TRIACS R T0410NF MAIN CHARACTERISTICS IT(RMS) 4A VDRM 800V IGT 10mA Package Description 1 MT1 2 MT2 G Pin 1 2 3 APPLICATIONS AC switching Phase control 不 T系T系-性性市电F FEATURES Glass-passivated mesa chip for reliability and uniform 不 Uniform gate trigger currents in three quadrants 不 耗o疑脉 不 RoHS products ORDER MESSAGES 不 不 不 不 Order code T0410NF-O-HF-N-B 不不不不 不 Marking T0410NF 不不不不 Package不 不 TO-220HF 不不不不不不 不 Packaging Tube 不 Device Weight 2.00g typ 不GENERAL DESCRIPTION 致市或引市管理 dV/dt dI/dt TO-220HF 不 T0410NF is Glass passivated three quadrant triac, designed for high performance full-wave ac control applications where high static and dynamic dV/dt and high dI/dt can occur. They are specially recommended for use on inductive loads such as motor control circuits. Available packages is TO-220HF. 201406A 1/6 T0410NF R ABSOLUTE RATINGS (TC=25 Parameter Repetitive peak off-state voltage On-state RMS current Nonrepetitive surge peak on-state current Symbol Condition Value Unit ±800 V full sine wave 4 A full sine wave ,t=20ms 25 A full sine wave ,t=16.7ms 27 A t=10ms 3.1 A2s 100 A/μs VDRM IT(RMS) ITSM 2 It Repetitive rate of rise of on-state current after triggering ) dI/dt ITM=6A, IG=0.2A, dIG/dt=0.2A/μs Peak gate current IGM 2 A Peak gate voltage VGM 5 V Peak gate power PGM 5 W 0.5 W Average gate power PG(AV) Storage temperature Tstg -40~150 Operation junction temperature TVJ 125 201406A over any 20ms period 2/6 T0410NF R ELECTRICAL CHARACTERISTIC (TC=25℃ ℃) Parameter Symbol Condition Min Typ Max Unit - - 0.5 mA - 1.4 1.7 V MT1(-),MT2(+),G(+) - - 10 mA MT1(-),MT2(+),G(-) - - 10 mA MT1(+),MT2(-),G(-) - - 10 mA MT1(-),MT2(+),G(+) - 0.7 1.5 V MT1(-),MT2(+),G(-) - 0.7 1.5 V MT1(+),MT2(-),G(-) - 0.7 1.5 V - - 12 mA MT1(-),MT2(+),G(+) - - 12 mA MT1(-),MT2(+),G(-) - - 18 mA MT1(+),MT2(-),G(-) - - 12 mA 30 - - V/μs - 2 - μs Min Typ Max Unit 5.5 /W VDM=800V, Tj=125 , Peak Repetitive Blocking IDRM gate open Current Peak on-state voltage Gate trigger current Gate trigger voltage Holding current Latching current Rise of off- state voltage Gate controlled turn-on time VTM IGT VGT IH IL dV/dt tgt ITM=5A VDM=12V, RL=100Ω VDM=12V, RL=100Ω VDM=12V, IGT=0.1A VDM=12V, IGT=0.1A VDM=67% VDRM(MAX), Tj=125 , gate open ITM=12A, VDM=VDRM(MAX), IG=0.1A, dIG/dt=5A/μS THERMAL CHARACTERISTIC Parameter Thermal resistance junction to heatsink Symbol Condition Rth(j-h) full cycle(TO-220HF) ELECTRICAL ISOLATION Parameter Isolation voltage 201406A Symbol Condition VISOL 1 minute, leads to mounting tab TO-220HF Value Unit 2000 V 3/6 T0410NF R ELECTRICAL CHARACTERISTICS (curves) Ptot- IT(RMS) 不 IT(RMS) - Tmb IT RMS Ptot(W)不 不 (A)不 不 不 IT RMS 不 A 不 Th(℃ ℃) 不 不 ITSM - tp 不 不 IT(RMS)- ts IT RMS ITSM(A) (A) 不 tp(ms) ts(s) VTM - IT IT(A) ℃) IGT(Tj)/IGT(25℃ IGT(Tj)/IGT(25℃ ℃) - Tj Tj(℃ ℃) 201406A VTM(V) 4/6 T0410NF R PACKAGE MECHANICAL DATA TO-220HF 201406A Unit mm 5/6 T0410NF R NOTE 1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering, please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don’t be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. 1. 2. 3. 4. CONTACT 99 132013 86-432-64678411 86-432-64665812 www.hwdz.com.cn 99 132013 86-432-64675588 64675688 64678411 86-432-64671533 Appendix Date 201406A JILIN SINO-MICROELECTRONICS CO., LTD. ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel 86-432-64678411 Fax 86-432-64665812 Web Site www.hwdz.com.cn MARKET DEPARTMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64675588 64675688 64678411 Fax: 86-432-4671533 Revision History Last Rev. New Rev. Description of Changes 6/6