Datenblätter

LED Chip Infrared
Product No:
Radiation
Infrared
Type
AlGaAs, DDH
OPC8500-11
Electrodes
P (anode) up
typ. dimension (µm)
typ. thickness 160 ± 25 µm
anode - gold alloy, 1.5 µm
cathode - gold alloy 0.5 µm
structured, 25% covered
Dimensions
Electrical & Optical Characteristics (Ta = 25ºC)
ITEMS
SYMBOL
CONDITIONS
MIN
TYP
Forward Voltage
Vf
If=100mA
--
1.35
--
V
Forward Voltage
Vf
If=350mA
--
1.7
1.9
V
Reverse Voltage
Vr
Ir=100μA
5
--
--
V
Radiant Power*
Φe
If=20mA
4
--
mW
--
MAX
UNIT
Radiant Power*
Φe
If=350mA
--
60
--
mW
Switching Time
tr, tf
If=20mA
--
15; 20
--
ns
Peak Wavelength
λp
If=350mA
840
850
860
nm
Spectral Bandwidth at 50%
∆λ0.5
If=350mA
--
45
--
nm
*Measured on bare chip on TO-18 header
Absolute Maximum Ratings (Ta = 25ºC)
ITEMS
SYMBOL
Forward DC Current
If
RATINGS
UNIT
500
mA
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All
operating parameters must be validated for each customer application by the customer.
2014-04-04
Global Headquarters, 3 Northway Lane North, Latham, NY 12110, USA
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1-800-984-5337 •
PHONE:
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FAX:
www.marktechopto.com
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EMAIL:
info@marktechopto.com
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