Ap pl ica t io n N o te, Re v. 1 . 2, F e br ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 5 3 I n f i n e on ’ s B F P 6 5 0 F R F T r a n s i s t or i n H i g h L i n e a r i t y 2 . 4 G H z L o w N o i s e A m p l i fi e r ( L N A ) Application R F & P r o t e c ti o n D e v i c e s Edition 2008-02-25 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2009. All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. 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Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Application Note No. 153 Application Note No. 153 Revision History: 2008-02-25, Rev. 1.2 Previous Version: 2007-02-14, Rev. 1.1 Page Subjects (major changes since last revision) All Small changes in figure descriptions Application Note 3 Rev. 1.2, 2008-02-25 Application Note No. 153 Infineon’s BFP650F RF Transistor in High Linearity 2.4 GHz Low Noise 1 Infineon’s BFP650F RF Transistor in High Linearity 2.4 GHz Low Noise Amplifier (LNA) Application Applications External LNA for enhancing range / sensitivity of 2.4 GHz systems where high linearity is required, e.g. for 802.11b,g access points, etc. Overview • • Infineon Silicon-Germanium BFP650F RF Transistor in TSFP-4 package is shown in a high-linearity 2.4 GHz LNA design. Amplifier draws 19.7 mA from +3.3 V supply. +5 V power supply can be used if bias resistor values are changed. Transistor package size is 1.2 x 1.2 x 0.55 mm including external leads (RoHS compliant package). Specification Targets • • • • • • • • Frequency range: 2400 – 2483.5 MHz DC Current: 20 mA max. VCC: 3.0 to 3.6 V Gain: 8 to 14 dB Noise Figure: 1.5 dB maximum. IP1dB: 0 dBm minimum IIP3: +12 dBm minimum Return Loss (In & Out): 10 dB minimum Summary of Results T = 25 °C, Network Analyzer Source Power ≈ -30 dBm, VCC = 3.3 V, VCE = 2.7 V, IC =19.7 mA. Table 1 Summary of Results Frequency dB [s11]² dB [s21]² dB [s12]² dB [s22]² NF * dB MHz IIP3 OIP3 IP1dB OP1dB dBm dBm dBm dBm 2400 10.0 12.7 18.6 13.6 1.4 --- --- --- --- 2441 10.3 12.6 18.4 12.5 1.3 +18.15 +30.7 -1.9 +9.7 2500 10.6 12.4 18.2 11.5 1.3 --- --- --- --- * Note that PCB loss is not extracted. If PCB loss were extracted, NF would be approximately 0.2 dB lower. Overall Impression Hits all targets with slight exception of Input P1dB, which is ~ 2 dB low. More current / higher VCC (and thus VCE) could increase P1dB. OP1dB of +9.7 dBm = 9.33 mW. “Collector Efficiency” at P1dB is 9.33 mW / (3.3 V x 19.7 mA) = 14.4 %. Application Note 4 Rev. 1.2, 2008-02-25 Application Note No. 153 Infineon’s BFP650F RF Transistor in High Linearity 2.4 GHz Low Noise Cross Sectional Diagram of PC Board (standard FR4 material) Figure 1 PCB - Cross Sectional Diagram Schematic Diagram Figure 2 Schematic Diagram Application Note 5 Rev. 1.2, 2008-02-25 Application Note No. 153 Infineon’s BFP650F RF Transistor in High Linearity 2.4 GHz Low Noise Details on TSFP-4 Package Dimensions in millimeters (mm). Figure 3 Package Outline Figure 4 Package Footprint Application Note 6 Rev. 1.2, 2008-02-25 Application Note No. 153 Infineon’s BFP650F RF Transistor in High Linearity 2.4 GHz Low Noise Noise Figure, Plot, 2200 to 2700 MHz. Center of Plot (x-axis) is 2450 MHz. Figure 5 Noise Figure Application Note 7 Rev. 1.2, 2008-02-25 Application Note No. 153 Infineon’s BFP650F RF Transistor in High Linearity 2.4 GHz Low Noise Noise Figure, Tabular Data From Rohde & Schwarz FSEK3 + FSEM30 + System PreAmp Table 2 Noise Figure Frequency Noise Figure 2200 MHz 1.33 dB 2220 MHz 1.34 dB 2240 MHz 1.35 dB 2260 MHz 1.31 dB 2280 MHz 1.34 dB 2300 MHz 1.32 dB 2320 MHz 1.33 dB 2340 MHz 1.32 dB 2360 MHz 1.33 dB 2380 MHz 1.31 dB 2400 MHz 1.37 dB 2420 MHz 1.37 dB 2440 MHz 1.35 dB 2460 MHz 1.34 dB 2480 MHz 1.31 dB 2500 MHz 1.31 dB 2520 MHz 1.32 dB 2540 MHz 1.35 dB 2560 MHz 1.33 dB 2580 MHz 1.34 dB 2600 MHz 1.33 dB 2620 MHz 1.32 dB 2640 MHz 1.34 dB 2660 MHz 1.32 dB 2680 MHz 1.36 dB 2700 MHz 1.35 dB Application Note 8 Rev. 1.2, 2008-02-25 Application Note No. 153 Infineon’s BFP650F RF Transistor in High Linearity 2.4 GHz Low Noise Scanned Image of PC Board Figure 6 Image of PC Board Application Note 9 Rev. 1.2, 2008-02-25 Application Note No. 153 Infineon’s BFP650F RF Transistor in High Linearity 2.4 GHz Low Noise Scanned Image of PC Board, Close-In Shot. Figure 7 Image of PC Board, Close-In Shot Application Note 10 Rev. 1.2, 2008-02-25 Application Note No. 153 Infineon’s BFP650F RF Transistor in High Linearity 2.4 GHz Low Noise Gain Compression at 2441 MHz Amplifier is checked for 1 dB compression point at VCC = 3.3 V, IC = 19.7 mA (with VCE = 2.7 V). An Agilent power meter was used to ensure accurate power levels are measured (as opposed to using Vector Network Analyzer in "Power Sweep" mode). Output P1dB ≅ +9.7 dBm; Input P1dB ≅ +9.7 dBm -(Gain - 1 dB) = +9.7 dBm - 11.6 dB = -1.9 dBm Table 3 Gain Compression at 2441 MHz POUT, dBm Gain, dB -5.0 12.6 -4.0 12.6 -3.0 12.6 -2.0 12.6 -1.0 12.6 0.0 12.8 +1.0 12.5 +2.0 12.5 +3.0 12.5 +4.0 12.5 +5.0 12.4 +6.0 12.4 +7.0 12.3 +8.0 12.2 +9.0 11.8 +10.0 11.4 +11.0 10.0 Figure 8 Plot of BFP650F Gain Compression, 2441 MHz, 3.3 V, 19.7 mA Application Note 11 Rev. 1.2, 2008-02-25 Application Note No. 153 Infineon’s BFP650F RF Transistor in High Linearity 2.4 GHz Low Noise Please Note - all plots are taken from Rohde and Schwarz ZVC Network Analyzer T = 25 °C, source power ≈ -30 dBm, VCC = 3.3 V, IC = 19.7 mA. Input Return Loss, Log Mag 5 MHz - 8 GHz Sweep Figure 9 Plot of Input Return Loss Application Note 12 Rev. 1.2, 2008-02-25 Application Note No. 153 Infineon’s BFP650F RF Transistor in High Linearity 2.4 GHz Low Noise Input Return Loss, Smith Chart Reference Plane = Input SMA Connector on PC Board 5 MHz - 8 GHz Sweep Figure 10 Smith Chart of Input Return Loss Application Note 13 Rev. 1.2, 2008-02-25 Application Note No. 153 Infineon’s BFP650F RF Transistor in High Linearity 2.4 GHz Low Noise Forward Gain 5 MHz - 8 GHz Sweep Figure 11 Plot of Forward Gain Application Note 14 Rev. 1.2, 2008-02-25 Application Note No. 153 Infineon’s BFP650F RF Transistor in High Linearity 2.4 GHz Low Noise Reverse Isolation 5 MHz - 8 GHz Figure 12 Plot of Reverse Isolation Application Note 15 Rev. 1.2, 2008-02-25 Application Note No. 153 Infineon’s BFP650F RF Transistor in High Linearity 2.4 GHz Low Noise Output Return Loss, Log Mag 5 MHz - 8 GHz Figure 13 Plot of Output Return Loss Application Note 16 Rev. 1.2, 2008-02-25 Application Note No. 153 Infineon’s BFP650F RF Transistor in High Linearity 2.4 GHz Low Noise Output Return Loss, Smith Chart Reference Plane = Output SMA Connector on PC Board 5 MHz - 8 GHz Sweep Figure 14 Smith Chart of Output Return Loss Application Note 17 Rev. 1.2, 2008-02-25 Application Note No. 153 Infineon’s BFP650F RF Transistor in High Linearity 2.4 GHz Low Noise Two-Tone Test, 2441 MHz Input Stimulus for Amplifier Two-Tone Test: f1 = 2441 MHz, f2 = 2442 MHz, -11 dBm each tone. Input IP3 = -11 + (58.2 / 2) = +18.1 dBm Output IP3 = +18.1 dBm + 12.6 dB gain = +30.7 dBm Figure 15 Plot of Tow-Tone Test Application Note 18 Rev. 1.2, 2008-02-25