HAT2054M Silicon N Channel Power MOS FET Power Switching REJ03G1173-0400 (Previous: ADE-208-756B) Rev.4.00 Sep 07, 2005 Features • • • • Low on-resistance Low drive current High density mounting 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PTSP0006FA-A (Package name: TSOP-6) 1 2 5 6 D D D D 6 5 4 1 2 3 4 3 1, 2, 5, 6 3 G S 4 Rev.4.00 Sep 07, 2005 page 1 of 3 Source Gate Drain HAT2054M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS Value 30 Unit V VGSS ±20 6.3 V A 25.2 6.3 A A Pch (pulse) Note 3 Pch (continuous) 2.0 1.05 W W Tch Tstg 150 –55 to +150 °C °C Gate to source voltage Drain current ID Note 2 Note 1 Drain peak current Body to drain diode reverse drain current ID (pulse) Note 2 IDR Note 2 Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the alumina ceramic board (50 × 50 × 0.7 mm), PW ≤ 5 s, Ta = 25°C 3. When using the alumina ceramic board (50 × 50 × 0.7 mm), Ta = 25°C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V (BR) DSS Min 30 Typ — Max — Unit V IGSS IDSS — — — — ±0.1 1 µA µA VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 Gate to source cutoff voltage Static drain to source on state resistance VGS (off) RDS (on) 1.0 — — 26 2.5 31 V mΩ VDS = 10 V, ID = 1 mA Note 4 ID = 3 A, VGS = 10 V Forward transfer admittance RDS (on) |yfs| — 4 40 7 52 — mΩ S ID = 3 A, VGS = 4.5 V Note 4 ID = 3 A, VDS = 10 V Input capacitance Output capacitance Ciss Coss — — 620 170 — — pF pF Reverse transfer capacitance Turn-on delay time Crss td (on) — — 110 13 — — pF ns VDS = 10 V VGS = 0 f = 1 MHz tr 90 50 — — ns ns Gate to source leak current Zero gate voltage drain current Rise time Turn-off delay time td (off) — — Fall time Body to drain diode forward voltage tf VDF — — 40 0.95 — — ns V trr — (50) — ns Body to drain diode reverse recovery time Note: 4. Pulse test Rev.4.00 Sep 07, 2005 page 2 of 3 Test Conditions ID = 10 mA, VGS = 0 Note 4 VGS = 10 V, ID = 3 A, RL = 3.3 Ω IF = 6.3 A, VGS = 0 IF = 6.3 A, VGS = 0 diF/dt = 20 A/µs Note 4 HAT2054M Package Dimensions JEITA Package Code RENESAS Code SC-95 Modified Package Name PTSP0006FA-A MASS[Typ.] TSOP-6 / TSOP-6V D 0.012g A e Q E c HE L LP L1 A Reference Symbol A3 A x M S b A e A2 A e1 A1 y S S b b1 I1 c1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x y b2 e1 I1 Q Dimension in Millimeters Min 0.8 0 0.8 0.25 0.1 2.8 1.45 2.6 0.3 0.1 0.2 Nom 0.9 0.25 0.32 0.3 0.13 0.11 2.95 1.6 1.0 2.8 Max 1.1 0.1 1.0 0.4 0.15 3.1 1.75 3.0 0.7 0.5 0.6 0.05 0.05 0.45 2.2 0.8 0.2 Ordering Information Part Name Quantity Shipping Container HAT2054M-EL-E 3000 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Sep 07, 2005 page 3 of 3 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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