A pp li c at i on N ot e , R ev . 2. 0 , N ov . 2 00 6 A p p li c a t i o n N o t e N o . 0 2 6 A M e d i u m - P o w e r - A m pl i f i e r a t 1 . 9 G H z u s i n g B FP 4 50 R F & P r o t e c ti o n D e v i c e s Edition 2006-11-14 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2009. All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. 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Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Application Note No. 026 A Medium-Power-Amplifier at 1.9 GHz using BFP450 Revision History: 2006-11-14, Rev. 2.0 Previous Version: 2000-07-28 Page Subjects (major changes since last revision) All Document layout change Trademarks SIEGET® is a registered trademark of Infineon Technologies AG. Application Note 3 Rev. 2.0, 2006-11-14 Application Note No. 026 A Medium-Power-Amplifier at 1.9 GHz using BFP450 1 A Medium-Power-Amplifier at 1.9 GHz using BFP450 This application note provides general information, print layout and list of used components, circuit layout and measured data of a medium power amplifier at 1.9 GHz using Siemens SIEGET®25 BFP450. The emphasis has been on high OIP3-values. Data at 1.9 GHz (3 V and 68 mA) Gain: 13.5 dB IP3out: NF: 30 dBm 12.7 dB RLin-out >10 dB +3V C5=100pF C6=10nF R1=10 Ohm C4=33pF R2=1.8k TrL4 C2=1.2pF C3=10pF RFout R3=33 C1=0.8pF TrL1 TrL3 RFin Tr1=BFP450 TrL2 AN026_Application.vsd Figure 1 Application This amplifier at 1.9 GHz has been realized by using microstrip lines for matching purposes. It offers a good compromise between high gain and high OIP3 -values. For optimizing and improving the circuit please observe the following abstract: • • • • The layout size can be reduced by using chip-coils instead of the microstrip lines TrL2 and TrL3. Improved stabilization behaviour versus temperature and a reduction of current gain distribution problems can be optained if you add a Infineon actived bias controller BCR400W. This is easily achieved by replacing collector resistor R1 and by adding two capacitors. For further information please refer to application note No.014. The resistors R1 and R3 are however, sufficient in most applications for stabilization purposes. The measured figures include losses of SMA-connectors and the relatively high loss of the microstrip lines on the epoxy board. Resistor R3 is used to get higher circuit-stability at low frequencies. Application Note 4 Rev. 2.0, 2006-11-14 Application Note No. 026 A Medium-Power-Amplifier at 1.9 GHz using BFP450 scale 1:1 dim.: 41mm x 28mm 100pF 10pF 10nF 10 Ohm 33 Ohm 1.8kOhm plated thru holes 33pF 1.2pF 0.8pF BFP450 AN026_PCB_Layout.vsd Figure 2 Layout and Component Placement Application Note 5 Rev. 2.0, 2006-11-14 Application Note No. 026 A Medium-Power-Amplifier at 1.9 GHz using BFP450 Table 1 Component Component Value Unit Comment R1 10 Ω Bias / collector-resistance / VR1 ≅ 0.7 V 0603 R2 1.8 kΩ Bias 0603 R3 33 Ω To improve AF-stability 0603 C1 0.8 pF Input match 0603 C2 1.2 pF Output match 0603 C3 10 pF RF-short 0603 C4 33 pF RF-short 0603 C5 100 pF RF-short 0603 C6 10 nF RF-short 0603 Tr1 SIEGET® BFP450 SOT343 TrL1 Input match, w = 0.3 mm TrL2 Input match, w = 1.9 mm TrL3 Input match, w = 1.9 mm TrL4 Output match, w = 0.3 mm Substrate Application Note h = 1 mm, εr = 4.5 FR4 6 Rev. 2.0, 2006-11-14 Application Note No. 026 A Medium-Power-Amplifier at 1.9 GHz using BFP450 Measured data S21 LOG MAG. S12 10.000 dB/DIV LOG MAG. 10.000 dB/DIV 1 1 0.040000 S11 3.000000 GHz LOG MAG. 0.040000 S22 10.000 dB/DIV GHz 3.000000 LOG MAG. 10.000 dB/DIV 1 1 0.040000 1 GHz 3.000000 0.040000 GHz 3.000000 1.9 GHz AN026_M easured_data.vsd Figure 3 Measured data Application Note 7 Rev. 2.0, 2006-11-14