IRLML6401PbF-1
HEXFET® Power MOSFET
VDS
RDS(on) max
(@VGS = -4.5V)
Qg (typical)
ID
(@TA = 25°C)
-12
V
0.05
Ω
10
nC
-4.3
A
G 1
3 D
S
2
Micro3™
Features
Industry-standard pinout SOT-23 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
Standard Pack
Base Part Number
Package Type
IRLML6401TRPbF-1
Micro3™ (SOT-23)
Form
Quantity
Tape and Reel
3000
Orderable Part Number
IRLML6402TRPbF-1
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-12
-4.3
-3.4
-34
1.3
0.8
0.01
33
± 8.0
-55 to + 150
V
A
W
W/°C
mJ
V
°C
Thermal Resistance
Parameter
RθJA
1
Maximum Junction-to-Ambient
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Typ.
Max.
Units
75
100
°C/W
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IRLML6401PbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-12 ––– –––
V
VGS = 0V, ID = -250μA
––– -0.007 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.050
VGS = -4.5V, ID = -4.3A
Ω
––– 0.085
VGS = -2.5V, ID = -2.5A
––– 0.125
VGS = -1.8V, ID = -2.0A
-0.40 -0.55 -0.95
V
VDS = VGS, ID = -250μA
8.6 ––– –––
S
VDS = -10V, ID = -4.3A
––– ––– -1.0
VDS = -12V, VGS = 0V
μA
––– ––– -25
VDS = -9.6V, VGS = 0V, TJ = 55°C
––– ––– -100
VGS = -8.0V
nA
––– ––– 100
VGS = 8.0V
––– 10
15
ID = -4.3A
––– 1.4 2.1
nC VDS = -10V
––– 2.6 3.9
VGS = -5.0V
––– 11 –––
VDD = -6.0V
ns
––– 32 –––
ID = -1.0A
––– 250 –––
RD = 6.0Ω
––– 210 –––
RG = 89Ω
––– 830 –––
VGS = 0V
––– 180 –––
pF
VDS = -10V
––– 125 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
t rr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-1.3
–––
–––
-34
–––
–––
–––
–––
22
8.0
-1.2
33
12
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -1.3A, VGS = 0V
TJ = 25°C, IF = -1.3A
di/dt = -100A/μs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 300μs; duty cycle ≤ 2%.
Surface mounted on 1" square single layer 1oz. copper FR4 board,
steady state.
Starting TJ = 25°C, L = 3.5mH
RG = 25Ω, IAS = -4.3A.
2
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IRLML6401PbF-1
100
VGS
-7.0V
-5.0V
-4.5V
-3.0V
-2.5V
- 1.8V
-1.5V
BOTTOM -1.0V
100
VGS
-7.0V
-5.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM -1.0V
10
1
-1.0V
0.1
20μs PULSE WIDTH
Tj = 25°C
TOP
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
TOP
10
1
-1.0V
0.1
20μs PULSE WIDTH
Tj = 150°C
0.01
0.01
0.1
1
10
0.1
100
Fig 1. Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (Α )
T J = 25°C
T J = 150°C
1.0
VDS = -12V
20μs PULSE WIDTH
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-V GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3
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100
Fig 2. Typical Output Characteristics
100.0
0.1
10
-VDS, Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
10.0
1
ID = -4.3A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRLML6401PbF-1
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
800
600
400
Coss
Crss
200
VDS =-10V
6
4
2
0
1
10
ID = -4.3A
8
0
100
0
4
12
16
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
-IID , Drain Current (A)
100
TJ = 150 ° C
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.6
1.0
1.4
1.8
-VSD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
8
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
-ISD , Reverse Drain Current (A)
C, Capacitance(pF)
1000
10
-VGS , Gate-to-Source Voltage (V)
1200
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10us
10
100us
1ms
1
10ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
0.1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLML6401PbF-1
EAS , Single Pulse Avalanche Energy (mJ)
5.0
-ID , Drain Current (A)
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
TC , Case Temperature ( ° C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
80
ID
-1.9A
-3.4A
BOTTOM -4.3A
TOP
60
40
20
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
PDM
0.02
0.01
1
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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October 28, 2014
10
0.09
0.08
0.07
0.06
0.05
Id = -4.3A
0.04
0.03
0.02
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0.20
VGS = -1.8V
VGS = -2.5V
0.15
0.10
VGS = -4.5V
0.05
0.00
0
10
-VGS, Gate -to -Source Voltage ( V )
20
30
-I D , Drain Current ( A )
Fig 12. Typical On-Resistance Vs.
Gate Voltage
Fig 13. Typical On-Resistance Vs.
Drain Current
0.8
-VGS(th) Gate threshold Voltage (V)
RDS(on) , Drain-to -Source Voltage ( Ω )
0.10
RDS ( on ) , Drain-to-Source On Resistance ( Ω )
IRLML6401PbF-1
0.7
ID = -250μA
0.6
0.5
0.4
0.3
-75
-50
-25
0
25
50
75
100
125
150
T J , Temperature ( °C )
Fig 14. Typical Threshold Voltage Vs.
Junction Temperature
6
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October 28, 2014
40
IRLML6401PbF-1
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
S
Y
M
B
O
L
6
5
D
3
6
ccc
2
C B A
D
E
E1
e
5
B
e
A
A1
A2
b
c
E
E1
1
DIMENSIONS
e1
L
L1
0
aaa
e1
bbb
ccc
4
INCHES
MIN
MAX
.036
.044
.0004
.0039
.035
.040
.0119
.0196
.0032
.0078
.111
.119
.083
.103
.048
.055
.0375 BSC
.075 BSC
.0158
.0236
.0118 BSC
0°
8°
.004
.008
.006
MILLIMET ERS
MAX
MIN
0.89
1.12
0.01
0.10
0.88
1.02
0.30
0.50
0.08
0.20
3.04
2.80
2.10
2.64
1.40
1.20
0.95 BSC
1.90 BSC
0.40
0.60
0.25 BSC
0°
8°
0.10
0.20
0.15
H
A A2
L1
3X b
A1
bbb
aaa C
C A B
3 SURF
0
7
3X L
RECOMMENDED FOOT PRINT
3X
NOT ES
1. DIMENS IONING AND T OLERANCING PER ASME Y14.5M-1994.
0.972
[.038]
2. DIMENS IONS ARE S HOWN IN MILLIMETERS AND INCHES .
2.742
[.1079]
3. CONT ROLLING DIMENS ION: MILLIMET ER.
4 DATUM PLANE H IS LOCATED AT T HE MOLD PART ING LINE.
5 DATUM A AND B T O B E DET ERMINED AT DAT UM PLANE H.
6 DIMENS IONS D AND E1 ARE MEAS URED AT DAT UM PLANE H.
7 DIMENS ION L IS T HE LEAD LENGTH FOR S OLDERING T O A S UBS T RATE.
8. OUT LINE CONFORMS TO JEDEC OUT LINE T O-236AB.
0.95
[.0375]
3X
0.802
[.031]
1.90
[.075]
Micro3 (SOT-23 / TO-236AB) Part Marking Information
W = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
DATE CODE
PART NUMBER
LEAD FREE
YEAR
INDUS TRIAL VERSION
Cu WIRE
HALOGEN FREE
LOT CODE
X = PART NUMBER CODE REFERENCE:
A = IRLML2402
B = IRLML2803
C = IRLML6302
D = IRLML5103
E = IRLML6402
F = IRLML6401
G = IRLML2502
H = IRLML5203
I = IRLML0030
J = IRLML2030
K = IRLML0100
L = IRLML0060
M = IRLML0040
N = IRLML2060
P = IRLML9301
R = IRLML9303
S = IRLML6244
T = IRLML6246
U = IRLML6344
V = IRLML6346
W = IRFML8244
X = IRLML2244
Y = IRLML2246
Z = IRFML9244
Note: A line above the work week
(as s hown here) indicates Lead - Free.
2011
2012
2013
2014
2015
2016
2017
2018
2019
2020
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
Y
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
W = (27-52) IF PRECEDED BY A LETTER
YEAR
2011
2012
2013
2014
2015
2016
2017
2018
2019
2020
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
Y
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
7
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October 28, 2014
IRLML6401PbF-1
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
1.32 ( .051 )
1.12 ( .045 )
1.85 ( .072 )
1.65 ( .065 )
4.1 ( .161 )
3.9 ( .154 )
TR
3.55 ( .139 )
3.45 ( .136 )
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
8.3 ( .326 )
7.9 ( .312 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
†
Qualification information
Industrial
Qualification level
(per JEDE C JE S D47F
Moisture Sensitivity Level
Micro3™ (SOT-23)
RoHS compliant
††
guidelines)
MS L1
††
(per JEDE C J-S T D-020D )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Revision History
Date
10/28/2014
Comment
• Updated partmarking to reflect Industrial partmarking on page 7.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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October 28, 2014