2N/PN SST4416 2N4416A N-CHANNEL JFET HIGH FREQUENCY AMPLIFIER FEATURES Replacement For SILICONIX 2N/SST4416 & 2N4416A VERY LOW NOISE FIGURE (400 MHz) 4 dB EXCEPTIONAL GAIN (400 MHz) 10 dB ABSOLUTE MAXIMUM RATINGS 1 2N SERIES PN SERIES* SST SERIES @ 25 °C (unless otherwise stated) SOT-23 TOP VIEW Maximum Temperatures Storage Temperature -55 to +150 °C Operating Junction Temperature -55 to +135 °C D 1 S 2 3 G Maximum Power Dissipation Continuous Power Dissipation 300mW Maximum Currents Gate Current 10mA Maximum Voltages Gate to Drain or Gate to Source 2N4416 -30V Gate to Drain or Gate to Source 2N4416A -35V *Optional Package For 2N4416 ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC BVGSS Gate to Source Breakdown Voltage 2N/PN/SST4416 -30 2N4416A -35 VGS(off) Gate to Source Cutoff Voltage 2N/PN/SST4416 IDSS MIN gfs Forward Transconductance gos Output Conductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss en CONDITIONS V VDS = 15V, ID = 1nA -6 5 15 2N -0.1 PN/SST -1.0 4000 7500 100 2 Output Capacitance UNITS IG = -1µA, VDS = 0V -2.5 Gate to Source Saturation Current Gate Leakage Current MAX -6 2N4416A IGSS TYP mA nA VDS = 15V, VGS = 0V VGS = -20V, VDS = 0V VGS = -15V, VDS = 0V µS VDS = 15V, VGS = 0V, f = 1kHz pF VDS = 15V, VGS = 0V, f = 1MHz nV/√Hz VDS = 10V, VGS = 0V, f = 1kHz 0.8 2 4 2 2 Equivalent Input Noise Voltage Linear Integrated Systems 6 • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201133 06/19/13 Rev#A9 ECN# 2N4416 HIGH FREQUENCY ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC giss Input Conductance 100 MHz MIN 100 1000 2500 10000 goss Output Conductance 2 75 100 2 1000 4000 boss Output Susceptance Gfs Forward Transconductance 2 2 Power Gain Noise Figure MAX 2 Input Susceptance NF MIN 2 biss Gps MAX 400 MHz UNITS CONDITIONS µS VDS = 15V, VGS = 0V 4000 18 10 2 2 4 VDS = 15V, ID = 5mA dB VDS = 15V, ID = 5mA, RG = 1kΩ SOT-23 0.89 1.03 0.37 0.51 1 1.78 2.05 2.80 3.04 3 2 1.20 1.40 2.10 2.64 0.89 1.12 0.085 0.180 0.013 0.100 0.55 DIMENSIONS IN MILLIMETERS *Dimensions in inches NOTES 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. Not production tested, guaranteed by design. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201133 06/19/13 Rev#A9 ECN# 2N4416