Direct Attach DA3547™ LEDs CxxxDA3547-Sxxx00-2 Data Sheet Cree’s Direct Attach DA3547 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting and general-illumination markets. The DA3547 LEDs are among the brightest in the top-view market while delivering a low forward voltage, resulting in a very bright and highly efficient solution. The bondpaddown design allows for eutectic die attach, eliminating the need for wire bonds, and enables superior performance from improved thermal management. The design is optimally suited for industry-standard top-view packages. FEATURES • APPLICATIONS Rectangular LED RF Performance – 450 & 460 nm – 82 mW min – 470 nm – 76 mW min • – • High Reliability - Eutectic Attach • • Low Forward Voltage (Vf) – 3.1 V Typical at 50 mA • • Maximum DC Forward Current – 150 mA • 1000-V ESD Threshold Rating • Large LCD Backlighting Television General Illumination Medium LCD Backlighting – Portable PCs – Monitors InGaN Junction-Down Design • LED Video Displays for Improved Thermal Management • White LEDs • No Wire Bonds Required • Excellent Performance over Temperature CxxxDA3547-Sxxx00-2 Chip Diagram Anode (+) 270 x 75 µm D CPR3EL Rev Data Sheet: 350 x 470 µm Gap 80 µm Cathode (-) 240 x 215 µm Thickness 155 µm Top View Side View Subject to change without notice. www.cree.com Bottom View 1 Maximum Ratings at TA = 25°C Notes 1,3, & 4 CxxxDA3547-Sxxx00-2 DC Forward Current 150 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 200 mA LED Junction Temperature 150°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C LED Chip Storage Temperature -40°C to +120°C Recommended Die Sheet Storage Conditions Electrostatic Discharge Threshold (HBM) ≤30°C / ≤85% RH 1000 V Note 2 Electrostatic Discharge Classification (MIL-STD-883E) Class 2 Note 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 50 mA Part Number Note 3 Forward Voltage (Vf, V) Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C450DA3547-Sxxx00-2 2.8 3.1 3.4 2 20 C460DA3547-Sxxx00-2 2.8 3.1 3.4 2 21 C470DA3547-Sxxx00-2 2.8 3.1 3.4 2 21 Mechanical Specifications CxxxDA3547-Sxxx00-2 Description Dimension Tolerance 310 x 430 ±35 P-N Junction Area (μm) Chip Bottom Area (μm) 350 x 470 ±35 Chip Top Area (μm) 200 x 320 ±35 Chip Thickness (μm) 155 ±15 Bond Pad Width – Anode (um) 75 ±15 Bond Pad Length – Anode (um) 270 ±35 Bond Pad Width – Cathode (um) 215 ±35 Bond Pad Length – Cathode (um) 240 ±35 80 ±15 3 ±0.5 Bond Pad Gap (μm) Bond Pad Thickness (μm) Notes: 2. 3. 4. Maximum ratings are package-dependent. The above ratings were determined using a chip sub-mount on MCPCB (with silicone encapsulation and flux eutectic die attach) for characterization. Ratings for other packages may differ. Junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 50 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements are based on a thru-hole package (with Hysol OS4000 encapsulant and flux eutectic die attach). Optical characteristics are measured in an integrating sphere using Illuminance E. The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance. 160 140 Maximum Operating Current (mA) 1. 120 100 80 Rth j-a = 10 C/W Rth j-a = 20 C/W Rth j-a = 30 C/W Rth j-a = 40 C/W 60 40 20 0 100 110 120 Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and DA and DA3547 are trademarks of Cree, Inc. 2 CPR3EL Rev. D 130 140 150 Ambient Temperature (C) Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxDA3547-Sxxx00-2 Radiant Flux (mW) LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxDA3547-Sxxxxx-2) orders may be filled with any or all bins (CxxxDA3547-xxxxx-2) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 50 mA. C450DA3547-S8200-2 C450DA3547-0713-2 C450DA3547-0714-2 C450DA3547-0715-2 C450DA3547-0716-2 C450DA3547-0709-2 C450DA3547-0710-2 C450DA3547-0711-2 C450DA3547-0712-2 C450DA3547-0705-2 C450DA3547-0706-2 C450DA3547-0707-2 C450DA3547-0708-2 94 88 82 445 447.5 450 452.5 455 Radiant Flux (mW) Dominant Wavelength (nm) C460DA3547-S8200-2 C460DA3547-0713-2 C460DA3547-0714-2 C460DA3547-0715-2 C460DA3547-0716-2 C460DA3547-0709-2 C460DA3547-0710-2 C460DA3547-0711-2 C460DA3547-0712-2 C460DA3547-0705-2 C460DA3547-0706-2 C460DA3547-0707-2 C460DA3547-0708-2 94 88 82 455 457.5 460 462.5 465 Radiant Flux (mW) Dominant Wavelength (nm) C470DA3547-S7600-2 C470DA3547-0709-2 C470DA3547-0710-2 C470DA3547-0711-2 C470DA3547-0712-2 C470DA3547-0705-2 C470DA3547-0706-2 C470DA3547-0707-2 C470DA3547-0708-2 C470DA3547-0701-2 C470DA3547-0702-2 C470DA3547-0703-2 C470DA3547-0704-2 88 82 76 465 467.5 470 472.5 475 Dominant Wavelength (nm) Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and DA and DA3547 are trademarks of Cree, Inc. 3 CPR3EL Rev. D Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 www.cree.com Relative Light Int Characteristic Curves 150% 100% 50% 0% 0 50 100 150 If (mA) These are representative measurements for the DA LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Forward Current vs. Forward Voltage Forward Current vs. Forward Voltage Wavelength Shift vs. Forward Current 150 150 Dominant Wavelength If (mA)Shift (nm) 2 If (mA) 100 50 100 1 0 50 -1 0 -2 0 0 0 1 2 3 4 1 0 5 2 50 Vf (V) Relative Intensity vs. Forward Current Relative Intensity vs. Wavelength 300% 3 4 100 Vf (V) If (mA) 5 150 Relative Intensity vs. Wavelength 100 80 80 200% Relative Intensity Relative RelativeIntensity Light Intensity 100 250% 60 150% 100% 40 40 20 50% 20 0% 0 0 0 60 350 50 400 100 450 If (mA) 500 150 550 350 400 600 450 500 550 600 Wavelength (nm) Wavelength (nm) Wavelength Shift vs. Forward Current Dominant Wavelength Shift (nm) 2 1 0 -1 -2 0 50 100 150 If (mA) Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and DA and DA3547 are trademarks of Cree, Inc. 4 CPR3EL Rev. D Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 www.cree.com Radiation Pattern This is a representative radiation pattern for the DA LED product. Actual patterns will vary slightly for each chip. Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and DA and DA3547 are trademarks of Cree, Inc. 5 CPR3EL Rev. D Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 www.cree.com