APPLICATION NOTE Migrating from MX25L25635E/25735E to MX25L25635F/25735F 1. Introduction This document highlights parameters which may require attention when migrating from the MX25L25635E/25735E (110nm Revision “E”) to the MX25L25635F/25735F (75nm Revision “F”). The information provided in this document is based on datasheets listed in Section 10. Newer versions of the datasheets may override the contents of this document. A comparison of key features is provided in Table 1-1. Table 1-1: Key Feature Comparison Part Number Feature Process Technology VCC I/O MX25L25635F MX25L25735E MX25L25735F 110nm 75nm 110nm 75nm 2.7V – 3.6V 2.7V – 3.6V 2.7V – 3.6V 2.7V – 3.6V x1/x2/x4 x1/x2/x4 x1/x2/x4 x1/x2/x4 Normal Read 50MHz 50MHz 50MHz 50MHz Fast Read 1x I/O 80MHz 104MHz 80MHz 104MHz Fast Read 2x I/O 70MHz 84MHz 70MHz 84MHz Fast Read 4x I/O 70MHz 84MHz 70MHz 84MHz Enhanced Frequency ( x1/x2/x4: 10 dummy cycles) - 133MHz - 133MHz QPI Interface - Yes - Yes 4-Byte Address Command Set - Yes - - Yes Yes Yes Yes Read Burst Mode - Yes - Yes Software Reset Command - Yes - Yes Erase Suspend & Resume - Yes - Yes Program Suspend & Resume - Yes - Yes Flexible Dummy Cycles - Yes - Yes Adjustable Output Driver - Yes - Yes Fast Boot Mode - Yes - Yes 4KBit 4KBit 4KBit 4KBit BP Protect Top Top/Bottom Top Top/Bottom Volatile Write Protection Yes Yes Yes Yes Non-volatile Write Protection - Yes - Yes Password Protection - Yes - Yes Read Read Enhance Mode Security OTP Protection P/N: AN0200 MX25L25635E 1 REV. 1, DEC. 13, 2012 APPLICATION NOTE Migrating from MX25L25635E/25735E to MX25L25635F/25735F 2. Package MX25L25635F/25735F series provide 16-SOP (300mil) and 8-WSON (8x6mm) package options, which have pin out and physical dimensions identical to the MX25L25635E/25735E (with the exception of pin #1 of the MX25635F 16SOP where the HOLD# feature has been removed). Table 2-1: Package Pins Comparison 16-PIN SOP (300mil) MX25L25635E MX25L25635F MX25L25735E MX25L25735F HOLD#/SIO3 DNU/SIO3 HOLD#/SIO3 HOLD#/SIO3 VCC VCC VCC VCC RESET# RESET# NC NC NC NC NC NC NC NC NC NC NC NC NC NC CS# CS# CS# CS# SO/SIO1 SO/SIO1 SO/SIO1 SO/SIO1 MX25L25635E MX25L25635F MX25L25735E MX25L25735F CS# CS# CS# CS# SO/SIO1 SO/SIO1 SO/SIO1 SO/SIO1 WP#/SIO2 WP#/SIO2 WP#/SIO2 WP#/SIO2 GND GND GND GND 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 MX25L25635E MX25L25635F MX25L25735E MX25L25735F SCLK SCLK SCLK SCLK SI/SIO0 SI/SIO0 SI/SIO0 SI/SIO0 NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC GND GND GND GND WP#/SIO2 WP#/SIO2 WP#/SIO2 WP#/SIO2 8-WSON (8x6mm) P/N: AN0200 1 2 3 4 8 7 6 5 2 MX25L25635E MX25L25635F MX25L25735E MX25L25735F VCC VCC VCC VCC RESET#/SIO3 RESET#/SIO3 HOLD#/SIO3 HOLD#/SIO3 SCLK SCLK SCLK SCLK SI/SIO0 SI/SIO0 SI/SIO0 SI/SIO0 REV. 1, DEC. 13, 2012 APPLICATION NOTE Migrating from MX25L25635E/25735E to MX25L25635F/25735F 3. Command Set The core commands for read, erase, and program are unchanged between the E and F versions. For a full list of commands and a description of their functions, please refer to each product's datasheet Table 3-1: Command Set Comparison Command Symbol READ Read Erase Program ID Read P/N: AN0200 Description MX25L25635E MX25L25635F MX25L25735E MX25L25735F Normal Read (1-1-1) 03h 03h 03h 03h FASTREAD Fast Read (1-1-1) 0Bh 0Bh 0Bh 0Bh DREAD Dual Output (1-1-2) 3Bh 3Bh 3Bh 3Bh 2READ 2 I/O (1-2-2) BBh BBh BBh BBh QREAD Quad Output (1-1-4) 6Bh 6Bh 6Bh 6Bh 4READ 4 I/O (1-4-4) EBh EBh EBh EBh SE Sector Erase (4KB) 20h 20h 20h 20h BE32KB Block Erase (32KB) 52h 52h 52h 52h BE Block Erase (64KB) D8h D8h D8h D8h CE Chip Erase 60h or C7h 60h or C7h 60h or C7h 60h or C7h PP Page Program 02h 02h 02h 02h 4PP Quad Input Page Program 38h 38h 38h 38h RDID Read ID 9Fh 9Fh 9Fh 9Fh RES Read Electronic ID ABh ABh ABh ABh REMS Read Electronic & Mfr ID 90h 90h 90h 90h REMS2 Read ID for 2x I/O Mode EFh - EFh - REMS4 Read ID for 4x I/O Mode DFh - DFh - QPIID QPI ID Read - AFh - AFh 3 REV. 1, DEC. 13, 2012 APPLICATION NOTE Migrating from MX25L25635E/25735E to MX25L25635F/25735F Table 3-1: Command Set Comparison - Continued Command Register Mode Symbol MX25L25635E MX25L25635F MX25L25735E MX25L25735F RDSR Read Status Register 05h 05h 05h 05h WRSR Write Status Register 01h 01h 01h 01h RDSCUR Read Security Register 2Bh 2Bh 2Bh 2Bh WRSCUR Write Security Register 2Fh 2Fh 2Fh 2Fh RDFBR Read Fast Boot Register - 16h - 16h WRFBR Write Fast Boot Register - 17h - 17h ESFBR Erase Fast Boot Register - 18h - 18h WREN Write Enable 06h 06h 06h 06h WRDI Write Disable 04h 04h 04h 04h EQIO Enable QPI - 35h - 35h RSTQIO Disable QPI - F5h - F5h SBL Set Burst Length - C0h - C0h 70h - 70h - 80h - 80h - A3h - A3h - PGM/ERS Suspends Program/Erase Suspend - B0h - B0h PGM/ERS Resumes Program/Erase Resume - 30h - 30h NOP No Operation - 00h - 00h RSTEN Reset Enable - 66h - 66h RST Reset Memory - 99h - 99h CLSR Clear SR Fail Flags 30h - 30h - ESRY DSRY HPM Reset Description Enable SO to output RY/ BY# Disable SO to output RY/ BY# High Performance Enable Mode The E versions use the CLSR (30h) command to clear the P_FAIL and E_FAIL flags. However, the F versions clear these flags automatically upon successful completion of a program or erase operation. P/N: AN0200 4 REV. 1, DEC. 13, 2012 APPLICATION NOTE Migrating from MX25L25635E/25735E to MX25L25635F/25735F Table 3-1: Command Set Comparison - Continued Command Symbol MX25L25635E MX25L25635F MX25L25735E MX25L25735F SBLK Single Block Lock 36h - 36h - SBULK Single Block Unlock 39h - 39h - RDBLOCK Block Protect Read 3Ch - 3Ch - WRLR Write Lock Register - 2Ch - 2Ch RDLR Read Lock Register - 2Dh - 2Dh - 28h - 28h - 27h - 27h WRPASS RDPASS Protection Description Write Password Register Read Password Register PASSULK Password Unlock - 29h - 29h WRSPB SPB Bit Program - E3h - E3h ESSPB All SPB Bit Erase - E4h - E4h RDSPB Read SPB Status - E2h - E2h SPBLK SPB Lock Set - A6h - A6h RDSPBLK Read SPB Lock Register - A7h - A7h WRDPB Write DPB Register - E1h - E1h RDDPB Read DPB Register - E0h - E0h The command set and implementation of Individual Sector Protection Mode is has changed between the E and F versions. Please refer to each product’s datasheet for more details. P/N: AN0200 5 REV. 1, DEC. 13, 2012 APPLICATION NOTE Migrating from MX25L25635E/25735E to MX25L25635F/25735F Table 3-1: Command Set Comparison - Continued Command 4-Byte Mode Symbol Description MX25L25635E MX25L25635F MX25L25735E MX25L25735F EN4B Enter 4-byte Address Mode B7h B7h - - EX4B Exit 4-byte Address Mode E9h E9h - - WREAR Write Extended Address Register - C5h - - RDEAR Read Extended Address Register - C8h - - READ4B Read Data Bytes Using 4 Bytes Address - 13h - - FASTREAD4B Read Data Bytes at Higher Speed using 4 Bytes Address - 0Ch - - DREAD4B Dual Output Fast Read Using 4 Byte Address - 3Ch - - 2READ4B Dual Input/Output Fast Read Using 4 Byte Address - BCh - - QREAD4B Quad Output Fast Read Using 4 Byte Address - 6Ch - - Quad Input/Output Fast Read Using 4 Byte Address - ECh - - SE4B Sector Erase Using 4 Byte Address - 21h - - BE32K4B Block Erase 32KB Using 4 Byte Address - 5Ch - - BE4B Block Erase 64KB Using 4 Byte Address - DCh - - PP4B Page Program Using 4 Byte Address - 12h - - 4PP4B Quad Page Program Using 4 Byte Address - 3Eh - - EAR 4-Byte Command 4READ4B Set The MX25L25635F adds a new 4-Byte Command Set to supplement the legacy 3-Byte Command Set. The 4-Byte Command Set operates similar to the legacy 3-Byte Command set except 4-Bytes of address are required during the address phase. The 4-Byte Command Set is capable of addressing the full address space of the serial flash without needing to enter 4-Byte addressing mode. P/N: AN0200 6 REV. 1, DEC. 13, 2012 APPLICATION NOTE Migrating from MX25L25635E/25735E to MX25L25635F/25735F 4. Write Protection The E and F version products provide two write protection modes to easily protect sectors from inadvertent changes. The default is Block Protection Mode, utilizing the nonvolatile Block Protection (BP) bits in the Status Register. The BP bits specify which block groups will be protected. The second mode uses an individual block protection method. This method utilizes a volatile SRAM lock bit assigned to each block (or sector) and controls its protection status. The Gang Block Lock (GBLK) and Gang Block Unlock (GBULK) commands, which set or clear all SRAM lock bits simultaneously, are identical for both E and F versions. However, the E and F versions use different commands to control individual SRAM lock bits. In addition, the F versions can also be protected with nonvolatile SPB (Solid Protection Bits). 4-1. Block Protection (BP) Mode The F version has a finer granularity of block protection. Furthermore, the F version has the ability to specify whether block protection begins at the top or bottom of memory. This is controlled by the Top/Bottom (TB) bit in the F version’s new Configuration Register. The TB default setting is ‘0’ and specifies the top of memory. 4-2. Individual Sector Protection Both E and F version products provide volatile individual block write protection, to easily protect sectors or blocks against inadvertent changes, as an alternative to the grouped block protection provided by the Block Protection (BP) bits in the Status Register. The F version has additional protection features in the Advanced Sector Protection mode that provide higher levels of protection. These higher levels of protection include: 1. Nonvolatile individual sector/block protection. 2. A software locking mechanism to prevent modifications to the nonvolatile protection until after the next Reset or power-up cycle. 3. A password protection option. These additional protection features can be used to prevent accidental or deliberate data corruption in protected memory areas. Please see the MX25L25635F or MX25L25735F datasheets for more details. P/N: AN0200 7 REV. 1, DEC. 13, 2012 APPLICATION NOTE 5. Electrical Characteristics The comparison of DC and AC characteristics are shown in Tables 5-1 and 5-2: Table 5-1: DC Characteristics DC Performance MX25L25635E MX25L25635F MX25L25735E MX25L25735F 45mA 20mA 45mA 20mA 25mA 25mA 25mA 25mA 25mA 25mA 25mA 25mA VCC Standby Current 200uA 60uA 200uA 60uA Deep Power Down Current 80uA 20uA 80uA 20uA MX25L25635E MX25L25635F MX25L25735E MX25L25735F typ 60ms 43ms 60ms 43ms max 300ms 200ms 300ms 200ms typ 0.5s 0.19s 0.5s 0.19s max 2s 1s 2s 1s typ 0.7s 0.34s 0.7s 0.34s max 2s 2s 2s 2s typ 160s 120s 160s 120s max 400s 300s 400s 300s typ 9us 12us 9us 12us max 300u 30us 300us 30us typ 1.4ms 0.6ms 1.4ms 0.6ms max 5ms 3ms 5ms 3ms Write Status typ Register max 40ms - 40ms - 100ms 40ms 100ms 40ms typ 100,000 100,000 100,000 100,000 15pf max 12ns 6ns 12ns 6ns 30pf max 15ns 8ns 15ns 8ns Read (4I/O) Active Current Erase Program (Note: All of the data shown in Table 5-1 are maximum values). Table 5-2: AC Characteristics AC Performance 4KB 32KB Erase Time 64KB Chip Erase Byte Program Time Page (256-Byte) Erase/Program Cycles tCLQV (4I/O) P/N: AN0200 8 REV. 1, DEC. 13, 2012 APPLICATION NOTE 6. Memory Organization The memory and sector architecture of the MX25L25635F/MX25L25735F flash are identical to the MX25L25635E/MX25L25735E flash. 7. Device Identification The Manufacturer ID and Device ID values of the MX25L25635F/MX25L25735F are identical to MX25L25635E/MX25L25735E flash. Table 7-1: Manufacturer ID & Device ID ID item RDID RES REMS QPIID MX25L25635E MX25L25635F MX25L25735E MX25L25735F Manufacturer ID C2h C2h C2h C2h Type 20h 20h 20h 20h Density 19h 19h 19h 19h Electronic ID 18h 18h 18h 18h Manufacturer ID C2h C2h C2h C2h Device ID 18h 18h 18h 18h Manufacturer ID - C2h - C2h Type - 20h - 20h Density - 19h - 19h 8. Part Number Cross-Reference The part number and package information cross reference between the MX25L25635E/25735E and MX25L25635F/25735F series is shown in Table 8-1. Table 8-1: Part Number Cross-Reference Density Package 16SOP (300mil) 256Mb 8WSON (8x6mm) P/N: AN0200 E Revision F Revision MX25L25635EMI-12G MX25L25635FMI-10G MX25L25735EMI-12G MX25L25735FMI-10G MX25L25635EZNI-12G MX25L25635FZ2I-10G MX25L25735EZNI-12G MX25L25735FZ2I-10G 9 REV. 1, DEC. 13, 2012 APPLICATION NOTE 9. Summary The MX25L25635F/735F is backwards compatible with most of the common commands and features of the earlier E versions. Additionally, the supported package types have identical footprints and nearly identical pinout definitions. The following is a summary of the differences to consider when migrating from the MX25L25635E/25735E to the MX25L25635F/25735F: • • • • Block Protection Mode has finer granularity in the F version. Individual Sector Protection has a different implementation and command set in the F version. The method of clearing the E_FAIL and P_FAIL flags is different in the F version. The Security Register bit assignments have changed. A more detailed analysis should be done if “special” functions such as write protection are used. If common features are utilized in standard and basic modes, then the migration may only need minimal software modification, if any at all, to accommodate differences between the E and F versions. 10.Reference Documents Table 9-1 shows the datasheet versions used for comparison in this application note. For the most current Macronix specification, please refer to the Macronix Website at http://www.macronix.com Table 9-1: Datasheet Version Datasheet Location Date Issued Versions MX25L25635E Macronix Website Feb.10,2012 Rev. 1.3 MX25L25635F Macronix Website Oct.30,2012 Rev 1.0 Mx25L25735E Macronix Website Feb.10,2012 Rev. 1.2 MX25L25735F Macronix Website Oct.30,2012 Rev 1.0 11.Revision History Table 10-1: Revision History Revision No. REV. 1 P/N: AN0200 Description Initial Release 10 Page Date ALL DEC. 13, 2012 REV. 1, DEC. 13, 2012 APPLICATION NOTE Except for customized products which have been expressly identified in the applicable agreement, Macronix's products are designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or household applications only, and not for use in any applications which may, directly or indirectly, cause death, personal injury, or severe property damages. In the event Macronix products are used in contradicted to their target usage above, the buyer shall take any and all actions to ensure said Macronix's product qualified for its actual use in accordance with the applicable laws and regulations; and Macronix as well as it’s suppliers and/or distributors shall be released from any and all liability arisen therefrom. Copyright© Macronix International Co., Ltd. 2012. All rights reserved, including the trademarks and tradename thereof, such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, NBit, Nbit, NBiit, Macronix NBit, eLiteFlash, HybridNVM, HybridFlash, XtraROM, Phines, KH Logo, BE-SONOS, KSMC, Kingtech, MXSMIO, Macronix vEE, Macronix MAP, Rich Audio, Rich Book, Rich TV, and FitCAM. The names and brands of third party referred thereto (if any) are for identification purposes only. For the contact and order information, please visit Macronix’s Web site at: http://www.macronix.com MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice. P/N: AN0200 11 REV. 1, DEC. 13, 2012