20V P-Channel Enhancement

LESHAN RADIO COMPANY, LTD.
20V P-Channel Enhancement-Mode MOSFET
VDS= -20V
LP4101LT1G
S-LP4101LT1G
RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100 mΩ
RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ
Features
3
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Fully Characterized Avalanche Voltage and Current
1
Improved Shoot-Through FOM
2
we declare that the material of product
SOT– 23 (TO–236AB)
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
3
D
▼ Simple Drive Requirement
▼ Small Package Outline
G
▼ Surface Mount Device
1
2
S
Ordering Information
Device
Marking
Shipping
LP4101LT1G
S-LP4101LT1G
P41
3000/Tape & Reel
LP4101LT3G
S-LP4101LT3G
P41
10,000/Tape & Reel
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Symbol
Limit
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
±8
Continuous Drain Current
ID
-2.3
Pulsed Drain Current 1)
IDM
-8
Parameter
o
Maximum Power Dissipation
TA = 25 C
PD
o
TA = 75 C
V
A
0.9
W
0.57
TJ, Tstg
Operating Junction and Storage Temperature Range
2)
RqJA
o
-55 to 150
RqJC
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance (PCB mounted)
Unit
o
140
Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation
2
2. 1-in
2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
Rev .O 1/5
C
C/W
LESHAN RADIO COMPANY, LTD.
LP4101LT1G , S-LP4101LT1G
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = -250uA
-20
-
-
V
Drain-Source On-State Resistance
RDS(on)
VGS = -4.5V, ID = -2.8A
69
100
mΩ
Drain-Source On-State Resistance
RDS(on)
VGS = -2.5V, ID = -2.0A
83
150
mΩ
Gate Threshold Voltage
VGS(th)
VDS =VGS, ID = -250uA
Zero Gate Voltage Drain Current
IDSS
VDS = -9.6V, VGS = 0V
Gate Body Leakage
IGSS
VGS = ±8V, VDS = 0V
Gate Resistance
Rg
Forward Transconductance
gfs
Static
Dynamic
-0.45
-0.95
V
-1
uA
±100
nA
Ω
VDS = -5V, ID = -4.0A
6.5
S
3)
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = -6V, ID = -2.8A
VGS = -4.5V
15.23
nC
5.49
2.74
17.28
VDD = -6V, RL = 6Ω
ΙD = −1Α, VGEN = -4.5V
RG = 6Ω
3.73
ns
36.05
6.19
882.51
VDS = -6V, VGS = 0V
f = 1.0 MHz
pF
145.54
97.26
Source-Drain Diode
Max. Diode Forward Current
IS
Diode Forward Voltage
VSD
IS = -0.75A, VGS = 0V
-0.8
-2.4
A
-1.2
V
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
Rev .O 2/5
LESHAN RADIO COMPANY, LTD.
LP4101LT1G , S-LP4101LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
20
Vds=5V
16
25°C
Id , DRAIN CUR RENT(A)
Id DRAIN CURRENT(A )
18
14
12
10
8
6
4
2
0
18
16
14
Vgs=2V
12
10
8
6
Vgs=1.5V
4
2
0
0
0.5
1
1.5
2
Vgs, GA TE-TO-SOURCE VOLTAGE(V)
2.5
0
0.5
Figure 1. Transfer Characteristics
0.5
0.45
0.4
0.35
Vgs=1.5V
0.3
0.25
0.2
Vgs=2V
0.15
0.1
0.05
Vgs=2.5V
0
0
1
2
3
4
5
Id- Drain curren t
1
1.5
2
2.5
3
3.5
4
Vds ,DRAIN-TO-S OURCE VOLTA GE(V)
4.5
5
Figure 2. On–Region Characteristics
Rds(on) -On-Resista nce(Ω)
Rds(on) -On-Resistance(Ω)
Vgs=2.5V
25°C
6
7
Figure 3. On–Resistance versus Drain Current
8
0.5
0.45
0.4
0.35
0.3
0.25
Id=3.5A
0.2
0.15
0.1
0.05
0
0
2
4
6
Vgs-Gate-to- Source Voltag e(V)
Figure 4. On-Resistance vs. Gate-to-Source Voltage
Rev .O 3/5
8
LESHAN RADIO COMPANY, LTD.
LP4101LT1G , S-LP4101LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
12
1800
1600
10
Ca pa ci ta nc e
1400
Vgs(V)
8
6
4
1200
Ciss
1000
800
600
Coss
400
2
200
Crss
0
0
0
5
10
15
20
25
0
30
1
2
3
Figure 5. Gate Charge
5
6
7
Figure 6. Capacitance
120
0
-0.1
100
-0.2
80
VGS(TH)(V)
Rd s( on ) (m R )
4
V ds
Qgs(nC)
VGS=-4.5V ID=2A
60
40
-0.3
-0.4
-0.5
-0.6
ID=250uA
-0.7
-0.8
20
-0.9
0
-50
0
50
100
150
Temp( o C)
Figure 7. On-Resistance Vs.Junction Temperature
-1
-50
0
50
100
Temp( o C)
Figure 8. Vth Vs.Junction Temperature
Rev .O 4/5
150
LESHAN RADIO COMPANY, LTD.
LP4101LT1G , S-LP4101LT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
A
B
C
D
G
H
J
G
C
D
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
DIM
B S
H
K
J
K
L
S
V
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev .O 5/5