PAD SERIES PICO AMPERE DIODES FEATURES DIRECT REPLACEMENT FOR SILICONIX PAD SERIES REVERSE BREAKDOWN VOLTAGE BVR ≥ -30V REVERSE CAPACITANCE Crss ≤ 2.0pF ABSOLUTE MAXIMUM RATINGS PAD1,2,5 PAD50 JPAD SSTPAD 1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -55 to +150 °C Operating Junction Temperature -55 to +150 °C Maximum Power Dissipation SOT-23 TOP VIEW Continuous Power Dissipation (PAD) 300mW Continuous Power Dissipation (J/SSTPAD) 350mW C K 1 K C 2 3 A Maximum Currents Forward Current (PAD) 50mA Forward Current (J/SSTPAD) 10mA COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC BVR Reverse Breakdown Voltage VF MIN ALL PAD -45 ALL SSTPAD -30 ALL JPAD -35 Forward Voltage Crss Total Reverse Capacitance TYP MAX UNITS IR = -1µA V 0.8 1.5 PAD1,5 0.5 0.8 All Others 1.5 2 CONDITIONS IF = 5mA VR = -5V, f = 1MHz pF SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL IR 1. 2. CHARACTERISTIC Maximum Reverse Leakage Current PAD PAD1 -1 JPAD SSTPAD PAD2 -2 (SST/J)PAD5 -5 -5 -5 (SST/J)PAD10 -10 -10 -10 (SST/J)PAD20 -20 -20 -20 (SST/J)PAD50 -50 -50 -50 (SST/J)PAD100 -100 -100 (SST/J)PAD200 -200 (SST/J)PAD500 -500 UNITS pA CONDITIONS VR = -20V Derate 2mW/°C above 25°C Derate 2.8mW/°C above 25°C Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201142 11/01/12 Rev#A6 ECN# PAD SERIES Figure 1. Operational Amplifier Protection Input Differential Voltage limited to 0.8V (typ) by JPADs D1 and D2. Common Mode Input voltage limited by JPADs D3 and D4 to ±15V. Figure 2. Sample and Hold Circuit Typical Sample and Hold circuit with clipping. JPAD diodes reduce offset voltages fed capacitively from the JFET switch gate. FIGURE 2 FIGURE 1 +V D2 OP-27 D2 2N4117A + D3 +V JPAD5 D1 JPAD20 D1 -V ein D4 CONTROL SIGNAL 2N4393 C VOUT R +15V -15V SOT-23 TO-72 Three Lead 0.89 1.03 0.37 0.51 1 1.78 2.05 2.80 3.04 3 2 1.20 1.40 2.10 2.64 0.89 1.12 0.085 0.180 0.013 0.100 0.55 DIMENSIONS IN MILLIMETERS 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. The PAD type number denotes its maximum reverse current value in pico amperes. Devices with IR values intermediate to those shown are available upon request. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201142 11/01/12 Rev#A6 ECN# PAD SERIES