3SK296 Silicon N-Channel Dual Gate MOS FET REJ03G0815-0300 (Previous ADE-208-388A) Rev.3.00 Aug.10.2005 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK–4) 2 3 1 4 Note: 1. Source 2. Gate1 3. Gate2 4. Drain Marking is “ZQ–” Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. Rev.3.00 Aug 10, 2005 page 1 of 7 3SK296 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 100 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V(BR)DSX Min 12 Typ — Max — Unit V Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Gate 1 cutoff current Gate 2 cutoff current Drain current V(BR)G1SS V(BR) G2SS IG1SS IG2SS IDS(on) ±8 ±8 — — 0.5 — — — — — — — ±100 ±100 10 V V nA nA mA Gate 1 to source cutoff voltage VG1S(off) –0.5 — +0.5 V VDS = 10 V, VG2S = 3V, ID = 100 µA Gate 2 to source cutoff voltage VG2S(off) 0 — +1.0 V VDS = 10 V, VG1S = 3V, ID = 100 µA |yfs| 16 20.8 — mS VDS = 6 V, VG2S = 3V, ID = 10 mA, f = 1 kHz 1.2 0.6 — 16 — 1.5 0.9 0.01 19.5 2.0 2.2 1.2 0.03 — 3 pF pF pF dB dB VDS = 6 V, VG2S = 3V, ID = 10 mA, f = 1 MHz Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Rev.3.00 Aug 10, 2005 page 2 of 7 Ciss Coss Crss PG NF Test conditions ID = 200 µA , VG1S = –3 V, VG2S = –3 V IG1 = ±10 µA, VG2S = VDS = 0 IG2 = ±10 µA, VG1S = VDS = 0 VG1S = ±6 V, VG2S = VDS = 0 VG2S = ±6 V, VG1S = VDS = 0 VDS = 6 V, VG1S = 0.5V, VG2S = 3 V VDS = 4 V, VG2S = 3V, ID = 10 mA, f = 900 MHz 3SK296 Typical Output Characteristics 20 200 150 100 50 0 50 100 150 Ambient Temperature 1.0 V 12 0.8 V 8 0.6 V 4 VG1S = 0.4 V 2 4 6 8 10 Drain to source voltage VDS (V) Ta (°C) Drain Current vs. Gate2 to Source Voltage 20 20 2.0 V VDS = 6 V 2.0 V Drain current ID (mA) 3.0 V 16 1.2 V 16 0 200 Drain Current vs. Gate1 to Source Voltage Drain current ID (mA) Pulse test VG2S = 3 V Drain current ID (mA) Channel Power Dissipation Pch (mW) Maximum Channel Power Dissipation Curve Pulse test 2.5 V 1.5 V 12 8 1.0 V 4 VDS = 6 V 1.5 V Pulse test 16 1.0 V 12 8 VG1S = 0.5 V 4 VG2S = 0.5 V 1 2 3 4 0 5 2 3 5 Forward Transfer Admittance vs. Gate1 to Source Voltage Power Gain vs. Drain Current 25 VDS = 6 V f = 1 kHz VG2S = 3.0 V 18 2.5 V 2.0 V 12 1.5 V 6 1.0 V 20 15 10 VDS = 4 V VG2S = 3 V f = 900 MHz 5 0.5 V 0 4 Gate2 to source voltage VG2S (V) 30 24 1 Gate1 to source voltage VG1S (V) Power gain PG (dB) Forward transfer admittance |yfs| (mS) 0 0.4 0.8 1.2 1.6 2.0 Gate1 to source voltage VG1S (V) Rev.3.00 Aug 10, 2005 page 3 of 7 0 1 2 5 10 Drain current ID (mA) 20 3SK296 Power Gain vs. Drain to Source Voltage Noise Figure vs. Drain Current 25 4 PG (dB) VDS = 4 V VG2S = 3 V f = 900 MHz 3 Power gain Noise figure NF (dB) 5 2 0 1 2 5 Drain current 20 10 ID (mA) 5 NF (dB) 10 VG2S = 3 V ID = 10 mA f = 900 MHz 4 3 2 VG2S = 3 V ID = 10 mA f = 900 MHz 1 2 4 6 Drain to source voltage Rev.3.00 Aug 10, 2005 page 4 of 7 8 0 2 4 6 8 10 Drain to source voltage VDS (V) Noise Figure vs. Drain to Source Voltage Noise figure 15 5 1 0 20 10 VDS (V) 3SK296 S11 Parameter vs. Frequency S21 Parameter vs. Frequency 1 90° .8 .6 1.5 Scale: 0.5 / div. 60° 120° 2 .4 3 4 5 .2 30° 150° 10 .2 0 .4 .6 .8 1.0 1.5 2 3 45 10 180° 0° −10 −5 −4 −.2 −3 −.4 −30° −150° −2 −.6 −.8 −1 Condition: V DS = 4 V , V G2S = 3 V I D = 10 mA , Zo = 50 Ω 100 to 1000 MHz (50 MHz step) S22 Parameter vs. Frequency Scale: 0.002/ div. .8 60° 120° −90° Condition: V DS = 4 V , V G2S = 3 V I D = 10 mA , Zo = 50 Ω 100 to 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90° −60° −120° −1.5 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1.0 1.5 2 3 45 10 −10 −5 −4 −.2 −30° −150° −3 −.4 −120° −60° −90° Condition: V DS = 4 V , V G2S = 3 V I D = 10 mA , Zo = 50 Ω 100 to 1000 MHz (50 MHz step) Rev.3.00 Aug 10, 2005 page 5 of 7 −2 −.6 −.8 −1 −1.5 Condition: V DS = 4 V , V G2S = 3 V I D = 10 mA , Zo = 50 Ω 100 to 1000 MHz (50 MHz step) 3SK296 S Parameter (VDS = 4 V, VG2S = 3 V, ID = 10 mA, ZO = 50 Ω) Freq. (MHz) S11 S21 S12 S22 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 MAG. 0.999 0.998 0.992 0.988 0.985 0.976 0.971 0.964 0.961 0.951 0.949 0.935 0.933 0.923 0.916 0.908 ANG. –6.1 –9.1 –11.9 –14.8 –17.9 –20.6 –23.2 –26.3 –29.1 –32.2 –35.0 –37.6 –40.5 –42.9 –45.8 –49.0 MAG. 1.98 1.97 1.96 1.96 1.94 1.92 1.91 1.88 1.87 1.86 1.86 1.81 1.78 1.77 1.75 1.72 ANG. 172.2 168.4 165.0 161.0 157.1 153.7 149.9 146.8 142.8 139.4 136.1 132.9 129.4 125.7 122.6 119.1 MAG. 0.00094 0.00189 0.00230 0.00286 0.00364 0.00353 0.00419 0.00495 0.00509 0.00530 0.00550 0.00601 0.00582 0.00572 0.00553 0.00514 ANG. 79.2 80.4 79.5 79.9 75.2 71.8 70.7 65.5 62.7 66.6 63.8 58.2 60.6 58.5 56.3 56.3 MAG. 0.989 0.987 0.986 0.984 0.981 0.978 0.975 0.972 0.968 0.963 0.960 0.956 0.950 0.945 0.941 0.936 ANG. –4.2 –6.1 –7.9 –9.8 –11.5 –13.4 –15.2 –17.2 –19.1 –20.8 –22.8 –24.5 –26.3 –28.0 –29.9 –31.7 900 950 1000 0.900 0.890 0.876 –51.2 –54.0 –56.4 1.70 1.67 1.65 115.8 112.6 109.3 0.00543 0.00506 0.00469 52.9 52.4 51.9 0.930 0.924 0.919 –33.4 –35.2 –37.0 Rev.3.00 Aug 10, 2005 page 6 of 7 3SK296 Package Dimensions JEITA Package Code RENESAS Code SC-82A Package Name PTSP0004ZA-A CMPAK-4(T) / CMPAK-4(T)V D MASS[Typ.] 0.006g A e2 e Q b1 c B B E HE LP Reference Symbol L A A x M L1 S A e2 A2 e l1 b5 S b c A A1 y S b2 A3 b e1 b1 b3 c1 c1 c A-A Section l1 b4 B-B Section Pattern of terminal position areas A A1 A2 A3 b b1 b2 b3 c c1 D E e e2 HE L L1 LP x y b4 b5 e1 l1 Q Dimension in Millimeters Min 0.8 0 0.8 0.25 0.35 0.1 1.8 1.15 1.8 0.3 0.1 0.2 Nom 0.9 0.25 0.32 0.42 0.3 0.4 0.13 0.11 2.0 1.25 0.65 0.6 2.1 Max 1.1 0.1 1.0 0.4 0.5 0.15 2.2 1.35 2.4 0.7 0.5 0.6 0.05 0.05 0.45 0.55 1.5 0.9 0.2 Ordering Information Part Name 3SK296ZQ-TL-E Quantity 3000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Aug 10, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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