RENESAS 2SD1472

2SD1472
Silicon NPN Epitaxial, Darlington
REJ03G0792-0300
Rev.3.00
Nov 30, 2007
Application
Low frequency power amplifier
Outline
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK R )
1
3
2
2
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
1
ID
6 kΩ
(Typ)
0.5 kΩ
(Typ)
3
Note:
Marking is “CT”.
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
iC(peak)*1
PC*2
Tj
Tstg
Ratings
120
120
7
1.5
3.0
1.0
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
E to C diode forward current
ID
1.5
A
Notes: 1. Pulse ≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm)
REJ03G0792-0300 Rev.3.00 Nov 30, 2007
Page 1 of 5
2SD1472
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
E to C diode forward voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
hFE
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
VD
Notes: 1. Pulse test
REJ03G0792-0300 Rev.3.00 Nov 30, 2007
Page 2 of 5
Min
120
120
7
—
—
2000
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
—
Max
—
—
—
1.0
10
30000
1.5
2.0
2.0
2.5
3.0
Unit
V
V
V
µA
µA
V
V
V
V
V
Test conditions
IC = 0.1 mA, IE = 0
IC = 10 mA, RBE = ∞
IE = 50 mA, IC = 0
VCB = 100 V, IE = 0
VCE = 100 V, RBE = ∞
VCE = 3 V, IC = 1 A*1
IC = 1 A, IB = 1 mA*1
IC = 1.5 A, IB = 1.5 mA*1
IC = 1 A, IB = 1 mA*1
IC = 1.5 A, IB = 1.5 mA*1
ID = 1.5 A*1
2SD1472
Main Characteristics
10
0.4
50
3
10
30
100
300
Typical Output Characteristics
DC Current Transfer Ratio vs.
Collector Current
30,000
Pc = 1
W
DC Current Transfer Ratio hFE
200
180
160
140
120
0.8
100 µA
0.4
IB = 0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Saturation Voltage vs. Collector Current
10
200, 500
3
VBE (sat)
500
1.0
VCE (sat)
lC/lB = 200
0.3
0.1
0.1
0.03
0.01
150
1.2
0
Ta = 25°C
1 Shot Pulse
0.1
Collector to Emitter Voltage VCE (V)
Ta = 25°C
1.6
0.3
Ambient Temperature Ta (°C)
2.0
Collector Current IC (A)
100
1.0
s
ms
0µ 1
s
0m
=1
0.8
1 µs
iC (peak)
3
10
Collector Current IC (A)
1.2
0
Collector to Emitter Saturation Voltage
VCE (sat) (V)
Base to Emitter Saturation Voltage
VBE (sat) (V)
Area of Safe Operation
PW
Collector Power Dissipation Pc (W)
(on the alumina ceramic board)
Maximum Collector Dissipation Curve
Ta = 25°C
0.3
1.0
3
Collector Current IC (A)
REJ03G0792-0300 Rev.3.00 Nov 30, 2007
Page 3 of 5
10
10,000
3,000
Ta
=
75
°C
–2
25
VCE = 3 V
Pulse
1,000
300
0.1
5
0.3
1.0
3
Collector Current IC (A)
10
2SD1472
Transient Thermal Resistance
Thermal Resistance θj-a (°C/W)
300
100
30
10
3
Ta = 25°C
On the Alumina Ceramic Board (12.5×30×0.7 mm)
1.0
0.3
1m
10 m
100 m
1
Time t (s)
REJ03G0792-0300 Rev.3.00 Nov 30, 2007
Page 4 of 5
10
100
1,000
2SD1472
Package Dimensions
1.5 1.5
3.0
MASS[Typ.]
0.050g
1.5 ± 0.1
0.44 Max
2.5 ± 0.1
4.25 Max
0.53 Max
0.48 Max
0.8 Min
φ1
0.4
4.5 ± 0.1
1.8 Max
Previous Code
UPAK / UPAKV
Unit: mm
(1.5)
0.44 Max
(0.2)
RENESAS Code
PLZZ0004CA-A
(2.5)
JEITA Package Code
SC-62
(0.4)
Package Name
UPAK
Ordering Information
Part Name
2SD1472CTTR-E
Note:
Quantity
1000
Shipping Container
φ 178 mm Reel, 12 mm Emboss Taping
For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
REJ03G0792-0300 Rev.3.00 Nov 30, 2007
Page 5 of 5
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes:
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Colophon .7.2