B GA 925L 6 IMD Pe rfo rmanc e of B GA 925 L 6 wi th Diff ere nt Applic atio n Ci rc uits unde r Speci fic T est Con dit ions Applic atio n N ote A N 272 Revision: Rev. 1.0 2011-08-11 RF and P r otecti on D evic es Edition 2011-09-16 Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. 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Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA925L6 Highly Linear LNA for GPS/GLONASS/Galileo/COMPASS Application Note AN272 Revision History: 2011-08-11 Previous Revision: None Page Subjects (major changes since last revision) Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-02-24 Application Note AN272, Rev. 1.0 3 / 24 2011-08-11 BGA925L6 Highly Linear LNA for GPS/GLONASS/Galileo/COMPASS Table of Content, List of Figures and Tables Table of Content 1 BGA925L6 GPS Front-End LNA for High Performance Integrated Solution ................................ 6 2 Introduction ........................................................................................................................................ 7 3 Application Circuits ........................................................................................................................... 9 4 Typical Measurement Results ......................................................................................................... 10 5 Measured Graphs for different application circuits of BGA925L6 .............................................. 13 6 Miscellaneous Measured Graphs ................................................................................................... 20 7 Evaluation Boards ............................................................................................................................ 22 8 Authors .............................................................................................................................................. 23 Application Note AN272, Rev. 1.0 4 / 24 2011-08-11 BGA925L6 Highly Linear LNA for GPS/GLONASS/Galileo/COMPASS Table of Content, List of Figures and Tables List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Figure 19 Figure 20 BGA925L6 in TSLP-6-2 Package (0.70mm x 1.1mm x 0.40mm) ........................................................ 6 Block diagram of the BGA925L6 for GNSS band 1559-1615MHz applications .................................. 8 Wideband power gain of different application circuits at supply voltage of 1.8V ............................... 13 Wideband power gain of different application circuits at supply voltage of 2.8V ............................... 13 Narrowband power gain of different application circuits at supply voltage of 1.8V ............................ 14 Narrowband power gain of different application circuits at supply voltage of 2.8V ............................ 14 Input matching of different application circuits at supply voltage of 1.8V .......................................... 15 Input matching of different application circuits at supply voltage of 2.8V .......................................... 15 Output matching of different application circuits at supply voltage of 1.8V........................................ 16 Output matching of different application circuits at supply voltage of 2.8V........................................ 16 Reverse isolation of different application circuits at supply voltage of 1.8V ...................................... 17 Reverse isolation of different application circuits at supply voltage of 2.8V ...................................... 17 Input 1dB compression point of different application circuits at supply voltage of 1.8V .................... 18 Input 1dB compression point of different application circuits at supply voltage of 2.8V .................... 18 Noise figure of different application circuits at supply voltage of 1.8V ............................................... 19 Noise figure of different application circuits at supply voltage of 2.8V ............................................... 19 Input matching of different application circuits at supply voltage of 1.8V .......................................... 20 Input matching of different application circuits at supply voltage of 2.8V .......................................... 20 Output matching of different application circuits at supply voltage of 1.8V........................................ 21 Output matching of different application circuits at supply voltage of 2.8V........................................ 21 List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 8 Pin Definition ........................................................................................................................................ 8 Switching Mode .................................................................................................................................... 8 Schematic diagram of various application circuits based around BGA925L6 ..................................... 9 Electrical Characteristics (at room temperature), Vcc = Vpon = 1.8 V .............................................. 10 Electrical Characteristics (at room temperature), Vcc = Vpon = 2.8 V .............................................. 11 IMD comparison of different Application Circuits at Vcc=1.8V ........................................................... 12 IMD comparison of different Application Circuits at Vcc=2.8V ........................................................... 12 PCBs for different application circuits under consideration ............................................................... 22 Application Note AN272, Rev. 1.0 5 / 24 2011-08-11 BGA925L6 Highly Linear LNA for GPS/GLONASS/Galileo/COMPASS BGA925L6 GPS Front-End LNA for High Performance Integrated Solution 1 BGA925L6 GPS Front-End LNA for High Performance Integrated Solution 1.1 Features • High gain: 15.8 dB • High out-of-band input 3rd-order intercept point: +7 dBm • High input 1dB compression point: -5 dBm • Low noise figure: 0.65 dB • Low current consumption: 4.8 mA • Operating frequency: 1550-1615 MHz • Supply voltage: 1.5 V to 3.6 V • Digital on/off switch (1V logic high level) • Ultra small TSLP-6-2 leadless package • Package dimensions: 0.70mm x 1.1mm x 0.40mm • B7HF Silicon Germanium technology • RF output internally matched to 50 Ω • Only two external SMD components necessary • 2 kV HBM ESD protection (including AI-pin) • Pb-free (RoHS compliant) package Figure 1 BGA925L6 in TSLP-6-2 Package (0.70mm x 1.1mm x 0.40mm) 1.2 Applications - Global Positioning System (GPS) - GLONASS (Russian GNSS) - Galileo (European GNSS) - COMPASS (Chinese Beidou Navigation System) Application Note AN272, Rev. 1.0 6 / 24 2011-08-11 BGA925L6 Highly Linear LNA for GPS/GLONASS/Galileo/COMPASS Introduction 2 Introduction The BGA925L6 is a front-end Low Noise Amplifier (LNA) for Global Navigation Satellite Systems (GNSS) application. It is based on Infineon Technologies’ B7HF Silicon-Germanium (SiGe:C) technology, enabling a cost-effective solution in a ultra small TSLP-6-2 package with ultra low noise figure, high gain, high linearity and low current consumption over a wide range of supply voltages from 3.6 V down to 1.5 V. All these features make BGA925L6 an excellent choice for GNSS LNA as it improves sensitivity, provide greater immunity against out-of-band jammer signals, reduces filtering requirement and hence the overall cost of the GNSS receiver. The ever growing demand to integrate more and more functionality into one device leads to many challenges when transmitter/receiver has to work simultaneously without degrading the performance of each other. In today’s smart-phones a GNSS receiver simultaneously coexists with transceivers in the GSM/EDGE/UMTS/LTE bands. These 3G/4G transceivers transmit high power in the range of +24 dBm which due to insufficient isolation couple to the GNSS receiver. The cellular signals can mix to produce Intermodulation products exactly in the GNSS receiver frequency band. In this application note, different application circuits based around BGA925L6 have been considered and compared taking into account their IMD performance under special test cases. BGA925L6 can also be preceded with any external pre-filter by adding necessary components required for optimal performance but in this specific application the SAW filter of Infineon’s BGM1033N7 module has been used. Table 3 show different application circuits designed to optimize noise figure, matching and increased rejection of jammer signals. The SAW filter used here has insertion loss of around 1dB and high out-of-band rejection. In special cases an additional notch can be added to suppress a specific jammer. In all the application circuits defined in Table 3, an additional “notch” has been added to suppress LTE band-13 jammer signal since its 2nd harmonic falls into GPS band. The component values for the notch are then fine tuned so as to have optimal noise figure, LTE band-13 rejection, gain and input matching. Application Note AN272, Rev. 1.0 7 / 24 2011-08-11 BGA925L6 Highly Linear LNA for GPS/GLONASS/Galileo/COMPASS Introduction The Internal circuit diagram of the BGA925L6 is presented in Figure 2. Table 1 shows the pin assignment of BGA925L6. Table 2 shows the truth table to turn on/off BGA925L6 by applying different voltage to the PON pin. Figure 2 Table 1 Pin Block diagram of the BGA925L6 for GNSS band 1559-1615MHz applications Pin Definition Symbol Comment 1 GND General ground 2 VCC DC supply 3 AO LNA output 4 GNDRF LNA RF ground 5 AI LNA input 6 PON Power on control Table 2 Mode Switching Mode Symbol ON/OFF Control Voltage Min Max On PON, on 1.0V VCC Off PON, off 0 0.4 Application Note AN272, Rev. 1.0 8 / 24 2011-08-11 BGA925L6 Highly Linear LNA for GPS/GLONASS/Galileo/COMPASS Application Circuits 3 Application Circuits Table 3 Schematic diagram of various application circuits based around BGA925L6 Application Circuit Remarks SAW filter from BGM1033 is used in all the measurements where it is specified. IL @ 1575 MHz = 0.94 dB IL @ 787 MHz = 20 dB SAW RFIN RFOUT BGA925L6 N1 RFin C1 GNDRF, 4 AO, 3 AI, 5 VCC, 2 AN265 is the standard application circuit for BGA925L6. C1 = 1 nF (0201) C2 = 10 nF (0201) L1 = 5.6 nH (LQP series - 0201) N1 = BGA925L6 (LNA) RFout Vcc L1 C2 (optional) PON, 6 GND, 1 Pon BGA925L6 N1 RFin GNDRF, 4 AO, 3 AI, 5 VCC, 2 PON, 6 GND, 1 TR1067 is the application which deals with the improvement of nd band-13 2 harmonic. C1 = 2.7 pF (0201) C2 = 10 nF (0201) C3 = 6.8 pF (0201) L3 = 5.6 nH (LQG series – 0402) N1 = BGA925L6 (LNA) RFout Vcc C1 C2 (optional) L3 Pon C3 Notch N1 SAW RFin BGA925L6 GNDRF, 4 AO, 3 AI, 5 VCC, 2 RFout Vcc C1 C2 (optional) L1 PON, 6 GND, 1 Pon C3 Notch N1 SAW BGA925L6 GNDRF, 4 AO, 3 AI, 5 VCC, 2 RFout Vcc L2 RFin C1 (optional) PON, 6 L1 GND, 1 Pon C2 Notch Application Note AN272, Rev. 1.0 9 / 24 SAW Notch LNA is the application which is designed to improve LTE nd band-13 2 harmonic and also suppress other out-of-band jammers using pre-SAW filter. C1 = 2.7 pF (0201) C2 = 10 nF (0201) C3 = 6.8 pF (0201) L1 = 5.6 nH (LQG series – 0402) N1 = BGA925L6 (LNA) Notch SAW LNA application circuit is designed to improve the immunity against LTE band-13 jammers and also other out-of-band signals by using a pre-SAW filter. C1 = 10 nF (0201) C2 = 4.7 pF (0201) L1 = 8.2 nH (LQG series – 0402) L2 = 6.8 nH (LQG series – 0402) N1 = BGA925L6 (LNA) 2011-08-11 BGA925L6 Highly Linear LNA for GPS/GLONASS/Galileo/COMPASS Typical Measurement Results 4 Typical Measurement Results Table 4 to Table 7 show typical measurement result of the application circuits shown in Table 3. The values given in this table include losses of the board and the SMA connectors if not otherwise stated. Table 4 Electrical Characteristics (at room temperature), Vcc = Vpon = 1.8 V Parameter Symbol Value Unit DC Voltage Vcc 1.8 V Frequency Range Freq 1575 MHz Application Circuit AN265 TR1067 SAW Notch LNA Notch SAW LNA DC Current Icc 4.8 4.8 4.8 4.8 mA Gain G 15.6 15.2 14.7 15.0 dB Noise Figure NF 0.73 0.95 1.69 1.83 dB Input Return Loss RLin 12.6 9.5 13.9 17.9 dB Output Return Loss RLout 23.4 15.6 15.7 21.8 dB Reverse Isolation IRev 21.8 22.4 23.4 22.6 dB fgps = 1575 MHz IP1dB -8.1 -9.5 -9.5 -7.1 dBm Output P1dB OP1dB 6.5 4.6 4.2 6.9 dBm Stability k -- -- Input P1dB Application Note AN272, Rev. 1.0 >1 10 / 24 2011-08-11 BGA925L6 Highly Linear LNA for GPS/GLONASS/Galileo/COMPASS Typical Measurement Results Table 5 Electrical Characteristics (at room temperature), Vcc = Vpon = 2.8 V Parameter Symbol Value Unit DC Voltage Vcc 2.8 V Frequency Range Freq 1575 MHz Application Circuit AN265 TR1067 SAW Notch LNA Notch SAW LNA DC Current Icc 5.0 5.0 5.0 5.0 mA Gain G 15.6 15.3 14.8 15.0 dB Noise Figure NF 0.73 0.96 1.7 1.84 dB Input Return Loss RLin 12.6 9.5 13.5 16.4 dB Output Return Loss RLout 23.4 14.3 14.2 19.4 dB Reverse Isolation IRev 21.8 22.9 23.1 24.0 dB fgps = 1575 MHz IP1dB -7.1 -9.5 -9.3 -6.2 dBm Output P1dB OP1dB 6.5 4.7 4.5 7.8 dBm Stability k -- -- Input P1dB Application Note AN272, Rev. 1.0 >1 11 / 24 2011-08-11 BGA925L6 Highly Linear LNA for GPS/GLONASS/Galileo/COMPASS Typical Measurement Results Table 6 IMD comparison of different Application Circuits at Vcc=1.8V AN265 a TR1067 LTE Band-13 nd 2 Harmonic Level [dBm] -31.4 -104.3 In-band Output IP3 [dBm] 16.8 10.0 Out-of-band Output IM3 @ 1575.4 MHz [dBm] Out-of-band Output IM2 @ 1575.4 MHz [dBm] Out-of-band Output IM2 @ 1575.4 MHz [dBm] Table 7 a SAW b -84.6 SAW Notch Notch SAW Test Conditions b b LNA LNA -68.5 -93.9 a: fIN = 787.76 MHz, PIN = -25 dBm b: fIN = 787.76 MHz, PIN = +15 dBm 10.8 12.5 a/b: f1 = 1575.5 MHz, P1 = -30 dBm; f2 = 1576.5 MHz, P2 = -30 dBm a: f1 = 1712.7 MHz, P1 = -41 dBm; f2 = 1850 MHz, P2 = -41.5 dBm -120.7 -17.4 -120.8 -95.5 -83.5 -41.2 -69.2 -66.8 -40.1 -83.0 -53.3 -24.5 -79.1 -78.3 -23.2 b: f1 = 1712.7 MHz, P1 = +10 dBm; f2 = 1850 MHz, P2 = +10 dBm a: f1 = 787.4 MHz, P1 = -20 dBm; f2 = 788 MHz, P2 = -20 dBm b: f1 = 787.4 MHz, P1 = +20 dBm; f2 = 788 MHz, P2 = +20 dBm a: f1 = 824.6 MHz, P1 = -17 dBm; f2 = 2400 MHz, P2 = -40 dBm b: f1 = 824.6 MHz, P1 = +23 dBm; f2 = 2400 MHz, P2 = 0 dBm IMD comparison of different Application Circuits at Vcc=2.8V AN265 a TR1067 LTE Band-13 nd 2 Harmonic Level [dBm] -31.7 -104.7 In-band Output IP3 [dBm] 17.5 10.1 Out-of-band Output IM3 @ 1575.4 MHz [dBm] Out-of-band Output IM2 @ 1575.4 MHz [dBm] Out-of-band Output IM2 @ 1575.4 MHz [dBm] a SAW b -84.6 SAW Notch Notch SAW Test Conditions b b LNA LNA a: fIN = 787.76 MHz, PIN = -25 dBm -68.5 -93.8 b: fIN = 787.76 MHz, PIN = +15 dBm 10.9 12.5 a/b: f1 = 1575.5 MHz, P1 = -30 dBm; f2 = 1576.5 MHz, P2 = -30 dBm a: f1 = 1712.7 MHz, P1 = -41 dBm; f2 = 1850 MHz, P2 = -41.5 dBm -119.7 -17.5 -41.2 -119.8 -83.7 -66.9 Application Note AN272, Rev. 1.0 -95.5 -69.2 -40.1 -83.2 -53.3 -24.5 12 / 24 -79.0 -78.7 -23.1 b: f1 = 1712.7 MHz, P1 = +10 dBm; f2 = 1850 MHz, P2 = +10 dBm a: f1 = 787.4 MHz, P1 = -20 dBm; f2 = 788 MHz, P2 = -20 dBm b: f1 = 787.4 MHz, P1 = +20 dBm; f2 = 788 MHz, P2 = +20 dBm a: f1 = 824.6 MHz, P1 = -17 dBm; f2 = 2400 MHz, P2 = -40 dBm b: f1 = 824.6 MHz, P1 = +23 dBm; f2 = 2400 MHz, P2 = 0 dBm 2011-08-11 BGA925L6 Highly Linear LNA for GPS/GLONASS/Galileo/COMPASS Measured Graphs for different application circuits of BGA925L6 5 Measured Graphs for different application circuits of BGA925L6 Figure 3 Wideband power gain of different application circuits at supply voltage of 1.8V Figure 4 Wideband power gain of different application circuits at supply voltage of 2.8V Application Note AN272, Rev. 1.0 13 / 24 2011-08-11 BGA925L6 Highly Linear LNA for GPS/GLONASS/Galileo/COMPASS Measured Graphs for different application circuits of BGA925L6 Figure 5 Narrowband power gain of different application circuits at supply voltage of 1.8V Figure 6 Narrowband power gain of different application circuits at supply voltage of 2.8V Application Note AN272, Rev. 1.0 14 / 24 2011-08-11 BGA925L6 Highly Linear LNA for GPS/GLONASS/Galileo/COMPASS Measured Graphs for different application circuits of BGA925L6 Figure 7 Input matching of different application circuits at supply voltage of 1.8V Figure 8 Input matching of different application circuits at supply voltage of 2.8V Application Note AN272, Rev. 1.0 15 / 24 2011-08-11 BGA925L6 Highly Linear LNA for GPS/GLONASS/Galileo/COMPASS Measured Graphs for different application circuits of BGA925L6 Figure 9 Output matching of different application circuits at supply voltage of 1.8V Figure 10 Output matching of different application circuits at supply voltage of 2.8V Application Note AN272, Rev. 1.0 16 / 24 2011-08-11 BGA925L6 Highly Linear LNA for GPS/GLONASS/Galileo/COMPASS Measured Graphs for different application circuits of BGA925L6 Figure 11 Reverse isolation of different application circuits at supply voltage of 1.8V Figure 12 Reverse isolation of different application circuits at supply voltage of 2.8V Application Note AN272, Rev. 1.0 17 / 24 2011-08-11 BGA925L6 Highly Linear LNA for GPS/GLONASS/Galileo/COMPASS Measured Graphs for different application circuits of BGA925L6 1dB compression point at 1575MHz with Vcc=1.8V 20 AN265 TR1067 SAW Notch LNA 18 Notch SAW LNA Gain (dB) -25 dBm 15.48 dB -25 dBm 15.05 dB 16 -25 dBm 14.9 dB 14 -8.116 dBm 14.48 dB -9.513 dBm 14.05 dB -25 dBm 14.61 dB 12 -7.142 dBm 13.9 dB -9.532 dBm 13.61 dB 10 -25 Figure 13 -20 -15 -10 Power (dBm) -5 0 Input 1dB compression point of different application circuits at supply voltage of 1.8V 1dB compression point at 1575MHz with Vcc=2.8V 20 AN265 TR1067 SAW Notch LNA Gain (dB) 18 -25 dBm 15.6 dB Notch SAW LNA -25 dBm 15.14 dB 16 -7.056 dBm 14.6 dB -6.21 dBm 13.95 dB -25 dBm 14.95 dB 14 -9.541 dBm 14.14 dB -25 dBm 14.66 dB 12 -9.306 dBm 13.66 dB 10 -25 Figure 14 -20 -15 -10 Power (dBm) -5 0 Input 1dB compression point of different application circuits at supply voltage of 2.8V Application Note AN272, Rev. 1.0 18 / 24 2011-08-11 BGA925L6 Highly Linear LNA for GPS/GLONASS/Galileo/COMPASS Measured Graphs for different application circuits of BGA925L6 Figure 15 Noise figure of different application circuits at supply voltage of 1.8V Figure 16 Noise figure of different application circuits at supply voltage of 2.8V Application Note AN272, Rev. 1.0 19 / 24 2011-08-11 BGA925L6 Highly Linear LNA for GPS/GLONASS/Galileo/COMPASS Miscellaneous Measured Graphs 6 Miscellaneous Measured Graphs 0.8 1.0 Input matching @ Vcc=1.8V SAW Swp Max 1609MHz TR1067 2. 0 6 0. AN265 SAW Notch LNA 0. 4 0 3. Notch SAW LNA 1575 MHz r 1.00565 x 0.256949 5.0 1575 MHz r 1.21398 x -0.158729 10.0 10.0 5.0 4.0 2.0 1.0 0.8 0.6 0.4 0.2 0.2 3.0 1575 MHz r 1.3459 x 0.723679 1575 MHz r 0.631775 x 0.102603 1575 MHz r 0.666205 x 0.0255987 0 0 4. -10.0 2 -0. -4 .0 -5. 0 -3 .0 Figure 17 .0 -2 Swp Min 1575MHz -1.0 -0.8 -0 .6 .4 -0 Input matching of different application circuits at supply voltage of 1.8V 0.8 1.0 Input matching @ Vcc=2.8V SAW Swp Max 1609MHz TR1067 2. 0 6 0. AN265 SAW Notch LNA 0. 4 0 3. Notch SAW LNA 5.0 10.0 10.0 5.0 4.0 1575 MHz r 1.21398 x -0.158729 3.0 1.0 0.8 0 1575 MHz r 0.65033 x -0.00393831 0.6 0.4 0.2 0.2 1575 MHz r 0.641931 x 0.0662929 0 4. 1575 MHz r 1.27495 x 0.742449 2.0 1575 MHz r 1.00075 x 0.305462 -10.0 2 -0. -4 .0 -5. 0 -3 .0 Figure 18 .0 -2 -1.0 -0.8 -0 .6 .4 -0 Swp Min 1575MHz Input matching of different application circuits at supply voltage of 2.8V Application Note AN272, Rev. 1.0 20 / 24 2011-08-11 BGA925L6 Highly Linear LNA for GPS/GLONASS/Galileo/COMPASS Miscellaneous Measured Graphs 0.8 1.0 Output matching @ Vcc=1.8V SAW Swp Max 1609MHz TR1067 2. 0 6 0. AN265 SAW Notch LNA 0. 4 0 3. Notch SAW LNA 1575 MHz r 0.826679 x 0.248187 0 4. 1575 MHz r 0.995348 x 0.332921 5.0 0.2 1575 MHz r 1.08027 x -0.239448 2 -0. -4 .0 -5. 0 -3 .0 Swp Min 1575MHz -1.0 -0.8 -0 .6 .0 -2 .4 -0 Figure 19 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.4 0.2 1575 MHz r 1.06274 x 0.156526 -10.0 0 0.6 10.0 1575 MHz r 0.87259 x 0.00156279 Output matching of different application circuits at supply voltage of 1.8V 0.8 1.0 Output matching @ Vcc=2.8V SAW Swp Max 1609MHz TR1067 2. 0 6 0. AN265 SAW Notch LNA 0. 4 0 3. Notch SAW LNA 0 4. 5.0 10.0 1575 MHz r 1.08027 x -0.239448 2 -0. 4 .0 -5. 0 -3 .0 .0 -2 -1.0 -0.8 -0 .6 .4 -0 Figure 20 5.0 10.0 4.0 3.0 1575 MHz r 1.01576 x 0.217306 2.0 1.0 0.4 0.2 1575 MHz r 0.979303 x 0.38534 -10.0 0 0.8 0.2 1575 MHz r 0.859237 x 0.0518487 0.6 1575 MHz r 0.786516 x 0.281071 Swp Min 1575MHz Output matching of different application circuits at supply voltage of 2.8V Application Note AN272, Rev. 1.0 21 / 24 2011-08-11 BGA925L6 Highly Linear LNA for GPS/GLONASS/Galileo/COMPASS Evaluation Boards 7 Evaluation Boards Table 8 PCBs for different application circuits under consideration SAW filter (From BGM1033 Module), Rogers TR1067 – BGA925L6 with 787 MHz notch, FR4 AN265 - Standard Application board BGA925L6, FR4 SAW Notch LNA – BGA925L6 with SAW filter and Notch, FR4 Notch SAW LNA – BGA925L6 with Notch and SAW filter, FR4 Application Note AN272, Rev. 1.0 PCB layer stack 22 / 24 2011-08-11 BGA925L6 Highly Linear LNA for GPS/GLONASS/Galileo/COMPASS Authors 8 Authors Jagjit Singh Bal, Application Engineer of Business Unit “RF and Protection Devices”. Dr. Chih-I Lin, Senior Staff Engineer of Business Unit “RF and Protection Devices”. Application Note AN272, Rev. 1.0 23 / 24 2011-08-11 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG AN272