Datasheet - International Rectifier

PD -96259
IRF7406GPbF
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HEXFET® Power MOSFET
Generation V Technology
Ultra Low On-Resistance
P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
Halogen-Free
A
D
1
8
S
2
7
D
S
3
6
D
G
4
5
D
S
VDSS = -30V
RDS(on) = 0.045Ω
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
SO-8
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques. Power dissipation of greater than 0.8W
is possible in a typical PCB mount application.
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
V GS
dv/dt
TJ, TSTG
10 Sec. Pulsed Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
Units
-6.7
-5.8
-3.7
-23
2.5
0.02
± 20
-5.0
-55 to + 150
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
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Maximum Junction-to-Ambient„
Typ.
Max.
Units
–––
50
°C/W
1
07/10/09
IRF7406GPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min. Typ. Max. Units
Conditions
-30 ––– –––
V
VGS = 0V, ID = -250µA
––– -0.020 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.045
VGS = -10V, I D = -2.8A ƒ
Ω
––– ––– 0.070
VGS = -4.5V, ID = -2.4A ƒ
-1.0 ––– –––
V
VDS = VGS, ID = -250µA
3.1 ––– –––
S
VDS = -15V, ID = -2.8A
––– ––– -1.0
VDS = -24V, VGS = 0V
µA
––– ––– -25
VDS = -24V, VGS = 0V, TJ = 125°C
––– ––– -100
VGS = -20V
nA
––– ––– 100
VGS = 20V
––– ––– 59
ID = -2.8A
––– ––– 5.7
nC VDS = -2.4V
––– ––– 21
VGS = -10V, See Fig. 6 and 12 ƒ
––– 16 –––
VDD = -15V
––– 33 –––
ID = -2.8A
ns
––– 45 –––
RG = 6.0Ω
––– 47 –––
RD = 5.3Ω, See Fig. 10 ƒ
LD
Internal Drain Inductance
–––
LS
Internal Source Inductance
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 1100 –––
––– 490 –––
––– 220 –––
V(BR)DSS
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
2.5
4.0
D
–––
nH
Between lead tip
and center of die contact
pF
VGS = 0V
VDS = -25V
ƒ = 1.0MHz, See Fig. 5
–––
G
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
-3.1
–––
–––
-23
–––
–––
–––
–––
42
64
-1.0
63
96
A
V
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
S
TJ = 25°C, IS = -2.0A, VGS = 0V ƒ
TJ = 25°C, IF = -2.8A
di/dt = 100A/µs ƒ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ ISD ≤ -2.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS,
„ Surface mounted on FR-4 board, t ≤ 10sec.
max. junction temperature. ( See fig. 11 )
TJ ≤ 150°C
2
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IRF7406GPbF
1000
1000
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
100
-4.5V
10
20µs PULSE WIDTH
TJ = 25°C
A
1
0.1
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
-I D , Drain-to-Source Current (A)
-ID , Drain-to-Source Current (A)
TOP
1
10
100
-4.5V
10
20µs PULSE WIDTH
TJ = 150°C
1
0.1
100
1
-VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-ID , Drain-to-Source Current (A)
1000
TJ = 25°C
100
TJ = 150°C
VDS = -15V
20µs PULSE WIDTH
4
5
6
7
8
9
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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A
100
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
10
10
A
I D = -4.7A
1.5
1.0
0.5
VGS = -10V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7406GPbF
2500
-VGS , Gate-to-Source Voltage (V)
2000
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = Cds + C gd
Ciss
1500
Coss
1000
Crss
500
0
1
10
100
I D = -2.8A
VDS = -24V
16
12
8
4
A
FOR TEST CIRCUIT
SEE FIGURE 12
0
0
20
-VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
A
60
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
TJ = 150°C
TJ = 25°C
1
VGS = 0V
0.1
0.3
0.6
0.9
-VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
40
A
1.2
100us
10
1ms
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7406GPbF
6.0
V DS
-ID , Drain Current (A)
5.0
V GS
RD
D.U.T.
RG
-
+
4.0
V DD
-10V
3.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
1.0
VDS
90%
0.0
25
50
75
100
125
TC , Case Temperature ( ° C)
150
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
PDM
0.02
1
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7406GPbF
Current Regulator
Same Type as D.U.T.
50KΩ
QG
.2µF
12V
.3µF
-10V
QGS
D.U.T.
QGD
+VDS
VGS
VG
-3mA
IG
Charge
Fig 12a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 12b. Gate Charge Test Circuit
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IRF7406GPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
‚
-
-
„
+
**

RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS*
+
-
*
V DD
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-Channel HEXFETS
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7
IRF7406GPbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
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SO-8 Part Marking Information
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRF7406GPbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2009
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