BGA711N7 for LTE Applications supporting Band 1,4,10

B GA 711 N 7
B GA 711 N 7 fo r LT E Applic atio ns
Sup por tin g B and 1, 4,10
with R efe r ence Res i s tor Rr ef= 27 k Ω
Applic atio n N ote A N 345
Revision: Rev. 1.0
2013-09-10
RF and P r otecti on D evic es
Edition 2013-09-10
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
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BGA711N7
BGA711N7 for LTE Applications Supporting Band
Application Note AN2XX
Revision History: 2013-09-10
Previous Revision:
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Subjects (major changes since last revision)
Trademarks of Infineon Technologies AG
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CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
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ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™,
TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by
AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum.
COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™
of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium.
HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™
of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR
STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc.
MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS
Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of
Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems
Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc.
SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software
Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc.
TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™
of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™
of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited.
Last Trademarks Update 2011-11-11
Application Note AN2XX, Rev. 1.0
3 / 23
2013-09-10
BGA711N7
BGA711N7 for LTE Applications Supporting Band
List of Content, Figures and Tables
Table of Content
1
Introduction ........................................................................................................................................ 5
2
Infineon LNA BGA711N7 for 3G and Beyond ................................................................................ 10
3
Description ........................................................................................................................................ 11
4
Application Information ................................................................................................................... 13
5
Typical Measurement Results ......................................................................................................... 14
6
Measured Graphs ............................................................................................................................. 15
7
Evaluation Board and Layout Information .................................................................................... 21
8
Authors .............................................................................................................................................. 22
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Figure 12
Figure 13
Figure 14
Figure 15
Figure 16
Example of Application Diagram of a 3-band RF front-end for 3G and 4G systems. .......................... 7
BGA711N7 in TSNP-7-1 Package ..................................................................................................... 10
Block diagram and pin assignment of BGA711N7 (topview) ............................................................. 12
Schematics of the application circuit of BGA711N7 for Band 1,4 and 10 .......................................... 13
Wideband Insertion Power Gain of BGA BGA711N7 with Rref= 27 kΩ ............................................ 15
Narrowband Insertion Power Gain of BGA BGA711N7 in Band 1,4,10 with Rref= 27 kΩ ................ 15
Measured Noise Figure of BGA711N7 for High Gain Mode in Band 1,4,10 with Rref= 27 kΩ .......... 16
Reverse Isolation of BGA711N7 in Band 1,4,10 with Rref= 27 kΩ .................................................... 16
Input return loss of BGA711N7 in Band 1,4,10 with Rref= 27 kΩ ...................................................... 17
Output return loss of BGA711N7 in Band 1,4,10 with Rref= 27 kΩ ................................................... 17
Input 1dB compression point of BGA711N7 in High Gain Mode (2140MHz) with Rref= 27 kΩ ........ 18
Carrier and intermodulation products of BGA711N7 in High Gain Mode with Rref= 27 kΩ .............. 19
Stability factors of BGA711N7 for High Gain Mode in Band 1,4,10 with Rref= 27 kΩ ....................... 20
Stability factors of BGA711N7 for Low Gain Mode in Band 1,4,10 with Rref= 27 kΩ........................ 20
Evaluation board for Band 1,4 and 10 Application circuit .................................................................. 21
PCB Layer Information of BGA711N7 evaluation boards .................................................................. 21
List of Tables
Table 1
Table 2
Table 3
Table 4
Table 5
Table 6
Table 7
UMTS/WCDMA Band Assignment ....................................................................................................... 5
LTE Band Assignment ......................................................................................................................... 6
Infineon Product Portfolio of LNAs for 3G and 4G Applications .......................................................... 9
Pin Assignment of BGA711N7 ........................................................................................................... 12
Gain Control Truth Table(Vcc=2.8V) .................................................................................................. 12
Bill-of-Materials of Band 1,4 and 10 ................................................................................................... 13
Electrical Characteristics Band 1,4 and 10 (at room temperature) .................................................... 14
Application Note AN2XX, Rev. 1.0
4 / 23
2013-09-10
BGA711N7
BGA711N7 for LTE Applications Supporting Band 1,4,10 and 2
Introduction
1
Introduction
1.1
About 3G and 4G Applications
Recently, demand for wireless data service is growing faster than ever before. Starting from
the first 3G technology, Universal Mobile Telecommunications System (UMTS), also known
as Wideband Code Division Multiple Access (WCDMA) to the 3.5G technologies, High Speed
Downlink Packet Access (HSDPA), High Speed Uplink Packet Access (HSUPA), and the
combined technology HSPA and HSPA+, the wireless data rate through mobile phone
networks increase dramatically. Ever since the rollout of HSDPA networks and flat-rate
pricing plans, the wireless industry has seen amazing growth in mobile broadband average
revenue per user.
Since middle 2009, further enhancements of the HSPA technology, defines a new OFDMAbased technology through the Long Term Evolution (LTE) start to ramp in the market. The
ability of LTE to support bandwidths up to 20MHz and to have more spectral efficiency by
using better modulation methods like QAM-64, is of particular importance as the demand for
higher wireless data speeds continues to grow fast.
Countries all over the world have released various frequencies bands for the 3G and 4G
applications. Table 1 and Table 2 show the band assignment for the UMTS and LTE bands
worldwide.
Table 1
Band No.
UMTS/WCDMA Band Assignment
Uplink Frequencies (TX)
Downlink Frequencies (RX)
1
1920 - 1980 MHz
2110 - 2170 MHz
2
1850 - 1910 MHz
1930 - 1990 MHz
2 (G)
1850 - 1915 MHz
1930 - 1995 MHz
2 (H)
1850 - 1920 MHz
1930 - 2000 MHz
3
1710 - 1785 MHz
1805 - 1880 MHz
4
1710 - 1755 MHz
2110 - 2155 MHz
5
824 - 849 MHz
869 - 894 MHz
6
830 -840 MHz
875 - 885 MHz
7
2500 - 2570 MHz
2620 - 2690 MHz
8
880 - 915 MHz
925 - 960 MHz
Application Note AN2XX, Rev. 1.0
5 / 23
Comment
2013-09-10
BGA711N7
BGA711N7 for LTE Applications Supporting Band 1,4,10 and 2
Introduction
Table 2
Band No.
LTE Band Assignment
Uplink Frequency Range
Downlink Frequency Range
1
1920 - 1980 MHz
2110 - 2170 MHz
2
1850 - 1910 MHz
1930 - 1990 MHz
3
1710 - 1785 MHz
1805 - 1880 MHz
4
1710 - 1755 MHz
2110 - 2155 MHz
5
824 - 849 MHz
869 - 894 MHz
6
830 - 840 MHz
875 - 885 MHz
7
2500 - 2570 MHz
2620 - 2690 MHz
8
880 - 915 MHz
925 - 960 MHz
9
1749.9 - 1784.9 MHz
1844.9 - 1879.9 MHz
10
1710 - 1770 MHz
2110 - 2170 MHz
11
1427.9 - 1452.9 MHz
1475.9 - 1500.9 MHz
12
698 - 716 MHz
728 - 746 MHz
13
777 - 787 MHz
746 - 756 MHz
14
788 - 798 MHz
758 - 768 MHz
17
704 - 716 MHz
734 - 746 MHz
18
815 - 830 MHz
860 - 875 MHz
19
830 - 845 MHz
875 - 890 MHz
20
832 - 862 MHz
791 - 821 MHz
21
1447.9 - 1462.9 MHz
1495.9 - 1510.9 MHz
33
1900 -1920 MHz
1900 -1920 MHz
34
2010 - 2025 MHz
2010 - 2025 MHz
35
1850 - 1910 MHz
1850 - 1910 MHz
36
1930 - 1990 MHz
1930 - 1990 MHz
37
1910 - 1930 MHz
1910 - 1930 MHz
38
2570 - 2620 MHz
2570 - 2620 MHz
39
1880 - 1920 MHz
1880 - 1920 MHz
40
2300 - 2400 MHz
2300 - 2400 MHz
Comment
In order to cover different countries with a unique device, mobile phones and 3G data cards
are usually equipped with more than one band. Some typical examples are the triple band
combination of band 1, 2 and 5 or quad band combination of band 1, 2, 5 and 8. Since last
year, some 700MHz bands are released in the US, so that band combination like 4, 13 and
17 are also well visible in the market.
Application Note AN2XX, Rev. 1.0
6 / 23
2013-09-10
BGA711N7
BGA711N7 for LTE Applications Supporting Band 1,4,10 and 2
Introduction
1.2
Applications
Figure 1 shows an example of the block diagram of the front-end of a 3G modem. A SPnT
switch connects on one side the modem antenna and on the other sides several duplexers
for different 3G bands. Every duplexer is connected to the transmitting (TX) and receiving
(RX) paths of each band. The external LNA, here for example BGA735N16, is placed on the
RX path between the duplex and the bandpass SAW filter. The output of the SAW filter is
connected to the receiver input of the transceiver IC.
Depending on the number of bands designed in a device, various numbers of LNAs are
required in a system. It can be 1-, 2-, 3-, or 4-bands. Recently, even mobile devices with 10
bands are under discussion.
CMOS Antenna
Switch Module
GSM/
EDGE
BGSF18A/D
…
PA
Duplexer
3G/3.5G
3G/3.5G
Power
Detection Diodes
BAT15x BAT68x
BAT62x BAS70x
BPF
3G/3.5G
Transceiver
GSM/EDGE Front-End
UMTS
LTE
3G/3.5G/4G LNA Family
1-Band: BGA711L7, BGA751L7, BGA777L7, BGA728L7
BGA713L7
3-Band: BGA735N16, BGA734L16, BGA736L16
4-Band: BGA748N16, BGA747N16, BGA749N16
Figure 1
Example of Application Diagram of a 3-band RF front-end for 3G and 4G systems.
Besides low noise amplifiers, Infineon Technologies also offers system designers solutions
for high power highly linear antenna switches as well as power detection diodes for power
amplifiers.
Application Note AN2XX, Rev. 1.0
7 / 23
2013-09-10
BGA711N7
BGA711N7 for LTE Applications Supporting Band 1,4,10 and 2
Introduction
1.3
Infineon LNAs for 3G and 4G Applications
With the increasing wireless data speed and with the extended link distance of mobile
phones and 3G data cards, the requirements on the sensitivity are much higher. Infineon
offers different kind of low noise amplifiers (LNAs) to support the customers for mobile
phones and data cards of 3G and 4G to improve their system performance to meet the
requirements coming from the networks/service providers.
The benefits to use external LNAs in equipment for 3G and 4G applications are:
- Flexible design to place the front-end components: due to the size constraint, the modem
antenna and the front-end can not be always put close to the transceiver IC. The path loss
in front of the integrated LNA on the transceiver IC increases the system noise figure
noticeably. An external LNA physically close to the ANT can help to eliminate the path loss
and reduce the system noise figure. Therefore the sensitivity can be improved by several dB.
- Boost the sensitivity by reducing the system noise figure: external LNA has lower noise
figure than the integrated LNA on the transceiver IC.
- Bug fix to help the transceiver ICs to fulfill the system requirements.
- Increase the dynamic range of the power handling.
Infineon Technologies is the leading company with broad product portfolio to offer high
performance SiGe:C bipolar transistor LNAs and MMIC LNAs for various wireless
applications by using the industrial standard silicon process.
- Single-band LNAs like BGA711N7 for high-band (HB, 1700MHz-2300MHz), BGA777N7 for
high-band (2300MHz-2700MHz) or BGA751N7 for low-band (LB, 700-1000MHz) are
available. BGA713N7 is designed for the special LTE bands 12, 13, 14, 17, 18, 19 and 20 in
the US.
- Triple-band LNAs BGA734N16, BGA735N16 and BGA736N16 are available to cover the
most bands. All of the three triple-band LNAs can support designs covering 2x high-bands
and 1x low-band.
- Both BGA748N16 and BGA749N16 are quad-band LNAs. BGA748N16 can cover 2x highand 2x low-bands and BGA749N16 can cover 1x high-band and 3x low-bands. All of these
quad-bands LNAs can support all designs with 3 to 4 bands.
Application Note AN2XX, Rev. 1.0
8 / 23
2013-09-10
BGA711N7
BGA711N7 for LTE Applications Supporting Band 1,4,10 and 2
Introduction
The broad product portfolio with highest integration and best features in noise figure,
switchable gain level and flexible band selection helps designers of mobile phones and data
cards to achieve outstanding performance. Therefore Infineon LNAs are widely used by
major mobile phone vendors.
Table 3
Infineon Product Portfolio of LNAs for 3G and 4G Applications
Frequency Range
700 MHz – 1 GHz
1400MHz – 2200MHz 2100 MHz – 2700 MHz
Comment
Single-Band LNA
BGA711N7
BGA751N7
x
x
BGA777N7
BGA728L7
x
x
x
BGA713N7
Dual Band LNA
x
BGA771N16
Triple Band LNA
x
x
BGA734L16
x
x
x
BGA735N16
x
x
x
BGA736N16
Quad-band LNA
x
x
x
BGA748N16
x
x
x
BGA749N16
x
x
x
Application Note AN2XX, Rev. 1.0
9 / 23
2013-09-10
BGA711N7
BGA711N7 for LTE Applications Supporting Band 1,4,10 and 2
Infineon LNA BGA711N7 for 3G and Beyond
2
Infineon LNA BGA711N7 for 3G and Beyond
This application note focuses on the Infineon’s Single-band LNA BGA711N7 tuned for
Band1,4 and10. It presents the performance of BGA711N7 with an external reference
resistor of 27 kΩ which enables the device to work with a current of 3.8 mA at single supply
voltage of 2.8 V. All the measurements are executed with the standard evaluation board
presented at the end of this application note.
2.1
Features of BGA711N7
• High
gain and low gain modes
• Low noise figure
• Tunable supply current with external Rref
• Standby mode (< 2 µA typ.)
• Output internally matched to 50 Ω.
• Inputs pre-matched to 50 Ω.
• 2 kV HBM ESD protection
• Low external component count
• Small leadless TSNP-7-1 package (2.0 x 1.3 x 0.39
mm)
• Pb-free (RoHS compliant) device
Application Note AN2XX, Rev. 1.0
10 / 23
Figure 2
BGA711N7 in TSNP-7-1
Package
2013-09-10
BGA711N7
BGA711N7 for LTE Applications Supporting Band 1,4,10 and 2
Description
3
Description
Figure 3 shows the internal block diagram of BGA711N7 with the topview of the TSNP-7-1
and the pin assignment. Table 4 is the pin assignment of BGA711N7 with the description of
their functions accordingly. As shown in the block diagram, BGA711N7 includes the LNA
which can be switched to the high-gain and the low-gain mode. The gain switch can be easily
done by switching the VGS pin to Vcc (high-gain mode) or 0 V (low-gain mode).
Furthermore, the following functions are integrated into BGA711N7:
- Smart active biasing circuit: to enable the circuit performance over temperature and supply
Voltage variation
- Output matching circuits for the standard bands (Band 7 in this case)
- Current setting with only one external resistor Rref.
- On/off switch of the whole device with one single pin VON (Table 5)
- All the digital control pins VEN and VGS are CMOS 2.8V logic compliant
- ESD protection circuit all around the device for 2kV HBM
The RF input pins of the LNAs are connected directly with the base of the major SiGe:C RF
transistors to achieve the best noise figure performance. In addition, the input and the output
matching circuits can be tuned to different bands if required.
Application Note AN2XX, Rev. 1.0
11 / 23
2013-09-10
BGA711N7
BGA711N7 for LTE Applications Supporting Band 1,4,10 and 2
Figure 3
Table 4
Block diagram and pin assignment of BGA711N7 (topview)
Pin Assignment of BGA711N7
Pin No.
Symbol
Function
1
RFIN
LNA input
2
VEN
Band select control
3
VGS
Gain step control (High Gain / Low Gain Mode)
4
VCC
Supply Voltage
5
6
RREF
RFOUT
Bias current reference resistor
LNA output
Table 5
Gain Control Truth Table(Vcc=2.8V)
Pin control
High Gain
Low Gain
VEN
H
H
L
L
VGS
H
L
H
L
Application Note AN2XX, Rev. 1.0
12 / 23
Stand-by
2013-09-10
BGA711N7
BGA711N7 for LTE Applications Supporting Band 1,4,10 and 2
Application Information
4
Application Information
4.1
Schematic of Band 1,4 and 10
Figure 4
Schematics of the application circuit of BGA711N7 for Band 1,4 and 10
Table 6
Bill-of-Materials of Band 1,4 and 10
Symbol
Value
Unit
Size
Manufacturer
Comment
C1
10
pF
0402
Murata GRM15
Input matching / DC block
L1
2.0
nH
0402
Murata LQW15A
Input matching
C2
100
pF
0402
Murata GRM15
DC block
C3
10
nF
0402
Murata GRM15
HF to ground
RREF
27
kΩ
0402
Various
Current settings
Q1
BGA711N7
TSNP-7-1
Infineon
SiGe MMIC LNA
Application Note AN2XX, Rev. 1.0
13 / 23
2013-09-10
BGA711N7
BGA711N7 for LTE Applications Supporting Band 1,4,10 and 2
Typical Measurement Results
5
Typical Measurement Results
5.1
Results of Band 1,4 and 10
Table 7
Electrical Characteristics Band 1,4 and 10 (at room temperature)
VGS=0V for low gain mode, VGS=2.8V for high gain mode
Parameter
Symbol
Value
Unit
Frequency Range Band-1
Freq
2110 - 2170
MHz
Frequency Range Band-4
Freq
2110 - 2155
MHz
Frequency Range Band-10
Freq
2110 - 2170
MHz
DC Supply Voltage
Vcc
2.8
V
Gain Mode
-
High Gain Low Gain
DC Current
Icc
3.6
0.5
mA
Gain
G
17.2
-8.3
dB
Noise Figure
NF
1.2
8.3
dB
Input Return Loss
RLin
11
10
dB
Output Return Loss
RLout
13
18
dB
Reverse Isolation
IRev
36.5
8.3
dB
Input P1dB
IP1dB
-7.8
-
dBm
Output P1dB
OP1dB
8.4
-
dBm
Input IP3
IIP3
-3.5
-
dBm
F1=2.0995GHz, F2=2.1005GHz
Output IP3
OIP3
18.8
--
dBm
[email protected]: -30 dBm
Δf =1MHz
Stability
k
--
Stability measured upto 8.5 GHz
Application Note AN2XX, Rev. 1.0
>1
14 / 23
Comment/Test Condition
SMA and PCB losses of 0.1 dB
excluded
Measured @ 2100 MHz
2013-09-10
BGA711N7
BGA711N7 for LTE Applications Supporting Band 1,4,10 and 2
Typical Measurement Results
6 Measured Graphs
Figure 5
Wideband Insertion Power Gain of BGA711N7 with Rref= 27 kΩ
Figure 6
Narrowband Insertion Power Gain of BGA711N7 in Band 1,4,10 with Rref= 27 kΩ
Application Note AN2XX, Rev. 1.0
15 / 23
2013-09-10
BGA711N7
BGA711N7 for LTE Applications Supporting Band 1,4,10 and 2
Typical Measurement Results
Figure 7
Measured Noise Figure of BGA711N7 for High Gain Mode in Band 1,4,10 with Rref= 27 kΩ
Figure 8
Reverse Isolation of BGA711N7 in Band 1,4,10 with Rref= 27 kΩ
Application Note AN2XX, Rev. 1.0
16 / 23
2013-09-10
BGA711N7
BGA711N7 for LTE Applications Supporting Band 1,4,10 and 2
Typical Measurement Results
Figure 9
Input return loss of BGA711N7 in Band 1,4,10 with Rref= 27 kΩ
Figure 10
Output return loss of BGA711N7 in Band 1,4,10 with Rref= 27 kΩ
Application Note AN2XX, Rev. 1.0
17 / 23
2013-09-10
BGA711N7
BGA711N7 for LTE Applications Supporting Band 1,4,10 and 2
Typical Measurement Results
Figure 11
Input 1dB compression point of BGA711N7 in High Gain Mode (2140MHz) with Rref= 27 kΩ
Application Note AN2XX, Rev. 1.0
18 / 23
2013-09-10
BGA711N7
BGA711N7 for LTE Applications Supporting Band 1,4,10 and 2
Typical Measurement Results
Figure 12
Carrier and intermodulation products of BGA711N7 in High Gain Mode with Rref= 27 kΩ
Application Note AN2XX, Rev. 1.0
19 / 23
2013-09-10
BGA711N7
BGA711N7 for LTE Applications Supporting Band 1,4,10 and 2
Typical Measurement Results
Figure 13
Stability factors of BGA711N7 for High Gain Mode in Band 1,4,10 with Rref= 27 kΩ
Figure 14
Stability factors of BGA711N7 for Low Gain Mode in Band 1,4,10 with Rref= 27 kΩ
Application Note AN2XX, Rev. 1.0
20 / 23
2013-09-10
BGA711N7
BGA711N7 for LTE Applications Supporting Band 1,4,10 and 2
Typical Measurement Results
7
Evaluation Board and Layout Information
Figure 15
Evaluation board for Band 1,4 and 10 Application circuit
Figure 16
PCB Layer Information of BGA711N7 evaluation boards
Application Note AN2XX, Rev. 1.0
21 / 23
2013-09-10
BGA711N7
BGA711N7 for LTE Applications Supporting Band 1,4,10 and 2
Authors
8
Authors
Edwin Guo, Senior Application Engineer of Business Unit “RF and Protection Devices”
Islam Moakhkhrul, Application Engineer of Business Unit “RF and Protection Devices”
----------------------------------------
Application Note AN2XX, Rev. 1.0
22 / 23
2013-09-10
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
AN2XX