RENESAS BB305M

BB305M
Built in Biasing Circuit MOS FET IC
UHF/VHF RF Amplifier
REJ03G0829-0600
(Previous ADE-208-607D)
Rev.6.00
Aug.10.2005
Features
•
•
•
•
Built in Biasing Circuit; To reduce using parts cost & PC board space.
Superior cross modulation characteristics.
High gain; (PG = 28 dB typ. at f = 200 MHz)
Wide supply voltage range;
Applicable with 5V to 9V supply voltage.
• Withstanding to ESD;
Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4(SOT-143Rmod)
Outline
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
2
3
1
4
Notes:
1. Marking is “EW –”.
2. BB305M is individual type number of RENESAS BBFET.
Rev.6.00 Aug 10, 2005 page 1 of 9
1. Source
2. Gate1
3. Gate2
4. Drain
BB305M
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Symbol
VDS
VG1S
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Ratings
12
+10
–0
±10
25
150
150
–55 to +150
VG2S
ID
Pch
Tch
Tstg
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Symbol
V(BR)DSS
V(BR)G1SS
Min
12
+10
Typ
—
—
Max
—
—
Unit
V
V
Test conditions
ID = 200 µA, VG1S = VG2S = 0
IG1 = +10 µA, VG2S = VDS = 0
Gate2 to source breakdown voltage
Gate1 to source cutoff current
V(BR)G2SS
IG1SS
±10
—
—
—
—
+100
V
nA
IG2 = ±10 µA, VG1S = VDS = 0
VG1S = +9 V, VG2S = VDS = 0
Gate2 to source cutoff current
Gate1 to source cutoff voltage
IG2SS
VG1S(off)
—
0.4
—
—
±100
1.0
nA
V
Gate2 to source cutoff voltage
VG2S(off)
0.4
—
1.0
V
Input capacitance
Output capacitance
Reverse transfer capacitance
Drain current
Ciss
Coss
Crss
ID(op) 1
2.3
1.1
—
10
2.8
1.5
0.017
15
3.5
1.9
0.04
20
pF
pF
pF
mA
VG2S = ±9 V, VG1S = VDS = 0
VDS = 5 V, VG2S = 4 V
ID = 100 µA
VDS = 5 V, VG1S = 5 V
ID = 100 µA
VDS = 5 V, VG1 = 5 V
VG2S =4 V, RG = 82 kΩ
f = 1 MHz
ID(op) 2
—
13
—
mA
VDS = 9 V, VG1 = 9 V, VG2S = 6 V
RG = 220 kΩ
|yfs|1
23
28
—
mS
VDS = 5 V, VG1 = 5 V, VG2S = 4 V
RG =82 kΩ, f = 1 kHz
|yfs|2
—
28
—
mS
VDS = 9 V, VG1 = 9 V, VG2S = 6 V
RG = 220 kΩ, f = 1 kHz
PG1
24
28
—
dB
VDS = 5 V, VG1 = 5 V, VG2S = 4 V
RG = 82 kΩ, f = 200 MHz
PG2
—
28
—
dB
VDS = 9 V, VG1 = 9 V, VG2S = 6 V
RG = 220 kΩ, f = 200 MHz
NF1
—
1.4
1.9
dB
VDS = 5 V, VG1 = 5 V, VG2S = 4 V
RG = 82 kΩ, f = 200 MHz
NF2
—
1.4
—
dB
VDS = 9 V, VG1 = 9 V, VG2S = 6 V
RG = 220 kΩ, f = 200 MHz
Forward transfer admittance
Power gain
Noise figure
Rev.6.00 Aug 10, 2005 page 2 of 9
VDS = 5 V, VG1 = 5 V, VG2S = 4 V
RG = 82 kΩ
BB305M
Main Characteristics
Test Circuit for Operating Items (ID(op) , |yfs|, Ciss, Coss, Crss, NF, PG)
VG2
VG1
RG
Gate 2
Gate 1
Drain
Source
A
ID
200MHz Power Gain, Noise Figure Test Circuit
1000p
1000p
47k
Input(50Ω)
VT
VG2
VT
1000p
1000p
47k
BBFET
47k
1000p
L2
L1
10p max
1000p
1000p
36p
Output(50Ω)
1SV70
RG
RFC
82k
1SV70
1000p
VD = VG1
L1 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC : φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
Rev.6.00 Aug 10, 2005 page 3 of 9
Unit : Resistance (Ω)
Capacitance (F)
BB305M
Typical Output Characteristics
25
100
50
20
15
10
5
RG =
0
50
100
150
0
200
Ambient Temperature Ta (°C)
82 k Ω
100 k Ω
120 k Ω
150 k Ω
180 k Ω
10
5
0
RG = 220 kΩ
0.8
1.6
2.4
3.2
12
3V
2V
4
0
4.0
VG2S = 1 V
1
2
3
4
5
Gate1 Voltage VG1 (V)
Drain Current vs. Gate1 Voltege
Drain Current vs. Gate1 Voltege
20
20
VDS = 5 V
RG = 82 kΩ
Drain Current ID (mA)
16
12
4V
3V
8
2V
4
VG2S = 1 V
0
4V
8
Gate2 to Source Voltage VG2S (V)
16
5
16
68 k Ω
15
4
VDS = 5 V
RG = 68 kΩ
56 k Ω
20
3
20
Ω
Drain Current ID (mA)
Drain Current ID (mA)
47 k
2
Drain Current vs. Gate1 Voltage
25
VDS = VG1 = 5 V
1
kΩ
68 Ω
k
82 k Ω
0
10 k Ω
0
12 k Ω
150 k Ω
180
kΩ
220
Drain to Source Voltage VDS (V)
Drain Current vs.
Gate2 to Source Voltage
Drain Current ID (mA)
47
kΩ kΩ
150
VG2S = 4 V
VG1 = VDS
56
200
Drain Current ID (mA)
Channel Power Dissipation Pch (mW)
Maximum Channel Power
Dissipation Curve
1
2
3
Gate1 Voltage VG1 (V)
Rev.6.00 Aug 10, 2005 page 4 of 9
4
5
VDS = 5 V
RG = 100 kΩ
12
4V
8
3V
2V
4
VG2S = 1 V
0
1
2
3
4
Gate1 Voltage VG1 (V)
5
BB305M
Forward Transfer Admittance
vs. Gate1 Voltage
30
VDS = 5 V
RG = 68 kΩ
f = 1 kHz
24
4V
3V
18
2V
12
6
VG2S = 1 V
0
1
2
3
5
4
Forward Transfer Admittance |yfs | (mS)
Forward Transfer Admittance |yfs| (mS)
Forward Transfer Admittance
vs. Gate1 Voltage
30
24
18
2V
12
6
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage VG1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
Power Gain vs. Gate Resistance
40
30
VDS = 5 V
RG = 100 kΩ
f = 1 kHz
24
4V
Power Gain PG (dB)
Forward Transfer Admittance |yfs| (mS)
4V
3V
Gate1 Voltage VG1 (V)
3V
18
2V
12
6
V G2S = 1 V
0
1
2
3
4
35
30
25
20
15
10
10
5
Gate1 Voltage VG (V)
50
100 200
500 1000
40
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
f = 200 MHz
Power Gain PG (dB)
35
2
1
0
10
20
Power Gain vs. Drain Current
4
3
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
f = 200 MHz
Gate Resistance RG (kΩ)
Noise Figure vs. Gate Resistance
Noise Figure NF (dB)
VDS = 5 V
RG = 82 kΩ
f = 1 kHz
20
50
100 200
500 1000
Gate Resistance RG (kΩ)
Rev.6.00 Aug 10, 2005 page 5 of 9
30
25
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
RG = variable
f = 200 MHz
20
15
10
0
5
10
15
20
25
Drain Current ID (mA)
30
BB305M
Noise Figure vs. Drain Current
30
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
RG = variable
f = 200 MHz
3
25
Drain Current ID (mA)
Noise Figure NF (dB)
4
Drain Current vs. Gate Resistance
2
1
0
5
10
15
20
25
20
15
10
5
0
10
30
Drain Current ID (mA)
50
500 1000
100 200
Input Capacitance vs.
Gate2 to Source Voltage
60
6
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
RG = 82 kΩ
f = 200 MHz
50
40
Input Capacitance Ciss (pF)
Gain Reduction GR (dB)
20
Gate Resistance RG (kΩ)
Gain Reduction vs.
Gate2 to Source Voltage
30
20
10
0
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
1
2
3
4
5
Gate2 to Source Voltage VG2S (V)
Rev.6.00 Aug 10, 2005 page 6 of 9
5
4
3
2
VDS = 5 V
VG1 = 5 V
RG = 82 kΩ
f = 1 MHz
1
0
0
1
2
3
4
5
Gate2 to Source Voltage VG2S (V)
BB305M
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
.8
1
90°
1.5
.6
Scale: 1 / div.
60°
120°
2
.4
3
30°
150°
4
5
.2
10
.2
0
.4
.6 .8 1
1.5 2
3 45
10
180°
0°
–10
–5
–4
–.2
–3
–.4
–30°
–150°
–2
–.6
–.8
–1
–60°
–120°
–1.5
–90°
Test Condition : VDS = 5 V , VG1 = 5 V
VG2S = 4 V , RG = 82 kΩ
50 to 1000 MHz (50 MHz step)
Test Condition : VDS = 5 V , VG1 = 5 V
VG2S = 4 V , RG = 82 kΩ
50 to 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
90°
Scale: 0.002 / div.
.8
60°
120°
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1
1.5 2
3 45
10
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–60°
–120°
–90°
Test Condition : VDS = 5 V , VG1 = 5 V
VG2S = 4 V , RG = 82 kΩ
50 to 1000 MHz (50 MHz step)
Rev.6.00 Aug 10, 2005 page 7 of 9
–2
–.6
–.8
–1
–1.5
Test Condition : VDS = 5 V , VG1 = 5 V
VG2S = 4 V , RG = 82 kΩ
50 to 1000 MHz (50 MHz step)
BB305M
S Parameter
(VDS = VG1 = 5V, VG2S = 4V, RG = 82kΩ, Zo = 50Ω)
f (MHz)
S11
S21
S12
S22
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
MAG.
0.991
0.991
0.982
0.975
0.972
0.956
0.942
0.928
0.920
0.906
0.894
0.880
0.868
0.854
0.842
0.835
ANG.
–4.8
–9.9
–15.4
–20.7
–25.6
–30.6
–35.5
–40.1
–44.9
–49.2
–53.6
–57.8
–62.1
–66.2
–70.3
–73.9
MAG.
2.69
2.68
2.66
2.62
2.60
2.54
2.47
2.42
2.38
2.32
2.25
2.18
2.12
2.06
2.00
1.94
ANG.
174.9
169.3
163.4
157.5
152.0
146.3
140.9
135.7
130.5
125.7
120.8
116.2
111.5
106.8
102.5
98.4
MAG.
0.00090
0.00153
0.00243
0.00293
0.00370
0.00444
0.00478
0.00535
0.00551
0.00549
0.00584
0.00542
0.00562
0.00509
0.00465
0.00427
ANG.
91.4
90.5
73.8
74.9
70.1
69.0
63.7
64.8
56.8
58.6
54.4
53.3
49.5
48.6
49.7
51.6
MAG.
0.991
0.992
0.991
0.989
0.985
0.981
0.977
0.973
0.967
0.962
0.957
0.952
0.944
0.939
0.933
0.927
ANG.
–2.2
–4.8
–7.5
–9.9
–12.6
–15.0
–17.3
–19.7
–22.0
–24.5
–26.9
–29.2
–31.5
–33.8
–36.1
–38.3
850
900
950
1000
0.820
0.802
0.801
0.789
–77.7
–81.5
–84.7
–87.9
1.89
1.83
1.78
1.73
94.0
89.6
85.6
82.1
0.00416
0.00289
0.00288
0.00241
53.3
57.9
72.9
78.9
0.921
0.915
0.909
0.904
–40.5
–42.7
–44.9
–47.1
Rev.6.00 Aug 10, 2005 page 8 of 9
BB305M
Package Dimensions
JEITA Package Code
RENESAS Code
SC-61AA
Package Name
PLSP0004ZA-A
MASS[Typ.]
MPAK-4 / MPAK-4V
D
0.013g
A
e
e2
b1
Q
c
B
B
E
HE
Reference
Symbol
L
A
LP
L1
A
A3
x M S
b
A
e2
A2
e
I1
A
b5
S
b
b2
e1
A1
y S
b1
b3
c1
c
c1
I1
c
b4
A-A Section
B-B Section
Pattern of terminal position areas
A
A1
A2
A3
b
b1
b2
b3
c
c1
D
E
e
e2
HE
L
L1
LP
x
y
b4
b5
e1
I1
Q
Dimension in Millimeters
Min
1.0
0
1.0
0.35
0.55
0.1
2.7
1.35
2.2
0.35
0.15
0.25
Nom
1.1
0.25
0.42
0.62
0.4
0.6
0.13
0.11
1.5
0.95
0.85
2.8
Max
1.3
0.1
1.2
0.5
0.7
0.15
3.1
1.65
3.0
0.75
0.55
0.65
0.05
0.05
0.55
0.75
1.95
1.05
0.3
Ordering Information
Part Name
BB305MEW-TL-E
Quantity
3000
Shipping Container
φ 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.6.00 Aug 10, 2005 page 9 of 9
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
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Colophon .3.0