30V N-Channel Enhancement

LESHAN RADIO COMPANY, LTD.
30V N-Channel Enhancement-Mode MOSFET
●APPLICATIONS
LN4812LT1G
1) Advanced trench process technology
2) High Density Cell Design For Ultra Low On-Resistance
3) High Power and Current Handling Capability
3
●FEATURES
1) VDS= 30V
2) RDS(ON), [email protected], [email protected] A = 38 Ω
3) RDS(ON), [email protected], [email protected] = 52 Ω
4) We declare that the material of product compliant with
RoHS requirements and Halogen Free.
1
2
SOT– 23 (TO–236AB)
3 D
●DEVICE MARKING AND ORDERING INFORMATION
Device
LN4812LT1G
LN4812LT1G
Marking
N48
N48
G
Shipping
3000/Tape&Reel
10000/Tape&Reel
1
2
S
●MAXIMUM RATINGS(Ta = 25℃)
Limits
30
±20
6
30
TA = 25°C
1.4
Maximum Power Dissipation
PD
TA = 75°C
0.8
Operating and Storage Temperature Range TJ, Tstg –55 to +150
Thermal Resistance-Junction to Ambient
(Note2)
RθJA
90
Junction-to-Case Thermal Resistance
RθJC
50
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Symbol
VDSS
VGS
ID
IDM
Unit
V
V
A
A
W
°C
°C/W
°C/W
1. Repetitive Rating: Pulse width limited by the Maximum junction temperationr
2
2. 1-in 2oz Cu PCB board
May,2015
Rev.A 1/4
LESHAN RADIO COMPANY, LTD.
LN4812LT1G
●ELECTRICAL CHARACTERISTICS (Ta= 25℃)
STATIC
Parameter
Symbol
Min.
Drain−to−Source Breakdown
Voltage
V(BR)DSS
30
VGS(th)
Gate Threshold Voltage
1
IDSS
Zero Gate Voltage Drain Current
–
IGSS
Gate−to−Source Leakage Current
–
Drain−to−Source On
–
RDS(on)
Resistance(Note3)
–
Forward Transconductance
gFS
–
Typ.
–
1.5
–
–
35
22
15.4
Max.
–
3
1
±100
52
38
–
DYNAMIC
Total Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
–
–
–
–
–
–
–
13
4.2
3.1
9
14
30
5
20
–
–
–
–
–
–
Input Capacitance
Ciss
–
610
–
Output Capacitance
Coss
–
100
–
Reverse Transfer Capacitance
Crss
–
77
–
SOURCE-DRAIN DIODE
Forward Diode Voltage
VSD
–
–
–
–
1.3
3
Is
Max.Diode Forward Current
3. Pulse Test: Pulse width≤300μs, duty cycle ≤2%.
May,2015
Unit Conditions
V VGS=0 V, ID=250uA
V VGS=VDS, ID=250uA
uA VDS=-24V, VGS=0V
nA VDS= 0V, VGS=±20V
m Ω VGS= 4.5V, ID=5 A
m Ω VGS=10V, ID=6 A
S VDS=5V, ID=6.9A
VGS =-15V,
nC V DS = 8.5V,
ID = 10A
VDD = 15V, RL =15 Ω
ns ΙD = 1Α, VGEN = 10V
RG = 6 Ω
VGS = 0 V,
pF f = 1.0 MHz,
VDS= 15V
V
V
VGS=0V, IS=1A
Rev.A 2/4
LESHAN RADIO COMPANY, LTD.
LN4812LT1G
ELECTRICAL CHARACTERISTIC CURVES
18
VDS=6V
14
ID, Drain Current (A)
ID, Drain Current (A)
16
12
10
8
6
4
2
20
18
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
VDS, Drain-to-Source Voltage (V)
VGS=3.0V
VGS=3.5V
VGS=4.0V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS, Gate-to-Source Voltage (V)
FIG.2 On-Region Characteristics
0.9
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
RDSon, On-Resistance (Ω)
RDSon, On-Resistance (Ω)
FIG.1 Transfer Characteristics
0
VGS=3.0V
5
10
15
ID, Drain Current (A)
VGS=3.5V
VGS=4.0V
FIG.3 On-Resistance versus Drain Current
May,2015
ID=5A
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
3
3.2
3.4
3.6
3.8
VGS, Gate-to-Source Voltage (V)
FIG.4 On- Resistance vs. Gate-to-Source
4
Voltage
Rev.A 3/4
LESHAN RADIO COMPANY, LTD.
LN4812LT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
DIM
B S
G
C
D
H
K
J
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
A
B
C
D
G
H
J
K
L
S
V
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
May,2015
inches
mm
Rev.A 4/4