IT124 SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS FEATURES Direct Replacement for Intersil IT124 Pin for Pin Compatible C1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) IC Collector-Current 10mA Maximum Temperatures Storage Temperature Range -65°C to +150°C Operating Junction Temperature -55°C to +150°C Maximum Power Dissipation ONE SIDE B1 E1 E2 B2 BOTH SIDES Device Dissipation TA=25°C 250mW 500mW Linear Derating Factor 2.3mW/°C 4.3W/°C TOP VIEW 26 X 29 MILS ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC IT124 BVCBO Collector-Base Breakdown Voltage 2 MIN. V IC = 10µA IE = 0A BVCEO Collector to Emitter Voltage 2 MIN. V IC = 10µA IB = 0A BVEBO Emitter-Base Breakdown Voltage 6.2 MIN. V IE = 10µA IC = 0A NOTE 2 BVCCO Collector to Collector Voltage 50 MIN. V ICCO = 10µA IB = IE = 0A hFE DC Current Gain 1500 MIN. IC = 1µA VCE = 1V hFE DC Current Gain 1500 MIN. IC = 10µA VCE = 1V VCE(SAT) Collector Saturation Voltage 0.5 MAX. V IC = 1mA IB = 0.1mA ICBO Collector Cutoff Current 100 MAX. pA IE = 0 VCB = 1V IEBO Emitter Cutoff Current 100 IC = 0 VEB = 3V Output Capacitance 2 MAX. MAX. pA COBO pF IE = 0 VCB = 1V 2 MAX. pF VCC = 0 ±500 MAX. nA VCCO = ±50V IB = IE = 0A 100 MIN. MHz IC = 100µA VCE = 1V 3 MAX. dB IC = 10µA VCE = 3V RG = 10 KΩ f=1KHz 3 3 CC1C2 Collector to Collector Capacitance IC1C2 Collector to Collector Leakage Current fT NF Current Gain Bandwidth Product Narrow Band Noise Figure 3 3 UNITS CONDITIONS BW = 200Hz Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201156 9/27/2012 Rev#A4 ECN# IT124 MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC IT124 │VBE1-VBE2│ Base Emitter Voltage Differential 2 TYP. mV 5 MAX. mV 5 TYP. 15 0.6 ∆│(VBE1-VBE2)│/∆T Base Emitter Voltage Differential Change with Temperature │IB1-IB2│ Base Current Differential 3 UNITS CONDITIONS IC = 10 µA VCE = 1V µV/°C IC = 10 µA VCE = 1V MAX. µV/°C T = -55°C MAX. nA IC = 10 µA to +125°C VCE = 1V C1 C2 B1 B2 E1 E2 N/C N/C 0.210 0.170 C1 C2 B1 B2 E1 E2 N/C N/C Note: All Dimensions in inches NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired 2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA. 3. Not a production test. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201156 9/27/2012 Rev#A4 ECN# IT124