LSK189 LOW NOISE, LOW CAPACITANCE SINGLE N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 1.8V/√Hz LOW INPUT CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) CISS = 4pF 1 TO 92 TOP VIEW SOT-23 TOP VIEW Maximum Temperatures Storage Temperature -55 to +150°C Junction Operating Temperature -55 to +150°C Maximum Power Dissipation 300mW Continuous Power Dissipation TA=25°C 4 Maximum Currents Gate Forward Current IG(F) = 10mA Maximum Voltages Gate to Source VGSO = 60V Gate to Drain VGDO = 60V SYMBOL BVGSS CHARACTERISTIC MIN Gate to Source Breakdown Voltage -60 VGS(OFF) Gate to Source Pinch-off Voltage -1.5 VGS Gate to Source Operating Voltage -0.5 2 IDSS Drain to Source Saturation Current 2.5 IG IG IGSS Gate Operating Current * For equivalent monolithic dual, see LSK489 TYP Full Conductance Transconductance GOS Full Output Conductance GOS Output Conductance NF Noise Figure en Noise Voltage en Noise Voltage CISS Common Source Input Capacitance CRSS Common Source Reverse Transfer Cap. Linear Integrated Systems CONDITIONS VDS = 0, ID = -1nA -3.5 V VDS = 15V, ID = 1nA -3.5 V VDS = 15V, ID = 500µA 5 15 mA VDS = 15V, VGS = 0 -2 -25 pA VDG = 15V, ID = 200µA -0.8 -10 nA -100 1500 1000 UNITS V Gate to Source Leakage Current Gfs MAX 1500 TA=125°C pA VGS = -15V µS VDS = 15V, VGS = 0, f = 1kHz µS VDS = 15V, ID = 500µA 40 µS VDS = 15V, VGS = 0 2.7 µS VDS = 15V, ID = 200µA 0.5 dB VDS = 15V, VGS = 0, RG = 10MΩ, f = 100Hz, NBW = 6Hz 1.8 2.0 nV/√Hz VDS = 15V, ID = 2mA, f = 1kHz, NBW = 1Hz 2.8 3.5 nV/√Hz VDS = 15V, ID = 2mA, f = 10Hz, NBW = 1Hz 4 8 pF 3 pF 1.8 VDS = 15V, ID = 500µA, f = 1MHz • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201150 09/07/2013 Rev#A18 ECN# LSK189 SOT-23 0.89 1.03 0.37 0.51 1 1.78 2.05 2.80 3.04 3 2 1.20 1.40 2.10 2.64 0.89 1.12 0.085 0.180 0.013 0.100 0.55 DIMENSIONS IN MILLIMETERS 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 3%. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. 3. All characteristics MIN/TYP/MAX numbers are absolute values. Negative values indicate electrical polarity only. 4. Derate 2.8 mW °C above 25°C. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201150 09/07/2013 Rev#A18 ECN# LSK189 Typical Characteristics Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201150 09/07/2013 Rev#A18 ECN# LSK189 Typical Characteristics (Cont’d) Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201150 09/07/2013 Rev#A18 ECN# LSK189 Typical Characteristics (Cont’d) Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201150 09/07/2013 Rev#A18 ECN# LSK189