: Bill of Materials
Symbol Value Unit
Size
Manufacturer
Comment
C1
20
pF
0402
various
Input DC Block
C2
18
pF
0402
various
Low Frequency Ground at
base
Improve IIP3
C3
100
nF
0603
various
RF Bypass/RF Block
C4
22
pF
0402
various
Improve IIP3
C5
8.2
pF
0402
various
Output Matching, Output DC
Block
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Technical Report
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High OIP3 LNA using BFP450 for 434MHz ISM band Application
L1
18
nH
0402
Murata LQW15A
DC Feed, Input Matching
L2
9.1
nH
0402
Murata LQW15A
DC Feed, Output Matching
R1
2.2
Ω
0402
various
DC Bias, drop voltage for
collector
R2
2.4
kΩ
0402
various
DC Bias for Base
R3
2.2
Ω
0402
various
Stability
M1
0.2x0.9
mm²
(microstrip line)
width x length in mm
M2
0.2x0.9
mm²
(microstrip line)
width x length in mm
Q1
Measurement Report
SOT343
Infineon
Technologies
6 / 10
BFP450 NPN bipolar
transistor
2009-02-11
Technical Report
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High OIP3 LNA using BFP450 for 434MHz ISM band Application
5. Measured Graphs
Figure 5-1: Transducer Power gain of BFP450
Figure 5-2: Input matching of BFP450
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High OIP3 LNA using BFP450 for 434MHz ISM band Application
Figure 5-3: Output matching of BFP450
Figure 5-4: Reverse Isolation of BFP450
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High OIP3 LNA using BFP450 for 434MHz ISM band Application
Figure 5-5: Stability of BFP450
Figure 5-6: Output IP3 Measurement of the BFP450
The result of the OIP3 Measurement is
OIP3 = Pf 1 +
Measurement Report
( Pf 2 − Pf 3 )
2
= −2,47 +
9 / 10
66,2
= 30,6dBm
2
2009-02-11
Technical Report
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High OIP3 LNA using BFP450 for 434MHz ISM band Application
6. Evaluation Board and Layout Information
Figure 6-1: PCB Picture
Figure 6-2: Layout Information
www.Infineon.com/silicondiscretes
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Published by Infineon Technologies AG
2009-02-11