RENESAS HSU277

HSU277
Silicon Epitaxial Planar for UHF/VHF tuner Band Switch
REJ03G0111-0800Z
(Previous: ADE-208-018G)
Rev.8.00
Oct.08.2003
Features
• Low forward resistance. (rf = 0.7 Ω max)
• Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information
Type No.
Laser Mark
Package Code
HSU277
3
URP
Pin Arrangement
1
3
Cathode mark
Mark
2
1. Cathode
2. Anode
Rev.8.00, Oct.08.2003, page 1 of 4
HSU277
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Reverse voltage
VR
35
V
Power dissipation
Pd
150
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−45 to +125
°C
Operation temperature
Topr
−20 to +60
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse voltage
VR
35
—
—
V
IR = 10 µA
Forward voltage
VF
—
—
1.0
V
IF = 10 mA
Reverse current
IR
—
—
50
nA
VR = 25 V
Capacitance
C
—
—
1.2
pF
VR = 6 V, f = 1 MHz
Forward resistance
rf
—
—
0.7
Ω
IF = 2 mA, f = 100 MHz
Rev.8.00, Oct.08.2003, page 2 of 4
HSU277
10–2
10–6
10–3
10–7
10–4
10–8
Reverse current IR (A)
Forward current IF (A)
Main Characteristic
10–5
10–6
10–7
10–8
10–9
10–9
10–10
10–11
10–12
0
0.2
0.4
0.6
0.8
10–13
1.0
0
10
20
30
40
50
Forward voltage VF (V)
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Fig.2 Reverse current vs. Reverse voltage
10
2.5
f = 100MHz
f = 1MHz
Forward resistance rf (Ω)
Capacitance C (pF)
2.0
1.0
1.5
1.0
0.5
0.1
1.0
10
40
0
10–4
10–3
10–2
Reverse voltage VR (V)
Forward current IF (A)
Fig.3 Capacitance vs. Reverse voltage
Fig.4 Forward resistance vs. Forward current
Rev.8.00, Oct.08.2003, page 3 of 4
HSU277
Package Dimensions
As of January, 2003
Rev.8.00, Oct.08.2003, page 4 of 4
0.9 ± 0.15
0 – 0.10
1.25 ± 0.15
1.7 ± 0.15
2.5 ± 0.15
0.3 ± 0.15
Unit: mm
Package Code
JEDEC
JEITA
Mass (reference value)
URP
Conforms
—
0.004 g
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