Datasheet - International Rectifier

PD - 96255
IRF7316GPbF
HEXFET® Power MOSFET
l
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Generation V Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Surface Mount
Fully Avalanche Rated
Lead-Free
Halogen-Free
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
VDSS = -30V
RDS(on) = 0.058Ω
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current…
TA = 25°C
TA = 70°C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
TA = 25°C
Maximum Power Dissipation …
TA = 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Symbol
Maximum
VDS
V GS
-30
± 20
-4.9
-3.9
-30
-2.5
2.0
1.3
140
-2.8
0.20
-5.0
-55 to + 150
ID
IDM
IS
PD
EAS
IAR
EAR
dv/dt
TJ, TSTG
Units
V
A
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient…
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Symbol
Limit
Units
RθJA
62.5
°C/W
1
07/10/09
IRF7316GPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
I GSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
–––
–––
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V GS = 0V, ID = -250µA
0.022 ––– V/°C Reference to 25°C, ID = -1mA
0.042 0.058
V GS = -10V, ID = -4.9A „
Ω
0.076 0.098
V GS = -4.5V, ID = -3.6A „
––– –––
V
V DS = V GS, ID = -250µA
7.7 –––
S
V DS = -15V, I D = -4.9A
––– -1.0
V DS = -24V, VGS = 0V
µA
––– -25
V DS = -24V, VGS = 0V, TJ = 55°C
––– 100
V GS = -20V
nA
––– -100
V GS = 20V
23
34
I D = -4.9A
3.8 5.7
nC V DS = -15V
5.9 8.9
V GS = -10V, See Fig. 10 „
13
19
V DD = -15V
13
20
I D = -1.0A
ns
34
51
R G = 6.0Ω
32
48
R D = 15Ω „
710 –––
V GS = 0V
380 –––
pF
V DS = -25V
180 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
V SD
t rr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-2.5
–––
–––
-30
A
––– -0.78 -1.0
––– 44
66
––– 42
63
V
ns
nC
Conditions
D
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -1.7A, VGS = 0V ƒ
TJ = 25°C, IF = -1.7A
di/dt = 100A/µs ƒ
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 35mH
RG = 25Ω, IAS = -2.8A.
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ƒ ISD ≤ -2.8A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Surface mounted on FR-4 board, t ≤ 10sec.
2
IRF7316GPbF
100
100
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
10
-3.0V
20µs PULSE WIDTH
TJ = 25°C
A
1
0.1
1
10
-3.0V
20µs PULSE WIDTH
TJ = 150°C
A
1
10
0.1
-VDS, Drain-to-Source Voltage (V)
1
10
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
100
-ISD , Reverse Drain Current (A)
-I D , Drain-to-Source Current (A)
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
TJ = 25°C
TJ = 150°C
10
V DS = -10V
20µs PULSE WIDTH
1
3.0
3.5
4.0
4.5
5.0
5.5
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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6.0
A
TJ = 150°C
10
TJ = 25°C
VGS = 0V
1
0.4
0.6
0.8
1.0
1.2
A
1.4
-VSD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
3
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
RDS (on) , Drain-to-Source On Resistance (Ω)
IRF7316GPbF
-4.9A
ID =-4.9A
1.5
1.0
0.5
0.0
-60 -40 -20
-10V
VGS =-10V
0
20
40
60
0.6
0.5
0.4
0.3
0.1
VGS = -10V
0.0
80 100 120 140 160
0
TJ , Junction Temperature ( °C)
10
20
300
I D = -4.9A
0.04
0.00
3
6
9
12
-VGS , Gate -to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
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15
A
EAS , Single Pulse Avalanche Energy (mJ)
0.12
0
A
Fig 6. Typical On-Resistance Vs. Drain
Current
0.16
0.08
30
-I D , Drain Current (A)
Fig 5. Normalized On-Resistance
Vs. Temperature
RDS (on) , Drain-to-Source On Resistance (Ω)
V GS = -4.5V
0.2
ID
-1.3A
-2.2A
BOTTOM -2.8A
TOP
250
200
150
100
50
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
150
4
IRF7316GPbF
VGS = 0V
C, Capacitance (pF)
1200
20
f = 1 MHz
Ciss = Cgs + Cgd + Cds
Crss = Cgd
Coss = Cds + Cgd
1000
Ciss
800
Coss
600
400
Crss
200
0
1
ID = -4.9A
SHORTED
-VGS , Gate-to-Source Voltage (V)
1400
10
100
A
VDS =-15V
16
12
8
4
0
0
10
20
30
40
QG , Total Gate Charge (nC)
- V DS , Drain-to-Source Voltage (V)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Thermal Response (Z thJA )
100
0.50
0.20
10
0.10
0.05
0.02
1
P DM
0.01
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7316GPbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
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SO-8 Part Marking Information
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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6
IRF7316GPbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2009
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7