2SK3229 Silicon N Channel MOS FET High Speed Power Switching REJ03G1095-0200 (Previous: ADE-208-766) Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220C•FM) D 1. Gate 2. Drain 3. Source G 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 3 S 2SK3229 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg Value 80 ±20 60 240 60 50 181 35 150 –55 to +150 Unit V V A A A A mJ W °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch ≤ 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 3 Symbol V (BR) DSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr Min 80 — — 1.0 — — 50 — — — — — — — — — — — — Typ — — — — 6.0 8.0 85 9700 1250 290 150 30 30 80 280 780 340 1.0 80 Max — ±0.1 10 2.5 7.5 12 — — — — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 80 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 30 A, VGS = 10 V Note 4 ID = 30 A, VGS = 4 V Note 4 ID = 30 A, VDS = 10 V Note 4 ID = 10 V VGS = 0 f = 1 MHz VDD = 25 V VGS = 25 V ID = 60 A ID = 30 A VGS = 10 V RL = 1 Ω IF = 60 A, VGS = 0 IF = 60 A, VGS = 0 diF/dt = 50 A/µs 2SK3229 Package Dimensions RENESAS Code Package Name MASS[Typ.] PRSS0003AE-A TO-220CFM / TO-220CFMV 1.9g 0.6 ± 0.1 2.54 4.1 ± 0.3 1.0 ± 0.2 1.15 ± 0.2 φ 3.2 ± 0.2 12.0 ± 0.3 10.0 ± 0.3 2.54 Unit: mm 4.5 ± 0.3 2.7 ± 0.2 15.0 ± 0.3 2.5 ± 0.2 13.6 ± 1.0 JEITA Package Code 0.7 ± 0.1 Ordering Information Part Name 2SK3229-E Quantity 50 pcs Shipping Container Plastic magazine Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 3 of 3 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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