LS3550 SERIES MONOLITHIC DUAL PNP TRANSISTORS FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL SOT-23 TOP VIEW TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -55 to +150 °C Operating Junction Temperature -55 to +150 °C Maximum Power Dissipation Continuous Power Dissipation 1 6 2 5 3 4 TOP VIEW C1 E1 C2 TO-71 PDIP SOIC TOP VIEW TOP VIEW TOP VIEW SOIC PDIP TBD Maximum Currents Collector Current TO-78 *SOT-23 2mV TRACKING1 50mA C1 1 8 C2 C1 1 8 C2 B1 2 7 B2 B1 2 7 B2 E1 3 6 E2 E1 3 6 E2 NC 4 5 NC NC 4 5 NC Maximum Voltages Collector to Collector Voltage 60V MATCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) LS3550A LS3550B LS3550C SYMBOL CHARACTERISTIC VBE1 VBE2 Base to Emitter Voltage Differential 2 5 10 mV IC = -100µA, VCE = -5V VBE1 VBE2 Base to Emitter Voltage Differential Change with Temperature 3 5 15 µV/°C IC = -100µA, VCE = -5V TA = -40°C to +85°C IB1 IB2 Base Current Differential 10 10 10 nA IC = -500µA, VCE = -5V IB1 IB2 Base Current Differential Change with Temperature 0.5 0.5 1.0 nA/°C IC = -500µA, VCE = -5V TA = -40°C to +85°C Current Gain Differential 10 10 15 % LS3550B LS3550C ΔT ΔT hFE1 hFE2 MIN MAX MIN MAX MIN MAX UNIT CONDITIONS IC = -1mA, VCE = -5V ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC LS3550A MIN MAX MIN MAX MIN MAX UNIT CONDITIONS BVCBO Collector to Base Breakdown Voltage -45 -40 -20 15 IC = -10µA, IE = 0A BVCEO -40 -20 16 IC = -5mA, IB = 0A ±60 ±60 BVEBO Collector to Emitter Breakdown Voltage -45 Collector to Collector Breakdown ±60 Voltage Emitter to Base Breakdown Voltage3 -6.0 -6.0 -6.0 VCE(SAT) Collector to Emitter Saturation Voltage BVCCO Linear Integrated Systems -0.50 • -0.50 ICC = -±1µA, IB=IC =0A V -1.2 IE = -10µA, IC = 0A IC = -10mA IB = -1mA 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201129 05/21/2014 Rev#A4 ECN#LS3550 ELECTRICAL CHARACTERISTICS CONT. @25 °C (unless otherwise stated) SYMBOL LS3550A CHARACTERISTIC hFE MIN DC Current Gain Collector Cutoff Current IEBO Emitter Cutoff Current IC1C2 Collector to Collector Leakage Current COBO Output Capacitance MIN IC = -1mA, VCE = -5V 120 80 40 IC = -10mA, VCE = -5V 100 60 30 IC = -50mA, VCE = -5V -0.35 IE = 0A, VCB = -30V -0.35 -0.35 -0.35 -0.35 ±1 ±1 ±1 nA 1.90 * 6 2 5 3 4 IE = 0A, VCB = -20V IE = 0A, VCB = -3V µA 2 2 2 pF VCC = ±60V, IB=IC =0A IE = 0A, VCB = -10V 600 600 600 MHz IC = -1mA, VCE = -5V 3 3 3 dB IC = -100µA, VCE = -5V BW = 200Hz RB = 10Ω, f = 1kHz PDIP PDIP TO-78 TO-71 0.060 1 CONDITIONS 50 0.95 0.90 1.30 UNIT MAX 100 Noise Figure (Narrow Band) SOT-23 SOT-23 MAX LS3550C 150 Gain Bandwidth Product (Current) NF MIN -0.35 ICBO fT MAX LS3550B 0.35 0.50 1 8 2 7 3 6 4 5 0.100 0.375 2.80 3.00 0.038 0.210 0.170 0.250 1.50 1.75 2.60 3.00 0.145 0.170 0.09 0.20 0.295 0.320 DIMENSIONS IN INCHES SOIC SOIC 0.00 0.15 0.10 0.60 0.014 0.018 DIMENSIONS IN MILLIMETERS 0.021 1 8 2 7 3 6 4 5 0.150 0.157 *Standard package is SOT-23 6 lead. Other packages listed are optional. Contact factory regarding availability of optional packages. 0.050 0.189 0.196 0.0040 0.0098 0.0075 0.0098 0.2284 0.2440 DIMENSIONS IN INCHES NOTES 1. Maximum rating for LS3550A, SOT23-6. 2. Absolute maximum ratings are limiting values above which serviceability may be impaired. 3. The reverse Base-to-Emitter voltage must never exceed -6.0 Volts. The reverse Base-to-Emitter current must never exceed -10µA. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro Power Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201129 05/21/2014 Rev#A4 ECN#LS3550