Speed TEMPFET BTS244Z Speed TEMPFET® ® N-Channel Enhancement mode 1 1 Logic Level Input Analog driving possible 5 PG-TO263-5-2 5 PG-TO220-5-12 Fast switching up to 1 MHz Potential-free temperature sensor with thyristor characteristics Overtemperature protection •Green Product (RoHS Compliant) •AEC Qualified Avalanche rated Type VDS RDS(on) Package BTS244Z E3062A 55 V 13 m PG-TO263-5-2 PG-TO220-5-12 BTS244Z E3043 D Pin 3 and TAB G Pin 1 A Pin 2 Temperature Sensor K Pin 4 S Pin 5 Data Sheet Pin Symbol Function 1 G Gate 2 A Anode Temperature Sensor 3 D Drain 4 K Cathode Temperature Sensor 5 S Source 1 Rev.1.4, 2013-07-26 Speed TEMPFET BTS244Z Maximum Ratings Parameter Symbol Drain source voltage VDS V 55 Gate source voltage VGS 20 Nominal load current (ISO 10483) ID(ISO) Drain-gate voltage, RGS = 20 k DGR Value Unit V 55 A VGS = 4.5 V, VDS 0.5 V, TC = 85 °C 19 VGS = 10 V, VDS 0.5 V, TC = 85 °C 26 ID 35 Pulsed drain current ID puls 188 Avalanche energy, single pulse EAS 1.65 J Ptot 170 W -40 ...+175 °C Continuous drain current 1) TC = 100 °C, VGS = 4.5V ID = 19 A, RGS = 25 Power dissipation TC = 25 °C Operating temperature 2) Tj Peak temperature ( single event ) Tjpeak Storage temperature Tstg 200 -55 ... +150 DIN humidity category, DIN 40 040 E IEC climatic category; DIN IEC 68-1 40/150/56 1current limited by bond wire 2Note: Thermal trip temperature of temperature sensor is below 175°C Data Sheet 2 Rev.1.4, 2013-07-26 Speed TEMPFET BTS244Z Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics junction - case: RthJC - - 0.88 Thermal resistance @ min. footprint Rth(JA) - - 62 Thermal resistance @ 6 cm2 cooling area 1) Rth(JA) - 33 40 K/W Electrical Characteristics Parameter Symbol at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. 55 - - ID = 130 μA 1.2 1.6 2 ID = 250 μA - 1.65 - Static Characteristics Drain-source breakdown voltage V(BR)DSS V VGS = 0 V, ID = 0.25 mA VGS(th) Gate threshold voltage, VGS = VDS IDSS Zero gate voltage drain current μA VDS = 50 V, VGS = 0 V, Tj = -40 °C - - 0.1 VDS = 50 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 50 V, VGS = 0 V, Tj = 150 °C - - 100 IGSS Gate-source leakage current nA VGS = 20 V, VDS = 0 V, Tj = 25 °C - 10 100 VGS = 20 V, VDS = 0 V, Tj = 150 °C - 20 100 RDS(on) Drain-Source on-state resistance m VGS = 4.5 V, ID = 19 A - 16 18 VGS = 10 V, ID = 19 A - 11.5 13 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for drain connection. PCB mounted vertical without blown air. Data Sheet 3 Rev.1.4, 2013-07-26 Speed TEMPFET BTS244Z Electrical Characteristics Parameter Symbol at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. Dynamic Characteristics Forward transconductance gfs 25 - - S VDS>2*ID *RDS(on)max , ID = 35 A Input capacitance Ciss - 2130 2660 pF Coss - 600 750 Crss - 320 400 td(on) - 15 25 tr - 70 105 td(off) - 40 60 tf - 25 40 Qg(th) - 2.5 3.8 Qg(5) - 50 75 Qg(total) - 85 130 V(plateau) - 4.5 - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, VGS = 4.5 V, ID = 47 A, RG = 2.2 Rise time VDD = 30 V, VGS = 4.5 V, ID = 47 A, RG = 2.2 Turn-off delay time VDD = 30 V, VGS = 4.5 V, ID = 47 A, RG = 2.2 Fall time VDD = 30 V, VGS = 4.5 V, ID = 47 A, RG = 2.2 Gate Charge Characteristics Gate charge at threshold nC VDD = 40 V, ID = 0.1 A, VGS = 0 to 1 V Gate charge at 5.0 V VDD = 40 V, ID = 47 A, V GS = 0 to 5 V Gate charge total VDD = 40 V, ID = 47 A, V GS = 0 to 10 V Gate plateau voltage V VDD = 40 V, ID = 47 A Data Sheet 4 Rev.1.4, 2013-07-26 Speed TEMPFET BTS244Z Electrical Characteristics Symbol Parameter at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. IS 35 - - IFM 188 - - VSD - 1.25 1.8 V trr - 110 165 ns Qrr - 0.23 0.35 μC Reverse Diode Inverse diode continuous forward current A TC = 25 °C Inverse diode direct current,pulsed TC = 25 °C Inverse diode forward voltage VGS = 0 V, IF = 94 A Reverse recovery time VR = 30 V, IF =IS, diF/dt = 100 A/μs Reverse recovery charge VR = 30 V, IF =IS, diF/dt = 100 A/μs Sensor Characteristics For temperature sensing, i.e. temperature protection, please consider application note "Temperature sense concept - Speed TEMPFET”. For short circuit protection please consider application note "Short circuit behaviour of the Speed TEMPFET family”. All application notes are available at http://www.infineon.com/tempfet/ VAK(on) Forward voltage V IAK(on) = 5 mA, Tj = -40...+150 °C - 1.3 1.4 IAK(on) = 1.5 mA, Tj = 150 °C - - 0.9 Sensor override - - 10 - - 5 - - 600 tP = 100 μs, Tj = -40...+150 °C IAK(on) Forward current mA Tj = -40...+150 °C Sensor override tP = 100 μs, Tj = -40...+150 °C Data Sheet 5 Rev.1.4, 2013-07-26 Speed TEMPFET BTS244Z Electrical Characteristics Parameter Symbol at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. - - 4 μA 100 - - μs - - 150 Sensor Characteristics IAK(off) Temperature sensor leakage current Tj = 150 °C treset Min. reset pulse duration 1) Tj = -40...+150 °C, IAK(on) = 0.3 mA, VAK(Reset)<0.5V VAK Recovery time1)2) trecovery Tj = -40...+150 °C, IAK(on) = 0.3 mA Characteristics IAK(hold) Holding current, VAK(off) = 5V mA Tj = 25 °C 0.05 - 0.5 Tj = 150 °C 0.05 - 0.3 TTS(on) 150 160 170 °C toff 0.5 - 2.5 μs VAK(reset) 0.5 - - V Thermal trip temperature VTS = 5V Turn-off time (Pin G+A and K+S connected) VTS = 5V, ITS(on) = 2 mA Reset voltage Tj = -40...+150°C Sensor recovery behaviour: S ensor R E S E T V A K [V ] tre s e t 5 4 0 S ensor O N t re c o v e ry R eset OFF 1See diagram Sensor recovery behaviour 2Time after reset pulse until V AK reaches 4V again Data Sheet 6 Rev.1.4, 2013-07-26 Speed TEMPFET BTS244Z 1 Maximum allowable power dissipation 2 Drain current Ptot = f(TC) ID = f(TC ); VGS 180 4.5V 40 A 30 120 ID Ptot 140 25 100 20 80 15 60 10 40 5 20 0 -40 0 40 80 °C 120 0 0 180 20 40 60 80 100 120 140 °C TC 180 TC 3 Typ. transient thermal impedance 4 Transient thermal impedance ZthJA=f(tp ) @ 6 cm2 cooling area ZthJC = f (tp ) Parameter: D=tp /T parameter : D = tp /T 10 2 10 1 K/W K/W 10 0 D=0.5 10 1 D=0.5 Z thJC Z thJA 0.2 0.1 0.2 10 -1 0.05 0.1 0.05 10 0 0.02 0.02 10 -2 0.01 10 -1 0.01 Single pulse 10 -3 Single pulse 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 10 3 -8 -7 -6 10 10 10 10 tp Data Sheet -4 -5 -4 -3 -2 10 10 10 10 -1 0 10 10 1 s 10 3 tp 7 Rev.1.4, 2013-07-26 Speed TEMPFET BTS244Z 5 Safe operating area 6 Typ. output characteristic ID=f(VDS ); D=0.01; TC =25°C ID = f(VDS); Tj =25°C Parameter: VGS 180 10V A 7V 140 6V ID ID 120 100 5V 80 4.5V 60 4V 40 3.5V 20 3V 0 0 1 V 2 4 VDS 7 On-state resistance 8 On-state resistance RON = f(Tj ); ID=19A; VGS = 4.5V RON = f(Tj ); ID=19A; VGS = 10V 40 30 m m 30 RDS(on) RDS(on) max. typ. 25 20 max. 20 typ. 15 15 10 10 5 5 0 -50 -25 0 25 50 75 100 125 °C 0 -50 175 Tj Data Sheet -25 0 25 50 75 100 125 °C 175 Tj 8 Rev.1.4, 2013-07-26 Speed TEMPFET BTS244Z 9 Typ. transfer characteristics 10 Typ. input threshold voltage ID = f(VGS); VDS = 12V; Tj = 25°C VGS(th) = f(Tj); VDS =VGS Parameter: ID 100 2.4 A V 2.0 VGS(th) 80 ID 70 60 1.8 130mA 1.6 13mA 1.4 50 1.2 40 1.0 1.3mA 130μA 0.8 30 0.6 20 0.4 10 0.2 0 0 1 2 V 3 0.0 -50 5 -25 0 25 50 75 100 125 °C VGS 175 Tj 11 Typ. capacitances 12 Typ. forward charcteristics of C = f(VDS); VGS =0 V, f=1 MHz reverse diode IF = f(VSD ) tp = 80μs (spread); Parameter: Tj 10 1 10 2 A nF 150°C 10 1 25°C C IF Ciss 10 0 Coss 10 0 Crss 10 -1 0 4 8 12 16 20 24 28 32 V 10 -1 0.0 40 VDS Data Sheet 0.2 0.4 0.6 0.8 1.0 1.2 V 1.6 VSD 9 Rev.1.4, 2013-07-26 Speed TEMPFET BTS244Z 13 Typ. gate charge 14 Drain-source break down voltage VGS = f(QGate); ID puls = 47A V(BR)DSS = f(Tj ) BTS 244 Z 66 V V V(BR)DSS 16 VGS 12 0,2 VDS max 10 0,8 VDS max 62 60 8 58 6 56 4 54 2 52 0 0 Data Sheet 20 40 60 80 100 50 -40 nC 140 QGate 0 40 80 120 °C 180 Tj 10 Rev.1.4, 2013-07-26 Speed TEMPFET BTS244Z Package Outlines 1 Package Outlines 4.4 10 ±0.2 1.27 ±0.1 0...0.3 B 0.05 4.7 ±0.5 2.7 ±0.3 2.4 0.1 1.3 ±0.3 7.55 1) 1 ±0.3 9.25 ±0.2 (15) A 8.5 1) 0...0.15 5 x 0.8 ±0.1 0.5 ±0.1 4 x 1.7 0.25 M A B 8˚ MAX. 0.1 B 1) Typical Metal surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut. PG-TO263-5-2 10 ±0.2 A 9.9 ±0.2 B 1.27 ±0.1 2.8 ±0.2 C 0.05 2.4 13 ±0.5 0...0.3 4.4 11 ±0.5 12.95 1) 15.65 ±0.3 17 ±0.3 8.5 1) 3.7 -0.15 0.5 ±0.1 0...0.15 2.4 5 x 0.8 ±0.1 4 x 1.7 1) Figure 2 Data Sheet 9.25 ±0.2 Figure 1 GPT09062 0.25 M A B C Typical Metal surface min. X = 7.25, Y = 12.3 All metal surfaces tin plated, except area of cut. PG-TO220-5-12 11 Rev.1.4, 2013-07-26 Speed TEMPFET BTS244Z Package Outlines Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Data Sheet 12 Dimensions in mm Rev.1.4, 2013-07-26 Speed TEMPFET BTS244Z Revision History 2 Revision History Revision Date Changes 1.4 2013-07-26 page 1, 11: updated package name and package drawing: PG-TO220-5-62 to PG-TO263-5-2 (SMD) PG-TO220-5-43 to PG-TO220-5-12 (THD, straight leads); page 1, 11/12: removed package: PG-TO220-5-3 (THD, staggered leads) page 1: added sales names for the different packages; 1.3 2009-12-04 page 8: updated description figure 5 updated package drawing of PG-TO220-5-62 1.2 2009-07-31 removed 100ms and DC line in SOA diagram 1.1 2008-11-10 all pages: added new Infineon logo Initial version of RoHS-compliant derivate of the BTS244Z Page 1 and 12: added RoHS compliance statement and Green product feature Page 1, 11 and 12: Package changed to RoHS compliant version page 13: added Revision history page 14: update of disclaimer Data Sheet 13 Rev.1.4, 2013-07-26 Edition 2013-07-26 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. 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