B GA 777 N 7 Singl e - Ba nd U MT S LN A Singl e - Ba nd U MT S LN A B G A777 N 7 Sup por tin g LTE B and - 41 (2 496 - 269 0 MHz ) Applic atio n N ote A N 370 Revision: Rev. 1.0 2014-03-27 RF and P r otecti on D evic es BGA777N7 Single-Band UMTS LNA for LTE Band-41 (2496-2690 MHz) Application Note AN370 Revision History: 2014-03-27 Previous Revision: Page Subjects (major changes since last revision) Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Application Note AN370, Rev. 1.0 2 / 29 2014-03-27 BGA777N7 Single-Band UMTS LNA for LTE Band-41 (2496-2690 MHz) Introduction Table of Content 1 1.1 1.2 1.3 Introduction ........................................................................................................................................ 5 Introduction About 3G and 4G ............................................................................................................. 5 Applications .......................................................................................................................................... 7 Infineon LNAs for 3G, 4G LTE and LTE-A Applications ...................................................................... 8 2 2.1 2.2 BGA777N7 Overview ........................................................................................................................ 11 Features ............................................................................................................................................. 11 Description ......................................................................................................................................... 11 3 3.1 3.2 3.3 3.4 3.5 Application Circuit and Performance Overview ............................................................................ 14 Schematics and Bill-of-Materials ........................................................................................................ 14 Comparison between Application Circuit 1 and Circuit 2 ................................................................... 15 Summary of Measurement Results of Application Circuit 1 ............................................................... 16 Summary of Measurement Results of Application Circuit 2 ............................................................... 17 BGA777N7 LNA for LTE Band-41 (2496-2690 MHz) for Circuit 1 ..................................................... 18 4 Measurement Graphs for Circuit 1 ................................................................................................. 19 5 Evaluation Board and Layout Information .................................................................................... 27 6 Authors .............................................................................................................................................. 28 7 Remark .............................................................................................................................................. 28 List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Figure 19 Figure 20 Figure 21 Figure 22 Figure 23 Figure 24 Figure 25 Figure 26 Example of Application Diagram of RF Front-End for 3G and 4G Systems. ....................................... 7 BGA777N7 in TSNP-7-1 .................................................................................................................... 11 Equivalent Circuit of BGA777N7 ........................................................................................................ 12 Package and Pin Connections of BGA777N7 .................................................................................... 12 Footprint Recommendation 1 for the BGA777N7 Package ............................................................... 13 Footprint Recommendation 2 for the BGA777N7 Package ............................................................... 13 Schematics of the BGA777N7 Application Circuit 1 .......................................................................... 14 Schematics of the BGA777N7 Application Circuit 2 .......................................................................... 15 Insertion Power Gain (Narrowband) of the BGA777N7 for Band-41 Applications ............................. 19 Insertion Power Gain (Wideband) of the BGA777N7 for Band-41 Applications ................................ 19 Noise Figure of the BGA777N7 for Band-41 Applications (High Gain Mode) ................................... 20 Input Matching of the BGA777N7 for Band-41 Applications .............................................................. 20 Input Matching (Smith Chart) of the BGA777N7 for Band-41 Applications ....................................... 21 Output Matching of the BGA777N7 for Band-41 Applications ........................................................... 21 Output Matching (Smith Chart) of the BGA777N7 for Band-41 Applications .................................... 22 Reverse Isolation of the BGA777N7 for Band-41 Applications .......................................................... 22 Stability K-factor of the BGA777N7 for Band-41 Applications ........................................................... 23 Stability Mu1-factor of the BGA777N7 for Band-41 Applications ....................................................... 23 Stability Mu2-factor of the BGA777N7 for Band-41 Applications ....................................................... 24 Input 1dB Compression Point of the BGA777N7 for Band-41 Applications (High Gain Mode) ......... 24 Input 1dB Compression Point of the BGA777N7 for Band-41 Applications (Low Gain Mode) .......... 25 rd Input 3 Intercept Point of the BGA777N7 for Band-41 Applications (High Gain Mode) ................... 25 rd Input 3 Intercept Point of the BGA777N7 for Band-41 Applications (Low Gain Mode) .................... 26 Picture of Evaluation Board (Overview) of BGA777N7 V1.0 ............................................................. 27 Picture of Evaluation Board (Detailed View) of BGA777N7 V1.0 ...................................................... 27 PCB Layer Stack ................................................................................................................................ 27 List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 LTE Band Assignment ......................................................................................................................... 5 Infineon Product Portfolio of LNAs for 4G LTE and LTE-A Applications ............................................. 9 Infineon Product Portfolio of LNAs for 3G and 4G Applications ........................................................ 10 Pin Assignment of BGA777N7 ........................................................................................................... 13 Bill-of-Materials of Application Circuit 1 ............................................................................................. 14 Application Note AN370, Rev. 1.0 3 / 29 2014-03-27 BGA777N7 Single-Band UMTS LNA for LTE Band-41 (2496-2690 MHz) Introduction Table 6 Table 7 Table 8 Table 9 Table 10 Table 11 Bill-of-Materials of Application Circuit 2 ............................................................................................. 15 Comparision Between Application circuit 1 and circuit 2 for Band-41 VCC = 2.8 V, TA = 25 °C ......... 15 Electrical Characteristics of BGA777N7 at High Gain Mode for Band-41 ......................................... 16 Electrical Characteristics of BGA777N7 at Low Gain Mode for Band-41 .......................................... 16 Electrical Characteristics of BGA777N7 at High Gain Mode for Band-41 ......................................... 17 Electrical Characteristics of BGA777N7 at Low Gain Mode for Band-41 .......................................... 17 Application Note AN370, Rev. 1.0 4 / 29 2014-03-27 BGA777N7 Single-Band UMTS LNA for LTE Band-41 (2496-2690 MHz) Introduction 1 Introduction 1.1 Introduction About 3G and 4G The mobile technologies for smartphones have seen tremendous growth in recent years. The data rate required from mobile devices has increased significantly over the evolution modern mobile technologies starting from the first 3G/3.5G technologies (UMTS & WCDMA, HSPA & HSPA+) to the recently 4G LTE-Advanced (LTE-A, LTE-B, LTE-C, … ). LTE-Advanced can support download data rates of up to 1 Gbps and upload data rates up to 500 Mbps. Advanced technologies such as diversity Multiple Input Multiple Output (MIMO) and Carrier Aggregation (CA) are adopted to achieve such higher data rate requirements. MIMO technology, commonly referred as the diversity path in smartphones, has attracted attention for the significant increasement in data throughput and link range without additional bandwidth or increased transmit power. The technology supports scalable channel bandwidth from 1.4 to 20 MHz. The ability of 4G LTE to support bandwidths up to 20 MHz and to have more spectral efficiency by using high order modulation methods like QAM-64 is of particular importance as the demand for higher wireless data rates continues to grow fast. Carrier aggregation used in LTE-Advanced combines up to 5 carriers and widens bandwidths up to 100 MHz to increase the user rates, across FDD and TDD. Countries all over the world have released various frequencies bands for the 4G applications.Table 1 shows the band assignment for the LTE bands worldwide. Table 1 Band No. LTE Band Assignment Uplink Frequency Range Downlink Frequency Range Comment 1 1920-1980 MHz 2110-2170 MHz FDD 2 1850-1910 MHz 1930-1990 MHz FDD 3 1710-1785 MHz 1805-1880 MHz FDD 4 1710-1755 MHz 2110-2155 MHz FDD 5 824-849 MHz 869-894 MHz FDD 6 830-840 MHz 875-885 MHz FDD 7 2500-2570 MHz 2620-2690 MHz FDD 8 880-915 MHz 925-960 MHz FDD 9 1749.9-1784.9 MHz 1844.9-1879.9 MHz FDD 10 1710-1770 MHz 2110-2170 MHz FDD 11 1427.9-1452.9 MHz 1475.9-1500.9 MHz FDD Application Note AN370, Rev. 1.0 5 / 29 2014-03-27 BGA777N7 Single-Band UMTS LNA for LTE Band-41 (2496-2690 MHz) Introduction Table 1 Band No. LTE Band Assignment Uplink Frequency Range Downlink Frequency Range Comment 12 698-716 MHz 728-746 MHz FDD 13 777-787 MHz 746-756 MHz FDD 14 788-798 MHz 758-768 MHz FDD 17 704-716 MHz 734-746 MHz FDD 18 815-830 MHz 860-875 MHz FDD 19 830-845 MHz 875-890 MHz FDD 20 832-862 MHz 791-821 MHz FDD 21 1447.9-1462.9 MHz 1495.9-1510.9 MHz FDD 22 3410-3500 MHz 3510-3600 MHz FDD 23 2000-2020 MHz 2180-2200 MHz FDD 24 1626.5-1660.5 MHz 1525-1559 MHz FDD 25 1850-1915 MHz 1930-1995 MHz FDD 26 814-849 MHz 859-894 MHz FDD 27 807-824 MHz 852-869 MHz FDD 28 703-748 MHz 758-803 MHz FDD 29 N/A 716-728 MHz FDD 33 1900-1920 MHz TDD 34 2010-2025 MHz TDD 35 1850-1910 MHz TDD 36 1930-1990 MHz TDD 37 1910-1930 MHz TDD 38 2570-2620 MHz TDD 39 1880-1920 MHz TDD 40 2300-2400 MHz TDD 41 2496-2690 MHz TDD 42 3400-3600 MHz TDD 43 3600-3800 MHz TDD 44 703-803 MHz TDD In order to cover all the bands from different countries in a unique device, mobile phones and data cards are usually equipped with sevaral bands. Some typical examples are quad-band FDD systems are the following band combinations: 1/2/5/8, 1/3/5/7 and 3/7/5/17. Besides these FDD-LTE frequency bands, several TD-LTE bands are available around the world. Some of these bands are band-42 in Australia and UK, band-38 in the US and China, and band-40 in India and Australia. Application Note AN370, Rev. 1.0 6 / 29 2014-03-27 BGA777N7 Single-Band UMTS LNA for LTE Band-41 (2496-2690 MHz) Introduction 1.2 Applications Figure 1 shows an example of the simplified block diagram of the RF front-end of a 3G and 4G system. A SPnT switch connects one side the antenna and several duplexers for different 4G bands on the other side. Every duplexer is connected to the transmitting (TX) and receiving (RX) paths of each band. The external LNA, here for example Infineon single-band LNA BGA777N7, is placed on the RX path between the duplex and the bandpass SAW filter. The output of the SAW filter is connected to the receiver input of the transceiver IC. Depending on the number of bands designed in a device, various numbers of LNAs are required in a system. Recently, even mobile devices with 5 modes 13 bands are under discussion. Not only for the main pathes, but also for the diversity pathes, the external LNAs are widely used to boost end user experience while using mobile devices for video and audio streaming. Besides low noise amplifiers, Infineon Technologies also offers solutions for high power highly linear antenna switches, band switches as well as power detection diodes for power amplifiers. Figure 1 Example of Application Diagram of RF Front-End for 3G and 4G Systems. Application Note AN370, Rev. 1.0 7 / 29 2014-03-27 BGA777N7 Single-Band UMTS LNA for LTE Band-41 (2496-2690 MHz) Introduction 1.3 Infineon LNAs for 3G, 4G LTE and LTE-A Applications With the increasing wireless data speed and with the extended link distance of mobile phones and 4G data cards, the requirements on the sensitivity are much higher. Infineon offers different kind of low noise amplifiers (LNAs) to support the customers for mobile phones and data cards of 4G LTE and LTE-A to improve their system performance to meet the requirements coming from the networks/service providers. The benefits to use external LNAs in equipment for 4G LTE and LTE-A applications are: - Flexible design to place the front-end components: due to the size constraint, the modem antenna and the front-end can not be always put close to the transceiver IC. The path loss in front of the integrated LNA on the transceiver IC increases the system noise figure noticeably. An external LNA physically close to the antenna can help to eliminate the path loss and reduce the system noise figure. Therefore the sensitivity can be improved by several dB. - Support RX carrier aggregation where two LNAs can be tuned on at the same time. - Boost the sensitivity by reducing the system noise figure: external LNA has lower noise figure than the integrated LNA on the transceiver IC. - Bug fix to help the transceiver ICs to fulfill the system requirements. - Increase the dynamic range of the power handling. Infineon Technologies is the leading company with broad product portfolio to offer high performance SiGe:C bipolar transistor LNAs and MMIC LNAs for various wireless applications by using the industrial standard silicon process. The MMIC LNA portfolio includes: - New generation single band LTE LNAs like BGA7H1N6 for high-band (HB, 2300-2700 MHz), BGA7M1N6 for mid-band (MB, 1805-2200 MHz) and BGA7L1N6 for low-band (LB, 728-960 MHz) are available. - New generation LTE LNA Banks are quad-band. Currently there are six different types of these new LTE LNA Banks which are shown in Table 2. Each LNA bank combines four various bands LNA from the high-band (HB, 2300-2700 MHz), mid-band (MB, 1805-2200 Application Note AN370, Rev. 1.0 8 / 29 2014-03-27 BGA777N7 Single-Band UMTS LNA for LTE Band-41 (2496-2690 MHz) Introduction MHz) and low-band (LB, 728-960 MHz). Two of the four LNAs in one LNA bank can be turned on at the same time to support carrier aggregassion. The broad product portfolio with highest integration and best features in noise figure and flexible band selection helps designers to design mobile phones and data cards with outstanding performance. Therefore Infineon LNAs and LNA banks are widely used by mobile phone vendors. Table 2 Infineon Product Portfolio of LNAs for 4G LTE and LTE-A Applications Frequency Range 728-960 MHz 1805MHz-2200MHz 2300 MHz-2690 MHz Comment Single-Band LNA BGA7L1N6 1X BGA7M1N6 1X BGA7L1N6 Quad-Band LNA bank 1X BGM7MLLH4L12 1X 2X 1X BGM7LMHM4L12 1X 2X 1X 1X 3X BGM7HHMH4L12 BGM7MLLM4L12 2X 2X BGM7LLHM4L12 2X 1X BGM7LLMM4L12 2X 2X 1X In addition, the older generation of LTE and 3G LNAs are featured with gain switching functions which is often helpful for the cases that string or weak signal environment could happen in the field. Table 3 shows the abailable band combinations: - Single-band LNAs like BGA777L7 / BGA777N7 for high-band (2300-2700 MHz), BGA711L7 / BGA711N7 for mid-band (MB, 1700-2300 MHz) and BGA751L7 / BGA751N7, BGA728L7/BGA728N7, BGA713L7/BGA713N7 for low-band (LB, 700-1000 MHz) are available. - Dual-band LNA BGA771L16 supports 1x mid-band (MB, 1700-2300 MHz) and 1x low-band (LB, 700-1000 MHz). - Triple-band LNAs BGA734N16, BGA735N16 and BGA736N16 are available to cover the most bands. All of the three triple-band LNAs can support designs covering 2x high-bands and 1x low-band. Application Note AN370, Rev. 1.0 9 / 29 2014-03-27 BGA777N7 Single-Band UMTS LNA for LTE Band-41 (2496-2690 MHz) - Both BGA748N16 and BGA749N16 are quad-band LNAs. BGA748N16 can cover 2x highand 2x low-bands and BGA749N16 can cover 1x high-band and 3x low-bands. Table 3 Infineon Product Portfolio of LNAs for 3G and 4G Applications Frequency Range 700-1000 MHz 1700-2200 MHz 2100-2700 MHz Comment Single-Band LNA BGA711N7/L7 BGA751N7/L7 1X 1X BGA777N7/L7 1X BGA728L7/N7 1X BGA713L7/N7 Dual-Band LNA 1X BGA771L16 Triple-Band LNA 1X 1X BGA734L16 1X 1X 1X BGA735N16 1X 1X 1X 1X 1X 1X BGA748N16 2X 1X 1X BGA749N16 3X BGA736N16 Quad-Band LNA Application Note AN370, Rev. 1.0 1X 10 / 29 2014-03-27 BGA777N7 Single-Band UMTS LNA for LTE Band-41 (2496-2690 MHz) BGA777N7 Overview 2 BGA777N7 Overview 2.1 Features Main features: • Gain: 16.4 / -6.8 dB in high / low gain mode • Noise figure: 1.12 dB in high gain mode • Supply current: 4.5 / 0.5 mA in high / low gain mode • Standby mode (< 2 μA typ.) • Output internally matched to 50 Ω • Inputs pre-matched to 50 Ω • 2 kV HBM ESD protection • Low external component count • Small leadless TSNP-7-1 package (2.0 x 1.3 x 0.39 mm3) Figure 2 BGA777N7 in TSNP-7-1 • Pb-free (RoHS compliant) package 2.2 Description The BGA777N7 is a low current single-band low noise amplifier MMIC for UMTS bands 7, 38 40 and 41. The LNA is based upon Infineon’s proprietary and cost-effective SiGe:C technology and comes in a low profile TSNP-7-1 leadless green package. This document specifies electrical parameters, pinout, application circuit and packaging of the chip. The device features dynamic gain control, temperature stabilization, standby mode and 2 kV ESD protection on-chip as well as matching off chip. Application Note AN370, Rev. 1.0 11 / 29 2014-03-27 BGA777N7 Single-Band UMTS LNA for LTE Band-41 (2496-2690 MHz) BGA777N7 Overview Figure 3 Equivalent Circuit of BGA777N7 Figure 4 Package and Pin Connections of BGA777N7 Application Note AN370, Rev. 1.0 12 / 29 2014-03-27 BGA777N7 Single-Band UMTS LNA for LTE Band-41 (2496-2690 MHz) BGA777N7 Overview Figure 5 Footprint Recommendation 1 for the BGA777N7 Package Figure 6 Footprint Recommendation 2 for the BGA777N7 Package Table 4 Pin Assignment of BGA777N7 Pin No. Symbol Function 1 RFIN LNA input 2 VEN Band select control 3 VGS Gain step control 4 VCC Supply voltage 5 RRef Bias current reference resistor (high gain mode) 6 RFOUT LNA output 7 GND Package paddle; ground connection and control circuitry Application Note AN370, Rev. 1.0 13 / 29 2014-03-27 BGA777N7 Single-Band UMTS LNA for LTE Band-41 (2496-2690 MHz) Application Circuit and Performance Overview 3 Application Circuit and Performance Overview Device: Application: BGA777N7 Single-Band UMTS LNA BGA777N7 Supporting LTE Band-41 (2496-2690 MHz) PCB Marking: BGA7xxL7 V1.0 3.1 Schematics and Bill-of-Materials Figure 7 Table 5 Schematics of the BGA777N7 Application Circuit 1 Bill-of-Materials of Application Circuit 1 Symbol Value Unit Size Manufacturer Comment C1 2.4 pF 0402 Various DC block & input matching C2 1.2 pF 0402 Various Output matching L1 4.1 nH 0402 Murata LQW series Input matching L2 4.1 nH 0402 Murata LQW series Input matching 0402 Murata LQW series Onput matching Infineon SiGe LNA L3 3.9 nH N1 BGA777N7 TSNP-7-1 Application Note AN370, Rev. 1.0 14 / 29 2014-03-27 BGA777N7 Single-Band UMTS LNA for LTE Band-41 (2496-2690 MHz) Application Circuit and Performance Overview Figure 8 Schematics of the BGA777N7 Application Circuit 2 Table 6 Bill-of-Materials of Application Circuit 2 Symbol Value Unit Size Manufacturer Comment C1 1 nF 0402 Various DC block & input matching C2 1.2 pF 0402 Various Output matching L1 2.5 nH 0402 Murata LQW series Input matching L2 4.1 nH 0402 Murata LQW series Input matching L3 3.9 nH 0402 Murata LQW series Onput matching N1 BGA777N7 TSNP-7-1 Infineon SiGe LNA 3.2 Comparison between Application Circuit 1 and Circuit 2 Table 7 Comparision Between Application circuit 1 and circuit 2 for Band-41 VCC = 2.8 V, TA = 25 °C Parameter Frequency Value Symbol Unit Circuit 1 Circuit 2 2593 2593 Freq MHz HG LG HG LG Gain G 16.6 -6.8 16.6 -7.3 dB Noise Figure NF 1.18 6.8 1.23 7.3 dB Input Return Loss RLin 15.2 12.1 13.2 7.2 dB Output Return Loss RLout 19.1 10.7 25.3 11.3 dB Output P1dB OP1dB 4.9 -8.8 4.7 -8.4 dBm Output IP3 OIP3 13.9 -1.6 16.8 -2 dBm Application Note AN370, Rev. 1.0 15 / 29 Comment/Test Condition Loss of SMA and line of 0.11 dB is substracted Power @ Input: -30 dBm f1=2593 MHz, f2=2594 MHz 2014-03-27 BGA777N7 Single-Band UMTS LNA for LTE Band-41 (2496-2690 MHz) Application Circuit and Performance Overview 3.3 Summary of Measurement Results of Application Circuit 1 Table 8 Electrical Characteristics of BGA777N7 at High Gain Mode for Band-41 VCC = 2.8 V, VEN = 2.8 V, VGS = 2.8 V, TA = 25 °C Parameter Symbol Value Unit DC Voltage Vcc 2.8 V DC Current Icc 4.4 mA Frequency Range Freq 2496 2593 2690 MHz Gain G 16.4 16.6 15.8 dB Noise Figure NF 1.18 1.18 1.20 dB Input Return Loss RLin 10.4 15.2 19.8 dB Output Return Loss RLout 10.7 19.1 10.8 dB Reverse Isolation IRev 34.9 34.1 34.1 dB Input P1dB IP1dB -9.1 -10.7 -12.4 dBm Output P1dB OP1dB 6.3 4.9 2.4 dBm Input IP3 IIP3 -2.7 dBm Output IP3 OIP3 13.9 dBm Stability k >1 -- Table 9 Comment/Test Condition Loss of SMA and line of 0.11 dB is substracted Power @ Input: -30 dBm f1=2593 MHz, f2=2594 MHz Measured up to 10 GHz Electrical Characteristics of BGA777N7 at Low Gain Mode for Band-41 VCC = 2.8 V, VEN = 2.8 V, VGS = 0 V, TA = 25 °C Parameter Symbol Value Unit DC Voltage Vcc 2.8 V DC Current Icc 0.5 mA Frequency Range Freq 2496 2593 2690 MHz Gain G -6.9 -6.8 -7.3 dB Noise Figure NF 6.9 6.8 7.3 dB Input Return Loss RLin 10.5 12.1 10.8 dB Output Return Loss RLout 12.2 10.7 7.6 dB Reverse Isolation IRev 6.9 6.8 7.3 dB Input P1dB IP1dB -1.1 -1.0 -1.4 dBm Output P1dB OP1dB -9.0 -8.8 -9.7 dBm Input IP3 IIP3 5.2 dBm Output IP3 OIP3 -1.6 dBm Stability k >1 -- Application Note AN370, Rev. 1.0 16 / 29 Comment/Test Condition Loss of SMA and line of 0.11 dB is substracted Power @ Input: -30 dBm f1=2593MHz, f2=2594 MHz Measured up to 10 GHz 2014-03-27 BGA777N7 Single-Band UMTS LNA for LTE Band-41 (2496-2690 MHz) Application Circuit and Performance Overview 3.4 Summary of Measurement Results of Application Circuit 2 Table 10 Electrical Characteristics of BGA777N7 at High Gain Mode for Band-41 VCC = 2.8 V, VEN = 2.8 V, VGS = 2.8 V, TA = 25 °C Parameter Symbol Value Unit Comment/Test Condition DC Voltage Vcc 2.8 2.8 2.8 DC Current Icc 4.4 4.4 4.4 Frequency Range Freq 2496 2593 2690 MHz Gain G 16.9 16.6 15.7 dB Noise Figure NF 1.17 1.23 1.31 dB Input Return Loss RLin 15.8 13.2 11.8 dB Output Return Loss RLout 12.5 25.3 11.2 dB Reverse Isolation IRev 34.3 34.0 34.4 dB Input P1dB IP1dB -9.5 -10.9 -12.5 dBm Output P1dB OP1dB 6.4 4.7 2.2 dBm Input IP3 IIP3 0.2 dBm Output IP3 OIP3 16.8 dBm Stability k >1 -- Table 11 Loss of SMA and line of 0.11 dB is substracted Power @ Input: -30 dBm f1=2593MHz, f2=2594 MHz Measured up to 10 GHz Electrical Characteristics of BGA777N7 at Low Gain Mode for Band-41 VCC = 2.8 V, VEN = 2.8 V, VGS = 0 V, TA = 25 °C Parameter Symbol Value Unit Comment/Test Condition DC Voltage Vcc 2.8 2.8 2.8 DC Current Icc 0.5 0.5 0.5 Frequency Range Freq 2496 2593 2690 MHz Gain G -6.8 -7.3 -8.4 dB Noise Figure NF 6.8 7.3 8.4 dB Input Return Loss RLin 9.5 7.2 5.3 dB Output Return Loss RLout 16.8 11.3 6.7 dB Reverse Isolation IRev 6.8 7.3 8.4 dB Input P1dB IP1dB -0.8 -0.1 -0.3 dBm Output P1dB OP1dB -8.6 -8.4 -9.7 dBm Input IP3 IIP3 5.3 dBm Output IP3 OIP3 -2 dBm Stability k >1 -- Application Note AN370, Rev. 1.0 17 / 29 Loss of SMA and line of 0.11 dB is substracted Power @ Input: -30 dBm f1=2593MHz, f2=2594 MHz Measured up to 10 GHz 2014-03-27 BGA777N7 Single-Band UMTS LNA for LTE Band-41 (2496-2690 MHz) Application Circuit and Performance Overview 3.5 BGA777N7 LNA for LTE Band-41 (2496-2690 MHz) for Circuit 1 This application note focuses on the Infineon’s Single-band UMTS LNA, BGA777N7 tuned for the LTE band-41. It presents the performance of BGA777N7 with 2.8V voltage for both high and low gain mode. This application circuit requires seven 0402 passive components. The components values are fine tuned for optimal noise figure, gain, input and output matching. In high gain mode, it has an in-band gain of 16.6 dB. The circuit achieves input return loss better than 10.4 dB, as well as the output return loss better than 10.7 dB. At room temperature the noise figure is 1.18 dB (SMA and PCB losses are subtracted). Furthermore, the circuit is measured unconditionally stable till 10 GHz. At Band-41, using two tones spacing of 1 MHz, the output third order intercept point, OIP3 reaches 13.9 16.9 dBm. Input P1dB of the BGA777N7 LNA is about –9 dBm at 2496 MHz. In low gain mode, it has an attenuation of 6.9 dB. The circuit achieves input return loss better than 10.5 dB, as well as the output return loss better than 8 dB. Moreover, the circuit is also unconditionally stable till 10 GHz. At Band-41, using two tones spacing of 1 MHz, the input third order intercept point, IIP3 reaches 8.3 dBm. Input P1dB of the BGA777N7 LNA is about -1.1 dBm at 2496 MHz. All the measurements are done with the standard evaluation board presented at the end of this application note. Application Note AN370, Rev. 1.0 18 / 29 2014-03-27 BGA777N7 Single-Band UMTS LNA for LTE Band-41 (2496-2690 MHz) Measurement Graphs for Circuit 1 4 Measurement Graphs for Circuit 1 Insertion Power Gain (Narrowband) 25 High Gain Low Gain 15 2496 MHz 16.42 dB 2593 MHz 16.56 dB 2690 MHz 15.79 dB 5 2593 MHz -6.783 dB 2496 MHz -6.899 dB 2690 MHz -7.304 dB -5 -15 2300 Figure 9 2400 2500 2600 2700 Frequency (MHz) 2800 2900 Insertion Power Gain (Narrowband) of the BGA777N7 for Band-41 Applications Insertion Power Gain (Wideband) 30 2496 MHz 16.42 dB 20 2593 MHz 16.56 dB High Gain 2690 MHz 15.79 dB Low Gain 10 2593 MHz -6.783 dB 0 2690 MHz -7.304 dB -10 -20 2496 MHz -6.899 dB -30 -40 0 Figure 10 2000 4000 Frequency (MHz) 6000 8000 Insertion Power Gain (Wideband) of the BGA777N7 for Band-41 Applications Application Note AN370, Rev. 1.0 19 / 29 2014-03-27 BGA777N7 Single-Band UMTS LNA for LTE Band-41 (2496-2690 MHz) Measurement Graphs for Circuit 1 Noise Figure (High Gain Mode) 1.3 1.25 1.2 2593 MHz 1.1777 2496 MHz 1.1653 2690 MHz 1.19 1.15 1.1 1.05 2450 Figure 11 2500 2550 2600 2650 Frequency (MHz) 2700 2750 Noise Figure of the BGA777N7 for Band-41 Applications (High Gain Mode) Input Return Loss 0 2496 MHz -10.52 dB -5 2593 MHz -12.05 dB 2690 MHz -10.82 dB -10 2496 MHz -10.44 dB -15 -20 -25 2593 MHz -15.16 dB High Gain 2690 MHz -19.82 dB Low Gain -30 2300 Figure 12 2400 2500 2600 2700 Frequency (MHz) 2800 2900 Input Matching of the BGA777N7 for Band-41 Applications Application Note AN370, Rev. 1.0 20 / 29 2014-03-27 BGA777N7 Single-Band UMTS LNA for LTE Band-41 (2496-2690 MHz) Measurement Graphs for Circuit 1 Swp Max 2900MHz 2. 0 0. 6 0.8 1.0 Input Matching Smith Chart 0 4. 0 10.0 5.0 4.0 2593 MHz 5.0 r 1.31507 x -0.257287 10.0 2.0 0.6 0.4 0.2 0.8 0.2 0 1.0 4 2690 MHz r 0.55813 x -0.0786556 3. 3.0 0. 2690 MHz r 1.22708 x 0.00798212 2496 MHz r 1.53414 x -0.569365 -10.0 .0 -2 .6 Swp Min 2300MHz -1.0 -0.8 -0 Low Gain Figure 13 .0 High Gain -3 .4 .0 -0 2496 MHz r 1.04731 x -0.637057 -4 2593 MHz r 0.755438 x -0.375669 0 2 -5. -0. Input Matching (Smith Chart) of the BGA777N7 for Band-41 Applications Output Return Loss 0 2496 MHz -10.67 dB -5 2593 MHz -10.73 dB 2690 MHz -7.621 dB -10 -15 2496 MHz -12.22 dB 2690 MHz -10.81 dB -20 2593 MHz -19.09 dB -25 High Gain Low Gain -30 2300 Figure 14 2400 2500 2600 2700 Frequency (MHz) 2800 2900 Output Matching of the BGA777N7 for Band-41 Applications Application Note AN370, Rev. 1.0 21 / 29 2014-03-27 BGA777N7 Single-Band UMTS LNA for LTE Band-41 (2496-2690 MHz) Measurement Graphs for Circuit 1 0.8 1.0 Output Matching Smith Chat Swp Max 2900MHz 2. 0 0. 6 High Gain Low Gain 0. 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 10.0 2690 MHz r 1.52348 x -1.00026 -0.8 -2 Swp Min 2300MHz -1.0 .6 -0 2593 MHz r 1.35205 x -0.612963 .0 .0 .4 -3 0.2 5.0 .0 Figure 15 0 -4 0 2496 MHz r 1.14933 x -0.520368 -0 4. 2690 MHz r 1.76082 x 0.242221 0 2 0 -5. 0.2 -0. 3. -10.0 4 2496 MHz r 0.559306 x -0.124905 2593 MHz r 0.882477 x 0.173287 Output Matching (Smith Chart) of the BGA777N7 for Band-41 Applications Reverse Isolation 0 -10 -20 2496 MHz -6.91 dB 2593 MHz -6.791 dB 2690 MHz -7.315 dB High Gain Low Gain -30 -40 2300 2496 MHz -34.94 dB 2593 MHz -34.05 dB 2500 2690 MHz -34.06 dB 2700 2900 Frequency (MHz) Figure 16 Reverse Isolation of the BGA777N7 for Band-41 Applications Application Note AN370, Rev. 1.0 22 / 29 2014-03-27 BGA777N7 Single-Band UMTS LNA for LTE Band-41 (2496-2690 MHz) Measurement Graphs for Circuit 1 Stability K Factor 10 9 8 7 6 5 4 3 2 High Gain 1 Low Gain 0 0 Figure 17 2000 4000 Frequency (MHz) 6000 8000 Stability K-factor of the BGA777N7 for Band-41 Applications Stability mu1 Factor 5 High Gain Low Gain 4 3 2 1 0 0 Figure 18 2000 4000 Frequency (MHz) 6000 8000 Stability Mu1-factor of the BGA777N7 for Band-41 Applications Application Note AN370, Rev. 1.0 23 / 29 2014-03-27 BGA777N7 Single-Band UMTS LNA for LTE Band-41 (2496-2690 MHz) Measurement Graphs for Circuit 1 Stability mu2 Factor 8 High Gain 7 Low Gain 6 5 4 3 2 1 0 0 Figure 19 2000 4000 Frequency (MHz) 6000 8000 Stability Mu2-factor of the BGA777N7 for Band-41 Applications Input 1dB Compression Point (High Gain) 18 -30 dBm 16.627 -10.7 dBm 15.627 16 -9.145 dBm 15.477 -30 dBm 16.477 -12.35 dBm 14.879 -29.98 dBm 15.879 14 2496 MHz 12 2593 MHz 2690 MHz 10 -30 Figure 20 -25 -20 -15 Power (dBm) -10 -5 0 Input 1dB Compression Point of the BGA777N7 for Band-41 Applications (High Gain Mode) Application Note AN370, Rev. 1.0 24 / 29 2014-03-27 BGA777N7 Single-Band UMTS LNA for LTE Band-41 (2496-2690 MHz) Measurement Graphs for Circuit 1 Input 1dB Compression Point (Low Gain) 0 2496 MHz 2593 MHz -2 2690 MHz -1.069 dBm -7.437 -4 -30 dBm -6.751 -6 -30 dBm -6.881 -1.031 dBm -7.778 -30 dBm -7.253 -8 -1.373 dBm -8.253 -10 -30 Figure 21 -25 -20 -15 Power (dBm) -10 -5 0 Input 1dB Compression Point of the BGA777N7 for Band-41 Applications (Low Gain Mode) Input 3rd order Intercept point (High Gain) 0 2593 MHz -13.25 -15 -35 2594 MHz -13.26 2595 MHz -67.3 2592 MHz -67.47 -55 -75 -95 -115 2591 Figure 22 2592 2593 2594 Frequency (MHz) 2595 2596 rd Input 3 Intercept Point of the BGA777N7 for Band-41 Applications (High Gain Mode) Application Note AN370, Rev. 1.0 25 / 29 2014-03-27 BGA777N7 Single-Band UMTS LNA for LTE Band-41 (2496-2690 MHz) Measurement Graphs for Circuit 1 Input 3rd order Intercept point (Low Gain) -30 2594 MHz -37.02 2593 MHz -37 -50 -70 -90 2592 MHz -113.9 2595 MHz -107.9 -110 -130 2591 Figure 23 2593 Frequency (MHz) 2595 2596 rd Input 3 Intercept Point of the BGA777N7 for Band-41 Applications (Low Gain Mode) Application Note AN370, Rev. 1.0 26 / 29 2014-03-27 BGA777N7 Single-Band UMTS LNA for LTE Band-41 (2496-2690 MHz) Evaluation Board and Layout Information 5 Evaluation Board and Layout Information In this application note, the following PCB is used: PCB Marking: BGA7xxL7 V1.0 PCB material: FR4 r of PCB material: 4.3 Figure 24 Picture of Evaluation Board (Overview) of BGA777N7 V1.0 Figure 25 Picture of Evaluation Board (Detailed View) of BGA777N7 V1.0 Vias FR4, 0.2mm Copper 35µm Figure 26 FR4, 0.8mm PCB Layer Stack Application Note AN370, Rev. 1.0 27 / 29 2014-03-27 BGA777N7 Single-Band UMTS LNA for LTE Band-41 (2496-2690 MHz) Authors 6 Authors Xufeng Du, Internship Student of Business Unit “RF and Protection Devices” Moakhkhrul Islam, RF Application Engineer of Business Unit “RF and Protection Devices” 7 Remark The graphs are generated with the simulation software AWR Microwave Office®. Application Note AN370, Rev. 1.0 28 / 29 2014-03-27 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG AN370