Application Guide for Consumer Applications

Edition 2011-11-01
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
RF and Protection Devices
Application Guide for Consumer Communication
Infineon Technologies
A Leading Company in RF and Protection Devices
Infineon Technologies focuses on the three central challenges facing modern society: Energy Efficiency,
Mobility and Security and offers semiconductors and system solutions for industrial/consumer electronics,
automotive electronics, chip card and security applications.
Infineon’s products stand out for their reliability, their quality excellence and their innovative and leading-edge
technology in analog and mixed signal, RF and power, as well as embedded control.
With its technologies and design expertise, Infineon is the market leader in its focus segments. Infineon has
more than 30 years of experience in developing RF products for numerous applications and always leads in the
market with high performance, yet cost effective products. You can visit our website www.infineon.com to learn
more about the broad product portfolio of Infineon Technologies.
The Infineon business unit - RF and Protection Devices (RPD) - has evolved over the years from a supplier of
standard RF discrete components like transistors and diodes to a more advanced portfolio of state-of-the-art,
innovative and differentiated products including application specific MMICs, Silicon Microphones and ESD
protection components. Please visit our website www.infineon.com/rfandprotectiondevices to learn more about
Infineon’s latest RF and Protection products for your applications.
Infineon’s application guide consisting of four different brochures is an easy-to-use tool primarily meant for
engineers to guide them to the right device for their system, efficiently. This application guide is updated
frequently to include latest applications and trends. Each brochure focuses on a market segment that we
support:
1. Application Guide for Mobile Communication: www.infineon.com/rpd_appguide_mobile
2. Application Guide for Consumer Applications: www.infineon.com/rpd_appguide_consumer
3. Application Guide for Industrial Applications:
www.infineon.com/rpd_appguide_industrial
4. Application Guide for Protection:
www.infineon.com/rpd_appguide_protection
Our application experts worldwide are always ready to support you in designing your systems with our devices.
Please contact Infineon’s Regional Offices or one of Infineon Worldwide Distribution Partners in your area to get
all the support you might need.
Kind Regards
Dr. Heinrich Heiss
Dr. Chih-I Lin
Director Technical Marketing
& Application Engineering RPD
Regard
Group Leader RF Technical Marketing
& Application Engineering RPD
3
RF and Protection Devices
Application Guide for Consumer Communication
INDEX
Infi neo n T e chn olo gi e s ................................................................................................................................... 3
1
Infineon’s RF and Protection Devices for Consumer Applications .............................................. 6
2
Wi-Fi Wireless LAN (WLAN, IEEE802.11a/b/g/n/ac) and WiMAX (IEEE802.16e) .......................... 8
2.1
2.4 GHz Wi-Fi Wireless LAN (WLAN, IEEE802.11b/g/n) and WiMAX (IEEE802.16e) Front-End ...... 9
2.2
5 – 6 GHz Wi-Fi Wireless LAN (WLAN, IEEE802.11a/n/ac) and WiMAX (IEEE802.16e) Front-End 11
2.3
3.5 GHz WiMAX (IEEE802.16e) Front-End ....................................................................................... 13
2.4
Dual-Band (2.4 – 6.0 GHz) Wi-Fi Wireless LAN (WLAN, IEEE802.11a/b/g/n) Front-End ................. 15
3
Satellite Receivers - Low Noise Block (LNB) ................................................................................ 17
3.1
C-Band Twin LNB............................................................................................................................... 18
3.2
Ku-Band Twin LNB ............................................................................................................................. 19
4
TV Tuner Applications ..................................................................................................................... 21
4.1
Module Tuner for Analog / Cable / Terrestrial TV .............................................................................. 21
4.2
T-DMB/DAB in VHF Band III and L-Band .......................................................................................... 22
4.3
Si-Tuner System for Terrestrial and Cable Digital TV ........................................................................ 24
4.4
Tuner and GPS Combi-Application .................................................................................................... 25
4.5
Cable TV Reverse Path Amplifier ...................................................................................................... 27
5
Global Navigation Satellite System ................................................................................................ 28
5.1
Global Navigation Satellite System (GNSS) with Discrete RF Devices ............................................. 30
5.2
Global Navigation Satellite System (GNSS) with integrated Front-End Modules .............................. 32
6
Cordless Phones .............................................................................................................................. 34
6.1
1.9 GHz Cordless Phones .................................................................................................................. 34
6.2
2.4 GHz Cordless Phones .................................................................................................................. 36
6.3
5.8 GHz Cordless Phones .................................................................................................................. 38
7
Active Antenna for Portable Applications (Tuner, Cellular, GPS, SDARs…) ............................. 40
8
Cellular Modems for Data Communication ................................................................................... 41
9
Bluetooth (BT) Front-End for Bluetooth Class 1 ........................................................................... 42
10
Base Stations.................................................................................................................................... 44
11
RF Function Blocks with Discrete Devices ................................................................................... 46
11.1
Driver Amplifiers ................................................................................................................................. 46
11.2
Broadband Amplifier ........................................................................................................................... 47
11.3
Wide Bandwidth Single Pole Double Throw Switch ........................................................................... 48
11.4
Discrete Voltage-Controlled Oscillators ............................................................................................. 49
11.5
Voltage Tuned Filter ........................................................................................................................... 50
4
RF and Protection Devices
Application Guide for Consumer Communication
11.6
Single Schottky Diode Detector ......................................................................................................... 51
11.7
High Isolation Schottky Diode Pair for Power Detection .................................................................... 52
11.8
Wide Bandwidth PIN Diode Variable Attenuator ................................................................................ 53
11.9
Passive Mixer with Schottky diodes ................................................................................................... 54
11.10
Active Mixer with Bipolar Transistors ................................................................................................. 55
12
Interface Protection ......................................................................................................................... 56
12.1
Interface Protection with Discrete ESD TVS Diodes .......................................................................... 57
12.2
Reverse Polarity Protection (RPP) Circuit ......................................................................................... 58
12.3
Reverse Polarity Protection for USB Charger .................................................................................... 59
12.4
Rectifier Circuit with Schottky Diodes ................................................................................................ 60
12.5
Clipping and Clamping ....................................................................................................................... 61
Abbreviations ....................................................................................................................................................... 62
Alphanumerical List of Symbols ........................................................................................................................ 63
Package Information ........................................................................................................................................... 64
Support Material .................................................................................................................................................. 65
5
RF and Protection Devices
Application Guide for Consumer Applications
1
Infineon’s RF and Protection Devices for Consumer Applications
A generic block diagram of a RF front-end is shown below. The exact circuit however varies from application to
application. Let us try to understand this front-end system. The whole system can be divided into transmit
section and receive section which are connected with an antenna. At the antenna, an ESD protection diode is
essential as the antenna is exposed to external world and the most susceptible to ESD strikes. Placing the
protection diode close to the antenna protects the entire circuit. The antenna is connected to a switch to toggle
between transmit and receive functionalities.
1st LNA
BPF
2nd LNA
Mixer
IF
RF
BPF
Buffer Amplifier
SPDT
Switch
ESD
Diode
Oscillator
Power Detector
Buffer Amplifier
IF
PA
Buffer Harmonic Mixer
Filter
Amplifier
The filter behind the antenna in the Rx chain allows only the frequency of interest to pass through to the rest of
the circuit. The low noise amplifier helps reducing the overall noise figure of the system thereby boosting receive
sensitivity. A 2
nd
LNA is also required in some applications requiring higher gain. Mixer helps to down convert
the received frequency to the IF band, which is then used to process the received signal in the RF transceiver.
On the Tx side, the signal from the transceiver is fed to the mixer to up-convert, then to a band-pass filter to
suppress the unwanted non-linear products. The buffer amplifier amplifies the signal to a certain level, after
which the power amplifier boosts it to suitable power level for transmission. The power amplifier operating in the
non-linear mode generates a lot of spurious signals which are filtered out using a high-Q band-pass filter to fulfill
requirements on EMI.
All these circuit elements have different figures of merit based on which the right device can be chosen.
However with any existing technology and design methodology there are numerous possibilities to trade
different parameters of the component. With its eminent application know how, Infineon offers various solutions
for the same application suiting requirements of different system designers / customers.
6
RF and Protection Devices
Application Guide for Consumer Applications
In the sections to follow, various consumer applications are described using block diagrams, text and
recommended devices by Infineon.
All applications are depicted with simple block diagrams to show the various building blocks, followed by a short
description. Infineon recommended parts for each application are tabulated together with the most important
performance characteristics. More detailed information on each product including datasheet, application
notes, new Spice model and S-parameter files, products and application brochures, sample kits etc. can
be found on Infineon’s website www.infineon.com/rfandprotectiondevices by clicking on the specific product
name.
7
RF and Protection Devices
Application Guide for Consumer Applications
2
Wi-Fi Wireless LAN (WLAN, IEEE802.11a/b/g/n/ac) and WiMAX
(IEEE802.16e)
The Wi-Fi function is one of the most important connectivity functions in notebooks, smart phones and tablet
PCs. Wi-Fi according to IEEE802.11b/g/n at 2.4 GHz is widely implemented over years. Due to the too cloudy
WLAN network at 2.4 GHz, the Wi-Fi applications at 5 to 6 GHz according to IEEE802.11a are gaining focus.
Not only using Wi-Fi for the high data rate access to the internet, but also different applications like home
entertainment with wireless high-quality multimedia signal transmission such as Wireless HDMI in TV-sets,
DVD-player,... and [email protected] such as home networking notebooks, mass data storages and printers,
implement 5 to 6 GHz Wi-Fi features into their system to offer high-speed wireless connection.
WiMAX (IEEE802.16e) at 2.3 to 2.7 GHz, 3.3 to 3.7 GHz and 5.8 GHz plays an important role in certain areas
for fast setup of high data rate last mile wireless communication infrastructures where no 3G networks are
available in emerging markets or countryside. WiMAX is designed for high data rate wireless communication up
to 70 Mbps which is suitable for fixed point-to-point (P2P) communication and also for portable or mobile
connections.
For these kinds of high-speed, high data rate wireless communication standards, it is essential to ensure the
quality of the link path. Major performance criteria of these equipment’s have to be fulfilled: sensitivity, strong
signal capability and interference immunity with proper link budget.
Infineon offers a wide product portfolio for both applications: Wi-Fi and WiMAX. It includes transistor & MMIC
low noise amplifiers, power detection diodes and pin diode switches.
In addition, Infineon also offers ESD protection diodes. The ESD protection diodes ESD0P2RF and ESP0P1RF
series have a capacitance value of only 0.2 pF or 0.1 pF and can protect up to 8 kV contact discharge according
to IEC 61000-4-2 standard.
8
RF and Protection Devices
Application Guide for Consumer Applications
2.1
2.4 GHz Wi-Fi Wireless LAN (WLAN, IEEE802.11b/g/n) and WiMAX
(IEEE802.16e) Front-End
WLAN: 2.4 – 2.5 GHz
WiMAX: 2.3 – 2.7 GHz
LNA
BPF
SPDT
Switch
WLAN/
WiMAX
Transceiver IC
Power Detector
ESD
Diode
BPF
PA
RF MMIC LNAs
Product
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BGA628L7
TR152
17.7
1.4
-18
-10
2.8
5.2
TSLP-7-8
BGA622
AN069
12.6
1.3
-15
-4
2.8
5.4
SOT343
BGA777L71)
TR1006
16.5/-72)
1.2/72)
-6/02)
-2/+62)
2.8
4.1/0.62)
TSLP-7-1
Notes:
1) LNA with two gain modes (high-gain/low-gain);
2) Values in high-gain (HG) / low-gain (LG) mode;
3) Please visit our website http://www.infineon.com/rfmmics for alternative devices.
RF Transistor LNAs
Product
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BFP740ESD
AN217
17.6
0.78
-7
-4
3.3
13.1
SOT343
BFP740FESD
AN171
17.4
0.8
-13
-3
3.6
14.7
TSFP-4
BFP640ESD
AN218
16.5
0.83
-12
+9
3.0
7.3
SOT343
BFP640FESD
AN129
15.5
0.9
-11
0
3.0
6.3
TSFP-4
Note:
Please visit our website http://www.infineon.com/rftransistors for alternative devices.
RF PIN Diode Switches
Product1)
Application
Note
rF2)
[Ω]
@IF
[mA]
rF2)
[Ω]
@IF
[mA]
CT3)
[pF]
@VR
[V]
τL4)
[ns]
Package
BAR63-02L
BAR63-02V
BAR63-03W
AN049
2.0
1
1.0
10
0.21
5
75
TSLP-2-1
SC79
SOD323
BAR90-02LS
AN197
1.3
3.0
0.8
10.0
0.25
1.0
750
TSSLP-2-1
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 100 MHz;
3) at 1 MHz;
4) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA;
5) Please visit our website http://www.infineon.com/pindiodes for alternative devices.
9
RF and Protection Devices
Application Guide for Consumer Applications
RF Schottky Diodes for Power Detector
Product1)
BAT62-02L
BAT62-02LA4
BAT62-07L4
D
BAT15-02LRH
Application
Note
CT2)
[pF]
@VR
[V]
VF
[mV]
@IF
[mA]
VF
[mV]
@IF
[mA]
IR
[μA]
@VR
[V]
Package
AN185
0.35
0
580
2
-
-
< 10
40
TSLP-2-1
TSSLP-2-1
AN185
0.35
0
580
2
-
-
< 10
40
TSLP-4-4
on request
0.26
0
230
1
320
10
<5
4
TSLP-2-7
BAT15-07LRH
D
on request
0.26
0
230
1
320
10
<5
4
TSLP-4-7
BAT15-098LRH
Q
on request
0.26
0
230
1
320
10
<5
4
TSLP-4-7
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices.
TVS ESD Diodes
Product
Application
Note
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD0P2RF-02LS
ESD0P2RF-02LRH
AN178
±5.3
±20
±29@±16
±38@±30
1
-
-
0.2
1
TSSLP-2-1
TSLP-2-17
ESD0P1RF-02LS
ESD0P1RF-02LRH
on request
±15
±10
±36@±8
±48@±16
1.5
-
-
0.1
1
TSSLP-2-1
TSLP-2-17
Notes:
1) Electrostatic discharge as per IEC 61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100 ns pulse length);
4) Maximum peak pulse current according to IEC 61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC 61000-4-5 (8/20 μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our website http://www.infineon.com/tvsdiodes for alternative devices.
10
RF and Protection Devices
Application Guide for Consumer Applications
5 – 6 GHz Wi-Fi Wireless LAN (WLAN, IEEE802.11a/n/ac) and WiMAX
(IEEE802.16e) Front-End
2.2
WLAN/WiMAX:
4.9 – 5.9 GHz
LNA
BPF
WLAN/
WiMAX
Transceiver IC
SPDT
Switch
Power Detector
BPF
PA
ESD
Diode
RF MMIC LNAs
Product
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BGA758L7
AN188
AN228
12.5
1.3
-3
+8
3.3
7.0
TSLP-7-8
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
Note:
Please visit our website http://www.infineon.com/rfmmics for alternative devices.
RF Transistor LNAs
Application
Note
Product
Gain
[dB]
NF
[dB]
BFP840ESD
BFP840FESD
BFR840L3RH
SOT343
TSFP-4
TSLP-3-9
on request
BFP740ESD
AN219
15.5
1.3
-6
+7
3.0
14.7
BFP740FESD
AN220
17.1
1.4
-9
+1
3.0
14.8
TSFP-4
BFR740L3RH
AN115
10.0
1.3
-5
+7
3.0
10.0
TSLP-3-9
BFP720ESD
TR162
15.2
0.9
-8
+5
3.0
10.3
SOT343
BFP720FESD
TR1063
18.6
1.6
-8
+2
3.0
12.2
TSFP-4
Note:
SOT343
Please visit our website http://www.infineon.com/rftransistors for alternative devices.
RF Schottky Diodes for Power Detector
Product1)
BAT62-02L
BAT62-02LA4
BAT62-07L4
D
BAT15-02LRH
Application
Note
CT2)
[pF]
@VR
[V]
VF
[mV]
@IF
[mA]
VF
[mV]
@IF
[mA]
IR
[μA]
@VR
[V]
Package
on request
0.35
0
580
2
-
-
< 10
40
TSLP-2-1
TSSLP-2-1
on request
0.35
0
580
2
-
-
< 10
40
TSLP-4-4
on request
0.26
0
230
1
320
10
<5
4
TSLP-2-7
BAT15-07LRH
D
on request
0.26
0
230
1
320
10
<5
4
TSLP-4-7
BAT15-098LRH
Q
on request
0.26
0
230
1
320
10
<5
4
TSLP-4-7
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices.
11
RF and Protection Devices
Application Guide for Consumer Applications
RF PIN Diode Switches
Product1)
Application
Note
rF2)
[Ω]
@IF
[mA]
rF2)
[Ω]
@IF
[mA]
CT3)
[pF]
@VR
[V]
τL4)
[ns]
Package
BAR90-02LS
on request
1.3
3.0
0.8
10.0
0.25
1.0
750
TSSLP-2-1
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 100 MHz;
3) at 1 MHz;
4) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA;
5) Please visit our website http://www.infineon.com/pindiodes for alternative devices.
TVS ESD Diodes
Product
Application
Note
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD0P2RF-02LS
ESD0P2RF-02LRH
AN178
±5.3
±20
±29@±16
±38@±30
1
-
-
0.2
1
TSSLP-2-1
TSLP-2-17
ESD0P1RF-02LS
ESD0P1RF-02LRH
on request
±15
±10
±36@±8
±48@±16
1.5
-
-
0.1
1
TSSLP-2-1
TSLP-2-17
Notes:
1) Electrostatic discharge as per IEC 61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100 ns pulse length);
4) Maximum peak pulse current according to IEC 61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC 61000-4-5 (8/20 μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our website http://www.infineon.com/tvsdiodes for alternative devices.
12
RF and Protection Devices
Application Guide for Consumer Applications
2.3
3.5 GHz WiMAX (IEEE802.16e) Front-End
WiMAX: 3.3 – 3.7 GHz
LNA
BPF
Balun
WiMAX
SPDT
Switch
Single/Dual Band
Power Detector
Transceiver IC
ESD
Diode
PA
BPF
Balun
RF MMIC LNAs
Product
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BGB707L7ESD
TR171
14.3
1.3
-8
-5
2.8
5.4
TSLP-7-1
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
Note:
Please visit our website http://www.infineon.com/rfmmics for alternative devices.
RF Transistor LNAs
Application
Note
Product
Gain
[dB]
NF
[dB]
BFP842ESD
BFP842FESD
BFR842L3RH
on request
BFP740ESD
BFP740FESD
BFR740L3RH
Note:
TR104
15.4
0.8
-10
+3
3.3
15.0
SOT343
TSFP-4
TSLP-3-9
SOT343
TSFP-4
TSLP-3-9
Please visit our website http://www.infineon.com/rftransistors for alternative devices.
RF PIN Diode Switches
Product1)
Application
Note
rF2)
[Ω]
BAR63-02L
TR132
BAR90-02LS
TR146
Notes:
@IF
[mA]
rF2)
[Ω]
@IF
[mA]
CT3)
[pF]
2.0
1
1.3
3.0
1.0
10
0.21
5
75
TSLP-2-1
0.8
10.0
0.25
1.0
750
TSSLP-2-1
@VR
[V]
τL4)
[ns]
Package
1) D=Dual; T=Triple; Q=Quadruple;
2) at 100 MHz;
3) at 1 MHz;
4) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA;
5) Please visit our website http://www.infineon.com/pindiodes for alternative devices.
RF Schottky Diodes for Power Detector
Product1)
BAT62-02L
BAT62-02LA4
BAT62-07L4
D
BAT15-02LRH
BAT15-07LRH
BAT15-098LRH
D
Q
Notes:
Application
Note
CT2)
[pF]
@VR
[V]
VF
[mV]
@IF
[mA]
VF
[mV]
@IF
[mA]
IR
[μA]
@VR
[V]
Package
on request
0.35
0
580
2
-
-
< 10
40
TSLP-2-1
TSSLP-2-1
TSLP-4-4
on request
0.26
0
230
1
320
10
<5
4
TSLP-2-7
TSLP-4-7
TSLP-4-7
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices.
13
RF and Protection Devices
Application Guide for Consumer Applications
TVS ESD Diodes
Product
Application
Note
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD0P2RF-02LS
ESD0P2RF-02LRH
AN178
±5.3
±20
±29@±16
±38@±30
1
-
-
0.2
1
TSSLP-2-1
TSLP-2-17
ESD0P1RF-02LS
ESD0P1RF-02LRH
on request
±15
±10
±36@±8
±48@±16
1.5
-
-
0.1
1
TSSLP-2-1
TSLP-2-17
Notes:
1) Electrostatic discharge as per IEC 61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100 ns pulse length);
4) Maximum peak pulse current according to IEC 61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC 61000-4-5 (8/20 μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our website http://www.infineon.com/tvsdiodes for alternative devices.
14
RF and Protection Devices
Application Guide for Consumer Applications
Dual-Band (2.4 – 6.0 GHz) Wi-Fi Wireless LAN (WLAN, IEEE802.11a/b/g/n)
Front-End
2.4
2.4 GHz LNA
Rx Diplexer
Dual-Band WLAN:
2.4 – 6 GHz
Rxg
Rxa
SPDT
Switch
5 GHz LNA
Txg
Transceiver
IC
2.4 GHz PA
ESD
Diode
Tx Diplexer
Txa
Power
Detector 5 GHz PA
Dual Band (2.4 GHz & 5.5 GHz) RF Transistor LNAs
Application
Note
Product
Gain1)
[dB]
NF1)
[dB]
IP-1dB1)
[dBm]
IIP31)
[dBm]
Supply
[V]
Current
[mA]
Package
BFP840ESD
BFP840FESD
BFR840L3RH
on request
SOT343
TSFP-4
TSLP-3-9
BFP842ESD
BFP842FESD
BFR842L3RH
on request
SOT343
TSFP-4
TSLP-3-9
BFP740ESD
BFP740FESD
AN187
17.5/13.5
1.3/1.3
-16/-8
-8/+4
2.8
12.0
SOT343
TSFP-4
BFR740L3RH
AN115
15.7/10.0
1.1/1.3
-11/-5
0/+7
3.0
10.0
TSLP-3-9
BFP720ESD
BFP720FESD
AN189
14.0/12.0
1.2/1.4
-15/-5
-9/+6
2.8
13.0
SOT343
TSFP-4
Notes:
1) values at 2.4 GHz/ 5.5 GHz;
2) Please visit our website http://www.infineon.com/rftransistors for alternative devices.
RF Schottky Diodes for Power Detector
Product1)
BAT62-02L
BAT62-02LA4
BAT62-07L4
D
BAT15-02LRH
Application
Note
CT2)
[pF]
@VR
[V]
VF
[mV]
@IF
[mA]
VF
[mV]
@IF
[mA]
IR
[μA]
@VR
[V]
Package
on request
0.35
0
580
2
-
-
< 10
40
TSLP-2-1
TSSLP-2-1
on request
0.35
0
580
2
-
-
< 10
40
TSLP-4-4
on request
0.26
0
230
1
320
10
<5
4
TSLP-2-7
BAT15-07LRH
D
on request
0.26
0
230
1
320
10
<5
4
TSLP-4-7
BAT15-098LRH
Q
on request
0.26
0
230
1
320
10
<5
4
TSLP-4-7
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices.
15
RF and Protection Devices
Application Guide for Consumer Applications
RF PIN Diode Switches
Product1)
Application
Note
rF2)
[Ω]
@IF
[mA]
rF2)
[Ω]
@IF
[mA]
CT3)
[pF]
@VR
[V]
τL4)
[ns]
Package
BAR90-02LS
TR146
1.3
3.0
0.8
10.0
0.25
1.0
750
TSSLP-2-1
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 100 MHz;
3) at 1 MHz;
4) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA;
5) Please visit our website http://www.infineon.com/pindiodes for alternative devices.
TVS ESD Diodes
Product
Application
Note
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD0P2RF-02LS
ESD0P2RF-02LRH
AN178
±5.3
±20
±29@±16
±38@±30
1
-
-
0.2
1
TSSLP-2-1
TSLP-2-17
ESD0P1RF-02LS
ESD0P1RF-02LRH
on request
±15
±10
±36@±8
±48@±16
1.5
-
-
0.1
1
TSSLP-2-1
TSLP-2-17
Notes:
1) Electrostatic discharge as per IEC 61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100 ns pulse length);
4) Maximum peak pulse current according to IEC 61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC 61000-4-5 (8/20 μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our website http://www.infineon.com/tvsdiodes for alternative devices.
16
RF and Protection Devices
Application Guide for Consumer Applications
3
Satellite Receivers - Low Noise Block (LNB)
LNB is a part of satellite TV antenna. It is fixed at the feed point of the parabolic dish antenna. It collects signal
from the waveguide attached to the feed point. The signal received from the satellite is at very high frequency
e.g. C-band or Ku-Band and very low signal strength. The purpose of the LNB is to amplify and down-convert
this signal to an IF signal to be able to process at the receiver. The amplification is realized using multiple low
noise amplifier (LNA) stages. The most important figure of merit of a LNB is its noise figure and this is primarily
determinated by the first stage LNA, which is normally a HEMT device with extremely low noise figures at these
high frequencies. For the second or third LNA stage, SiGe RF transistor is an ideal device. The significantly
filtered and amplified signal is then fed to mixer to generates the IF signal. It moves after filtering and amplifying
into the satellite set-top box receiver for further processing. The LNB is required to amplify the received signal
by about 50 to 60 dB for a good quality TV reception accompanied by ~1 dB noise figure.
There are two main frequency bands used for satellite TV broadcasting: C-Band at 3.4 to 4.2 GHz range and
Ku-Band at 10.7 to 12.75 GHz range. Based on the frequency of operation, the local oscillators (LO) of the
mixer is determined to have the same IF band signal. The satellite signal uses vertical and horizontal linear
polarization and therefore there are two receive paths with identical characteristics.
Infineon offers Si-based solutions for LNB such as the second stage LNA with SiGe: C RF transistors with low
noise figure and high gain, SiGe transistors or Schottky diode mixers, PIN diode switch matrix and IF LNA
stages. Infineon recommended devices are tabulated in the next pages.
17
RF and Protection Devices
Application Guide for Consumer Applications
3.1
C-Band Twin LNB
H
1st LNA
BPF
2nd LNA
3.4 – 4.2 GHz
IF Amplifiers
BPF
V
IF
950 – 2150 MHz
Output
Self-oscillating Mixer
1st LNA
BPF
RF Transistor LNAs
Application
Note
Product
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
BFP840ESD
BFP740ESD
BF7522)
Notes:
IIP3
[dBm]
Supply
[V]
Current
[mA]
on request
2)
SOT343
on request
AN224
12.7
1.6
Package
SOT343
-12
-1
5.0
4.8
SOT343
1) as 1st stage LNA;
2) as 2nd stage LNA;
3) Please visit our website http://www.infineon.com/rftransistors for alternative devices.
RF Transistor IF Amplifiers
Product
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BFP420
BFP420F
AN146
15
2.3
-4
8
5.0
27
SOT343
TSFP-4
BFP410
Note:
on request
SOT343
Please visit our website http://www.infineon.com/rftransistors for alternative devices.
RF Transistor Self Oscillating Mixers
Notes:
Product
Application
Note
Technology
fT1)
[GHz]
Af2)
[-]
Kf3)
[-]
fC4)
[kHz]
Package
BFP410
on request
Si
BFR360F
on request
Si
25
2.1
1.7E-10
131
SOT343
14
1.75
1.0E-11
-
TSFP-3
1) Transit Frequency;
2) Af and Kf are spice model parameters for 1/f noise;
3) Corner frequency of 1/f noise to white noise floor, measured at 10 mA;
4) Please visit our website http://www.infineon.com/rftransistors for alternative devices.
18
RF and Protection Devices
Application Guide for Consumer Applications
3.2
Ku-Band Twin LNB
H
1st LNA 2nd LNA 3rd LNA
BPF
Mixer
IF Amplifiers
BPF
Output 1
Switch
Matrix
10.7 – 12.75 GHz
VCO
IF
950 – 2150 MHz
V
Output 2
Application 1: Twin LNB block diagram
H
1st LNA 2nd LNA
3rd LNA BPF
BSF IF Amplifiers
Mixer
Output 1
VCO
Switch
Matrix
IF
950 – 2150 MHz
10.7 – 12.75 GHz
V
Output 2
Application 2: Quad LNB block diagram
nd
RF Transistor LNAs (2
rd
/ 3 stage)
Application
Note
Product
Gain
[dB]
NF
[dB]
BFP840ESD1)
OP-1dB
[dBm]
OIP3
[dBm]
Supply
[V]
Current
[mA]
on request
SOT343
on request
SOT343
TSFP-4
2)
BFP720ESD
BFP720FESD2)
BF8862)
Notes:
AN225
11.9
Package
1.9
+6
1) as 2nd stage LNA;
2) as 3rd stage LNA;
3) Please visit our website http://www.infineon.com/rftransistors for alternative devices.
19
+17
5.0
9.2
SOT343
RF and Protection Devices
Application Guide for Consumer Applications
RF Transistor IF Amplifiers
Product
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BFP640ESD
TR1059
16
1.2
-16
-4
3.3
8.3
SOT343
BFP420
BFP420F
AN146
15
2.3
-4
8
5.0
27
SOT343
TSFP-4
BFP410
Note:
on request
Please visit our website http://www.infineon.com/rftransistors for alternative devices.
RF Transistor Oscillators
Notes:
Product
Application
Note
Technology
fT1)
[GHz]
Af2)
[-]
Kf3)
[-]
fC4)
[kHz]
Package
BFP410
AN235
Si
25
2.1
1.7E-10
131
SOT343
BFP411
on request
Si
14
-
-
-
SOT343
1) Transit Frequency;
2) Af and Kf are spice model parameters for 1/f noise;
3) Corner frequency of 1/f noise to white noise floor, measured at 10 mA;
4) Please visit our website http://www.infineon.com/rftransistors for alternative devices.
RF Transistor Mixers
Notes:
Product
Application
Note
Technology
fT1)
[GHz]
Af2)
[-]
Kf3)
[-]
fC4)
[kHz]
Package
BFP740
BFP740F
on request
SiGe: C
42
1.8
4.0E-11
-
SOT343
TSFP-4
BFP720
BFP720F
on request
SiGe: C
45
1.45
3.5E-12
211
SOT343
TSFP-4
1) Transit Frequency;
2) Af and Kf are spice model parameters for 1/f noise;
3) Corner frequency of 1/f noise to white noise floor, measured at 10 mA;
4) Please visit our website http://www.infineon.com/rftransistors for alternative devices.
RF Schottky Diode Mixers
Application
Note
Product1)
BAT15
Notes:
AN198
CT2)
[pF]
0.26
@VR
[V]
0
VF
[mV]
@IF
[mA]
230
VF
[mV]
1
@IF
[mA]
320
IR
[μA]
10
<5
@VR
[V]
Package
4
TSLP-2-7
TSLP-4-7
SOD323
SOT143
SOT323
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices.
RF PIN Diode Switches Matrix
Product1)
BAR67-04
Notes:
D
Application
Note
rF2)
[Ω]
@IF
[mA]
rF2)
[Ω]
@IF
[mA]
CT
[pF]
@VR
[V]
τL4)
[ns]
Package
-
2.1
1
1
10
0.35
5
700
SOT23
1) D=Dual; T=Triple; Q=Quadruple;
2) at 100 MHz;
3) at 1 MHz;
4) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA;
5) Please visit our website http://www.infineon.com/pindiodes for alternative devices.
20
RF and Protection Devices
Application Guide for Consumer Applications
4
TV Tuner Applications
4.1
Module Tuner for Analog / Cable / Terrestrial TV
VHF I: 47 – 160 MHz
Tank
Circuit
RF Input
47 – 860 MHz
VHF II/III: 160 – 470MHz
Mixer
Oscillator
PLL
IC
Tank
Circuit
UHF: 470 – 860MHz
Tank
Circuit
Tuner Filter
MOSFET
Tuner Filter
RF MOSFET LNAs
Note:
Product
Application
Note
ID,max
[mA]
Ptot,max
[mW]
gfs
[mS]
Gp
[dB]
NF
[dB]
Cglss
[pF]
Cdss
[pF]
Package
BF2030W
-
40
200
31
23
1.5
2.4
1.3
SOT343
BF5020W
-
25
200
33
24
1.2
2.2
1.3
SOT343
BG5120K
-
20
200
30
23
1.1
2.2
1.4
SOT343
CRatio
IR
[nA]
@VR
[V]
Package
Please visit our website http://www.infineon.com/rfmosfets for alternative devices.
RF Varactor Diodes for Tunable Filters and Tank Circuits
Notes:
Product1)
Application
Note
CT2)
[pF]
@VR
[V]
CT2)
[pF]
@VR
[V]
BB555
-
18.7
1
2.1
28
8.9
< 10
30
SCD80
BB659
-
38.3
1
2.6
28
14.7
< 10
30
SCD80
BB689
-
56.5
1
2.7
28
2.9
< 10
30
SCD80
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Please visit our website http://www.infineon.com/varactordiodes for alternative devices.
21
RF and Protection Devices
Application Guide for Consumer Applications
4.2
T-DMB/DAB in VHF Band III and L-Band
VHF III Tuner Filter MOSFET Tuner Filter
170 – 240 MHz
ANT
LNA
Diplexer
Mixer
Oscillator
PLL
Tuner Filter MOSFET Tuner Filter
ESD
Diode
e.g. TUA6045
L - Band
Tank
Circuit
RF MMIC LNAs
Product
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BGA728L71)
AN167
15.0
1.4
-9/+42)
-7/+222)
2.8
5.5/0.52)
TSLP-7-1
Notes:
1) LNA with two gain modes (high-gain/low-gain);
2) Values in high-gain (HG) / low-gain (LG) mode;
3) Please visit our website http://www.infineon.com/rfmmics for alternative devices.
RF Transistor LNAs
Product
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BFP540ESD
BFP540FESD
AN142
12.0
1.6
-21
-13
5.0
3.3
SOT343
TSFP-4
BFP460
TR1038
18.0
1.6
-16
+1
2.8
10.0
SOT343
Note:
Please visit our website http://www.infineon.com/rftransistors for alternative devices.
RF MOSFET LNAs
Note:
Product
Application
Note
ID,max
[mA]
Ptot,max
[mW]
gfs
[mS]
Gp
[dB]
NF
[dB]
Cglss
[pF]
Cdss
[pF]
Package
BF2030W
-
40
200
31
23
1.5
2.4
1.3
SOT343
BF5020W
-
25
200
33
24
1.2
2.2
1.3
SOT343
Please visit our website http://www.infineon.com/rfmosfets for alternative devices.
RF Varactor Diodes for Tuning and Tank Circuit
Notes:
Product1)
Application
Note
CT2)
[pF]
@VR
[V]
CT2)
[pF]
@VR
[V]
CRatio
IR
[nA]
@VR
[V]
Package
BB555
-
18.7
1
2.1
28
8.9
< 10
30
SCD80
BB659
-
38.3
1
2.6
28
14.7
< 10
30
SCD80
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Please visit our website http://www.infineon.com/varactordiodes for alternative devices.
22
RF and Protection Devices
Application Guide for Consumer Applications
TVS ESD Diodes
Product
Application
Note
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD0P2RF-02LS
ESD0P2RF-02LRH
AN178
±5.3
±20
±29@±16
±38@±30
1
-
-
0.2
1
TSSLP-2-1
TSLP-2-17
ESD0P1RF-02LS
ESD0P1RF-02LRH
on request
±15
±10
±36@±8
±48@±16
1.5
-
-
0.1
1
TSSLP-2-1
TSLP-2-17
Notes:
1) Electrostatic discharge as per IEC 61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100 ns pulse length);
4) Maximum peak pulse current according to IEC 61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC 61000-4-5 (8/20 μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our website http://www.infineon.com/tvsdiodes for alternative devices.
23
RF and Protection Devices
Application Guide for Consumer Applications
4.3
Si-Tuner System for Terrestrial and Cable Digital TV
SAW
Terrestrial/Cable
Digital TV:
40 – 860 MHz
LNA
VGA
Mixer
VCO 1
Mixer
VCO 2
Si-Tuner
RF MMIC LNAs
Note:
Product
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BGA612
AN098
17.0
2.2
-9
0
5.0
20.0
SOT343
BGA614
AN067
18.5
2.2
-6
+6
5.0
40.0
SOT343
BGA616
AN098
18.5
2.8
0
+11
5.0
60.0
SOT343
Please visit our website http://www.infineon.com/rfmmics for alternative devices.
RF Transistor LNAs
Product
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BFP540ESD
BFP540FESD
AN142
12.0
1.6
-21
-13
5.0
3.3
SOT343
TSFP-4
BFP460
TR1038
18.0
1.6
-16
+1
2.8
10.0
SOT343
Note:
Please visit our website http://www.infineon.com/rftransistors for alternative devices.
24
RF and Protection Devices
Application Guide for Consumer Applications
4.4
Tuner and GPS Combi-Application
ANT Switch
FM/TV (Digital/Analog)
FM
VHF
SPDT
Switch
FM/Digital Tuner
(Telechips)
UHF
ESD
Diode
UHF
Analog Tuner
VHF
Processors
(Telechips)
SPDT Switch
GPS
GPS
Telechips
LNA
ESD
Diode
RF MMIC LNAs
Note:
Product
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BGA925L6
AN265
15.8
0.65
-8
+1
1.5…3.6
4.4
TSLP-6-2
BGA915N7
AN251
AN253
15.5
0.7
-5
+2
1.5…3.6
4.4
TSNP-7-6
BGA231L7
AN257
16.0
0.75
-5
0
1.5…3.6
4.4
TSLP-7-1
BGA715L7
AN161
20.2
0.75
-15
-7
1.5…3.6
3.3
TSLP-7-1
Please visit our website http://www.infineon.com/rfmmics for alternative devices.
RF Transistor LNAs
Product
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BFP740ESD
BFP740FESD
BFR740L3RH
AN120
19.7
0.7
-17
0
1.8
9.6
SOT343
TSFP-4
TSLP-3-9
BFP640ESD
BFP640FESD
AN194
16.5
0.7
-16
+1
2.1
7.5
SOT343
TSFP-4
BFP640F
AN128
15.2
0.8
-13
0
2.1
8.0
TSFP-4
BFP405
AN149
15.3
1.6
-23
-5
1.8
2.6
SOT343
Note:
Please visit our website http://www.infineon.com/rftransistors for alternative devices.
25
RF and Protection Devices
Application Guide for Consumer Applications
RF CMOS Switches
Product
Application
Note
Supply
[V]
Vctrl1)
[V]
IL2)
[dB]
Isolation3)
[dB]
P-0.1dB4)
[dBm]
Pin,max5)
[dBm]
Package
BGS12A
AN175
2.4…2.8
1.4…2.8
0.3/0.6
43/34
> 21
21
FWLP-6-1
BGS12AL7-4
AN175
2.4…2.8
1.4…2.8
0.4/0.5
32/25
> 21
21
TSLP-7-4
BGS12AL7-6
AN175
2.4…2.8
1.4…2.8
0.35/0.5
32/25
> 21
21
TSLP-7-6
BGS15AN16
AN230
2.85…4.7
1.4…2.8
0.25/0.55
38/30
> 30
30
TSNP-16-3
Notes:
1) Digital Control Voltage;
2) IL = Insertion Loss at 1.0/ 2.0 GHz; 3) Isolation at 1.0/ 2.0 GHz;
4) 0.1dB compression point;
5) maximum input power;
6) Please visit our website http://www.infineon.com/rfswitches for alternative devices.
TVS ESD Diodes
Product
Application
Note
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD0P2RF-02LS
ESD0P2RF-02LRH
AN178
±5.3
±20
±29@±16
±38@±30
1
-
-
0.2
1
TSSLP-2-1
TSLP-2-17
ESD0P1RF-02LS
ESD0P1RF-02LRH
on request
±15
±10
±36@±8
±48@±16
1.5
-
-
0.1
1
TSSLP-2-1
TSLP-2-17
Notes:
1) Electrostatic discharge as per IEC 61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100 ns pulse length);
4) Maximum peak pulse current according to IEC 61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC 61000-4-5 (8/20 μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our website http://www.infineon.com/tvsdiodes for alternative devices.
26
RF and Protection Devices
Application Guide for Consumer Applications
4.5
Cable TV Reverse Path Amplifier
Duplexer
RF
pre - Amp.
RF
Power Amp. Duplexer
Coax In
Coax Out
RF
Reverse Amp.
RF Transistor Driver/Buffer Amplifiers
Product
Application
Note
Gms
[dB]
NFmin
[dB]
OP-1dB
[dBm]
BFR770W
Notes:
OIP3
[dBm]
Supply
[V]
Current
[mA]
Package
on request
BFP650
BFP650F
on request
26.5
1.2
+17
+31
3.0
70.0
SOT343
TSFP-4
BFP450
on request
23.5
2.1
+19
+35
3.0
90.0
SOT343
1) Parameters are measured at 900 MHz;
2) Please visit our website http://www.infineon.com/driveramplifiers for alternative devices.
TVS ESD Diodes
Product
Application
Note
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD0P2RF-02LS
ESD0P2RF-02LRH
AN178
±5.3
±20
±29@±16
±38@±30
1
-
-
0.2
1
TSSLP-2-1
TSLP-2-17
ESD0P1RF-02LS
ESD0P1RF-02LRH
on request
±15
±10
±36@±8
±48@±16
1.5
-
-
0.1
1
TSSLP-2-1
TSLP-2-17
Notes:
1) Electrostatic discharge as per IEC 61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100 ns pulse length);
4) Maximum peak pulse current according to IEC 61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC 61000-4-5 (8/20 μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our website http://www.infineon.com/tvsdiodes for alternative devices.
27
RF and Protection Devices
Application Guide for Consumer Applications
5
Global Navigation Satellite System
Global Satellite Navigation Systems or GNSS are among the fastest growing businesses in the semiconductor
industry. Today, GNSS is much more than the well-known GPS, which was introduced for civilian use more than
a decade ago. Nations around the world are working on their own navigation satellite systems for strategic
reasons and also to offer improved user experience. Today, two GNSS systems are operational: the United
States GPS and the Russian GLONASS. The Galileo positioning system being developed by the European
Union is expected to be functional by 2014 and Chinese COMPASS is also expected to follow soon.
From a civilian usage point, additional systems added to GNSS bring with them the advantages of increased
satellite signal reception, increased coverage, higher precision and the facility for additional features such as
search and rescue (SAR). The most important market segments since 2008 are personal navigation devices
(PND) and GPS/GLONASS enabled mobile phones. The architecture and the performance of the so-called RF
front-end is the key contributor to fulfill strict requirements of the GPS/GLONASS system, because it consists of
the whole line-up between the GNSS antenna and the integrated GNSS chipset. The main challenges for the
growing GNSS-enabled mobile phone market are to achieve high sensitivity and high immunity against
interference of cellular signals driven by government regulations for safety and emergency reasons, for
example, in the US and Japan. This means reception for GPS/GLONASS signals at very low power levels down
to less than -160 dBm in mobile phones in the vicinity of co-existing high power cellular signals. In addition,
excellent ESD robustness characteristics and low power consumption for long battery usage duration are
mandatory features for portable and mobile phones.
Infineon Technologies is a market leader in GPS and other GNSS LNAs and works closely with various
reference designs for navigation applications in PND and cellular markets. Infineon Technologies offers a
complete product portfolio to all customers designing high performance flexible RF front-end solutions for
GNSS:
- Low Noise Amplifiers (LNA): consisting of a wide range of products like high performance MMICs as well
as cost effective and high end RF transistors
- Front-End Module (FEM): Infineon offers the world’s smallest GPS/GLONASS FEMs with LNAs and
band-pass filter(s) integrated into a single tiny package with well-optimized performance for navigation in
mobile phones
- Transient Voltage Suppression (TVS) Diodes: protecting GNSS antenna reliably up to 20 kV
- RF Switches: allow for diversity architecture with active antenna
28
RF and Protection Devices
Application Guide for Consumer Applications
Infineon’s GNSS LNA and FEM products have excellent features including low noise figure, high gain, high
linearity, high levels of ESD protection and low current consumption to fulfill customer’s needs to satisfy the
increasing requirements of GNSS systems. Infineon’s latest GNSS LNA products covering all current and future
GNSS systems include, BGA915N7 with very low noise figure and high out-of-band (OoB) IP3 to enhance the
interference immunity, BGA231L7 supporting drop-in approach for the major mobile phone platforms.
BGA925L6 as one of the smallest GNSS LNA worldwide with low noise figure and high out-of-band
performance, and BGA725L6 as one of the smallest GNSS LNA with high gain and low noise.
According to various GPS/GLONASS antenna designs in mobile phones, new GPS/GLONASS FEM products
are released with the following two topologies:
- SAW-Filter/LNA/SAW-Filter Topology: it offers the most compact integration of the whole GPS frontend into one small package and simplifies the system design.
-> BGM781N11
- SAW-Filter/LNA Topology: it enables system design with flexibility to place the GPS/GLONASS antenna
without degradation of the GPS/GLONASS performance.
-> BGM732L16, BGM1032N7, BGM1033N7 and BGM1034N7
All Infineon GNSS FEM products offer an ESD robustness at the RF input pin higher than 6kV according to
IEC61000-4-2 contact discharge standard.
Please visit our website www.infineon.com/gps and www.infineon.com/nav.frontend for more details on products
for navigation function in mobile phones and portable devices or contact your local Infineon representative.
29
RF and Protection Devices
Application Guide for Consumer Applications
5.1
Global Navigation Satellite System (GNSS) with Discrete RF Devices
GPS: 1575.42 MHz
GLONASS: 1598.0625 – 1609.3125 MHz
Galileo & COMPASS (北斗): 1559.052 – 1591.788 MHz
BPF
LNA
Amp
BPF
Mixer
BPF
Signal
Processing
ESD Diode
LO
GNSS Receiver
RF MMIC LNAs
Note:
Product
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BGA725L6
on request
18.8
0.7
-15
-6
1.5…3.6
3.6
TSLP-6-2
BGA925L6
AN265
AN266
AN267
AN272
AN274
15.8
0.65
-8
+1
1.5…3.6
4.4
TSLP-6-2
BGA915N7
AN251
AN253
15.5
0.7
-5
+2
1.5…3.6
4.4
TSNP-7-6
BGA231L7
AN250
AN257
AN271
AN273
AN276
16.0
0.7
-5
0
1.5…3.6
4.4
TSLP-7-1
TSNP-7-6
BGA715L7
AN161
20.2
0.7
-15
-7
1.5…3.6
3.3
TSLP-7-1
TSNP-7-6
Please visit our website http://www.infineon.com/gps for alternative devices.
RF Transistor LNAs
Product
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BFP740ESD
BFP740FESD
BFR740L3RH
AN120
19.7
0.7
-17
0
1.8
9.6
SOT343
TSFP-4
TSLP-3-9
BFP640ESD
BFP640FESD
AN194
16.5
0.7
-16
+1
2.1
7.5
SOT343
TSFP-4
BFP640F
AN128
15.2
0.8
-13
0
2.1
8.0
TSFP-4
BFP405
AN149
15.3
1.6
-23
-5
1.8
2.6
SOT343
Note:
Please visit our website http://www.infineon.com/rftransistors for alternative devices.
30
RF and Protection Devices
Application Guide for Consumer Applications
TVS ESD Diodes
Product
Application
Note
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD0P2RF-02LS
ESD0P2RF-02LRH
AN178
±5.3
±20
±29@±16
±38@±30
1
-
-
0.2
1
TSSLP-2-1
TSLP-2-17
ESD0P1RF-02LS
ESD0P1RF-02LRH
on request
±15
±10
±36@±8
±48@±16
1.5
-
-
0.1
1
TSSLP-2-1
TSLP-2-17
Notes:
1) Electrostatic discharge as per IEC 61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100 ns pulse length);
4) Maximum peak pulse current according to IEC 61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC 61000-4-5 (8/20 μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our website http://www.infineon.com/tvsdiodes for alternative devices.
31
RF and Protection Devices
Application Guide for Consumer Applications
5.2
Global Navigation Satellite System (GNSS) with integrated Front-End
Modules
GPS: 1575.42 MHz
GLONASS: 1598.0625 – 1609.3125 MHz
BPF
LNA
BPF
Amp
Mixer
BPF
Signal
Processing
FEM
ESD
Diode
FEM
GNSS Receiver
LO
RF MMIC FEMs (DC and In-Band Parameters)
Product
Application
Note
FEM
Conf.
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
BGM1032N7
AN263
AN264
SAW+LNA
14.8
1.65
-6
-6
1.5…3.6
4.0
BGM1033N7
AN261
AN262
SAW+LNA
14.8
1.65
-6
-6
1.5…3.6
4.0
BGM732N16
on request5)
SAW+LNA
18.3
1.7
-15
-6
1.5…3.6
3.3
BGM1034N7
AN268
AN269
SAW+LNA
17.0
1.7
-15
-10
1.5…3.6
3.9
BGM781N11
AN184
SAW+LNA
+SAW
18.6
1.7
-15
-7
1.5…3.6
3.3
IMD2²)
[dBm]
IIP33)
[dBm]
Package
RF MMIC FEMs (Out-of-Band Parameters)
Jammer signal selectivity [dBc]
800 MHz
1800 MHz
2400 MHz
IP-1dB1)
[dBm]
AN263
AN264
744)
43
54
30
-85
60
TSNP-7-10
BGM1033N7
AN261
AN262
54
43
54
30
-37
60
TSNP-7-10
BGM732N16
on request5)
50
40
60
30
-
-
TSNP-11-2
BGM1034N7
AN268
AN269
55
43
56
22
-33
55
TSNP-7-10
BGM781N11
AN184
90
80
72
20
-
-
TSNP-11-2
Product
Application
Note
BGM1032N7
Notes:
1) IP-1dB is measured at 900 and 1800 MHz;
2) IMD2 is measured at 1575 MHz with fin = 787.5 MHz with Pin = +15 dBm;
3) IIP3 is measured with f1 = 1713 MHz and f2 = 1851 MHz with P1/P2 = +10 dBm;
4) Measured at 787.5 MHz Notch. Out of the Notch: min. 53 dBc;
5) BGM732N16 is not for new designs anymore. Please take BGM1034N7 for your new designs.
6) All Infineon GNSS FEM products offer ESD robustness higher than 6 kV at RF input pin according to IEC61000-4-2 contact discharge standard.
7) Please visit our www.infineon.com/nav.frontend for alternative devices.
32
RF and Protection Devices
Application Guide for Consumer Applications
TVS ESD Diodes
Product
Application
Note
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD0P2RF-02LS
ESD0P2RF-02LRH
AN178
±5.3
±20
±29@±16
±38@±30
1
-
-
0.2
1
TSSLP-2-1
TSLP-2-17
ESD0P1RF-02LS
ESD0P1RF-02LRH
on request
±15
±10
±36@±8
±48@±16
1.5
-
-
0.1
1
TSSLP-2-1
TSLP-2-17
Notes:
1) Electrostatic discharge as per IEC 61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100 ns pulse length);
4) Maximum peak pulse current according to IEC 61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC 61000-4-5 (8/20 μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our website http://www.infineon.com/tvsdiodes for alternative devices.
33
RF and Protection Devices
Application Guide for Consumer Applications
6
Cordless Phones
6.1
1.9 GHz Cordless Phones
LNA
1.9 GHz
Rx
BPF
Transceiver IC
SPDT
Switch
Tx
ESD
Diode
PA
RF Transistor LNAs
Product
Application
Note
Gain
[dB]
NF
[dB]
OP-1dB
[dBm]
OIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BFP540ESD
BFP540FESD
AN057
19.0
0.9
-
+20
2.0
5.0
SOT343
TSFP-4
BFP420
BFP420F
AN015
18.5
1.1
-
+20
2.0
5.0
SOT343
TSFP-4
BFP460
on request
16.0
1.1
-
+22
3.0
5.0
SOT343
BFP640ESD
BFP640FESD
on request
22.5
0.6
-
+22
3.0
6.0
SOT343
TSFP-4
Note:
Please visit our website http://www.infineon.com/rftransistors for alternative devices.
RF Transistor Driver/Buffer Amplifiers
Note:
Product
Application
Note
Gms
[dB]
NFmin
[dB]
OP-1dB
[dBm]
OIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BFP750
TR1047
23.5
1.2
+16
+30
3.0
60.0
SOT343
BFP650
on request
20.5
0.9
+15
+29
3.0
30.0
SOT343
BFP650F
on request
21.5
1.4
+17
+31
3.0
80.0
TSFP-4
BFP450
AN026
15.5
1.7
+16
+29
3.0
50.0
SOT343
BFR380F
on request
13.5
1.6
+17
+29
3.0
40.0
TSFP-3
Please visit our website http://www.infineon.com/driveramplifiers for alternative devices.
RF PIN Diode Switches
Product1)
Application
Note
rF2)
[Ω]
@IF
[mA]
rF2)
[Ω]
@IF
[mA]
CT
[pF]
@VR
[V]
τL4)
[ns]
Package
BAR63-02L
BAR63-02V
BAR63-03W
AN049
2.0
1
1.0
10
0.21
5
75
TSLP-2-1
SC79
SOD323
BAR90-02LS
on request
1.3
3.0
0.8
10.0
0.25
1.0
750
TSSLP-2-1
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 100 MHz;
3) at 1 MHz;
4) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA;
5) Please visit our website http://www.infineon.com/pindiodes for alternative devices.
34
RF and Protection Devices
Application Guide for Consumer Applications
RF CMOS Switches
Product
Application
Note
Supply
[V]
Vctrl1)
[V]
IL2)
[dB]
Isolation3)
[dB]
P-0.1dB4)
[dBm]
Pin,max5)
[dBm]
Package
BGS12AL7-4
AN175
2.4…2.8
1.4…2.8
0.4/0.5
32/25
> 21
21
TSLP-7-4
Notes:
1) Digital Control Voltage;
2) IL = Insertion Loss at 1.0/ 2.0 GHz; 3) Isolation at 1.0/ 2.0 GHz;
4) 0.1dB compression point;
5) maximum input power;
6) Please visit our website http://www.infineon.com/rfswitches for alternative devices.
TVS ESD Diodes
Product
Application
Note
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD0P2RF-02LS
ESD0P2RF-02LRH
AN178
±5.3
±20
±29@±16
±38@±30
1
-
-
0.2
1
TSSLP-2-1
TSLP-2-17
ESD0P1RF-02LS
ESD0P1RF-02LRH
on request
±15
±10
±36@±8
±48@±16
1.5
-
-
0.1
1
TSSLP-2-1
TSLP-2-17
Notes:
1) Electrostatic discharge as per IEC 61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100 ns pulse length);
4) Maximum peak pulse current according to IEC 61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC 61000-4-5 (8/20 μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our website http://www.infineon.com/tvsdiodes for alternative devices.
35
RF and Protection Devices
Application Guide for Consumer Applications
6.2
2.4 GHz Cordless Phones
LNA
2.4 GHz
BPF
Rx
SPDT
Switch
Transceiver IC
Tx
ESD
Diode
BPF
BPF
Buffer Amp.
RF MMIC LNAs
Product
Application
Note
Gain
[dB]
TR152
17.7
BGA628L7
1)
2)
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
1.4
-18
-10
2.8
5.2
TSLP-7-8
2)
2)
2)
2)
BGA777L7
TR1006
16.5/-7
1.2/7
-6/0
-2/+6
2.8
4.1/0.6
TSLP-7-1
BGA622
AN069
12.6
1.3
-15
-4
2.8
5.4
SOT343
Notes:
1) LNA with two gain modes (high-gain/low-gain);
2) Values in high-gain (HG) / low-gain (LG) mode;
3) Please visit our website http://www.infineon.com/rfmmics for alternative devices.
RF Transistor LNAs
Product
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BFP740ESD
AN217
17.6
0.78
-7
-4
3.3
13.1
SOT343
BFP740FESD
AN171
17.4
0.8
-13
-3
3.6
14.7
TSFP-4
BFP640ESD
AN218
16.5
0.83
-12
+9
3.0
7.3
SOT343
BFP640FESD
AN129
15.5
0.9
-11
0
3.0
6.3
TSFP-4
Package
Note:
Please visit our website http://www.infineon.com/rftransistors for alternative devices.
RF Transistor Driver/Buffer Amplifiers
Note:
Product
Application
Note
Gma
[dB]
NFmin
[dB]
OP-1dB
[dBm]
OIP3
[dBm]
Supply
[V]
Current
[mA]
BFR380F
on request
11.0
1.6
+17
+29
3.0
40.0
TSFP-3
BFP450
AN145
13.5
2.2
+19
+30
2.4
90.0
SOT343
BFP650
AN153
17.5
1.4
+17
+30
2.4
70.0
SOT343
Please visit our website http://www.infineon.com/driveramplifiers for alternative devices.
RF PIN Diode Switches
Product1)
Application
Note
rF2)
[Ω]
@IF
[mA]
rF2)
[Ω]
@IF
[mA]
CT3)
[pF]
@VR
[V]
τL4)
[ns]
Package
BAR63-02L
BAR63-02V
BAR63-03W
TR131
2.0
1
1.0
10
0.21
5
75
TSLP-2-1
SC79
SOD323
BAR90-02LS
AN197
1.3
3
0.8
10.0
0.25
1.0
750
TSSLP-2-1
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 100 MHz;
3) at 1 MHz;
4) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA;
5) Please visit our website http://www.infineon.com/pindiodes for alternative devices.
36
RF and Protection Devices
Application Guide for Consumer Applications
TVS ESD Diodes
Product
Application
Note
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD0P2RF-02LS
ESD0P2RF-02LRH
AN178
±5.3
±20
±29@±16
±38@±30
1
-
-
0.2
1
TSSLP-2-1
TSLP-2-17
ESD0P1RF-02LS
ESD0P1RF-02LRH
on request
±15
±10
±36@±8
±48@±16
1.5
-
-
0.1
1
TSSLP-2-1
TSLP-2-17
Notes:
1) Electrostatic discharge as per IEC 61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100 ns pulse length);
4) Maximum peak pulse current according to IEC 61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC 61000-4-5 (8/20 μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our website http://www.infineon.com/tvsdiodes for alternative devices.
37
RF and Protection Devices
Application Guide for Consumer Applications
6.3
5.8 GHz Cordless Phones
LNA
5.8 GHz
BPF
Rx
SPDT
Switch
Transceiver IC
Tx
ESD
Diode
BPF
BPF
Buffer Amp.
RF MMIC LNAs
Product
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BGA758L7
AN188
AN228
12.5
1.3
-3
+8
3.3
7.0
TSLP-7-8
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
Note:
Please visit our website http://www.infineon.com/rfmmics for alternative devices.
RF Transistor LNAs
Product
Application
Note
Gain
[dB]
NF
[dB]
BFP840ESD
BFP840FESD
BFR840L3RH
SOT343
TSFP-4
TSLP-3-9
on request
BFP740ESD
AN219
15.5
1.3
-6
+7
3.0
14.7
SOT343
BFP740FESD
AN220
17.1
1.4
-9
+1
3.0
14.8
TSFP-4
BFR740L3RH
AN115
10.0
1.3
-5
+7
3.0
10.0
TSLP-3-9
BFP720ESD
TR162
15.2
0.93
-8
+5
3.0
10.3
SOT343
BFP720FESD
TR1063
18.6
1.6
-8
+2
3.0
12.2
TSFP-4
OIP3
[dBm]
Supply
[V]
Current
[mA]
Package
Note:
Please visit our website http://www.infineon.com/rftransistors for alternative devices.
RF Transistor Driver/Buffer Amplifiers
Product
Application
Note
Gma
[dB]
NFmin
[dB]
OP-1dB
[dBm]
BFP780
Note:
on request
BFP750
BFP750F
AN246
14.0
1.7
+15
+27
3.0
60.0
SOT343
TSFP-4
BFP650
BFP650F
on request
10.5
2.0
+6.5
+29.5
3.0
70.0
SOT343
TSFP-4
Please visit our website http://www.infineon.com/driveramplifiers for alternative devices.
RF PIN Diode Switches
Product1)
Application
Note
rF2)
[Ω]
@IF
[mA]
rF2)
[Ω]
@IF
[mA]
CT3)
[pF]
@VR
[V]
τL4)
[ns]
Package
BAR90-02LS
on request
1.3
3.0
0.8
10.0
0.25
1.0
750
TSSLP-2-1
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 100 MHz;
3) at 1 MHz;
4) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA;
5) Please visit our website http://www.infineon.com/pindiodes for alternative devices.
38
RF and Protection Devices
Application Guide for Consumer Applications
RF Schottky Diodes for Power Detector
Application
Note
CT2)
[pF]
VR
[V]
VF
[mV]
IF
[mA]
VF
[mV]
IF
[mA]
IR
[μA]
VR
[V]
Package
BAT62-02L
-
0.35
0
580
2
-
-
< 10
40
TSLP-2-1
BAT62-02LA4
-
0.35
0
580
2
-
-
< 10
40
TSSLP-2-1
-
0.35
0
580
2
-
-
< 10
40
TSLP-4-4
-
0.26
0
230
1
320
10
<5
4
TSLP-2-7
Product1)
BAT62-07L4
D
BAT15-02LRH
BAT15-07LRH
D
-
0.26
0
230
1
320
10
<5
4
TSLP-4-7
BAT15-098LRH
Q
-
0.26
0
230
1
320
10
<5
4
TSLP-4-7
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices.
TVS ESD Diodes
Product
Application
Note
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD0P2RF-02LS
ESD0P2RF-02LRH
AN178
±5.3
±20
±29@±16
±38@±30
1
-
-
0.2
1
TSSLP-2-1
TSLP-2-17
ESD0P1RF-02LS
ESD0P1RF-02LRH
on request
±15
±10
±36@±8
±48@±16
1.5
-
-
0.1
1
TSSLP-2-1
TSLP-2-17
Notes:
1) Electrostatic discharge as per IEC 61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100 ns pulse length);
4) Maximum peak pulse current according to IEC 61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC 61000-4-5 (8/20 μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our website http://www.infineon.com/tvsdiodes for alternative devices.
39
RF and Protection Devices
Application Guide for Consumer Applications
7
Active Antenna for Portable Applications (Tuner, Cellular, GPS,
SDARs…)
ANT
1st LNA
2nd LNA
BPF
3rd LNA
Receiver
IC
Cable
ESD Diode
st
RF Transistor LNAs (1 /2
nd
stage)
Application
Note
Gain
[dB]
NF
[dB]
OP-1dB
[dBm]
OIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BFP840ESD1)
on request
20.5
0.75
+7
+20
1.5
5.0
SOT343
1)
on request
19.5
0.75
+10
+24
2.0
6.0
SOT343
BFP740ESD1)
on request
19.0
0.9
+8
+22
3.0
6.0
SOT343
on request
19.0
0.8
+8
+22
3.0
6.0
TSFP-4
on request
21.0
0.7
+12
+27
3.0
6.0
SOT343
on request
21.5
0.6
+11
+26
3.0
6.0
TSFP-4
on request
18.0
1.0
+11
+26
3.0
6.0
SOT343
on request
14.5
1.0
+12
+28
3.0
6.0
SOT343
Product
BFP842ESD
BFP740FESD
BFP640ESD
1)
2)
BFP640FESD2)
BFP540ESD
3)
3)
BFP460
Notes:
1) Parameters are measured at 5.5 GHz. OP-1dB and OIP3 are measured at 20 mA;
2) Parameters are measured at 2.4 GHz. OP-1dB and OIP3 are measured at 30 mA;
3) Parameters are measured at 2.4 GHz. OP-1dB and OIP3 are measured at 20 mA;
4) Please visit our website http://www.infineon.com/rftransistors for alternative devices.
rd
RF Transistor LNAs (3 stage)
Notes:
Product
Application
Note
Gain
[dB]
NF
[dB]
OP-1dB
[dBm]
OIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BFR380F
on request
11.0
1.6
+17
+29
3.0
40.0
TSFP-3
BFP450
on request
13.5
2.2
+19
+30
2.4
90.0
SOT343
BFP650
on request
17.5
1.4
+17
+30
2.4
70.0
SOT343
1) Parameters are measured at 2.4 GHz;
2) Please visit our website http://www.infineon.com/rftransistors for alternative devices.
TVS ESD Diodes
Product
Application
Note
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD0P2RF-02LS
ESD0P2RF-02LRH
AN178
±5.3
±20
±29@±16
±38@±30
1
-
-
0.2
1
TSSLP-2-1
TSLP-2-17
ESD0P1RF-02LS
ESD0P1RF-02LRH
on request
±15
±10
±36@±8
±48@±16
1.5
-
-
0.1
1
TSSLP-2-1
TSLP-2-17
Notes:
1) Electrostatic discharge as per IEC 61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100 ns pulse length);
4) Maximum peak pulse current according to IEC 61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC 61000-4-5 (8/20 μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our website http://www.infineon.com/tvsdiodes for alternative devices.
40
RF and Protection Devices
Application Guide for Consumer Applications
8
Cellular Modems for Data Communication
A general block diagram of a modern mobile phone front-end of 2G/2.5G and 3G/3.5G/4G modem
(GSM/EDGE/UMTS/LTE/TDS-CDMA/TDS-LTE) is shown in the block diagram below.
Infineon Technologies is one of the leading companies with broad product portfolio to offer high performance RF
front-end components for various mobile and wireless applications by using industry standard silicon process.
For the mobile phone front-end, Infineon offers various RF CMOS primary antenna switches, diversity antenna
switches, as well as MMIC SiGe LNAs and Schottky diode power detectors.
Infineon’s RF CMOS switches are widely used for band selection/switching or diversity switching at the antenna.
PIN diodes can be used for switching if there is a requirement on much lower IMD generation in the mobile
phone. Low barrier power detection Schottky diodes are used for precise output power control after the power
amplifier.
Our SiGe MMIC LNAs with their excellent low noise figure enhance the sensitivity of the RF modem by several
dB and offer system layout flexibility by suppressing noise contribution from losses of signal lines and from the
SAW filters as well as the receiver.
For detailed information about our product portfolio for cellular modems and their applications, please refer to
our Application Guide – Part 1: Mobile Communication. Or you can contact Infineon’s Regional Offices or one of
Infineon Worldwide Distribution Partners in your area to get all the support you might need.
ANT Switch
2G/2.5G
Transceiver
IC
Power Detector
PA
3G/4G
Transceiver
IC
Duplexer
LNA
41
SAW
RF and Protection Devices
Application Guide for Consumer Applications
9
Bluetooth (BT) Front-End for Bluetooth Class 1
LNA
2.45 GHz
Rx
BPF
Bluetooth
Transceiver IC
SPDT
Switch
Tx
ESD
Diode
Buffer Amp. Harmonic
Filter
RF MMIC LNAs
Product
Application
Note
Gain
[dB]
TR152
17.7
BGA628L7
1)
2)
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
1.4
-18
-10
2.8
5.2
TSLP-7-8
2)
2)
2)
2)
BGA777L7
TR1006
16.5/-7
1.2/7
-6/0
-2/+6
2.8
4.1/0.6
TSLP-7-1
BGA622
AN069
12.6
1.3
-15
-4
2.8
5.4
SOT343
Notes:
1) LNA with two gain modes (high-gain/low-gain);
2) Values in high-gain (HG) / low-gain (LG) mode;
3) Please visit our website http://www.infineon.com/rfmmics for alternative devices.
RF Transistor LNAs
Product
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BFP740ESD
AN217
17.6
0.8
-7
-4
3.3
13.1
SOT343
BFP740FESD
AN171
17.4
0.8
-13
-3
3.6
14.7
TSFP-4
BFP640ESD
AN218
16.5
0.8
-12
+9
3.0
7.3
SOT343
BFP640FESD
AN129
15.5
0.9
-11
0
3.0
6.3
TSFP-4
Note:
Please visit our website http://www.infineon.com/rftransistors for alternative devices.
RF Transistor Driver/Buffer Amplifiers
Note:
Product
Application
Note
Gma
[dB]
NFmin
[dB]
OP-1dB
[dBm]
OIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BFR380F
on request
11.0
1.6
+17
+29
3.0
40.0
TSFP-3
BFP450
AN145
13.5
2.2
+19
+30
2.4
90.0
SOT343
BFP650
AN153
17.5
1.4
+17
+30
2.4
70.0
SOT343
Please visit our website http://www.infineon.com/driveramplifiers for alternative devices.
RF PIN Diode Switches
Product1)
Application
Note
rF2)
[Ω]
@IF
[mA]
rF2)
[Ω]
@IF
[mA]
CT3)
[pF]
@VR
[V]
τL4)
[ns]
Package
BAR90-02LS
AN197
1.3
3.0
0.8
10.0
0.25
1.0
750
TSSLP-2-1
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 100 MHz;
3) at 1 MHz;
4) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA;
5) Please visit our website http://www.infineon.com/pindiodes for alternative devices.
42
RF and Protection Devices
Application Guide for Consumer Applications
TVS ESD Diodes
Product
Application
Note
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD0P2RF-02LS
ESD0P2RF-02LRH
AN178
±5.3
±20
±29@±16
±38@±30
1
-
-
0.2
1
TSSLP-2-1
TSLP-2-17
ESD0P1RF-02LS
ESD0P1RF-02LRH
on request
±15
±10
±36@±8
±48@±16
1.5
-
-
0.1
1
TSSLP-2-1
TSLP-2-17
Notes:
1) Electrostatic discharge as per IEC 61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100 ns pulse length);
4) Maximum peak pulse current according to IEC 61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC 61000-4-5 (8/20 μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our website http://www.infineon.com/tvsdiodes for alternative devices.
43
RF and Protection Devices
Application Guide for Consumer Applications
10
Base Stations
Rx
LPF
LNA
Buffer Amp LPF
Mixer
IF Amp
LPF
Baseband
IC
VCO
Tx
PA
Mixer
Driver Amp LPF
LPF
IF Amp
RF Transistor LNAs
Product
Application
Note
Gms
[dB]
NFmin
[dB]
OP-1dB
[dBm]
OIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BFP740ESD
BFP740FESD
on request
22.5
0.55
+8
+22
3.0
6.0
SOT343
TSFP-4
BFP640ESD
BFP640FESD
on request
22.5
0.6
+8
+22
3.0
6.0
SOT343
TSFP-4
BFP460
on request
16.0
1.1
+8
+22
3.0
5.0
SOT343
OIP3
[dBm]
Supply
[V]
Current
[mA]
Package
Notes:
1) Parameters are measured at 1.9 GHz;
2) Please visit our website http://www.infineon.com/rftransistors for alternative devices.
RF Transistor Driver/Buffer Amplifiers
Product
Application
Note
Gms
[dB]
NFmin
[dB]
OP-1dB
[dBm]
BFP780
Notes:
on request
BFP750
TR1047
TR1048
23.5
1.2
+16
+30
3.0
60.0
SOT343
BFP650
on request
20.5
0.9
+15
+29
3.0
30.0
SOT343
BFP650F
AN153
21.5
1.3
+17
+31
3.0
80.0
TSFP-4
BFP450
AN026
15.5
1.7
+16
+29
3.0
50.0
SOT343
BFR380F
AN075
13.5
1.6
+17
+29
3.0
40.0
TSFP-3
1) Parameters are measured at 1.9 GHz;
2) Please visit our website http://www.infineon.com/driveramplifiers for alternative devices.
RF Transistor Oscillators
Note:
Product
Application
Note
Technology
fT1)
[GHz]
Af2)
[-]
Kf3)
[-]
fC4)
[kHz]
Package
BFP410
on request
Si
BFR360F
on request
Si
25
2.1
1.7E-10
131
SOT343
14
1.75
1.0E-11
-
TSFP-3
1) Transit Frequency;
2) Af and Kf are spice model parameters for 1/f noise;
3) Corner frequency of 1/f noise to white noise floor, measured at 10 mA;
4) Please visit our website http://www.infineon.com/rftransistors for alternative devices.
44
RF and Protection Devices
Application Guide for Consumer Applications
RF Varactor Diodes
Product1)
BBY51
Application
Note
CT2)
[pF]
@VR
[V]
CT2)
[pF]
@VR
[V]
CRatio
IR
[nA]
@VR
[V]
Package
-
5.3
1
3.1
4
1.7
< 10
6
SOT23
-
1.8
1
1.1
4
1.6
< 10
6
TSLP-2-1
-
5.3
1
2.4
3
2.2
< 10
4
SOT23
D
BBY52-02L
BBY53
Notes:
D
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Please visit our website http://www.infineon.com/varactordiodes for alternative devices.
RF Transistor Mixers
Note:
Product
Application
Note
Technology
fT1)
[GHz]
Af2)
[-]
Kf3)
[-]
fC4)
[kHz]
Package
BFP540
on request
Si
30
2.0
8.9E-11
86
SOT343
BFP420
on request
Si
25
2.0
6.6E-11
95
SOT343
BFR360F
on request
Si
14
1.75
1.0E-11
-
TSFP-3
1) Transit Frequency;
2) Af and Kf are spice model parameters for 1/f noise;
3) Corner frequency of 1/f noise to white noise floor, measured at 10 mA;
4) Please visit our website http://www.infineon.com/rftransistors for alternative devices.
45
RF and Protection Devices
Application Guide for Consumer Applications
11
RF Function Blocks with Discrete Devices
11.1
Driver Amplifiers
Driver amplifier or also known as pre-power amplifier is an important functional block in systems requiring high
power output. The power amplifier requires a certain power level of the input signal to operate in the right mode,
which in some cases cannot be delivered by the transceiver IC. In this case, a driver amplifier is required to
provide the right signal level to the power amplifier (PA). Driver amplifiers are generally operated in class-A
mode to enable high linearity and high gain, thereby keeping the spurious signals generated by the PA low, by
reducing intermodulation products. Class-A amplifiers are also the right choice for broadband operation at low
power levels.
Infineon offers several RF transistors to be used as driver amplifiers with different current capabilities, linearity,
gain and output powers as in the table below.
Please visit our website www.infineon.com/driveramplifiers or www.infineon.com/rftransistors for more details on
products for driver amplifier applications or contact Infineon’s Regional Offices or one of Infineon Worldwide
Distribution Partners in your area to get all the support you might need.
RF Transistor Driver/Buffer Amplifiers
Product
Application
Note
Gms
[dB]
NFmin
[dB]
OP-1dB
[dBm]
BFP780
Notes:
OIP3
[dBm]
Supply
[V]
Current
[mA]
Package
on request
BFP750
AN245
AN246
23.5
1.2
+16
+30
3.0
60.0
SOT343
BFP650
AN145
20.5
0.9
+15
+29
3.0
30.0
SOT343
BFP650F
AN153
21.5
1.4
+17
+31
3.0
80.0
TSFP-4
BFP450
AN026
AN050
15.5
1.7
+16
+29
3.0
50.0
SOT343
BFR380F
AN196
13.5
1.6
+17
+29
3.0
40.0
TSFP-3
1) Parameters are measured at 1.9 GHz;
2) Please visit our website http://www.infineon.com/driveramplifiers for alternative devices.
46
RF and Protection Devices
Application Guide for Consumer Applications
11.2
Broadband Amplifier
Broadband amplifiers are easy to use solutions for the system designer as they cover a wide frequency range.
They are useful in two scenarios:
- Using the device for broadband operation
- Usability of the same device for different application frequencies
Applications like CATV and Digital TV require broadband operation of their components. Infineon offers three
MMIC LNAs for TV application with varying current consumption and linearity, as shown in the table below.
They are LNAs with Darlington circuits offering low noise figure and high linearity. These LNAs can be used for
frequencies up to 6 GHz and matched to 50 Ohm at input and output.
In additions, Infineon offers another MMIC LNA BGB741L7ESD which is also a broadband amplifier that can be
used up to 6 GHz with no external matching required. It has an integrated feedback through which it delivers
stable, broadband operation with in-built temperature compensation. Please refer to the application note at the
following link to gain deeper insight into BGB741L7ESD used as LNA for FM, VHF & UHF TV, WiMAX
applications.
RF MMIC Broadband Amplifiers
Product
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BGB741L7ESD1)
AN207
19.6
1.45
-7.6
5.2
4.0
20.0
TSLP-7-1
3)
BGA612
AN098
17.0
2.2
-9
0
5.0
20.0
SOT343
BGA6143)
AN067
18.0
2.2
-6
6
5.0
40.0
SOT343
3)
BGA616
AN098
18.0
2.8
0
11
5.0
60.0
SOT343
BGA728L72)
AN163
AN231
15.8
1.3
-10
-7
2.8
5.85
TSLP-7-1
BGA4164)
Notes:
AN070
20.0
1.7
-17.5
-8.8
3.0
5.4
SOT143
4)
BGA420
on request
17.0
2.2
-2.5
-
3.0
6.7
SOT343
BGA4274)
on request
22.0
2.0
-
-
3.0
9.4
SOT343
1) The useful frequency range is from DC to 6 GHz, and the measured frequency range is 2.3 – 2.7 GHz;
2) The useful frequency range is from 40 MHz to 3 GHz, and the measured frequency range is 470 – 860 MHz;
3) The useful frequency range is from DC to 2.5 GHz, and the measured frequency range is from DC to 1.5 GHz;
4) The useful frequency range is from DC to 3 GHz, and the measured frequency is 900 MHz;
5) Please visit our website http://www.infineon.com/broadbandamplifiers for alternative devices.
High performance general purpose RF transistors are also well suitable for broadband amplifier applications by
using a simple RC feedback circuit between collector and base. This kind of solutions offers you the full
flexibility to define the frequency band of interest.
Please visit our website www.infineon.com/broadbandamplifiers or www.infineon.com/rftransistors for more
details on products for driver amplifier applications or contact Infineon’s Regional Offices or one of Infineon
Worldwide Distribution Partners in your area to get all the support you might need.
47
RF and Protection Devices
Application Guide for Consumer Applications
11.3
Wide Bandwidth Single Pole Double Throw Switch
RF
Common
Ictrl1
Ictrl2
J1
J2
PIN Diode
PIN Diode
RF PIN Diodes Switches
Product1)
Application
Note
rF2)
[Ω]
@IF
[mA]
rF2)
[Ω]
@IF
[mA]
CT
[pF]
@VR
[V]
τL4)
[ns]
Package
BAR63-02L
BAR63-02V
BAR63-03W
AN049
2.0
1
1.0
10
0.21
5
75
TSLP-2-1
SC79
SOD323
BAR90-02LRH
BAR90-02LS
AN197
1.3
3
0.8
10
0.25
1
750
TSLP-2-7
TSSLP-2-1
BAR90-098LRH
AN197
1.3
3
0.8
10
0.25
1
750
TSLP-4-7
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 100 MHz;
3) at 1 MHz;
4) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA;
5) Please visit our website http://www.infineon.com/pindiodes for alternative devices.
48
RF and Protection Devices
Application Guide for Consumer Applications
11.4
Discrete Voltage-Controlled Oscillators
Vdd
Si BJT
Transistor
RFout
Vctrl
Varactor
Diode
Application Example: VCO in Colpitts Topology
RF Transistor Oscillators
Product
Application
Note
Technology
fT1)
[GHz]
BFP410
on request
Si
BFR360F
on request
Si
Note:
Af2)
[-]
Kf3)
[-]
fC4)
[kHz]
Package
25
2.1
1.7E-10
131
SOT343
14
1.75
1.0E-11
-
TSFP-3
1) Transit Frequency;
2) Af and Kf are spice model parameters for 1/f noise;
3) Corner frequency of 1/f noise to white noise floor, measured at 10 mA;
4) Please visit our website http://www.infineon.com/rftransistors for alternative devices.
RF Varactor Diodes
Product1)
BBY51
D
BBY52-02L
BBY53
Notes:
D
Application
Note
CT2)
[pF]
@VR
[V]
CT2)
[pF]
@VR
[V]
CRatio
IR
[nA]
@VR
[V]
Package
-
5.3
1
3.1
4
1.7
< 10
6
SOT23
-
1.8
1
1.1
4
1.6
< 10
6
TSLP-2-1
-
5.3
1
2.4
3
2.2
< 10
4
SOT23
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Please visit our website http://www.infineon.com/varactordiodes for alternative devices.
49
RF and Protection Devices
Application Guide for Consumer Applications
11.5
Voltage Tuned Filter
Vcontrol
Varactor
Diode
RF Output
RF Input
Resonators
Application 1
RF Input
RF Output
Varactor
Diode
Varactor
Diode
Vcontrol
Application 2
RF Varactor Diodes
Product1)
BBY51
D
BBY52-02L
BBY53
Notes:
D
Application
Note
CT2)
[pF]
@VR
[V]
CT2)
[pF]
@VR
[V]
CRatio
IR
[nA]
@VR
[V]
Package
-
5.3
1
3.1
4
1.7
< 10
6
SOT23
-
1.8
1
1.1
4
1.6
< 10
6
TSLP-2-1
-
5.3
1
2.4
3
2.2
< 10
4
SOT23
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Please visit our website http://www.infineon.com/varactordiodes for alternative devices.
50
RF and Protection Devices
Application Guide for Consumer Applications
11.6
Single Schottky Diode Detector
Schottky
Detector
Diode
Detected
Output
RF Input
RF
Choke
Filter
Capacitor
Filter
Resistor
RF Schottky Diodes for Power Detector
Application
Note
CT2)
[pF]
@VR
[V]
VF
[mV]
@IF
[mA]
VF
[mV]
@IF
[mA]
IR
[μA]
@VR
[V]
BAT62-02L
AN185
0.35
0
580
2
-
-
< 10
40
TSLP-2-1
BAT62-02LA4
AN185
0.35
0
580
2
-
-
< 10
40
TSSLP-2-1
AN185
0.35
0
580
2
-
-
< 10
40
TSLP-4-4
Product1)
BAT62-07L4
D
BAT15-02LRH
Package
on request
0.26
0
230
1
320
10
<5
4
TSLP-2-7
BAT15-07LRH
D
on request
0.26
0
230
1
320
10
<5
4
TSLP-4-7
BAT15-098LRH
D
on request
0.26
0
230
1
320
10
<5
4
TSLP-4-7
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices.
51
RF and Protection Devices
Application Guide for Consumer Applications
11.7
High Isolation Schottky Diode Pair for Power Detection
to Antenna Switch
PA
Detector Diode
Differential
Amplifier
Reference Diode
RF Schottky Diodes for Power Detector
Product1)
Application
Note
CT2)
[pF]
@VR
[V]
VF
[mV]
@IF
[mA]
VF
[mV]
@IF
[mA]
IR
[μA]
@VR
[V]
Package
BAT62-09S
D
AN185
0.65
0.2
190
1
-
-
10
3
SOT363
BAT63-07W
D
-
0.65
0.2
190
1
-
-
10
3
SOT343
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices.
52
RF and Protection Devices
Application Guide for Consumer Applications
11.8
Wide Bandwidth PIN Diode Variable Attenuator
Vtune
RF
RF
PIN Diode
VREF
Application 1: Wide Bandwidth PIN Diode Variable Attenuator
Bias1
ANT
Bias1
DC
Block
Tx
Rx
PIN Diode
PIN Diode
Application 2: PIN Diode Variable Attenuator
RF PIN Diodes for Attenuator
Product1)
Application
Note
rF2)
[Ω]
@IF
[mA]
rF2)
[Ω]
@IF
[mA]
CT
[pF]
@VR
[V]
τL4)
[ns]
Package
BAR64-02LRH
BAR64-02V
BAR64-03W
on request
12.5
1
2.1
10
0.23
20
1550
TSLP-2-7
SC79
SOD323
BAR50-02LRH
BAR50-02V
BAR50-03W
on request
14
1
3
10
0.24
1
1100
TSLP-2-7
SC79
SOD323
BA595
on request
210
0.1
4.5
10
0.35
1
1600
SOD323
BAR14-1
BAR15-1
BAR16-1
on request
2800
0.01
7
10
0.5
1
1000
SOT23
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 100 MHz;
3) at 1 MHz;
4) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA;
5) Please visit our website http://www.infineon.com/pindiodes for alternative devices.
53
RF and Protection Devices
Application Guide for Consumer Applications
11.9
Passive Mixer with Schottky diodes
LOin
RFin
IFout
Passive Mixer with Single Schottky Diode
LOin
RFin
IFout
Balanced Mixer with Schottky Diodes
IFout
RFin
LOin
Double Balanced Mixer with Schottky Diodes
RF Schottky Diode Mixers
Product1)
Application
Note
CT2)
[pF]
@VR
[V]
VF
[mV]
@IF
[mA]
VF
[mV]
@IF
[mA]
IR
[μA]
@VR
[V]
Package
BAT15
AN198
0.26
0
230
1
320
10
<5
4
TSLP-2-7
TSLP-4-7
SOD323
SOT143
SOT323
BAT24-02LS
AN190
0.21
0
230
1.0
320
10.0
< 5.0
4.0
TSSLP-2-1
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices.
54
RF and Protection Devices
Application Guide for Consumer Applications
11.10
Active Mixer with Bipolar Transistors
VCC
IFout
LOin
RFin
Circuit Example of active mixer with a bipolar transistor
RF Transistor Mixers
Note:
Product
Application
Note
Technology
fT1)
[GHz]
Af2)
[-]
Kf3)
[-]
fC4)
[kHz]
Package
BFP540
on request
Si
30
2.0
8.9E-11
86
SOT343
BFP420
on request
Si
25
2.0
6.6E-11
95
SOT343
BFR360F
on request
Si
14
1.75
1.0E-11
-
TSFP-3
1) Transit Frequency;
2) Af and Kf are spice model parameters for 1/f noise;
3) Corner frequency of 1/f noise to white noise floor, measured at 10 mA;
4) Please visit our website http://www.infineon.com/rftransistors for alternative devices.
55
RF and Protection Devices
Application Guide for Consumer Applications
12
Interface Protection
In today’s electronics, being faster, smaller and smarter creates profitability by enabling new and better
applications. The race to pack more and more high-speed functions in a smaller space accelerates
miniaturization roadmaps. However, the downscale of semiconductor chips together with the increase of doping
levels results in a dramatic reduction of the thin gate oxide layer and the width of the pn-junction in
semiconductor chips. This, in combination with greater circuit population, increases the susceptibility of the
semiconductor chip to ESD.
The subsequent failures of the electronic equipment can be noticed as hard failures, latent damage or
temporary malfunction. Hard failures are easier to spot, and in general require the failed device to be replaced.
In the best case the failure will be detected before the equipment leaves the factory and customers will never
receive it. Failures leading to temporary malfunction of equipment or latent failures are quite common and very
difficult to detect or trace in the field. Temporary malfunctions may go unreported but can result in negative
customer impressions as the user may need to reset the equipment. A product recall for swapping or repairing
due to ESD failures may cause the company a cost several times higher than the cost of the device itself.
An efficient system design normally includes the implementation of a shielded chassis in order to minimize ESD
risks. Nevertheless, ESD strikes represent a permanent threat to device reliability as they can easily find a way
to bypass the shielded chassis and be injected into the IC/ASICs. Connectors and antennas exposed to the
outside world are possible entry points of electrostatic discharges generated by end users. The only way to
ensure stable operation and maximum reliability at the system level is to ensure that equipment is properly
protected against electrostatic discharge and transients by an external protection device.
Infineon’s Value Proposition
Improve ESD immunity at system level by providing first-class protection beyond IEC 61000-4-2 level-4
standard.
- Superior multi-strike absorption capability.
- Safe and stable clamping voltages to protect even the most sensitive electronic equipment.
- Protection devices that fully comply with high-speed signal quality requirements.
- Array solutions that boost space saving in the board and reduce part count.
- Easy-to-use single devices for space-constrained applications.
- Discrete components that drain extremely wire low leakage currents and help to extend battery duration.
- Packages enabling easy PCB layout.
For detailed information about our TVS diode portfolio and their applications, please refer to our Application
Guide – Part 4: Protection or our ESD Protection Brochure www.infineon.com/tvs.brochure. You can also visit
our website for protection devices: www.infineon.com/protection.
56
RF and Protection Devices
Application Guide for Consumer Applications
12.1
Interface Protection with Discrete ESD TVS Diodes
Infineon offers various high performance types of discrete TVS protection devices for mobile phone applications
to prevent our customers’ mobile phones from ESD attacks. Following is a short overview of the available TVS
protection devices from Infineon for various RF and digital interfaces of mobile phones to the external world. For
detailed information about our TVS diode portfolio and their applications, please refer to our Application Guide –
Part 4: Protection or our ESD Protection Brochure www.infineon.com/tvs.brochure. You can also visit our
website for protection devices: www.infineon.com/protection.
Analog/Digital Interfaces
Headset
TV/Audio
ESD5V3S1B
ESD5V3L1B
ESD8V0-series
LCD
ESD5V3U-series
ESD5V3L1B-series
USB1.1/2.0
ESD5V3U-series
USB3.0
ESD3V3U4ULC
Camera
ESD5V3U-series
ESD5V3L1B-series
SIM Card
SD Card
MM Card
ESD5V3U4U-HDMI
ESD5V3U-series
ESD5V3L1B-series
I/O Data
ESD8V0-series
ESD5V3S1B-series
ESD5V3L1B-series
HDMI
ESD5V3U4U-HDMI
ESD5V3U-series
Human
Interfaces
ESD8V0-series
ESD5V3L1B-series
ESD5V3L1U-02LRH
SWP
ESD3V3XU1US
Ethernet
TVS3V3L4U (Surge)
Keypad
RF Interfaces
NFC
ESD18VU1B
ESD0P2RF
Electronic
Equipment
e.g. mobile/
wireless/
portable devices,
consumer
& industrial units
ESD0P2RF
ESD0P1RF
GPS
ESD0P2RF
ESD0P1RF
Mobile TV
ESD0P2RF
ESD0P1RF
ESD0P2RF
ESD0P1RF
RPP Diode
Power Supply
USB Charger
57
WLAN
FM
RF and Protection Devices
Application Guide for Consumer Applications
12.2
Reverse Polarity Protection (RPP) Circuit
DC
GND
+Vs/
GND
GND
+Vs
+Vs
DC
GND/
+Vs
RPP Diodes
RPP
Diode
+Vs
GND
DC protected circuit
DC protected circuit
Prevents damage to the circuit
System works with reverse polarity
AF Schottky Diodes for RPP
Product1)
Application
Note
CT2)
[pF]
@VR
[V]
VF
[mV]
@IF
[mA]
VF
[mV]
@IF
[mA]
IR
[μA]
@VR
[V]
Package
BAS3005A-02V
-
10
5
260
10
450
500
< 300
30
SC79
BAS3005A-02LRH
-
10
5
260
10
450
500
15
5
TSLP-2-17
BAS3010A-03W
-
28
5
220
10
450
1000
< 200
30
SOD323
BAS3010S-02LRH
-
10
5
340
100
570
1000
30
10
TSLP-2-17
BAS3020B
-
30
5
350
1000
530
2000
40
30
SOT363
BAS4002S-02LRH
-
7
5
330
10
470
200
0.5
5
TSLP-2-17
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices.
AF Schottky Diodes for advanced RPP (system works also with reverse polarity)
Application
Note
CT2)
[pF]
@VR
[V]
VF
[mV]
@IF
[mA]
VF
[mV]
@IF
[mA]
IR
[μA]
@VR
[V]
Package
BAS4002A-RPP Q
-
2.2
5
390
10
550
100
<2
30
SOT143
BAS3007A-RPP Q
-
10
5
350
100
550
700
< 100
24
SOT143
Product1)
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices.
58
RF and Protection Devices
Application Guide for Consumer Applications
12.3
Reverse Polarity Protection for USB Charger
RPP
Diode
DC Adapter
USB
Charger
IC
USB Power
ICHG
SYSTEM
+
MOSFET
Battery
MOSFET
AF Schottky Diodes for RPP
Product1)
Application
Note
CT2)
[pF]
@VR
[V]
VF
[mV]
@IF
[mA]
VF
[mV]
@IF
[mA]
IR
[μA]
@VR
[V]
Package
BAS4002A-02LRH
-
7
5
330
10
470
200
0.5
5
TSLP-2-17
BAS3005A-02LRH
-
10
5
260
10
450
500
15
5
TSLP-2-17
BAS3010S-02LRH
-
10
5
340
100
570
1000
30
10
TSLP-2-17
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices.
59
RF and Protection Devices
Application Guide for Consumer Applications
12.4
Rectifier Circuit with Schottky Diodes
Bridge
Rectifier
AC
Power
Supply IC
DC
EMI/EMC filter
AF Schottky Diodes for Rectifier Circuit
Product1)
BGX50A
Application
Note
VR,max2)
[V]
IF,max3)
[mA]
VBR
[V]
IR
[μA]
@VR
[V]
VF
[V]
@IF
[mA]
τrr
[ns]
Package
D
-
50
140
50
< 0.2
50
< 1.3
100
< 6.0
SOT143
BAS4002A-RPP D
-
40
200
40
< 10
40
< 0.62
<2
-
SOT143
BAS3007A-RPP D
-
30
350
30
< 350
30
< 0.4
< 100
-
SOT143
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) Reverse voltage in maximum ratings;
3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices.
60
3) Forward current in maximum ratings;
RF and Protection Devices
Application Guide for Consumer Applications
12.5
Clipping and Clamping
Vs
After Filtering
Digital spikes
Discrete spike filter
RF Schottky Diodes for Clipping and Clamping
Product1)
Application
Note
CT2)
[pF]
@VR
[V]
VF
[mV]
@IF
[mA]
VF
[mV]
@IF
[mA]
IR
[μA]
@VR
[V]
Package
BAT54 series
-
< 10
1
< 320
1
< 800
100
<2
25
SOT23
SOT323
TSLP-2-7
SC79
BAT64 series
-
4
1
320
1
570
100
<2
25
SOT23
SOT323
SCD80
8
SOT23
SOT323
SOT343
SOT363
40
SOT23
SOT143
SOT323
SOT343
TSLP-2-1
70
SOT23
SOT143
SOT323
SOT343
SOT363
SCD80
TSLP-2-1
BAT68 series
BAS40 series
BAS70 series
Notes:
-
-
-
0.7
3
1,5
0
0
0
318
310
375
1
1
1
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices.
61
390
720
705
10
40
10
< 10
< 10
< 10
RF and Protection Devices
Application Guide for Consumer Applications
Abbreviations
Abbr.
Terms
Abbr.
Terms
Amp
Amplifier
NFC
Near Field Communication
AN
Application Note
OoB
Out of Band
ANT
Antenna
P2P
Point-to-Point
BB
Baseband
PA
Power Amplifier
BJT
Bipolar Junction Transistor
PC
Personal Computer
BPF
Band Pass Filter
PCB
Printed Circuit Board
BSF
Band Suppression Filter
PLL
Phase-Locked Loop
BT
Bluetooth
PND
Personal Navigation Devices
CATV
Cable TV
RF
Radio Frequency
CHG
Charge
RoHS
Restriction of Hazardous Substances
CMMB
Chinese Multimedia Mobile Broadcast
RPD
RF & Protection Devices
COMPASS
Chinese Navigation Satellite System BeiDou
RPP
Reverse Polarity Protection
DC
Direct Current
Rx
Receive
DECT
Digital Enhanced Cordless
Telecommunications
SAR
Search and Rescue
EDGE
Enhanced Data Rates for GSM Evolution
SAW
Surface Acoustic Wave
SC(D)
Semiconductor (Diode) Package
SD Card
Secure Digital Memory Card
SDARs
Satellite Digital Audio Radio Services
SIM Card
Subscriber Identity Module Card
SOD
Small Outline Diode Package
SOT
Small Outline Transistor Package
SWP
Single Wire Protocol
T-DAB
Terrestrial Digital Audio Broadcasting
T-DMB
Terrestrial Digital Multimedia Broadcast
EMI
Electromagnetic Interference
ESD
Electro-Static Discharge
FEM
Front-End Module
FM
Frequency Modulation (76 – 108 MHz)
FWLP
Fine Pitch Wafer Level Package
GLONASS
Global Orbiting Navigation Satellite System
GNSS
Global Navigation Satellite System
GPS
Global Positioning System (1575.42 MHz)
GSM
Global System for Mobile Communication
HDMI
High-Definition Multimedia Interface
TDS-CDMA
HEMT
High-Electron-Mobility Transistor
TDS-LTE
HG / LG
High-Gain / Low-Gain
IEC
International Electrotechnical Commission
IC
Integrated Circuit
IF
Intermediate Frequency
I/O
Input / Output
LCD
Liquid Crystal Display
LNA
Low Noise Amplifier
LNB
Low Noise Block
LO
Local Oscillator
LTE
Long-Term Evolution
LPF
Low Pass Filter
Mbps
Megabits per Second
MG
Middle Gain
MM Card
Multimedia Card
MMIC
Monolithic Microwave Integrated Circuit
MOSFET
Metal-Oxide-Semiconductor Field Effect
Transistor
62
Time Division-Synchronous Code Division
Multiple Access
Time Division-Synchronous Long-Term
Evolution
TRX
Transceiver
TSFP
Thin Small Flat Package
T(S)SLP
Thin (Super) Small Leadless Package
TSNP
Thin Small Non Leaded Package
TV
Television
TVS
Transient Voltage Suppression
Tx
Transmit
UHF
Ultra High Frequency (470 – 860MHz)
UMTS
Universal Mobile Telecommunications System
USB
Universal Serial Bus
VCO
Voltage Controlled Oscillator
VGA
Video Graphics Array
VHF
Very High Frequency (30 – 300MHz)
WDCT
Worldwide Digital Cordless Telecommunication
WiMAX
Worldwide Interoperability for Microwave Access
WLAN
Wireless Local Area Network
RF and Protection Devices
Application Guide for Consumer Applications
Alphanumerical List of Symbols
Symbol
Term
Unit
Af
Cdss
Cglss
flicker noise exponent
Output capacitance
Gate-1 input capacitance
[pF]
[pF]
CT
Total Diode capacitance
[pF]
ESD
Voltage of ESD pulse
[kV]
fc
Corner frequency of 1/f noise
[kHz]
fT
Transit frequency of transistor
[GHz]
gfs
Gma
Gms
GP
ID,max
Forward transconductance
Maximum available power gain
Maximum stable power gain
Power Gain
Maximum drain current
[ms]
[dB]
[dB]
[dB]
[mA]
IF
Forward current
[mA]
IR
Reserve current
[µA]
IPP
Maximum peak pulse current
[mA]
IIP3
Input 3rd intercept point
[dBm]
IL
Insertion loss
[dB]
IMD2
2nd order intermodulation distortion
[dBm]
IP-1dB
Input 1dB compression point
[dBm]
Kf
flicker noise constant
-
NF
Noise figure
[dB]
rd
OIP3
Output 3 intercept point
[dBm]
OP-1dB
Output 1dB compression point
[dBm]
P-0.1dB
0.1dB compression point
[dBm]
Pin,max
Maximum input power
[dBm]
Ptot,max
Maximum total power dissipation
[mW]
Rdyn
Dynamic Resistance
[Ω]
rF
Differential forward resistance
[Ω]
VBR
Breakdown voltage
[V]
VCL
Clamping voltage
[V]
Vctrl
Digital control voltage
[V]
Vdd
DC supply voltage
[V]
VF
Forward voltage
[mV]
VR
Reverse voltage
[V]
VRWM
Reverse working voltage
[V]
τL
Storage time
[ns]
τrr
Reverse recovery time
[ns]
63
RF and Protection Devices
Application Guide for Consumer Applications
Package Information
Package (JEITA-code)
X
L×W×H
PIN-Count
Scale 1:1
All products are available in green (RoHS compliant).
All Dimensions in mm
SC79 (SC-79)
2
1.6 × 0.8 × 0.55
2
1.7 × 0.8 × 0.7
3:1
3
2.0 × 2.1 × 0.9
4
2.0 × 2.1 × 0.9
4
7
3:1
11
6
6:1
TSNP-16-3
2.5 × 2.5 × 0.73
2:1
16
2.3 × 2.3 × 0.73
2:1
64
3
1.4 × 1.2 × 0.55
4:1
TSLP-3-9 ( - )
1.0 × 0.6 × 0.39
3
1.0 × 0.6 × 0.31
5:1
5:1
7
TSLP-7-4 ( - )
2.0 × 1.3 × 0.4
7
2.3 × 1.5 × 0.4
3:1
3:1
TSNP-7-10
TSNP-7-6
0.778×0.528×0.34
3:1
TSNP-11-2
2
FWLP-6-1
1.4 × 1.26 × 0.31
1.2 × 1.2 × 0.55
4:1
TSLP-7-8 ( - )
1.4 × 1.26 × 0.39
TSFP-4 ( - )
TSLP-7-1 ( - )
1.1 × 0.7 × 0.4
4:1
TSLP-7-6 ( - )
7
6
2:1
TSLP-2-17
1.0 × 0.6 × 0.39
2.9 × 2.4 × 1.0
4:1
TSLP-6-2
1.2 × 0.8 × 0.39
4:1
3
5:1
TSLP-4-7 ( - )
1.2 × 0.6 × 0.4
4
TSFP-3 ( - )
2.0 × 2.1 × 0.9
7:1
TSLP-4-4 ( - )
2.9 × 2.4 × 1.1
3:1
2
SOT143 (SC-61)
2:1
TSLP-2-7 ( - )
0.62 × 0.32 × 0.31
5:1
4
6
TSSLP-2-1 ( - )
2
3
SOT363 (SC-88)
3:1
TSLP-2-1 ( - )
1.0 × 0.6 × 0.4
2.5 × 1.25 × 0.9
2:1
SOT343 (SC-82)
3:1
2
2
3:1
SOT323 (SC-70)
SOT23 ( - )
SOD323 (SC-76)
SCD80 (SC-80)
7
1.4 × 1.26 × 0.39
3:1
7
2.3 × 1.7 × 0.73
3:1
RF and Protection Devices
Application Guide for Consumer Applications
Support Material
Data Sheets / Application Notes / Technical Reports
www.infineon.com/rfandprotectiondevices
Products:
- RF CMOS Switches
www.infineon.com/rfswitches
- RF MMICs
www.infineon.com/rfmmics
- RF Transistors
www.infineon.com/rftransistors
- RF Diodes
www.infineon.com/rfdiodes
- PIN Diodes
www.infineon.com/pindiodes
- Schottky Diodes
www.infineon.com/schottkydiodes
- Varactor Diodes
www.infineon.com/varactordiodes
- ESD/EMI Protection Devices
www.infineon.com/tvsdiodes
Brochures:
- Selection Guide
www.infineon.com/rpd_selectionguide
- Application Guide for Protection
www.infineon.com/rpd_appguide_protection
- Application Guide for Consumer Applications
www.infineon.com/rpd_appguide_consumer
- Application Guide for Industrial Applications
www.infineon.com/rpd_appguide_industrial
- ESD Protection Solutions – Consumer and Wireless
Communication
www.infineon.com/tvs.brochure
- GPS Front-End Components for Mobile and Wireless
Applications
www.infineon.com/gps
Sample Kits
www.infineon.com/rpdkits
Evaluation Boards
For more information please contact your sales counterpart at
Infineon.
65