2SK2737 Silicon N Channel MOS FET High Speed Power Switching REJ03G1031-0400 (Previous: ADE-208-533B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220C•FM) D 1. Gate 2. Drain 3. Source G 12 Rev.4.00 Sep 07, 2005 page 1 of 6 3 S 2SK2737 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID Ratings 30 ±20 45 180 45 30 150 –55 to +150 ID(pulse)Note1 IDR PchNote2 Tch Tstg Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 3. Pulse test Rev.4.00 Sep 07, 2005 page 2 of 6 Symbol V(BR)DSS V(BR)GSS Min 30 ±20 Typ — — Max — — Unit V V Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 IGSS IDSS VGS(off) RDS(on) — — 1.0 — — 20 — — — — — — — — — — — — 10 15 30 1570 1100 410 32 300 180 200 1.0 75 ±10 10 2.0 14 25 — — — — — — — — — — µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns VGS = ±16 V, VDS = 0 VDS = 30 V, VGS = 0 ID = 1 mA, VDS = 10 VNote3 ID = 20 A, VGS = 10 VNote3 ID = 20 A, VGS = 4 VNote3 ID = 20 A, VDS = 10 VNote3 RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr VDS = 10 V, VGS = 0, f = 1MHz VGS = 10 V, ID = 20 A, RL = 0.5 Ω IF = 45 A, VGS = 0 IF = 45 A, VGS = 0 diF/ dt = 50A/ µs 2SK2737 Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 500 30 O pe ra tio n Operation in (T c this area is = 25 limited by RDS(on) °C 5 2 ) 1 Ta = 25°C 0.5 0.1 0.3 1 200 ) ot sh (1 10 s 150 m 100 C s 50 D 20 µs m 0 50 µs 1 10 0 100 10 20 10 10 = Drain Current ID (A) 200 PW Channel Dissipation Pch (W) 40 3 30 10 100 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 10 V 8 V 100 100 6V Pulse Test Drain Current ID (A) Drain Current ID (A) 5V 80 4.5 V 4V 60 40 3.5 V 20 3V 25°C Tc = –25°C 80 75°C 60 40 20 VDS = 10 V Pulse Test VGS = 2.5 V 2 4 6 8 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 1.0 Pulse Test 0.8 0.6 ID = 50 A 0.4 20 A 0.2 10 A 0 0 10 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.4.00 Sep 07, 2005 page 3 of 6 Static Drain to Source on State Resistance RDS (on) (mΩ) Drain to Source Saturation Voltage VDS (on) (V) 0 100 Pulse Test 50 20 VGS = 4 V 10 V 10 5 1 2 5 10 20 Drain Current ID (A) 50 100 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance vs. Temperature 50 Pulse Test 40 30 10 A ID = 20 A 20 VGS = 4 V 50 A 10, 20 A 10 10 V 0 –40 0 40 80 120 160 50 20 10 75°C 2 1 0.5 0.1 0.3 1 3 10 30 Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 5000 Capacitance C (pF) 500 200 100 50 20 di / dt = 50 A / µs VGS = 0, Ta = 25°C 0.3 1 3 10 30 2000 100 Ciss 1000 Coss 500 Crss 200 100 VGS = 0 f = 1 MHz 50 0 100 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics ID = 45 A 16 40 VGS VDD = 5 V 10 V 15 V VDS 12 8 20 10 4 VDD = 15 V 10 V 5V 20 40 60 80 Gate Charge Qg (nc) Rev.4.00 Sep 07, 2005 page 4 of 6 0 100 1000 Switching Time t (ns) 20 50 0 VDS = 10 V Pulse Test Drain Current ID (A) 10000 30 25°C 5 1000 10 0.1 Tc = –25°C Case Temperature TC (°C) Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Reverse Recovery Time trr (ns) Static Drain to Source on State Resistance RDS (on) (mΩ) 2SK2737 500 td(off) 200 tf 100 tr 50 td(on) VGS = 10 V, VDD = 10 V PW = 5 µs, duty < 1 % 20 10 0.1 0.3 1 3 10 30 Drain Current ID (A) 100 2SK2737 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 100 10 V 80 5V 60 VGS = 0, –5 V 40 20 Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 VSD (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 4.17°C/W, Tc = 25°C 0.1 0.05 0.03 0.01 10 µ PDM 0.02 1 0.0 t ho lse D= PW T PW pu T 1s 100 µ 1m 10 m Pulse Width 100 m 1 10 PW (S) Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor Vin D.U.T. RL Vin 10 V 50 Ω Vout VDD = 10 V 10% 10% 90% td(on) Rev.4.00 Sep 07, 2005 page 5 of 6 10% tr 90% td(off) tf 2SK2737 Package Dimensions RENESAS Code Package Name MASS[Typ.] PRSS0003AE-A TO-220CFM / TO-220CFMV 1.9g 0.6 ± 0.1 2.54 4.1 ± 0.3 1.0 ± 0.2 1.15 ± 0.2 φ 3.2 ± 0.2 12.0 ± 0.3 10.0 ± 0.3 2.54 Unit: mm 4.5 ± 0.3 2.7 ± 0.2 15.0 ± 0.3 2.5 ± 0.2 13.6 ± 1.0 JEITA Package Code 0.7 ± 0.1 Ordering Information Part Name 2SK2737-E Quantity 50 pcs Shipping Container Plastic magazine Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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