RENESAS 2SJ451

2SJ451
Silicon P Channel MOS FET
REJ03G0864-0400
Rev.4.00
Sep 07, 2007
Description
Low frequency power switching
Features
•
•
•
•
Low on-resistance.
Low drive power
2.5 V gate drive device.
Small package (MPAK).
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
D
3
1. Source
2. Gate
3. Drain
G
1
2
S
Note: Marking is “ZK–”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Note:
1. PW ≤ 10 µs, duty cycle ≤ 1%
REJ03G864-0400 Rev.4.00 Sep 07, 2007
Page 1 of 6
Symbol
VDSS
VGSS
ID
ID (pulse) Note 1
Pch
Tch
Tstg
Value
–20
±20
–0.2
–0.4
150
150
–55 to +150
Unit
V
V
A
A
mW
°C
°C
2SJ451
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Note:
2. Pulse test
REJ03G864-0400 Rev.4.00 Sep 07, 2007
Page 2 of 6
Symbol
V (BR) DSS
V (BR) GSS
IDSS
IGSS
VGS (off)
RDS (on) 1
RDS (on) 2
|yfs|
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Min
–20
±20
—
—
–0.5
—
—
0.13
—
—
—
—
—
—
—
Typ
—
—
—
—
—
2.3
5.0
0.23
2.4
31
0.6
170
680
3.0
2.8
Max
—
—
–1.0
±2.0
–1.5
3.5
9.0
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
µs
µs
Test Conditions
ID = –100 µA, VGS = 0
IG = ±100 µA, VDS = 0
VDS = –16 V, VGS = 0
VGS = ±16 V, VDS = 0
ID = –10 µA, VDS = –5 V
ID = –100 mA, VGS = –4 V Note 2
ID = –40 mA, VGS = –2.5 V Note 2
ID = –100 mA, VDS = –10 V Note 2
VDS = –10 V
VGS = 0
f = 1 MHz
ID = –0.1 A
VGS = –10 V
RL = 100 Ω
2SJ451
Main Characteristics
–1
200
ID (A)
1 ms
50
0
0
50
100
150
–0.03
–0.01
Operation in
this area is
limited by RDS (on)
n
tio
ra
pe
100
–0.1
O
Drain Current
150
–0.3
C
D
Channel Dissipation
Maximum Safe Operation Area
=
s
PW 0 m
1
Pch (mW)
Maximum Channel Dissipation Curve
–0.003
Ta = 25°C
–0.001
–0.1 –0.3
–1
200
Ambient Temperature Ta (°C)
VDS (V)
VDS = –10 V
Pulse Test
Pulse Test
ID (A)
ID (A)
–100
Typical Transfer Characteristics
–2.5 V
–0.16
–0.12
Drain Current
–0.12
Drain Current
–30
–0.20
–10 V
–4 V
–0.16
–10
Drain to Source Voltage
Typical Output Characteristics
–0.20
–3
VGS = –2 V
–0.08
–0.04
–0.08
25°C
Tc = 75°C
–0.04
–25°C
0
0
–2
–4
–6
–8
VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
Pulse Test
–0.8
–0.6
–0.4
ID = –0.2 A
–0.2
–0.1 A
–0.05 A
0
0
–2
–4
–6
Gate to Source Voltage
–8
–10
VGS (V)
REJ03G864-0400 Rev.4.00 Sep 07, 2007
Page 3 of 6
0
–1
–2
–3
–4
Gate to Source Voltage
–5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage VDS (on) (V)
Drain to Source Voltage
0
–10
100
Pulse Test
50
20
10
VGS = –2.5 V
5
–4 V
2
1
–0.01 –0.02
–0.05 –0.1 –0.2
Drain Current
–0.5
ID (A)
–1
2SJ451
10
Pulse Test
–0.1 A
VGS = –2.5 V
8
6
ID = –0.05 A
4
–0.2 A
2
–0.05 A, –0.1 A
–4 V
0
–40
0
40
80
Case Temperature
120
160
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State Resistance
vs. Temperature
2
1
0.5
0.05
25°C
0.02
0.01
0.005
–0.03 –0.1 –0.3
–1
–3
–10
Drain Current ID (A)
Switching Characteristics
10
Coss
30
Switching Time t (µs)
Capacitance C (pF)
VDS = –10 V
Pulse Test
0.002
–0.01
Tc (°C)
100
10
Ciss
3
1
Crss
0.3
0
–10
–20
–30
–40
–50
Reverse Drain Current vs.
Source to Drain Voltage
–0.5
Pulse Test
–0.4
–5 V
–0.3
–0.2
VGS = 0
–0.1
0
–1.2
–1.6
Source to Drain Voltage
VSD
0
–0.4
–0.8
REJ03G864-0400 Rev.4.00 Sep 07, 2007
Page 4 of 6
5
VGS = –10 V, VDD = –10 V
PW = 50 µs, duty ≤ 1 %
tf
td(off)
2
1
tr
0.5
td(on)
0.2
VGS = 0
f = 1 MHz
Drain to Source Voltage VDS (V)
Reverse Drain Current IDR (A)
75°C
0.1
Typical Capacitance vs.
Drain to Source Voltage
0.1
Tc = –25°C
0.2
–2.0
(V)
0.1
–0.01 –0.02
–0.05 –0.1 –0.2
Drain Current
–0.5
ID (A)
–1
2SJ451
Switching Time Test Circuit
Waveform
Vin
Vout
Monitor
Vin Monitor
10%
D.U.T.
90%
RL
90%
90%
Vin
–10 V
50 Ω
VDD
= –10 V
Vout
td(on)
REJ03G864-0400 Rev.4.00 Sep 07, 2007
Page 5 of 6
10%
tr
10%
td(off)
tf
2SJ451
Package Dimensions
JEITA Package Code
SC-59A
Package Name
MPAK
RENESAS Code
PLSP0003ZB-A
D
Previous Code
MPAK(T) / MPAK(T)V
A
Q
e
E
c
HE
L
A
MASS[Typ.]
0.011g
LP
L1
A3
A
x M S
A
b
Reference Dimension in Millimeters
Symbol
Min Nom Max
e
A2
A
e1
A1
S
b
I1
c
b2
A-A Section
Pattern of terminal position areas
A
A1
A2
A3
b
c
D
E
e
HE
L
L1
LP
x
b2
e1
I1
Q
1.0
0
1.0
0.35
0.1
2.7
1.35
2.2
0.35
0.15
0.25
1.1
0.25
0.4
0.16
1.5
0.95
2.8
1.3
0.1
1.2
0.5
0.26
3.1
1.65
3.0
0.75
0.55
0.65
0.05
0.55
1.95
1.05
0.3
Ordering Information
Part Name
2SJ451ZK-TL-E
2SJ451ZK-TR-E
Note:
Quantity
3000 pcs
3000 pcs
Shipping Container
Taping
Taping
For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
REJ03G864-0400 Rev.4.00 Sep 07, 2007
Page 6 of 6
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Colophon .7.0