NPN Dual NPN high voltage transistors in a single package R DB805D MAIN CHARACTERISTICS IC 4A VCEO 400V PTOT Tamb = 25 °C single transistor 3W PTOT Tcase = 25 °C single transistor 45W Package业 业 业 性性市不荧 商热理种在 DIP-8 APPLICATIONS Compact fluorescent lamp (CFL) 220 V mains Electronic ballast for fluorescent lighting FEATURES 业 Internal schematic diagram High breakdown voltage 不 不 不 不 不 Low VCE(sat) Fast switching speed Simplified circuit design Reduced component count ORDER MESSAGE Order codes Marking DB805D DB805D 201311A Halogen Free NO Package Packaging DIP-8 Tube 1/5 DB805D R ABSOLUTE RATINGS (Tc=25 ) Parameter Symbol Value Unit — Collector- Emitter Voltage VBE=0 VCES 700 V — Collector- Emitter Voltage IB=0 VCEO 400 V — Emitter-Base Voltage VEBO 9 V Collector Current IC 4 A Collector Current pulse ICP 8 A Base Current DC 不 IB 2 A Base Current pulse IBP 4 A Total Dissipation ( Tamb = 25 °C single transistor ) PTOT 3 W Total Dissipation ( Tcase = 25 °C single transistor ) PTOT 45 W Total Dissipation (TO-220C/262/263) PC 75 W Junction Temperature Tj 150 Storage Temperature Tstg pu饱se DC 不 5高s -55~+150 不不不Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%. ElECTRICAL CHARACTERISTIC Parameter Tests conditions Value(min) Value(typ) Value(max) Unit V(BR)CEO IC=10mA,IB=0 400 - - V V(BR)CBO IC=1mA,IB=0 700 - - V V(BR)EBO IE=1mA,IC=0 9 - - V ICBO VCB=700V, IE=0 - - 100 µA ICEO VCE=400V,IB=0 - - 50 µA IEBO VEB=9V, IC=0 - - 10 µA Hfe(1) VCE =10V, 20 - 30 Hfe(2) VCE =5V, IC=2A 5 - - VCE(sat) IC=2A, IB=0.4A - - 1.0 V VBE(sat) IC=2A, IB=0.5A - - 1.8 V - - 0.7 µS - - 5 µS 4 - - MHz tf VCC=24V IC=500mA IC=2A,IB1=-IB2=0.4A ts fT VCE=10V, IC=0.5A THERMAL CHARACTERISTIC Parameter 商 Value(min) Value(max) Unit 在 Thermal Resistance Junction Ambient (single transistor) ( Symbol ) Thermal Resistance Junction Case (single transistor) 201311A Rth(j-c) - 42 ℃/W Rth(j-c) - 2.7 ℃/W 2/5 DB805D R ELECTRICAL CHARACTERISTICS (curves) VBE sat - IC VBEsat hFE hFE – IC PC-TC POWER DERATING FACTOR VCEsat VCE(sat)- IC 201311A 3/5 DB805D R PACKAGE MECHANICAL DATA Unit mm DIP-8 mm 201311A A 3.71-4.31 A1 >0.51 A2 3.20-3.60 B 0.38-0.57 B1 1.47-1.57 C 1.524(Typ.) D 9.00-9.40 E 6.20-6.60 E1 7.32-7.92 e 2.54(Typ.) L 3.00-3.60 E2 8.40-9.00 4/5 DB805D R NOTE 业 1. 1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don’t be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this. specification sheet and is subject to change without prior notice. 2. 3. 4. CONTACT JILIN SINO-MICROELECTRONICS CO., LTD. ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel 86-432-64678411 Fax 86-432-64665812 Web Site www.hwdz.com.cn MARKET DEPARTMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64675588 64675688 64678411-3098/3099 Fax: 86-432-64671533 99 132013 86-432-64678411 86-432-64665812 www.hwdz.com.cn 99 132013 86-432-64675588 64675688 64678411-3098/3099 : 86-432-64671533 Appendix Date Last Rev. 2013-11-13 201311A Revision History New Rev. 201311A Description of Changes 不 5/5