APPLICATION NOTE Replacing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix MX30LF4G28AB 1. Introduction This application note is a migration guide for replacing the Toshiba TC58NVG2S0F with the Macronix MX30LF4G28AB 4Gb SLC NAND Flash. The document does not provide detailed information on the individual devices, but highlights the major similarities and differences between them. The comparison covers the general features, performance, command codes and other differences. The information in this document is based on datasheets listed in Section 8. Newer versions of the datasheets may override the contents of this document. 2. General Features The two devices have a different page size and block size. Feature differences are highlighted in Bold Italic type in Table 2-1. Table 2-1. Key Feature Comparison Brand Part Number Toshiba TC58NVG2S0F Macronix MX30LF4G28AB Voltage 2.7V - 3.6V 2.7V - 3.6V Bus Width x8 x8 Operating Temperature -40°C to 85°C -40°C to 85°C ONFI Interface N/A ONFI 1.0 Compliant Memory Cell Array (512M+28M) x 8 bits (512M+28M) x 8 bits Plane Size 2 Planes x 1024 Blocks/Plane 2 Planes x 2048 Blocks/Plane Page Size (4K+224)B (2K+112)B Block Size (256K+14K)B (128K+7K)B Cache Read/Program (4K+224)B (2K+112)B ECC requirement 4bit/512B 8bit/540B OTP N/A 30 Pages Unique ID N/A ONFI Standard Guaranteed Good Blocks at shipping Block#0 Block#0 Data Retention Not Specified 10 Years Endurance Not Specified 100K Cycles Valid Block Number 2008 (Min.) / 2048 (Max.) 4016 (Min.) / 4096 (Max.) Package 48TSOP (12x20mm) 63-VFBGA (9x11mm) 48TSOP (12x20mm) 63-VFBGA (9x11mm) P/N: AN0273 1 REV. 2, JUN. 10, 2014 APPLICATION NOTE Replacing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix MX30LF4G28AB 3. Electrical Performance There are some minor performance differences between the two devices which are highlighted in Bold Italic in Table 3-1. Table 3-1. Key Performance Comparison Brand Part Number Performance Access Time Toshiba TC58NVG2S0F Macronix MX30LF4G28AB Min. Typ. Max. Min. Typ. Max. Random (tR) - - 30us - - 25us Cache Read Busy time - - 30us - 2us 25us Sequential 25ns - - 20ns 600us Page Program - 300us 700us - 300us Program Time Cache Program Busy time - - 700us - 3us 600us Erase Time Block - 3ms 10ms - 1ms 10ms Current Consumption Partial-Page Programs P/N: AN0273 Standby (TTL) - - - - - 1mA Standby (CMOS) - - 50uA - 10uA 50uA Active Read - - 30mA - 20mA 30mA Active Program/Erase - - 30mA Power-up Current (Including POR Current) - - - - - 30mA - 20mA/ 15mA 30mA/ 30mA Input Leakage - - +/- 10uA - - +/- 10uA Output Leakage - - +/- 10uA - - +/- 10uA NOP - - 4 cycles - - 4 cycles 2 REV. 2, JUN. 10, 2014 APPLICATION NOTE Replacing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix MX30LF4G28AB 4. Command Set Command Set differences are highlighted in Bold Italic type in Table 4-1 as below: Table 4-1. Command Set Brand Toshiba Macronix Part Number TC58NVG2S0F MX30LF4G28AB Command Description 1st cmd Cycle 2nd cmd Cycle 1st cmd Cycle 2nd cmd Cycle Read 00h 30h 00h 30h Random Data Input 85h - 85h - Random Read Data Output 05h E0h 05h E0h - - 00h 31h Cache Read Sequential 31h - 31h - Cache Read End 3Fh - 3Fh - Read ID 90h - 90h - Parameter Page Read (ONFI) - - ECh - Read Unique ID (ONFI) - - EDh - Get Features (ONFI) - - EEh - Set Features (ONFI) - - EFh - Cache Read Random Reset FFh - FFh - Page Program 80h 10h 80h 10h Cache Program 80h 15h 80h 15h 80h-11h 80h-10h - - 85h-11h 80h-10h - - Block Erase 60h D0h 60h D0h Read Status Resister 70h - 70h - - 78h - Page Program with 2KB Data (Note1) Copy-back Program with 2KB Data (Note1) Status Enhanced Read 71h (Note2) OTP Area Access Set Feature followed by normal read/program command - Two-plane Program 80h-11h/81h-15h/81h-10h 80h-11h 80h-10h Two-plane Cache Program (ONFI) - - 80h-11h 80h-15h Two-plane Block Erase (ONFI) - - 60h-D1h 60h-D0h Read for Page Copy(2) with Data Out (Note3) 00h 3Ah - - Auto Program with Data Cache during (Note3) Page Copy(2) 8Ch 15h - - Auto Program for last page during (Note3) Page Copy(2) 8Ch 10h - - Notes: 1. The additional command to program with 2KB data for TC58NVG2G0F is not necessary for MX30LF4G28AB since the page program command can program 2KB data. 2. The 71h command is status read for multi-Page Program or Multi Block Erase, which has the similar purpose with the 78h command of MX30LF4G28AB. 3. Toshiba proprietary command P/N: AN0273 3 REV. 2, JUN. 10, 2014 APPLICATION NOTE Replacing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix MX30LF4G28AB 5. Status Register Comparison (70h command) The Status Register bits are compatible (Table 5-1). However, the 2nd status register for the multi-plane is slightly different (Table 5-2). The 2nd status register of TC58NVG2S0F uses the I/O [5:1] bits to provide multi- plane status, while the MX30LF4G28AB uses SR[1:0] when using the status enhanced read command (78h). Please refer to their individual datasheet for more details. Table 5-1. Status Register Comparison Brand Toshiba Part Number TC58NVG2S0F Brand Part Number Macronix MX30LF4G28AB I/O1 Program/Erase Pass or Fail SR[0] Program/Erase Pass or Fail I/O2 Cache Program Pass or Fail SR[1] Cache Program Pass or Fail I/O3 Not Used SR[2] Not Used I/O4 Not Used SR[3] Not Used I/O5 Not Used SR[4] Not Used I/O6 Ready/Busy for Page Buffer SR[5] Ready/Busy for Internal Controller Program/Erase/Read Operation I/O7 Ready/Busy for Data Cache SR[6] Ready/Busy I/O8 Write Protect SR[7] Write Protect Brand Part Number Macronix MX30LF4G28AB Command 78h Table 5-2. Status Register for Multi-plane Brand Toshiba Part Number TC58NVG2S0F Command 71h SR[0] (Note1) Program/Erase(Pass/Fail) I/O1 Chip Status1 (Pass/Fail) I/O2 District 0 Chip status1 (Pass/Fail) SR[1](Note1) Cache Program(Pass/Fail) I/O3 District 1 Chip status1 (Pass/Fail) SR[2] Not Used I/O4 District 0 Chip status2 (Pass/Fail) SR[3] Not Used I/O5 District 1 Chip status2 (Pass/Fail) I/O6 Ready/Busy I/O7 Data Cache Ready/Busy SR[6](Note2) Ready/Busy I/O8 Write Protect SR[7] Write Protect SR[4] SR[5] (Note2) Not Used Ready/Busy (P/E/R controller) Note 1: SR [0:1] are for the status of specific plane in the row address. Note 2: SR [5:6] shared with all planes. P/N: AN0273 4 REV. 2, JUN. 10, 2014 APPLICATION NOTE Replacing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix MX30LF4G28AB 6. Package Pin/Ball Definition The TC58NVG2S0F can be replaced with the MX30LF4G28AB without pin conflicts because the differences are with the DNU (Do Not Use) and NC (No Connect = Not Bonded) pins. The differences in VCC/VSS pins are also not an issue as they are for ONFI compatibility, and are not internally bonded. (See Table 6-1 and 6-2). The functions of the TC58NVG2S0F and MX30LF4G28AB I/O pins are the same but their naming is different. The TC58NVG2S0F has its I/O pins named IO1 to IO8, whereas the MX30LF4G28AB has its I/O pins named IO0 to IO7. Table 6-1. 48-TSOP Package Pin Definition Brand Part Number Toshiba Macronix TC58NVG2S0F MX30LF4G28AB #48 pin NC VSS (might not be bonded, just for ONFI compatibility) #39 pin NC VCC (might not be bonded, just for ONFI compatibility) #38 pin NC DNU #34 pin NC VCC (might not be bonded, just for ONFI compatibility) #25 pin NC VSS (might not be bonded, just for ONFI compatibility) Table 6-2. 63-VFBGA Package Ball Definition Brand Part Number Toshiba Macronix TC58NVG2S0F MX30LF4G28AB #D3 ball NC VCC (might not be bonded, just for ONFI compatibility) #G4 ball NC VCC (might not be bonded, just for ONFI compatibility) #G5 ball NC DNU #F7 ball NC VSS (might not be bonded, just for ONFI compatibility) P/N: AN0273 5 REV. 2, JUN. 10, 2014 APPLICATION NOTE Replacing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix MX30LF4G28AB 7. Device Identification The ID codes of the TC58NVG2S0F and MX30LF4G28AB are different (Table 7-1). Table 7-1. Device Identification Band Part Number Toshiba Macronix TC58NVG2S0F MX30LF4G28AB bit 3 - 2 98h/DCh/00h/22h/64h Manufacturer ID Device ID Number of Die per CE Cell Structure C2h/DCh/90h/95h/57h Manufacturer ID Device ID Number of Die per CE Cell Structure bit 5 - 4 - bit 6 bit 6 Page Size Block Size (Excluding spare area) - bit 1- 0 - ECC level requirement, 8-bit ECC required (bit1:0=11b) bit 3 - 2 Plane number - Plane number Plane Size (Excluding spare area) Reserved ID Code 1st Byte 2nd Byte bit 1- 0 rd 3 Byte bit 7 bit 1- 0 ID Definition bit 2 th 4 Byte bit 7, 3 bit 5 - 4 th 5 Byte bit 6 - 4 bit 7 Number of Concurrently Programmed Pages Interleaved Programming between Cache program Page Size Spare Area Size Sequential Read Cycle Time Block Size (Excluding spare area) Organization 8. References Table 8-1 shows the datasheet versions used for comparison in this application note. For the most current, detailed Macronix specification, please refer to the Macronix Website at http://www.macronix.com. Table 8-1. Datasheet Versions Data sheet P/N: AN0273 Location Date Issued Revision MX30LF4G28AB Website June 2014 Rev. 1.1 TC58NVG2S0FBAI4 Website Sept. 2012 Rev. 1.1 TC58NVG2S0FTAI0 Website Sept. 2012 Rev. 1.5 6 REV. 2, JUN. 10, 2014 APPLICATION NOTE Replacing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix MX30LF4G28AB 9. Summary The Macronix MX30LF4G28AB and Toshiba TC58NVG2S0F NAND flash share the same basic Read, Program, and Erase commands, also have similar pinouts. Firmware changes may be needed to accommodate differences in page size, block size and ECC requirements. 10. Part Number Cross Reference Table 10-1. Part Number Cross Reference Bus Width Voltage x8 3.3V Package Toshiba Part Number Macronix Part Number 63-VFBGA TC58NVG2S0FBAI4 MX30LF4G28AB-XKI 48-TSOP TC58NVG2S0FTAI0 MX30LF4G28AB-TI 11. Revision History Table 11-1. Revision History Revision No. Description Page Date REV. 1 Initial Release ALL Dec. 17, 2013 REV. 2 Table 3-1 values revised to match Macronix Rev1.1 datasheet 2 Jun. 10, 2014 P/N: AN0273 7 REV. 2, JUN. 10, 2014 APPLICATION NOTE Replacing Toshiba TC58NVG2S0F 4Gb NAND Flash with Macronix MX30LF4G28AB Except for customized products which have been expressly identified in the applicable agreement, Macronix's products are designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or household applications only, and not for use in any applications which may, directly or indirectly, cause death, personal injury, or severe property damages. In the event Macronix products are used in contradicted to their target usage above, the buyer shall take any and all actions to ensure said Macronix's product qualified for its actual use in accordance with the applicable laws and regulations; and Macronix as well as it’s suppliers and/or distributors shall be released from any and all liability arisen therefrom. Copyright© Macronix International Co., Ltd. 2014. All rights reserved, including the trademarks and tradename thereof, such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, NBit, Nbit, NBiit, Macronix NBit, eLiteFlash, HybridNVM, HybridFlash, XtraROM, Phines, KH Logo, BE-SONOS, KSMC, Kingtech, MXSMIO, Macronix vEE, Macronix MAP, Rich Au-dio, Rich Book, Rich TV, and FitCAM. The names and brands of third party referred thereto (if any) are for identification purposes only. For the contact and order information, please visit Macronix’s Website at: http://www.macronix.com P/N: AN0273 8 REV. 2, JUN. 10, 2014