B G M10 33 N7 Fron t - End Modul e f or Glo bal Na vig atio n Sat ellite S yste ms ( G NS S) A p plic atio n Using Lo w - Q Ind uc t ors Applic atio n N ote A N 261 Revision: Rev. 1.3 2012-04-27 RF and P r otecti on D evic es Edition 2012-04-27 Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 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BGM1033N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Application Note AN261 Revision History: 2012-04-27 Previous Revision: Rev. 1.2, 2011-10-05 Page Subjects (major changes since last revision) 10-11 GLONASS measurement results added Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. 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Last Trademarks Update 2011-11-11 Application Note AN261, Rev. 1.3 3 / 21 2012-04-27 BGM1033N7 FEM for GPS and GLONASS Applications using Low-Q Inductors List of Content, Figures and Tables Table of Content 1 BGM1033N7 GPS and GLONASS Front-End Module ..................................................................... 5 2 Introduction ........................................................................................................................................ 6 3 Description .......................................................................................................................................... 8 4 Application Circuit and Block Diagram ........................................................................................... 9 5 Measurement Results ...................................................................................................................... 10 6 Measured Graphs for GPS and GLONASS Bands ........................................................................ 12 7 Evaluation Board and layout Information ...................................................................................... 19 8 Authors .............................................................................................................................................. 20 List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Figure 19 Figure 20 BGM1033N7 in TSNP-7-10 Package................................................................................................... 5 RF System Overview: Mobile Phone ................................................................................................... 6 GNSS system with integrated GNSS FEM BGM1033N7 for mobile/portable and personal navigation devices ................................................................................................................................................. 7 Block Diagram of BGM1033N7 ............................................................................................................ 8 Schematic diagram of the BGM1033N7 (topview) application circuit .................................................. 9 Power Gain of BGM1033N7 for GPS and GLONASS bands ............................................................ 12 Noise Figure of BGM1033N7 for GPS and GLONASS bands ........................................................... 12 Wideband Insertion Power Gain including out-of-band attenuation of the BGM1033N7................... 13 Input Matching of BGM1033N7 for GPS and GLONASS bands ....................................................... 13 Output Matching of BGM1033N7 for GPS and GLONASS bands ..................................................... 14 Reverse Isolation of BGM1033N7 for GPS and GLONASS bands ................................................... 14 Input 1dB Compression Point of BGM1033N7 at supply voltage of 1.8V for GPS and GLONASS bands .................................................................................................................................................. 15 Input 1dB Compression Point of BGM1033N7 at supply voltage of 2.8V for GPS and GLONASS bands .................................................................................................................................................. 15 Carrier and intermodulation products of BGM1033N7 for GPS band at Vcc=1.8V ........................... 16 Carrier and intermodulation products of BGM1033N7 for GPS band at Vcc=2.8V ........................... 16 Stability Factor K of BGM1033N7 for GPS and GLONASS applications........................................... 17 Stability Factor µ1 of BGM1033N7 for GPS and GLONASS applications ......................................... 17 Stability Factor µ2 of BGM1033N7 for GPS and GLONASS applications ......................................... 18 Picture of Evaluation Board (detailed view) M110416 V3.0 ............................................................... 19 PCB Layer Information ....................................................................................................................... 19 List of Tables Table 1 Table 2 Table 3 Table 4 Pin Assignment of BGM1033N7 .......................................................................................................... 9 Bill-of-Materials..................................................................................................................................... 9 Electrical Characteristics (at room temperature), Vcc = Vpon = 1.8 V .............................................. 10 Electrical Characteristics (at room temperature), Vcc = Vpon = 2.8 V .............................................. 11 Application Note AN261, Rev. 1.3 4 / 21 2012-04-27 BGM1033N7 FEM for GPS and GLONASS Applications using Low-Q Inductors BGM1033N7 GPS and GLONASS Front-End Module 1 BGM1033N7 GPS and GLONASS Front-End Module 1.1 Features 1.2 Operating frequency: 1575.42 MHz and 1598.061605.38 MHz High Gain: 14.8 dB Low Noise Figure (GPS): 1.65 dB Low current consumption: 4.0 mA Out-of-band rejection in cellular bands: > 43dBc Input compression point in cellular bands: 30 dBm Supply voltage: 1.5 V to 3.6 V Tiny TSNP-7-10 leadless package 3 (2.3x1.7x0.73mm ) RF output internally matched to 50 Ω IEC61000-4-2 contact discharge of RF input pin in the application circuit: +/- 6 kV RF internally pre-matched RoHS compliant package (Pb-free) Figure 1 BGM1033N7 in TSNP-7-10 Package Applications - GPS (Global Positioning System) working in the L1 band at 1575.42 MHz - GLONASS (Globalnaya Navigatsionnaya Sputnikovaya Sistema) working in the L1 band from 1598.06 MHz to 1605.38 MHz Application Note AN261, Rev. 1.3 5 / 21 2012-04-27 BGM1033N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Introduction 2 Introduction Global Navigation Satellite System or GNSS receiver, as we know, works on the reception of location based information from satellite signals. There are several standards worldwide like GPS, GLONASS, Galileo and COMPASS Bei Du. However, the power levels of the satellite signals received, can be lower than -130 dBm. This poses a challenge on the sensitivity of the GNSS receiver. Along with this, the ever growing disturbing or jamming signals in the adjacent cellular bands makes the design of the receiver front-end even more difficult. The rapidly growing market for GNSS systems is driving the design of advanced and high-performance GNSS receivers. A simple overview of the GNSS RF system in a mobile phone or other handheld devices is shown in Figure 2. Mobile Phone / Handheld device Satellite GNSS signal Tranceiver module GSM800/GSM900/ DCS/PCS1800/ UMTS/ WLAN GNSS Receiver IC Figure 2 Int. LNA Tx Signal GNSS Signal < -130dBm GNSS RF Front-end module ESD protection Blocking Signal RF System Overview: Mobile Phone GNSS receivers for mobile or handheld applications are always under the threat of high power cellular signals. Due to the coexistence of GNSS and Cellular services, there is a strong coupling of the DCS/PCS and Cellular signals to the GNSS receiver. The performance of a standard integrated GNSS receiver chip cannot meet the specifications required for the present systems. An external RF front-end is essential to achieve this required performance. The most important prerequisites for the front-end of a GNSS receiver are low noise figure and sufficient amplification of the desired signal together with high attenuation of the jamming signals. Application Note AN261, Rev. 1.3 6 / 21 2012-04-27 BGM1033N7 FEM for GPS and GLONASS Applications using Low-Q Inductors 2.1 Systems overview of a GNSS receiver Several configurations can be adopted for a GNSS receiver chain. In all configurations, as mentioned earlier, a RF front-end like BGM1033N7 is placed between the antenna and the GNSS receiver chip. Mobile/portable devices as well personal navigation devices request decreasing form factor used by the implementation of the GNSS function in the devices. BGM1033N7 supports the designers to minimize the area in the front-end. Such a configuration is shown in Figure 3. The BGM1033N7 can also be used for the active antenna module. Embedded ANT BGM1033N7 LNA BPF GNSS Receiver IC Figure 3 GNSS system with integrated GNSS FEM BGM1033N7 for mobile/portable and personal navigation devices Application Note AN261, Rev. 1.3 7 / 21 2012-04-27 BGM1033N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Description 3 Description The BGM1033N7 is a combination of a low-insertion-loss pre-filter with Infineon’s high performance low noise amplifier (LNA) for Global Positioning System (GPS) and Globalnaya Navigatsionnaya Sputnikovaya Sistema (GLONASS) applications. Both, GPS and GLONASS frequency bands, can be used at the same time. Through the low insertion loss of the filter, the BGM1033N7 provides 14.8 dB gain, 1.65 dB noise figure and high linearity performance. In addition BGM1033N7 provides very high out-of-band attenuation in conjunction with a high input compression point. It can withstand IEC61000-4-2 ESD contact discharge at the RF input as high as 6 kV in the application circuit shown in Figure 4. Its current consumption is as low as 4.0 mA. It operates over the 1.5 V to 3.6 V supply voltage range. Figure 4 Block Diagram of BGM1033N7 Application Note AN261, Rev. 1.3 8 / 21 2012-04-27 BGM1033N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Application Circuit and Block Diagram 4 Application Circuit and Block Diagram The BGM1033N7 is internally matched at the output to 50 Ohm. The LNA bias circuitry is also integrated on chip. Therefore, only three external components are required in the application. The application schematic is shown in Figure 5 and the function of the external passives is listed in Table 2. 4.1 Application Schematic L1 8.2nH BGM1033N7 (Topview) L2 7.5nH SO 4 RFIN 3 5 PON 2 7 GND AI 6 RFOUT 1 VCC C1 0.1µF Figure 5 Table 1 Schematic diagram of the BGM1033N7 (topview) application circuit Pin Assignment of BGM1033N7 Pin No. Symbol Function 1 VCC Power Supply 2 PON Power ON/OFF 3 RFIN RF Input 4 SO Pre-Filter Output 5 AI LNA Input 6 RFOUT RF Output 7 GND DC ground Table 2 Bill-of-Materials Symbol Value Unit Size C1 L1 0.1 µF 0402 Various Supply filtering 8.2 nH 0402 Murata LQG15 series Matching / ESD Inductor L2 7.5 nH 0402 Murata LQG15 series Input Matching Q1 BGM1033N7 TSNP-7-10 Infineon GPS/GLONASS FEM Application Note AN261, Rev. 1.3 Manufacturer 9 / 21 Comment 2012-04-27 BGM1033N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Measurement Results 5 Measurement Results Measurement results of the BGM1033N7 are presented in this section. The measurements are performed on the Infineon application board at room temperature. The performances of the BGM1033N7 are here provided for the voltage of 1.8V (Table 3) and 2.8V (Table 4). The data exclude PCB and SMA connector losses, unless otherwise mentioned. Table 3 Electrical Characteristics (at room temperature), Vcc = Vpon = 1.8 V Parameter Symbol Value Unit DC Voltage Vcc 1.8 V DC Current Icc 4.2 mA Navigation System Sys GPS GLONASS Frequency Range Freq 1575.42 1598-1606 MHz Gain G 15.0 14.6 dB Noise Figure NF 1.81 2.18 dB RLin 20.9 26.6 dB RLout 21.0 18.8 dB IRev 21.5 21.7 dB Input P1dB IP1dB -8.3 -7.9 dBm Output P1dB OP1dB 5.7 5.7 dBm IIP3 -6.2 -5.8 dBm Input Return Loss Output Return Loss Reverse Isolation Input IP3 In-band Comment/Test Condition PCB and SMA connectors of 0.1 dB losses substracted fgps = 1575.42 MHz f GLONASS = 1605 MHz f1gps = 1575.42 MHz, f2gps = 1576.42 MHz Output IP3 OIP3 In-band 8.8 8.8 dBm f1GLONASS =1602 MHz, f2GLONASS =1603 MHz P1IN = P2IN = -30 dBm 1 Rej750M 53.6 dBc f = 750 MHz 1 Rej900M 50.5 dBc f = 806 MHz - 928 MHz 1 Rej1800M 41.8 dBc f = 1710 MHz - 1980 MHz 1 Rej2400M 56.0 dBc f = 2400 MHz - 2500 MHz Input P1dB IP1dB900M 28.0 dBm f = 900 MHz Input P1dB IP1dB1710M 31.0 dBm f = 1710 MHz IIP3OOB 65.5 dBm k >1 Rejection 750MHz Rejection 900MHz Rejection 1800MHz Rejection 2400MHz Input IP3 out-of-band Stability 1 -- f1 = 1712.7 MHz, f2 = 1850 MHz P1IN = +10 dBm, P2IN = +10 dBm Unconditionnally Stable from 0 to 10GHz Rejection is defined as following: [Gain at 1575.42 MHz] – [Attenuation@stopband frequency Application Note AN261, Rev. 1.3 10 / 21 2012-04-27 BGM1033N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Measurement Results Table 4 Electrical Characteristics (at room temperature), Vcc = Vpon = 2.8 V Parameter Symbol Value Unit DC Voltage Vcc 2.8 V DC Current Icc 4.3 mA Navigation System Sys GPS GLONASS Frequency Range Freq 1575.42 1598-1606 MHz Gain G 15.1 14.7 dB Noise Figure NF 1.82 2.18 dB RLin 21.3 23.0 dB RLout 19.6 19.0 dB IRev 21.8 22.0 dB Input P1dB IP1dB -7.1 -6.7 dBm Output P1dB OP1dB 7 7 dBm IIP3 -6.1 -5.7 dBm Input Return Loss Output Return Loss Reverse Isolation Input IP3 In-band Comment/Test Condition PCB and SMA connectors of 0.1 dB losses substracted fgps = 1575.42 MHz f GLONASS = 1605 MHz f1gps = 1575.42 MHz, f2gps = 1576.42 MHz Output IP3 OIP3 In-band 9 9 dBm f1GLONASS =1602 MHz, f2GLONASS =1603 MHz Input power= -30 dBm 1 Rej750M 53.6 dBc f = 750 MHz 1 Rej900M 50.5 dBc f = 806 MHz - 928 MHz 1 Rej1800M 41.8 dBc f = 1710 MHz - 1980 MHz 1 Rej2400M 56.0 dBc f = 2400 MHz - 2500 MHz Input P1dB IP1dB900M 28.0 dBm f = 900 MHz Input P1dB IP1dB1710M 31.3 dBm f = 1710 MHz IIP3OOB 65.6 dBm k >1 -- Rejection 750MHz Rejection 900MHz Rejection 1800MHz Rejection 2400MHz Input IP3 out-of-band Stability 1 f1 = 1712.7 MHz, f2 = 1850 MHz P1IN = +10 dBm, P2IN = +10 dBm Unconditionnally Stable from 0 to 10GHz Rejection is defined as following: [Gain at 1575.42 MHz] – [Attenuation@stopband frequency Application Note AN261, Rev. 1.3 11 / 21 2012-04-27 BGM1033N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Measured Graphs for GPS and GLONASS Bands 6 Measured Graphs for GPS and GLONASS Bands Figure 6 Power Gain of BGM1033N7 for GPS and GLONASS bands Figure 7 Noise Figure of BGM1033N7 for GPS and GLONASS bands Application Note AN261, Rev. 1.3 12 / 21 2012-04-27 BGM1033N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Measured Graphs for GPS and GLONASS Bands Figure 8 Wideband Insertion Power Gain including out-of-band attenuation of the BGM1033N7 Figure 9 Input Matching of BGM1033N7 for GPS and GLONASS bands Application Note AN261, Rev. 1.3 13 / 21 2012-04-27 BGM1033N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Measured Graphs for GPS and GLONASS Bands Figure 10 Output Matching of BGM1033N7 for GPS and GLONASS bands Figure 11 Reverse Isolation of BGM1033N7 for GPS and GLONASS bands Application Note AN261, Rev. 1.3 14 / 21 2012-04-27 BGM1033N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Measured Graphs for GPS and GLONASS Bands Figure 12 Input 1dB Compression Point of BGM1033N7 at supply voltage of 1.8V for GPS and GLONASS bands Figure 13 Input 1dB Compression Point of BGM1033N7 at supply voltage of 2.8V for GPS and GLONASS bands Application Note AN261, Rev. 1.3 15 / 21 2012-04-27 BGM1033N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Measured Graphs for GPS and GLONASS Bands In Band OIP3 for GPS 0 BGM1033_LQ_1.8V -10 Power Level (dBm) -20 1575.42 MHz -15.15 1576.42 MHz -15.19 -30 -40 1577.42 MHz -63.08 -50 -60 -70 -80 -90 -100 -110 1573.5 Figure 14 1574.5 1575.5 1576.5 Frequency (MHz) 1577.5 1578 Carrier and intermodulation products of BGM1033N7 for GPS band at Vcc=1.8V In Band OIP3 for GPS 0 BGM1033_LQ_2.8V -10 Power Level (dBm) -20 -30 1575.42 MHz -15.08 1576.42 MHz -15.1 -40 1577.42 MHz -63.31 -50 -60 -70 -80 -90 -100 -110 1573.5 Figure 15 1574.5 1575.5 1576.5 Frequency (MHz) 1577.5 1578 Carrier and intermodulation products of BGM1033N7 for GPS band at Vcc=2.8V Application Note AN261, Rev. 1.3 16 / 21 2012-04-27 BGM1033N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Measured Graphs for GPS and GLONASS Bands Figure 16 Stability Factor K of BGM1033N7 for GPS and GLONASS applications Figure 17 Stability Factor µ1 of BGM1033N7 for GPS and GLONASS applications Application Note AN261, Rev. 1.3 17 / 21 2012-04-27 BGM1033N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Measured Graphs for GPS and GLONASS Bands Figure 18 Stability Factor µ2 of BGM1033N7 for GPS and GLONASS applications Application Note AN261, Rev. 1.3 18 / 21 2012-04-27 BGM1033N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Evaluation Board and layout Information 7 Evaluation Board and layout Information In this application note, the following PCB is used: PCB Marking: M110416 V3.0 PCB material: FR4 r of PCB material: 4.3 Figure 19 Picture of Evaluation Board (detailed view) M110416 V3.0 Vias FR4, 0.2mm Copper 35µm Figure 20 FR4, 0.8mm PCB Layer Information Application Note AN261, Rev. 1.3 19 / 21 2012-04-27 BGM1033N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Authors 8 Authors Shamsuddin Ahmed, Application Engineer of Business Unit “RF and Protection Devices” Jagjit Singh Bal, Application Engineer of Business Unit “RF and Protection Devices” Dr. Chih-I Lin, Senior Staff Engineer of Business Unit “RF and Protection Devices” Application Note AN261, Rev. 1.3 20 / 21 2012-04-27 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG AN261