Application Guide RF & Protection Devices Protection Edition 2014 www.infineon.com/rfandprotectiondevices Edition 2014-07-01 Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Protection Devices Application Guide Infineon Technologies A Leading Company in RF and Protection Devices Infineon Technologies focuses on the three central challenges facing modern society: Energy Efficiency, Mobility and Security and offers semiconductors and system solutions for industrial/consumer electronics, automotive electronics, chip card and security applications. Infineon’s products have a reputation for leading-edge innovation, high reliability, and exceptional quality performance in RF, protection, analog, mixed signal, embedded control, and the highest efficiency power solutions. With its technologies and design expertise, Infineon is the market leader in its focus segments. Infineon has more than 30 years of experience in developing RF products for numerous applications and always leads in the market with high performance, yet cost effective products. You can visit our website www.infineon.com to learn more about the broad product portfolio of Infineon Technologies. The Infineon business unit - RF and Protection Devices (RPD) - has evolved over the years from a supplier of standard RF discrete components like transistors and diodes to a more advanced portfolio of state-of-the-art, innovative and differentiated products including application specific MMICs, Silicon Microphones and ESD protection components. Please visit our website www.infineon.com/rfandprotectiondevices to learn more about Infineon’s latest RF and Protection products for your applications. Infineon’s application guide consisting of four different brochures is an easy-to-use tool primarily meant for engineers to efficiently guide them to the right device for their system. This application guide is updated frequently to include latest applications and trends. Each brochure focuses on a market segment that we support: 1. Application Guide for Mobile Communication: www.infineon.com/rpd_appguide_mobile 2. Application Guide for Consumer Applications: www.infineon.com/rpd_appguide_coknsumer 3. Application Guide for Industrial Applications: www.infineon.com/rpd_appguide_industrial 4. Application Guide for Protection: www.infineon.com/rpd_appguide_protection Our application experts worldwide are always ready to support you in designing your systems with our devices. Please contact Infineon’s Regional Offices or one of Infineon Worldwide Distribution Partners in your area to get all the support you might need. Kind Regards Dr. Heinrich Heiss Dipl.-Ing. Alexander Glas Director Technical Marketing & Application Engineering RPD Group Leader Technical Marketing & Application Engineering, Protection, RPD 3 Protection Devices Application Guide INDEX Infi neo n T e chn olo gi e s ................................................................................................................................... 3 1 Infineon’s ESD and ESD/EMI Protection Devices ........................................................................... 5 2 2.1 2.2 ESD Protection is the Key Success Factor for Reliable Products ................................................ 7 Device Level ESD and System Level ESD – Two Sides of a Coin ...................................................... 7 Device Level ESD and System Level ESD – Two Sides of a Coin ...................................................... 9 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 High Speed Data Interface Protection ............................................................................................ 10 ESD Protection for USB 3.0 ............................................................................................................... 13 ESD Protection for USB 2.0 ............................................................................................................... 14 ESD Protection for Dual Port USB 2.0 ............................................................................................... 15 Serial ATA, e-SATA Generation 1 (1.5 Gbit/s), 2 (3 Gbit/s), 3 (6 Gbit/s) ........................................... 16 ESD Protection for HDMI 1.3a & 1.4 .................................................................................................. 17 ESD Protection for DisplayPort & DVI & MHL ................................................................................... 18 ESD Protection for the Thunderbolt 10Gb/s port ............................................................................... 19 4 4.1 4.2 General Purpose Interface Protection ........................................................................................... 20 ESD Protection for Low Data Rate Interfaces .................................................................................... 21 ESD Protection for Dual Channel General Purpose e.g. AV I/F Interfaces ....................................... 22 5 5.1 5.2 5.3 ESD Protection in RF circuits ......................................................................................................... 23 Global Navigation Satellite System (GNSS) ...................................................................................... 23 Dual-Band (2.4–6.0 GHz) WLAN (IEEE 802.11a/b/g/n) Front-End ................................................... 24 ESD Protection for Near Field Communication (NFC) ....................................................................... 25 6 6.1 6.2 6.3 6.4 ESD / Surge Protection .................................................................................................................... 26 ESD Requirements:............................................................................................................................ 27 Surge Requirements: ......................................................................................................................... 27 ESD Surge Protection for Gigabit Ethernet ........................................................................................ 30 ESD and Transient Protection for VDSL, ADSL & Other Broadband Applications ............................ 31 7 7.1 7.2 ESD and ESD/EMI Interface Protection .......................................................................................... 32 Interface Protection with Discrete TVS Protection Diodes ................................................................. 33 Interface Protection with Integrated ESD/EMI Devices...................................................................... 35 Abbreviations ....................................................................................................................................................... 36 Alphanumerical List of Symbols ........................................................................................................................ 37 Package Information ........................................................................................................................................... 38 Support Material .................................................................................................................................................. 39 4 Protection Devices Application Guide for Protection 1 Infineon’s ESD and ESD/EMI Protection Devices In today’s electronics, being faster, smaller and smarter creates profitability by enabling new and better applications. The race to pack even more high-speed functions into a smaller space accelerates miniaturization roadmaps. However, the downscale of semiconductor chips together with the increase of doping levels results in a dramatic reduction of the thin gate oxide layer and the width of the pn-junction in semiconductor chips. In combination with greater circuit population, this increases the susceptibility of the semiconductor chip to ESD. Subsequent failures of the electronic equipment can be noticed immediately as hard failures or temporary equipment malfunction, or in latent damage that is not recognized until later in the equipment lifecycle. Hard failures are the easiest to recognize, and in general require the failed device to be replaced. In the best case, any failure will be detected before the equipment leaves the factory and customers will never receive it. Failures leading to temporary malfunction of equipment or latent failures are quite common and very difficult to detect or trace. Temporary malfunctions may go unreported by customers all-the-while resulting in negative customer impressions as the user repeatedly restarts or resets the equipment. Latent damage that eventually leads to hard failure or unreliable operation of the equipment while in the field may cause the most negative impression and lower customer confidence in the company that provided it. Product recalls requiring swapping or repairing equipment due to ESD failures can cost the manufacturer and/or the user several times more than the original equipment cost. Figure 1 Integrated circuit before ESD strike Integrated circuit after ESD strike An efficient system design normally includes the implementation of a shielded chassis in order to minimize the risk of ESD damage. Nevertheless, ESD strikes represent a permanent threat to device reliability as they can easily find a way to bypass the shielded chassis and be injected into the vulnerable ICs and ASICs. All connectors and antennas exposed to the outside world are possible entry points for ESD generated by end users or even self-generated ESD from moving equipment components. The relentless decrease in IC and ASIC geometries has reached a point where adequate ESD protection structures incorporated on the device’s substrate is no longer feasible. Now, the only way to ensure stable operation and to maximize reliability is to protect the equipment against ESD and transients with external protection devices. 5 Protection Devices Application Guide for Protection The most effective and economical system level protection is accomplished when the requirements are considered early in the design cycle. ESD has become a pervasive normal operating condition that requires diligent consideration. Let’s explore this topic further. Infineon’s Value Proposition Infineon’s protection solutions improve ESD immunity at the system level beyond the requirements of the IEC 61000-4-2 level-4 standard with: Superior multi-strike absorption capability; Safe and stable clamping voltages to protect even the most sensitive electronic equipment; Protection devices that fully comply with high-speed signal quality requirements; Easy-to-use single devices in leading miniaturized packages for space-constrained applications; Array solutions for board space savings and reduced parts count; Flow through package pin outs enabling easier PCB layout with minimized crosstalk and parasitic influences on the signal quality. Extremely low leakage currents to extend battery life further; For further information about our ESD diode portfolio and their applications, please visit our webpage for protection devices: www.infineon.com/protection. Furthermore, Infineon offers various high performance types of discrete ESD protection devices for mobile phone applications to protect our customers’ mobile phones from ESD attacks. Following is a short overview of the available ESD protection devices for various interfaces used in mobile phones. Figure 2 Overview of Infineon’s ESD Diodes for Interface Protection 6 Protection Devices Application Guide for Protection 2 ESD Protection is the Key Success Factor for Reliable Products 2.1 Device Level ESD and System Level ESD – Two Sides of a Coin System level ESD protection is defined by the IEC 61000-4-2 standard. In general, all ICs and ASICs incorporate some level of ESD protection to see the device through the manufacturing process undamaged. The integrated protection is normally designed according to the HBM (Human Body Model) specification. ESD robustness, according to the HBM, is only sufficient for safe device handling and system assembly which takes place in a production environment where ESD is highly controlled and minimized. Once out in the real world, the equipment will face the threat of ESD strikes happening everywhere, at any time. In order for the equipment to survive beyond the factory environment, IEC 61000-4-2 system level ESD protection is required. The final system level protection solution is achieved through consideration of the systems native integrated protection in combination with a carefully selected external protection device so that all facets of the final protection solution meet the protection requirements of the application. The current industrial HBM robustness standard applied to semiconductor device level protection is 2 kV. In general, and with few exceptions, 2 kV HBM protection in current semiconductor devices is the highest protection level. Few have higher protection and more and more are being produced with lower protection, even down in the range of 250V to 350V. The 2 kV IEC 61000-4-2 defined system level ESD strike delivers 750% higher energy to the Device Under Test (DUT) than the 2 kV HBM strike. However, the days are gone where the 2 kV system level ESD robustness was sufficient or the standard. The new requirement for system level robustness is generally 8 kV, a 12,000% increase over the 2 kV HBM standard. There are many indications that the future robustness standard for system level protection will reach 15 kV, which serves up a 41000% higher destructive energy burst to the DUT than the 2 kV HBM strike. Residual ESD stress vs. ESD model 100 10 10 IEC_8kV IEC_2kV diss_load IEC_1kV 1000 100 1 Reference 1000 P 0ns factor 410 HBM_1kV Logarithmic scaling !!! 10000 10000 factor 120 IEC_15kV 400ns Ediss_load HBM_2kV Dissipated ESD Energy [nJ/Ohm] 100000 100000 E_HBM_1kV E_HBM_1kV E_HBM_2kV E_HBM_2kV E_IEC_1kV E_IEC_1kV E_IEC_2kV E_IEC_2kV E_IEC_8kV E_IEC_8kV E_IEC_15kV E_IEC_15kV factor 7.5 1 Figure 3 Residual ESD stress versus ESD model 7 Protection Devices Application Guide for Protection The physical background causing electrostatic charging is the triboelectric effect or triboelectric charging, where electrical charge-carriers are separated from some materials after coming into contact with another different material. This separation of charge-carriers takes place in our daily experience. Just the process of sitting down and standing up from a chair can cause a 15 kV electrostatic voltage in the human body. Walking over a carpet can easily double the 15 kV static charge to 30 kV. During winter time, when the air has lower humidity, the problem of static discharge is further amplified in magnitude and frequency of occurrence. The job of the ESD protection device is to shunt the destructive energy of the ESD strike to ground – before the ESD strike energy is reaching the IC I/Os. It is important to place the ESD protection device (TVS diode) as close as possible to the external connector where is ESD strike enters the system. Doing this, there is NO ESD strike on the signal line between TVS diode and the IC/IO. Second order effects caused by induced ESD energy in adjacent lines (e.g. internal signal lines judged as NOT ESD sensitive) are avoided. It is obvious the clamping voltage of the TVS diode must be as low as possible to keep the residual ESD stress for the IC/IO as small as possible. Regarding ongoing miniaturization of electronic devices the maximum ESD voltage (Vt2) the IC/IO can handle is going continuously down. Therefore the ESD protection concept / TVS diode performance must follow the technology node (e.g. 90nm, 65nm, 45nm….) of the ICs. IC pins with external connections Internal IC pins PCB internal connections Figure 4 TVS Diode IC prot. Clamping voltage Vt2 IC ESD current via TVS diode External interface System level ESD pulse Residual ESD current via IC PCB Location of TVS diode to shunt the ESD strike to ground ESD Protection – An Application Tailored Business Each application has its own set of requirements for robustness, signal integrity, board area and price point. With Infineon’s portfolio of leading-edge ESD protection devices, the right ESD protection solution can be tailored for any application’s requirements. We continue with some general rules to minimize the residual stress of an ESD strike on the PCB and its components. 8 Protection Devices Application Guide for Protection Device Level ESD and System Level ESD – Two Sides of a Coin 2.2 For maximum system level ESD protection, several basic considerations should be kept in mind beginning with the overall system concept; from the industrial design to the PCB layout. The industrial design should be the first point of consideration. Where possible, the equipment housing should incorporate metal shielding around exposed connectors and HID interfaces to prevent ESD strikes from traveling deeper into the system. The PCB layout has a significant impact on the overall system level ESD performance of a system and is the next point of consideration. First, protection devices should be placed as near as possible to points of ESD entry such as connectors and exposed antennas or other identified points of entry. Second, spacing between traces where external signals originate and internal signal traces needs to be maximized to prevent high voltage ESD strikes from hopping from the external trace to internal traces where there is little protection offered to the semiconductors they feed. Third, any series inductance in-line with the ESD diode should be avoided. Series inductance can be caused by nearby PCB traces and GND via holes. Even inductances of less than 1 nH visibly impact the residual peak overshoot voltage. This peak voltage only lasts a few nano-seconds, but when extended by parasitic series inductance, it can cause huge damage to critically sensitive components such as GaAs devices in RF stages or high speed data circuits. In high speed stages, which typically have very low input capacitance, the residual overshoot, caused by the addition of series inductance, enters the device input un-smoothed with destructive consequences. ESD strike Main ESD current Figure 5 PCB inductance TVS current Rdyn Dynamic TVS Diode clamping voltage Induced voltage dITVS/dt Clamping voltage @ IC input PCB-Line Bond wire TVS diode PCB-Line Residual ESD current PCB Layout (“T” routing) with parasitic Inductance in series with the ESD Diode 9 Protection Devices Application Guide for Protection A simple example demonstrates the level of the inductive component of the residual peak clamping voltage: A 15 kV contact discharge strike (IEC 61000-4-2) generates a peak current of ~55 A. Assuming a parasitic inductance of 1 nH and a 0.85 ns rise-time of the ESD strike (defined as 10% / 90% in IEC61000-4-2) the inductive overshoot is in the range of 50 V, possibly higher. It is possible to significantly reduce parasitic series inductance using a “Y” shaped layout to connect the ESD diode direct to the signal line. The GND via hole should be placed as near to the ESD diode solder pad as permitted by the PCB design rules. ESD strike Main ESD current PCB-Lines Clamping voltage @ IC input TVS current Dynamic TVS Diode clamping voltage Bond wire PCB-Line Induced voltage dITVS/dt Rdyn TVS diode PCB-Line Figure 6 Residual ESD current Optimized “Y” Shaped Routing to Reduce Parasitic Series Inductance The length of the “Y” shaped PCB lines becomes uncritical because they are not in series with the ESD diode any more. The PCB inductance is substituted by the serial “Y” shaped PCB lines. Induced voltage is limited to the bond wire only. 3 High Speed Data Interface Protection High speed data interfaces such as FireWire, MIPI, SATA, DVI, DisplayPort, HDMI 1.3/1.4a, USB 2.0/3.0 and in future USB3.1/Thunderbolt are widely used in today’s consumer electronics. These interfaces are normally exposed to ESD during routine use. As data transmission speed continues to increase, e.g. maximum 3.4 Gbit/s per differential line-pair for HDMI and 5 Gbit/s for USB 3.0 SuperSpeed, the transmitter and receiver designs are shrunk to smaller geometries to support the growing data rate. This however causes ICs to be more sensitive to high current and high-energy ESD threats. According to the IEC 61000-4-2, level-4, an 8 kV ESD event will have a peak discharge current up to 30 A which ICs cannot withstand. To handle this large discharge current, external ESD protection devices are required on high speed data interfaces. However, the parasitic capacitance associated with external ESD protection devices can cause impedance mismatch and negatively impact signal integrity causing an increase in the BER (Bit Error Rate). The impact is more significant in proportion with the speed of the data link. 10 Protection Devices Application Guide for Protection To achieve effective protection, both ESD robustness and low parasitic capacitance are required for high speed interfaces. Infineon Technologies offers a silicon based ESD diode portfolio with single-line and multiple-line array solutions with the ability to absorb more damaging ESD energy well above the 8kV industrial standard while maintaining signal integrity for optimum performance. A key factor in the ability to absorb damaging ESD energy is the dynamic resistance of the protection device after turn-on. Normally, lowering the dynamic resistance of a device creates higher parasitic capacitance because the die size is increased to reduce the device’s on resistance. This trade-off between resistance and capacitance is easily observed by comparing ESD diode data sheets, if the supplier provides the dynamic resistance of its devices. Infineon’s unique leading-edge protection technology provides the best trade-off between a device’s ability to absorb large amounts of ESD energy with the least impact on signal integrity. Infineon’s ultra-low capacitance ESD diodes provide very low dynamic resistance under high ESD stress. This low resistance steers the damaging ESD pulse away from the high-speed data interface IC and into the protection diode effectively clamping the ESD voltage pulse on the IC at a very low level and avoiding damage to the IC. The rule is that the lower the dynamic resistance, the lower the clamping voltage on the IC being protected. The best means for accurately measuring the dynamic resistance of a protection device is the Transmission Line Pulse method or TLP for short. The complete TLP process is documented in AN210. As an example, the dynamic resistance of the ESD diode ESD3V3U4ULC has been extracted by TLP measurement to be only 0.19 Ohms as shown in the following IV trace. More examples with protection technology comparisons can be found in AN210. Figure 7 TLP measurement of ESD3V3U4ULC from I/O to GND 11 Protection Devices Application Guide for Protection Signal integrity is the key factor in achieving low bit error rate (BER) in high-speed data transmission. The measures of signal integrity are easily visualized with an eye diagram. Any time parasitic capacitance is introduced into a high-speed data path, the signal integrity of the path is lessened. In order to have minimal impact on signal integrity, Infineon ESD diodes are designed with ultra-low parasitic capacitance, typically only 0.4 pF (diode vs. GND). To judge the effect of Infineon ESD diodes in a USB3.0 SuperSpeed link, a complete system simulation with ESD3v3U4ULC on the host and client side includingdata cable loss was performed. The following eye diagram simulation results compares the receive eye pattern openings without ESD diodes (red contour) and with the protection of ESD diodes (blue contour). The ultra-low capacitance of the Infineon ESD diode causes only a negligible degradation in the eye–contour statistics while keeping a huge safety margin with respect to the USB 3.0 specification mask. USB3.0 SS eye-pattern Spec. Mask (BER 10E-12) USB3.0 SS eye-contour statistic of 10E12 bits - without TVS diode - USB3.0 SS eye-contour statistic of 10E12 bits - with TVS diode - Inner eye opening statistic of ~10E6 bits Figure 8 Eye diagram w. and w/o. ESD3V3U4ULC located at host and device sides Infineon’s growing portfolio of ESD diodes are offered in the world’s smallest packages and in arrays with flowthrough design to enable protection of high speed data interfaces in the most space constrained applications with the least impact on signal integrity. Differential pairs in high-speed data links must be impedance matched with identical delays in each signal path, and crosstalk with other signal paths must be avoided. These conditions are easily met using Infineon protection arrays in flow-through packages. The differential data pairs flow into one side of the package and out the other side of the package so that delays in each path remain the same while keeping adjacent signal crosstalk due to complex PCB layout maneuvers to a minimum. 12 Protection Devices Application Guide for Protection ESD Protection for USB 3.0 TX+ SuperSpeed Data IN TX+ TX+ RX+ + TX- connector TXUSB3.0: SS-Hub e.g. PC + RX+ RX- USB3.0: SS-Device e.g. storage RX+ TX+ RX- RX- ESD diodes TX+ D+ USB2.0 Device HS/FS/LS D+ + - USB2.0 Data OUT + RX D- TX- USB2.0 Data OUT SuperSpeed Data IN + - TX- USB2.0 HUB HS/FS/LS USB2.0 Data IN TX- USB3.0 cable SuperSpeed Link RX+ SuperSpeed Data OUT SuperSpeed Data OUT + - RX- connector 3.1 mated connector + RX - D- USB3.0 cable USB2.0 Link mated connector TX+ USB2.0 Data IN + - TX- ESD Diodes Product Application VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD102-U4-05L USB3.0-SS MIPI, HDMI +3.3 ±20 8@16 11@30 0.2 1 3 4.8 6.2 0.35 4 TSLP-5-2 ESD3V3U4ULC USB3.0-SS MIPI, HDMI +3.3 ±20 8@16 11@30 0.2 1 3 4.8 6.2 0.35 4 TSLP-9-1 ESD102-U1-02ELS USB3.0-SS MIPI, HDMI +3.3 ±20 8@16 11@30 0.2 1 3 4.8 6.2 0.35 1 TSSLP-2-3 ESD102-U2-099EL USB3.0-SS MIPI, HDMI +3.3 ±20 8@16 11@30 0.2 1 3 4.8 6.2 0.35 2 TSLP-4-10 ESD5V5U5ULC USB2.0-HS, Vcc +5.5 ±25 8.9@16 11.5@30 0.2 6 10 0.45 5 SC74 ESD205-B1 02EL8) / 02ELS USB2.0-FS Vcc ±5.5 ±20 +10/-12@±16 +13/-17@±30 0.22 0.35 1 2.5 8.5 10 5 1 TSLP-2-19 TSSLP-2-3 ESD206-B1 02EL / 02ELS / 02V Vcc +5.5 ±30 +9/-9@±16 +11/-11@±30 0.15 ±6 ±9.6 13 1 TSLP-2-19 TSSLP-2-3 SC79 Notes: 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length); 4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices. 8) Coming soon – Datasheet will be available on our webpage http://www.infineon.com/tvsdiodes 13 Protection Devices Application Guide for Protection 3.2 ESD Protection for USB 2.0 Host controller Device controller ESD diodes GND D+ D1+ Data IN / OUT D+ D1+ Data #1 IN / OUT D1- D1D- DVcc USB2.0 cable USB2.0 Host1 LS/FS/HS USB2.0 Device1 LS/FS/HS USB Connectors Vcc Vcc ESD Diodes Product Application VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD5V3U1U 02LRH / 02LS high speed Vcc +5.3 ±15 19@16 28@30 0.65 3 12 0.4 1 TSLP-2-7 TSSLP-2-1 ESD5V3U2U 03F / 03LRH high speed Vcc +5.3 ±15 19@16 28@30 0.65 3 12 0.4 2 TSLP-3-7 TSFP-3 ESD205-B1 02EL8) / 02ELS USB2.0-FS Vcc ±5.5 ±20 +10/-12@±16 +13/-17@±30 0.22 0.35 1 2.5 8.5 10 5 1 TSLP-2-19 TSSLP-2-3 Notes: 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length); 4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices. 8) Coming soon – Datasheet will be available on our webpage http://www.infineon.com/tvsdiodes 14 Protection Devices Application Guide for Protection 3.3 ESD Protection for Dual Port USB 2.0 Host controller Device controller ESD diodes array GND D+ D1+ Data #1 IN / OUT D+ D1+ Data #1 IN / OUT D1- D1D- USB2.0 Connector Vcc USB2.0 Host2 LS/FS/HS DVcc USB2.0 Cable#1 USB2.0 Device1 LS/FS/HS Vcc USB2.0 Connector USB2.0 Host1 LS/FS/HS USB2.0 Device2 LS/FS/HS USB2.0 Cable#2 Vcc DD- D2- D2- Data #2 IN / OUT D2+ D+ Data #2 IN / OUT D2+ D+ GND ESD diodes array ESD Diodes Product Application VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD5V3U1U 02LRH / 02LS high speed Vcc +5.3 ±15 19@16 28@30 0.65 3 12 0.4 1 TSLP-2-7 TSSLP-2-1 ESD5V3U2U 03F / 03LRH high speed Vcc +5.3 ±15 19@16 28@30 0.65 3 12 0.4 2 TSLP-3-7 TSFP-3 ESD5V5U5ULC USB2.0-HS, Vcc +5.5 ±25 0.2 6 10 0.45 4 SC74 ESD205-B1 02EL8) / 02ELS USB2.0-FS Vcc ±5.5 ±20 8.9@16 11.5@30 +10/-12@±16 +13/-17@±30 0.22 0.35 1 2.5 8.5 10 5 1 TSLP-2-19 TSSLP-2-3 Notes: 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length); 4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices. 8) Coming soon – Datasheet will be available on our webpage http://www.infineon.com/tvsdiodes Vcc D1+ D1- D1+ D1- D2+ D2- D2+ D2- Flow through layout proposal for ESD5V5U5ULC in SC74. “V-shape” routing implemented for the Vcc line 15 Protection Devices Application Guide for Protection Serial ATA, e-SATA Generation 1 (1.5 Gbit/s), 2 (3 Gbit/s), 3 (6 Gbit/s) TX+ Data IN 3Gb/s, 6Gb/s A+ A+ RXA- connector TXSerial ATA Hub e.g. PC + RX+ RX- Data OUT 3Gb/s, 6Gb/s + - A- (e)Serial ATA cable B+ Data OUT 3Gb/s, 6Gb/s RX+ + - connector 3.4 Serial ATA-Device e.g. storage B+ TX+ + - TXB- Data IN 3Gb/s, 6Gb/s B- ESD diodes ESD Diodes Product Application ESD108-B1CSP02018) ESD112-B1 02EL / 02ELS ESD105-B1 02EL / 02ELS ESD113-B102EL8) / 02ELS high speed bidirectional high speed bidirectional high speed bidirectional high speed bidirectional Notes: VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] ±5.5 ±25 0.75 ±5.3 ±20 ±5.5 ±25 ±3.6 ±20 ±20@16 ±30.3@30 29@16 38@30 14.3@16 20.7@30 +14/-12@16 +20/-18@30 IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package 0.25 1 WLL-2-1 TSLP-2-20 TSSLP-2-4 TSLP-2-20 TSSLP-2-4 TSLP-2-20 TSSLP-2-4 1 3 15 0.23 1 1 5 11 0.25 1 0.45 3 8 0.22 1 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length); 4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices. 8) Coming soon – Datasheet will be available on our webpage http://www.infineon.com/tvsdiodes 16 Protection Devices Application Guide for Protection 3.5 ESD Protection for HDMI 1.3a & 1.4 +5V HDMI Type A Connector HDMI Source/Sink 1 TMDS Data2 2 3 High-Speed ESD protection 4 5 TMDS Data1 6 TMDS Channels 7 8 TMDS Data0 9 High-Speed ESD protection 10 11 TMDS Clock 12 CEC SCL ESD protection communication channel (Low-Speed) SDA 13 CEC Line 14 N.C. 15 DDC (I²C Bus) 16 Hot Plug Detect ESD protection supply Voltage Vcc 17 DDC/CEC GND 18 +5V 19 Hot Plug Detect ESD Diodes Product Application VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD5V3U4U-HDMI high speed +5.3 ±15 0.65 3 12 0.4 4 TSLP-9-1 ESD3V3U4ULC high speed +3.3 ±15 0.2 3 8.5 0.35 4 TSLP-9-1 ESD102-U4-05L high speed +3.3 ±20 19@16 28@30 8@16 11@30 8@16 11@30 0.2 1 3 4.8 6.2 0.35 4 TSLP-5-2 ESD5V3U2U 03LRH / 03F high speed +5.3 ±20 19@16 28@30 0.65 3 12 0.4 2 TSLP-3-7 TSFP-3 ESD102-U1-02ELS high speed +3.3 ±20 8@16 11@30 0.2 1 3 4.8 6.2 0.35 1 TSSLP-2-3 ESD5V5U5ULC high speed <2.0Gbps +5.5 ±25 0.2 6 10 0.45 4 SC74 ESD205-B1 02EL8) / 02ELS Control lines Vcc ±5.5 ±20 0.22 0.35 1 2.5 8.5 10 5 1 TSLP-2-19 TSSLP-2-3 ESD206-B1 02EL / 02ELS / 02V Vcc +5.5 ±30 0.15 ±6 ±9.6 13 1 TSLP-2-19 TSSLP-2-3 SC79 +9/-9@±16 +11/-11@±30 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length); 4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices. 8) Coming soon – Datasheet will be available on our webpage http://www.infineon.com/tvsdiodes 11 skinny trace „L2" Clock- width_ST 10 Clock+ 9 Data 0Data shield 0 7 Data 0+ 6 Data 1- 100 Ohm differential lines gap_ST width_diff100 Infineon ESD Diode 5 4 gap_diff100 100 Ohm differential lines GND_via Data 2- 2 Data shield 2 1 Data 2+ TMDS 2 100 Ohm differential lines Keep the „gap_(lane vs. lane)“ high to minimize adjacent lane x-talk HDMI flow through layout recommendation for the TSLP-9-1 17 100 Ohm 3 adjacent lane seperation to control alien x-talk TMDS 1 Data shield 1 Data 1+ TMDS 0 100 Ohm 8 100 Ohm differential lines TMDS clock Clock shield 100 Ohm W_pad=0.25 mm Pitch: 0.5mm skinny trace „L1" 12 100 Ohm HDMI Receptacle type „A“ landing pads Notes: 8.9@16 11.5@30 +10/-12@±16 +13/-17@±30 Protection Devices Application Guide for Protection 3.6 ESD Protection for DisplayPort & DVI & MHL +3.3V DisplayPort Connector Display Port Source/(Sink) 1 ML_Lane 0/(3) 2 3 High-Speed ESD protection 4 5 6 ML_Lane 1/(2) ML_Lanes 0...3 TMDS Channels 7 8 ML_Lane 2/(1) 9 High-Speed ESD protection 10 11 ML_Lane 3/(0) 12 Config1 13 Config1 Config2 14 Config2 AUX_pos Communication channel (Low-Speed) ESD protection AUX_neg Hot Plug Detect ESD protection supply Voltage Vcc 15 AUX_pos 16 GND 17 AUX_neg 18 Hot Plug Detect 19 Return DP_PWR 20 Power +3.3V ESD Diodes Product Application VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD5V3U4U-HDMI high speed +5.3 ±15 0.65 3 12 0.4 4 TSLP-9-1 ESD3V3U4ULC high speed Vcc +3.3 ±15 0.2 3 8.5 0.35 4 TSLP-9-1 ESD102-U4-05L high speed Vcc +3.3 ±20 19@16 28@30 8@16 11@30 8@16 11@30 0.2 1 3 4.8 6.2 0.35 4 TSLP-5-2 ESD5V3U2U 03LRH/03F high speed +5.3 ±20 19@16 28@30 0.65 3 12 0.4 2 TSLP-3-7 TSFP-3 ESD102-U1-02ELS high speed +3.3 ±20 8@16 11@30 0.2 1 3 4.8 6.2 0.35 1 TSSLP-2-3 ESD5V5U5ULC high speed <2.0Gbps +5.5 ±25 8.9@16 11.5@30 0.2 6 10 0.45 4 SC74 ESD205-B1 02EL8) / 02ELS Control lines Vcc ±5.5 ±20 +10/-12@±16 +13/-17@±30 0.22 0.35 1 2.5 8.5 10 5 1 TSLP-2-19 TSSLP-2-3 ESD206-B1 02EL / 02ELS / 02V Vcc +5.5 ±30 +9/-9@±16 +11/-11@±30 0.15 ±6 ±9.6 13 1 TSLP-2-19 TSSLP-2-3 SC79 Notes: 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length); 4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices. 8) Coming soon – Datasheet will be available on our webpage http://www.infineon.com/tvsdiodes 18 Protection Devices Application Guide 3.7 ESD Protection for the Thunderbolt 10Gb/s port +18Vmax Thunderbolt Connector Thunderbolt source / sink HS-Ch0-TX-p 3 3_High Speed #0 TX_p 1_GND 1 HS-Ch0-RX-p 4 5 4_High Speed #0 RX_p 5_High Speed #0 TX_n HS-Ch0-TX-n HS-Ch0-RX-n 7 7_GND 6 6_High Speed #0 RX_p HS-Ch1-TX-p 15 8 15_High Speed #1 TX_p 8_GND 16 17 16_High Speed #1 RX_p 17_High Speed #1 TX_n gnd 10, 12 GND reserved High-Speed ESD protection HS-Ch1-RX-p High-Speed ESD protection HS-Ch1-TX-n HS-Ch1-RX-n Low Speed TX Low Speed RX Low-Speed ESD protection Hot Plug Detect ESD protection supply Voltage Vcc 18 6_High Speed #1 RX_p 13 13_GND 14 14_GND 9 16 9_Low Speed TX 16_GND 11 11_Low Speed RX 2 2_Hot Plug Detect 19 19_Return/GND PWR 20 20_Power +18V max ESD Diodes Product Application VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD102-U4-05L high speed low speed +3.3 ±20 8@16 11@30 0.2 1 3 4.8 6.2 0.35 4 TSLP-5-2 ESD102-U1-02ELS high speed low speed +3.3 ±20 8@16 11@30 0.2 1 3 4.8 6.2 0.35 1 TSSLP-2-3 ESD113-B102EL8) /02ELS high speed low speed ±3.6 ±20 ±14@±16 ±20@±30 0.45 3 8 0.22 1 TSLP-2-20 TSSLP-2-4 ESD105-B102EL/02ELS high speed low speed ±5.5 ±25 ±13@±16 ±19@±30 0.35 2 5 8.5 11 0.3 1 TSLP-2-20 TSSLP-2-4 ESD5V3U2U 03LRH/03F low speed +5.3 ±20 19@16 28@30 0.65 3 12 0.4 2 TSLP-3-7 TSFP-3 ESD110-B102EL8) / 02ELS Vcc line ±18 ±15 ±28@16 ±34@25 0.60 1 17- 0.3 1 TSSLP-2-4 TSLP-2-20 ESD218-B102EL8) / 02ELS8) Vcc line ±24 ±20 55@16 72@30 1.3 1 40 2 1 TSSLP-2-4 TSLP-2-20 Notes: 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length); 4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices. 8) Coming soon – Datasheet will be available on our webpage http://www.infineon.com/tvsdiodes 19 Protection Devices Application Guide for Protection 4 General Purpose Interface Protection Infineon general purpose ESD diodes are designed to handle high-peak transient current far beyond current standards while remaining unchanged in protection characteristics even after repetitive strikes. These devices are especially well suited for ESD and transient protection of low-speed HID data normally used by keypads, buttons, touch screens and audio lines. These same devices provide excellent and economical protection for power and battery lines from which ESD has an entry point into the heart of the equipment. Even battery lines that are normally only accessed by field repair personnel are often protected to keep equipment safe during repairs and upgrades. The audio interfaces of a mobile phone such as the microphone, speaker and headset are highly exposed to the ESD environment during routine use. As shown in the audio circuit diagram below, an audio headset can trap and route ESD strikes to sensitive system components. ESD strikes can also enter the phone directly via the audio jack. The low output impedance of audio amplifiers in today’s mobile phone systems presents an exceptional challenge because an extremely low clamping voltage is required of the ESD protection solution to prevent damage to the amplifier. This makes low dynamic resistance a requirement in order for robust protection to be achieved. The RF amplifier in very close proximity also presents its own set of challenges that need to be overcome in order to prevent audio frequency rectification of the RF output stage that can enter the audio circuits and impact audio quality. Voltage Time Audio_out single ended Audio ESD-strike Headset cable -Vcc +Vcc Figure 9 Charge Pump Low loss EMI ferrite beat ESD Diode Amp. ESD-strike Headset Ear-phone +Vcc Audio_in NO-DC_offset Headset con. e.g. 3.5mm jack Application Example for typical ear-stick driver stage To combine robust ESD protection with EMI suppression, Infineon Technologies offers silicon based ESD diodes in a variety of packages that are tailored for audio interfaces. These ESD diodes have very low dynamic resistance, and therefore, very low clamping voltage to protect the voltage sensitive audio driver IC and other components. Infineon protection technology also inherently has ultra-low leakage current enabling battery powered devices to operate or standby longer, even with many points of protection. These factors, along with the world’s smallest single-line package and multiple-line flow through array solutions, simplify PCB layout and enable exceptional product performance with high reliability. 20 Protection Devices Application Guide for Protection 4.1 ESD Protection for Low Data Rate Interfaces Low data rate interfaces to keypads, buttons, trackballs, and keyboards in portable or mobile equipment are significant entry points for ESD hazards. These circuits are typically powered by less than 5VDC. The ESD5V3L1B device provides a straightforward and effective ESD protection for those interfaces. The ESD8V0R1B and the ESD5V0S5US are also effective in these applications. 1.0x0.6x0.4mm 1.0x0.6x0.39mm 0.6x0.3x0.3mm Keypad * 7 4 1 0 8 5 2 # 9 6 3 R1 R2 R3 C1 C2 C3 C4 ESD Diodes Product Application VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD200-B1CSP0201 Multi purpose ±5.5 ±16 +13/-13@±16 0.2 3 12.5 6.5 1 WLL-2-1 ESD204-B1 02EL / 02ELS General purpose +14/-8 ±18 +28/-27@±16 +35/-35@±30 0.5/0.6 1 -1 17 -23 4 1 TSLP-2-19 TSSLP-2-3 ESD205-B1 02EL8) / 02ELS Control lines Vcc ±5.5 ±20 +10/-12@±16 +13/-17@±30 0.22 0.35 1 2.5 8.5 10 5 1 TSLP-2-19 TSSLP-2-3 ESD5V0S5US General purpose +5.0 ±30 10@16 14@±30 0.25 10 10.5 70 5 SOT363 Notes: 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length); 4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices. 8) Coming soon – Datasheet will be available on our webpage http://www.infineon.com/tvsdiodes Flow Through Layout Recommendation for ESD5V0S5US in SOT363 21 Protection Devices Application Guide for Protection 4.2 ESD Protection for Dual Channel General Purpose e.g. AV I/F Interfaces +Vcc Audio out single ended Audio Amp. Audio_in right ESD strike ESD strike Headset cable ESD Diode -Vcc +Vcc Headset Ear-phone right Charge Pump Low loss Headset con. EMI e.g. 3.5 mm Ferrite jack beat +Vcc Audio_in left Charge Pump Headset Ear-phone left -Vcc Audio Amp. ESD Diode Headset cable ESD strike ESD strike Audio out single ended +Vcc ESD Diodes Product Application VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD205-B1 02EL8) / 02ELS Control lines Vcc ±5.5 ±20 +10/-12@±16 +13/-17@±30 0.22 0.35 1 2.5 8.5 10 5 1 TSLP-2-19 TSSLP-2-3 ESD204-B1 02EL / 02ELS General purpose +14/-8 ±18 +28/-27@±16 +35/-35@±30 0.5/0.6 1 -1 17 -23 4 1 TSLP-2-19 TSSLP-2-3 ESD200-B1CSP0201 Multi purpose ±5.5 ±16 +13/-13@±16 0.2 3 12.5 6.5 1 WLL-2-1 ESD206-B1 02EL / 02ELS / 02V Vcc +5.5 ±30 +9/-9@±16 +11/-11@±30 0.15 ±6 ±9.6 1 TSLP-2-19 TSSLP-2-3 SC79 ESD207-B1 02EL / 02ELS Multi purpose ±3.3 ±30 +7/-7@±16 +9/-9@±30 0.13 8 8.1 1 TSLP-2-19 TSSLP-2-3 Notes: 13 14 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length); 4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices. 8) Coming soon – Datasheet will be available on our webpage http://www.infineon.com/tvsdiodes 22 Protection Devices Application Guide for Protection 5 ESD Protection in RF circuits The RF antenna section can be easily affected by an ESD strike. The ESD strike can damage the Surface Acoustic Wave (SAW) filter or can enter directly the ESD weak RF switch, the RX LNA or the TX amplifier. For TX RF lines the linearity of the TVS diode becomes an issue. Harmonic generation and generation of intermodulation products caused by the ESD diode through the high TX signal power must be avoided. To get the best compromise between linearity and best ESD protection performance Infineon has several RF TVS diodes available. In the following sections, block diagrams for some widely used RF applications are shown as examples how an ESD diode can protect the wireless systems. 5.1 Global Navigation Satellite System (GNSS) ESD protection in mobile phone GNSS application, is also affected with a certain RF power level cross-coupled by the TX antenna. Furthermore the GNS System is demanding a high-linear and intermodulation-product-free RX path to provide best receive sensitivity. GPS: 1575.42 MHz GLONASS: 1598.0625 – 1609.3125 MHz BPF LNA BPF Amp Mixer BPF Signal Processing FEM ESD Diode GNSS Receiver LO TVS Diodes for antenna ESD protection in GNNS systems Product Application VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD105-B102EL/02ELS med. PRF ±5.5 ±25 ±14@±16 ±20@±30 0.35 2 5 8.5 11 0.3 1 TSLP-2-20 TSSLP-2-4 ESD108-B1CSP0201 Q2/CJ14 med. PRF ±5.5 ±25 ±20@±16 ±31@±30 0.75 1 2.5 8.5 11 0.25 1 WLL-2-1 ESD112-B102EL/02ELS med. PRF ±5.3 ±20 ±29@±16 ±44@±30 1.0 1 3 11 15 0.2 1 ESD101-B102EL/02ELS med. PRF AN327 ±5.5 ±12 ±18@±8 ±30@±16 1.5 - - 0.10 1 ESD103-B102EL/02ELS higher. PRF AN327 ±15 ±10 ±36@±8 ±48@±16 1.8 - - 0.10 1 Notes: TSLP-2-20 TSSLP-2-4 TSLP-2-20 TSSLP-2-4 TSLP-2-20 TSSLP-2-4 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length); 4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices. 8) Coming soon – Datasheet will be available on our webpage http://www.infineon.com/tvsdiodes 23 Protection Devices Application Guide for Protection 5.2 Dual-Band (2.4–6.0 GHz) WLAN (IEEE 802.11a/b/g/n) Front-End The Wi-Fi function is one of the most important connectivity functions in notebooks, smartphones and tablet PCs. Wi-Fi according to IEEE 802.11b/g/n at 2.4 GHz and at 5–6 GHz (802.11a/ac/n) is using MIMO technique with several independent RF frontends. ESD protection for this application requires a good linearity and low capacitance of the protection devices to keep good RF matching. 2.4 GHz LNA RX Diplexer Dual-Band WLAN: 2.4 – 6 GHz RXg RXa SPDT Switch 5 GHz LNA TXg Transceiver IC 2.4 GHz PA ESD Diode TX Diplexer Power Detector 5 GHz PA TXa TVS Diodes for WLAN antenna ESD protection Product Application VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD103-B102EL/02ELS higher. PRF AN327 ±15 ±10 ±36@±8 ±48@±16 1.8 - - 0.10 1 TSLP-2-20 TSSLP-2-4 ESD105-B102EL/02ELS med. PRF ±5.5 ±25 ±14@±16 ±20@±30 0.35 2 5 8.5 11 0.3 1 TSLP-2-20 TSSLP-2-4 ESD108-B1CSP0201 Q2/CJ14 med. PRF ±5.5 ±25 ±20@±16 ±31@±30 0.75 1 2.5 8.5 11 0.25 1 WLL-2-1 ESD112-B102EL/02ELS med. PRF ±5.3 ±20 ±29@±16 ±44@±30 1.0 1 3 11 15 0.2 1 ESD101-B102EL/02ELS med. PRF AN327 ±5.5 ±12 ±18@±8 ±30@±16 1.5 - - 0.10 1 Notes: TSLP-2-20 TSSLP-2-4 TSLP-2-20 TSSLP-2-4 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length); 4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices. 8) Coming soon – Datasheet will be available on our webpage http://www.infineon.com/tvsdiodes 24 Protection Devices Application Guide for Protection ESD Protection for Near Field Communication (NFC) ESD Diode EMI-LP filter Tx+ GND antenna matching loop antenna Base band Tx+ Rx Security Controller RF = 13.56 MHz Vsignal vs. |GND| < 18 Vp NFC Transceiver IC 5.3 SIM SWP Main PCB / Top shell Application 1: single-ended antenna EMI-LP filter TxGND antenna matching loop antenna Base band Tx+ Rx Security Controller ESD Diode NFC Transceiver IC RF = 13.56 MHz Vsignal vs. |GND| < 18 Vp +Vsignal vs. –Vsignal < 36V SIM SWP Main PCB / Top shell Application 2: differential antenna ESD Diodes Product Application VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD110-B102EL8) / 02ELS NFC-RF AN244 ±18 ±15 ±28@16 ±34@25 0.60 1 17- 0.3 1 TSSLP-2-4 TSLP-2-20 ESD218-B102EL8) / 02ELS8) NFC / charger protection ±24 ±20 55@16 72@30 1.3 1 40 2 1 TSSLP-2-4 TSLP-2-20 ESD102-U1-02ELS SWP interface +3.3 ±20 8@16 11@30 0.2 1 3 4.8 6.2 0.35 1 TSSLP-2-3 Notes: 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length); 4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices. 8) Coming soon – Datasheet will be available on our webpage http://www.infineon.com/tvsdiodes 25 Protection Devices Application Guide for Protection 6 ESD / Surge Protection Protection of a semiconductor IC against a surge or transient voltage is very critical in systems where AC mains power is involved. One such system is the Ethernet, the most used system for network communications directly from the backbone to servers to desktops. Ethernet has evolved from 10 Mbps data-rates to 1000 Mbps Gigabit Ethernet (1000base-T). On the horizon, the 10 Gbps Ethernet (10GBase-T) is visible for back office applications. Below is a simplified illustration of an Ethernet network. As shown graphically, there can be direct or indirect ESD strikes and surges affecting the ESD sensitive devices of any equipment on the network with destructive consequences resulting in reduction of the quality of service. Surges can be generated by a fault in the AC mains, switching of capacitors, or lightning. Surges can directly strike the RJ45 connector or they can be induced on the cable by electro-magnetic fields. Apart from surges on the AC mains, the system also needs to be protected from other causes of ESD strikes like human touch during installation, maintenance and normal operation. Emerging nations such as China have introduced strict regulations on the protection of Ethernet systems from surges due to the fluctuations in AC mains power. This is due to relatively unstable power distribution networks found in China and other countries. ESD and surge strikes can both enter equipment through the RJ45 connector where they must pass through the standard Ethernet quad-transformer before hitting the transceiver IC. Direct injected ESD and Surge strikes Induced surges File Server Gigabit Ethernet Adapter Card RJ45 Jack for Gigabit Ethernet Connection Gigabit EthernetSwitch Direct injected ESD and Surge strikes Workstations Figure 10 Ethernet structure The Gigabit Ethernet cable has four twisted differential pairs called “lanes”, each delivering full-duplex data. Each lane is capable of transferring data at 250 Mbps. Because of PAM (Pulse Amplitude Modulation) each symbol transferred requires 2 bits. 26 Protection Devices Application Guide for Protection Therefore, fundamental transfer frequency is 62.5 MHz requiring a CAT5e or better cable (fT = 100 MHz minimum). The high data rate imposes high signal quality challenges to maintain integrity of the PAM waveform, especially over long link distance. Complete ESD and Surge robustness of the system is accomplished as follows: 1. Primary Side Protection: The primary side, which is comprised of the RJ45 connector, transformer and PCB, can be protected against very high voltage strikes using gas tubes which are triggered at a certain voltage level to short the strike energy to ground. 2. Secondary Side Protection: The secondary side, which is usually connected to a sensitive semiconductor IC such as an Ethernet PHY, requires a precise ESD and surge protection network to assure complete protection from any damage caused by secondary side induced surge pulse. To maintain maximum signal integrity on both the primary and secondary sides, the protection devices must have very low capacitance. 6.1 ESD Requirements: An IEC61000-4-2 level-4 ESD protection circuit should be able to handle ESD strikes of up to 8 kV contact discharge and 15 kV air discharge according to the standard. However, more and more Infineon customers are requesting 15 kV contact discharge ESD robustness in order to meet quality of service requirements, reduce repair costs and cost of ownership, and to increase the customer’s satisfaction with the overall experience with the equipment. 6.2 Surge Requirements: Surge waveforms according to the IEC 61000-4-5 standard are defined for a short circuit case as either 8/20 µs or 5/320 µs. For a DUT (Device under Test) acting as an open circuit, the relevant waveform characteristics defined in the standard are 1.2/50 µs or 10/700 µs. Test-current peak value is adjusted according to the intended test-class. This document focuses on the Chinese requirements for surge protection shown below. 6.2.1 Line-to-Line (L/L) Case In this case, the system is seen as a short circuit by the surge source. The system has to be protected against secondary side induced surge currents and surge voltages. The surge waveform is defined in the IEC61000-4-5 standard as a 5/320 µs current pulse at 25 A for a 1 kV test surge and at 50 A for a 2 kV test surge which are injected into the system on primary side (RJ45 connector side). The signal path and the return path for the current surge belong to the same lane. This surge acts in differential mode and is therefore transferred to the secondary side of the magnetic transformer based on the law L*dIsurge/dt. This induced voltage depends on the rise time of the primary L/L surge pulse, and the frequency response and high current saturation of the magnetic transformer. 27 Protection Devices Application Guide for Protection IEC61000-4-5 surge generator Linepair #3 Linepair #4 primary side primary side secondary side Magnetic module – one lane Gigabit Ethernet Transceiver (PHY) Infineon TVS diode ESD/surge Linepair #2 Ethernet cable Twisted Pair#1 1:1 RJ45 Ethernet connector Surge current 5/350us 1kV (25A), 2kV(50A) RX1 1:1 TX1 75 Ohm Res each lane one common 2nF cap Gas-tube is NOT triggered at „Line to Line“ ESD/surge strike Res Spark gap e.g. gas tube Figure 11 Internal ESD protection Line to Line test configuration for Ethernet For a 5/320 µs primary side surge current, the induced surge pulse on secondary side is strongly compressed in time down to a total duration of much less than 20 µs. Secondary side generated short circuit peak current is less than 20 A even if the primary side L/L surge significantly exceeds 50 A (where the 50 A is related to the 2 kV test surge requirement). Surge pulse shape and amplitude injected on the primary side is completely different with respect to the secondary side induced surge pulse. For the L/L system level surge test, an ESD diode on the secondary side can be used, because the surge handling capability requirement is lower compared to the primary side injected surge pulse protection requirement. Much more important to the survival of the Ethernet PHY is the clamping voltage of the ESD diode in the case of a system level surge event. The lower the ESD diode clamping voltage, the lower the surge stress on the PHY. 6.2.2 Line-to-Ground (L/GND) Case In this case, the system is seen as an open-circuit by the surge source. The system needs to be protected against high voltage levels between the signal line and GND. The required surge waveform in the IEC6100-4-5 is defined at 10/700 µs, with a peak voltage level of 4 kV or 6 kV. This surge must be handled on the primary side without destructive parasitic air discharge breakthrough to the secondary side. A common solution is to use a gas-discharge tube on the primary side to reduce the surge voltage level to a safe level for the primary side and eliminate breakthrough air discharge damage on the secondary side. Once the gas tube is triggered, the system transforms into a short circuit which translates the surge waveform into a current pulse of 5/300 µs with 100 A or 150 A respectively for a 4 kV or 6 kV surge strike. 28 Protection Devices Application Guide for Protection IEC61000-4-5 surge generator primary side primary side Magnetic module – one lane Linepair #1 Infineon TVS diode ESD/surge Gigabit Ethernet Transceiver (PHY) RX1 1:1 Surge voltage 10/700us 4kV...6kV, => Surge current 5/320us 100A...150A RJ45 Ethernet connector Linepair #2 Ethernet cable Twisted Pair secondary side 1:1 Linepair #4 75 Ohm Res each lane one common 2nF cap Linepair #3 surge voltage drop Gas-tube is triggered at „Line to GND“ ESD/surge strike Res Spark gap e.g. gas tube TX1 Internal ESD protection 10/700us Voltage wave => 5/320us Current wave surge voltage drop till spark-gap is triggered Figure 12 Line to GND test configuration for Ethernet For system protection against ESD strikes only, the recommended Infineon device is the ESD5V5ULC as shown in table below. TVS3V3L4U is the right choice if the system is required to be protected against both ESD and surge events as required by the Chinese government regulations. 29 Protection Devices Application Guide for Protection 6.3 ESD Surge Protection for Gigabit Ethernet 1:1 5 3 4 Res TVS3V3L4U 6 2 Res 1:1 Quad Transformer Ethernet cable Twisted Pair RJ45 Ethernet connector 1:1 Gigabit Ethernet Transceiver (PHY) 1 Ethernet cable Twisted Pair 1:1 1:1 6 2 5 3 4 Res TVS3V3L4U 1 Ethernet cable Twisted Pair 1:1 Res 1:1 1:1 ESD ESD Diodes Product Application VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package TVS3V3L4U GBit Ethernet +3.3 ±25 5.8@16 7.1@30 0.1 20 8 2.0 4 SC74 ESD300-B1-02LRH GBit Ethernet +3.3 ±30 7.5@16 12.5@30 0.2 20 1 1 TSLP-2-17 Notes: 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length); 4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices. Flow Through Layout Recommendation for TVS3V3U4ULC in SC74 30 Protection Devices Application Guide for Protection 6.4 ESD and Transient Protection for VDSL, ADSL & Other Broadband Applications Vcc 4 Primary Protection DSL Line Driver TIP 3 2 1 DSL 70 RING ESD Diodes Notes: Product Application VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package DSL70 Broadband +50 ±15 2.7@16 4.0@30 0.1 27 6 2.5 2 SOT143 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length); 4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices. 31 Protection Devices Application Guide for Protection 7 ESD and ESD/EMI Interface Protection In today’s electronics, being faster, smaller and smarter creates profitability by enabling new and better applications. The race to pack more and more high-speed functions in a smaller space accelerates miniaturization roadmaps. However, the downscale of semiconductor chips together with the increase of doping levels results in a dramatic reduction of the thin gate oxide layer and the width of the pn-junction in semiconductor chips. This, in combination with greater circuit population, increases the susceptibility of the semiconductor chip to ESD. The subsequent failures of the electronic equipment can be noticed as hard failures, latent damage or temporary malfunction. Hard failures are easier to spot, and in general require the failed device to be replaced. In the best case the failure will be detected before the equipment leaves the factory and customers will never receive it. Failures leading to temporary malfunction of equipment or latent failures are quite common and very difficult to detect or trace in the field. Temporary malfunctions may go unreported but can result in negative customer impressions as the user may need to reset the equipment. A product recall for swapping or repairing due to ESD failures may cause the company a cost several times higher than the cost of the device itself. An efficient system design normally includes the implementation of a shielded chassis in order to minimize ESD risks. Nevertheless, ESD strikes represent a permanent threat to device reliability as they can easily find a way to bypass the shielded chassis and be injected into the IC/ASICs. Connectors and antennas exposed to the outside world are possible entry points of electrostatic discharges generated by end users. The only way to ensure stable operation and maximum reliability at the system level is to ensure that equipment is properly protected against electrostatic discharge and transients by an external protection device. Infineon’s Value Proposition Improve ESD immunity at system level by providing first-class protection beyond IEC61000-4-2 level 4 standard. - Superior multi-strike absorption capability. - Safe and stable clamping voltages to protect even the most sensitive electronic equipment. - Protection devices that fully comply with high-speed signal quality requirements. - Array solutions that boost space saving in the board and reduce part count. - Easy-to-use single devices for space-constrained applications. - Discrete components that drain extremely low leakage currents and help to extend battery duration. - Packages enabling easy PCB layout. 32 Protection Devices Application Guide for Protection 7.1 Interface Protection with Discrete TVS Protection Diodes Infineon offers various high performance types of discrete TVS protection devices for mobile phone applications to prevent our customers’ mobile phones from ESD attacks. Following is a short overview of the available TVS protection devices from Infineon for various RF and digital interfaces of mobile phones to the external world. To improve EMI characteristic of the interfaces a resistor can be placed between the TVS diode and the IC/IO. On one hand ESD protection for the IC/IO is improved, on the other hand the TVS diode capacitance in combination with an external ESD resistor and the IC/IO capacitance creates a low-pass filter structure “CRC-pi structure”. Interface protection with discrete ESD TVS diodes 33 Protection Devices Application Guide for Protection 7.1.1 General Purpose TVS Diodes e.g. for Human Interface Devices, Audio Ports and SIM-Card / µSD card ESD Protection In a modern mobile phone there are a lot of access points open to external for ESD strikes to reach the inner PCB, such as the charging port, audio ports (line out, headset jack) and data interfaces (USB). Another very severe path for the ESD strike is bottoms, air-gaps in the enclosure or the microphone/speaker. Often the point of entrance for the ESD strike is not obvious. To provide proper ESD protection for the inner print circuit board, it is mandatory to place fast responding TVS protection diodes at dedicated locations. Depending on the position to be protected, for example where the signal frequency is low and therefore device capacitance does not matter, general purpose TVS diodes can be used. They are listed in the table “TVS ESD Diodes for general purpose application”. For high speed data lines dedicated low capacitance TVS diodes must be used to avoid any impact on signal integrity. Please refer to chapter “High-Speed Digital Interface Switching and Protection” regarding these low capacitance TVS diodes. TVS ESD Diodes for General Purpose Application Product Application VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] Rdyn3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package ESD204-B1 02EL / 02ELS General purpose +14/-8 ±18 +28/-27@±16 +35/-35@±30 0.5/0.6 1 -1 17 -23 4 1 TSLP-2-19 TSSLP-2-3 ESD5V3L1B-02LRH discontinued General purpose ±5.3 ±20 10/-12@±16 13/-17@±30 0.22 0.35 1 2.5 8.5 10 5 1 TSLP-2-17 ESD205-B1 02EL8) / 02ELS General purpose ±5.3 ±20 10/-12@±16 13/-17@±30 0.22 0.35 1 2.5 8.5 10 5 1 TSLP-2-19 TSSLP-2-3 ESD5V0S5US General purpose +5.0 ±30 ±10@±16 ±14@±30 0.25 10 10.5 70 5 SOT363 ESD206-B1 02EL / 02ELS / 02V Vcc ±5.5 ±30 +9/-9@±16 +11/-11@±30 0.15 ±6 ±9.6 1 TSLP-2-19 TSSLP-2-3 SC79 ESD207-B1 02EL / 02ELS Multi purpose ±3.3 ±30 +7/-7@±16 +9/-9@±30 0.13 8 8.1 1 TSLP-2-19 TSSLP-2-3 Notes: 13 14 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage for 100 ns pulse length; 3) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length); 4) Maximum peak pulse current according to IEC61000-4-5 (8/20 μs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 μs); 6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our webpage www.infineon.com/protection/low-cap.esd-diodes for alternative devices. 8) Coming soon – Datasheet will be available on our webpage http://www.infineon.com/tvsdiodes 34 Protection Devices Application Guide for Protection 7.2 Interface Protection with Integrated ESD/EMI Devices With increasing number of wireless functions integrated into the mobile phones, we have to have a look on immunity against ESD, and also on robustness against EMI. This is mandatory to ensure the functionality of the mobile phones. For application where a high number of I/Os must be protected regarding ESD and EMI a smart integration of the required protection features keeps the PCB space small and the layout easy. SD and µSD card provides six high speed lines and one Vcc line. In a lot of applications these lines are exposed to ESD events during the mobile phone use or especially during the insertion / remove of the SD / µSD card. State of the art SD / µSD card are working in UHS-I Mode, resulting in 208 MHz clock rate. To avoid any impact on signal integrity (SI) or rise/fall time, the device capacitance must be minimized. The required EMI protection is provided by the EMI resistor in conjunction with the load capacitance present in the SD / µSD link. The Infineon BGF148 bases on a “PI” structure with a 20 Ohm EMI resistor. Line capacitance is about 1 pF. In combination with the load capacitance of 10 pF max (according µSD-card spec.) the EMI filter response is generated. BGF148 DAT2 µSD Card Connector µSD Card Vcc DAT3 DAT2 DAT3 CMD CMD Vcc Vcc CLK CLK 15kV 2kV CMD DAT0 DAT1 LPF GND GND DAT2 DAT0 DAT0 DAT3 DAT1 DAT1 CLK Flash Controller IC Integrated ESD/EMI devices dedicated for HS and UHS I SIM Card Integrated ESD/EMI Protection Device Notes: Product Application VRWM [V] ESD1) [kV] VCL2) [VCL]@[A] RESD3) [Ω] IPP4) [A] VCL5) [V] CT6) [pF] Protected Lines Package BGF148 (µ)SD Card Interface ±5.5 ±15 8.5@1 9@16 20 - - 1.2 7 TSNP-14-2 1) Electrostatic discharge as per IEC61000-4-2, contact discharge; 2) TLP clamping voltage @ output, for input 100 ns pulse length; 3) ESD resistor between input and output TVS diode; 4) Maximum peak pulse current according to IEC61000-4-5 (8/20 μs); 5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 μs); 6) Typical line capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND; 7) Please visit our webpage www.infineon.com/protection/low-cap.esd-diodes for alternative devices. 35 Protection Devices Application Guide for Protection Abbreviations Abbr. Terms Abbr. Terms ADSL Asymmetric Digital Subscriber Line MICP Microphone Positive AN Application Note MIPI Mobile Industry Processor Interface ASIC Application Specific Integrated Circuit MM Card Multimedia Card AUX Auxiliary MMIC Monolithic Microwave Integrated Circuit AV I/F Interface Audio Video Intermediate Frequency Interface NFC Near-Field Communication (13.56 MHz) PAM Pulse Amplitude Modulation PCB Printed Circuit Board PD Programming Data PHY Physical Layer RF Radio Frequency RoHS Restriction of Hazardous Substances RPD RF and Protection Devices RPP Reserve Polarity Protection RST Reset Rx Receive SATA Serial Advanced Technology Attachment SC Semiconductor Package SCL Serial Clock Line SDA Serial Data Line (µ)SD Card (Micro)Secure Digital Memory Card SIM Card Subscriber Identity Module Card SOT Small Outline Transistor Package BB Baseband BER Bit Error Rate BPF Band Pass Filter CEC Consumer Electronics Control CLK Clock CMD Command DAT Data DC Direct Current DPDT Double Pole Double Throw DSL Digital Subscriber Line DUT Device under Test DVI Digital Visual Interface EMI Electromagnetic Interference ESD Electro-Static Discharge FM Frequency Modulation (76 – 108 MHz) GND Ground GPS Global Positioning System (1575.42 MHz) HBM Human Body Model SPDT Single Pole Double Throw HDMI High-Definition Multimedia Interface SWP Single Wire Protocol HID Human Interface Device TLP Transmission Line Pulse High Speed (480 Mbit/s) / Full Speed (12 Mbit/s) / Low Speed (1.5 Mbit/s) TMDS Transition Minimized Differential Signaling HS / FS / LS TR Technical Report TRX Transceiver HSMM High-Speed Multimedia TSFP Thin Small Flat Package HSYNC Horizontal Synchronization TSSLP Thin Super Small Leadless Package IC Integrated Circuit TV Television IEC International Electrotechnical Commission TVS Transient Voltage Suppression I/O Input / Output Tx Transmit LCD Liquid Crystal Display USB Universal Serial Bus L/GND Line-to-Ground VDSL Very High Speed Digital Subscriber Line L/L Line-to-Line VSYNC Vertical Synchronization LNA Low Noise Amplifier VMIC Voltage Microphone LPF Low Pass Filter WLAN Wireless Local Area Network MHL Mobil High-definition Link WLP Wafer Level Package ML Main Lane MICN Microphone Negative 36 Protection Devices Application Guide for Protection Alphanumerical List of Symbols Symbol Term Unit BW Bandwidth [GHz] CT Total Diode capacitance [pF] IF Forward current [mA] IPP Maximum peak pulse current [A] IR Reserve current [uA] IL Insertion loss [dB] P-0.1dB 0.1dB compression point [dBm] Rdyn Dynamic Resistance [Ω] rF Differential forward resistance [Ω] VBR Breakdown voltage [V] VCL Clamping voltage [V] Vctrl Digital control voltage [V] Vdd DC supply voltage [V] VF Forward voltage [mV] VR Reverse voltage [V] VRWM Reverse working voltage [V] τL Storage time [ns] τrr Reverse recovery time [ns] 37 Protection Devices Application Guide for Protection Package Information Package (JEITA-code) X L×W×H PIN-Count All Dimensions in mm All products are available in green (RoHS compliant). 1.6 × 0.8 × 0.55 2 2.0 × 2.1 × 0.9 2 1.0 × 0.6 × 0.39 4 2.0 × 2.1 × 0.9 2 1.0 × 0.6 × 0.31 TSLP-2-17 1.3 × 0.8 × 0.39 2.3 × 1.5 × 0.4 2 0.58 × 0.28 × 0.15 TSSLP-2-4 ( - ) 2 0.62 × 0.32 × 0.31 6 2.0 × 2.1 × 0.9 2 1.0 × 0.6 × 0.31 3 3 1.4 × 1.26 × 0.39 WLL-2-1 ( - ) 38 SOT143 (SC-61) 4 1.2 × 1.2 × 0.55 1.0 × 0.6 × 0.39 2 2.3 × 1.0 × 0.31 0.62 × 0.32 × 0.31 TSLP-3-7 ( - ) 3 TSLP-9-1 ( - ) 9 2.9 × 2.4 × 1.0 TSSLP-2-1 ( - ) TSLP-2-7 ( - ) 2 TSLP-7-6 ( - ) 7 2.9 × 2.4 × 1.1 TSFP-3 ( - ) TSLP-2-20 TSLP-7-4 ( - ) 7 2.5 × 1.25 × 0.9 SOT363 (SC-88) TSLP-2-19 TSLP-5-2 ( - ) 5 2 SOT343 (SC-82) SOT323 (SC-70) 3 1.7 × 0.8 × 0.7 SOT23 ( - ) SOD323 (SC-76) SCD80 (SC-80) SC79 (SC-79) 2 1.0 × 0.6 × 0.39 TSSLP-2-3 ( - ) 2 0.62 × 0.32 × 0.31 Protection Devices Application Guide for Protection Support Material Data Sheets / Application Notes / Technical Reports www.infineon.com/rfandprotectiondevices Products: - RF CMOS Switches RF MMICs RF Transistors RF Diodes PIN Diodes Schottky Diodes Varactor Diodes ESD/EMI Protection Devices www.infineon.com/rfswitches www.infineon.com/rfmmics www.infineon.com/rftransistors www.infineon.com/rfdiodes www.infineon.com/pindiodes www.infineon.com/schottkydiodes www.infineon.com/varactordiodes www.infineon.com/ESDdiodes Brochures: - Selection Guide www.infineon.com/rpd_selectionguide - Application Guide for Mobile Communication www.infineon.com/rpd_appguide_mobile - Application Guide for Consumer Applications www.infineon.com/rpd_appguide_consumer - Application Guide for Industrial Applications - Application Guide for Protection - ESD Protection Solutions – Consumer and Wireless Communication - GPS Front-End Components for Mobile and Wireless Applications www.infineon.com/rpd_appguide_industrial www.infineon.com/rpd_appguide_protection www.infineon.com/ESD.brochure www.infineon.com/gps Sample Kits www.infineon.com/rpdkits Evaluation Boards For more information please contact your sales counterpart at Infineon. 39 Infineon_RPD_AppGuide_Mobile_Communication_2014_Final_ver1_NEW.pdf 79 06.04.2014 17:50:36 Ask Infineon. 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With respect to any examples or hints given herein, any typical values stated herein and/ or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.