LESHAN RADIO COMPANY, LTD. LSI1012LT1G S-LSI1012LT1G N-Channel 1.8-V (G-S) MOSFET FEATURES D D D D D D D 3 TrenchFETr Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 0.7 W Low Threshold: 0.8 V (typ) Fast Switching Speed: 10 ns S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 SOT-23 BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation Gate 1 3 APPLICATIONS Source 2 D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers (Top View) MARKING DIAGRAM 3 Device Marking Shipping LSI1012LT1G S-LSI1012LT1G LSI1012LT3G S-LSI1012LT3G A2 3000/Tape&Reel A2 10000/Tape&Reel A2 1 M ORDERING INFORMATION 2 A2 = Specific Device Code M = Month Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "6 Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (diode conduction)b Maximum Power Dissipation Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) TA = 25_C TA = 85_C ID IS PD V 500 600 400 IDM Unit 350 1000 275 mA 250 225 mW TJ, Tstg −55 to 150 _C ESD 2000 V Notes d. Pulse width limited by maximum junction temperature. e. Surface Mounted on FR4 Board. Rev .O 1/6 Drain LESHAN RADIO COMPANY, LTD. LSI1012LT1G , S-LSI1012LT1G SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 0.45 Typ Max Unit 0.9 V "0.5 "1.0 mA 0.3 100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea rDS(on) VDS = 0 V, VGS = "4.5 V VDS = 20 V, VGS = 0 V 5 VDS = 20 V, VGS = 0 V, TJ = 85_C VDS = 5 V, VGS = 4.5 V 700 mA mA VGS = 4.5 V, ID = 600 mA 0.41 0.70 VGS = 2.5 V, ID = 500 m A 0.53 0.85 1.25 VGS = 1.8 V, ID = 350 m A 0.70 gfs VDS = 10 V, ID = 400 mA 1.0 VSD IS = 150 mA, VGS = 0 V 0.8 W S 1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs 750 VDS = 10 V, VGS = 4.5 V, ID = 250 mA 75 Gate-Drain Charge Qgd 225 Turn-On Delay Time td(on) 5 Rise Time Turn-Off Delay Time Fall Time tr td(off) tf VDD = 10 V, RL = 47 W ID ^ 200 mA, VGEN = 4.5 V, RG = 10 W pC 5 ns 25 11 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Rev .O 2/6 LESHAN RADIO COMPANY, LTD. LSI1012LT1G , S-LSI1012LT1G TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 1200 1.0 TC = −55_C 1000 VGS = 5 thru 1.8 V ID - Drain Current (mA) I D − Drain Current (A) 0.8 0.6 0.4 0.2 25_C 800 125_C 600 400 200 1V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 VDS − Drain-to-Source Voltage (V) 1.0 3.2 80 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 100 2.4 1.6 VGS = 1.8 V VGS = 4.5 V 200 400 600 800 Ciss 60 40 Coss 20 VGS = 2.5 V 0 Crss 0 1000 0 4 ID − Drain Current (mA) Gate Charge 12 16 20 On-Resistance vs. Junction Temperature 1.60 VDS = 10 V ID = 250 mA rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 8 VDS − Drain-to-Source Voltage (V) 5 4 3 2 1 0 0.0 2.5 Capacitance 4.0 0.0 2.0 VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.8 1.5 1.40 VGS = 4.5 V ID = 600 mA 1.20 VGS = 1.8 V ID = 350 mA 1.00 0.80 0.2 0.4 0.6 Qg − Total Gate Charge (nC) 0.8 0.60 −50 −25 0 25 50 75 100 TJ − Junction Temperature (_C) Rev .O 3/6 125 LESHAN RADIO COMPANY, LTD. LSI1012LT1G , S-LSI1012LT1G TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 5 1000 100 TJ = 25_C TJ = −55_C 10 1 0.0 4 r DS(on) − On-Resistance ( W ) I S − Source Current (mA) TJ = 125_C ID = 350 mA 3 ID = 200 mA 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1 VSD − Source-to-Drain Voltage (V) Threshold Voltage Variance vs. Temperature 3 4 5 6 IGSS vs. Temperature 0.3 3.0 0.2 2.5 ID = 0.25 mA 2.0 IGSS − (mA) 0.1 −0.0 1.5 −0.1 1.0 −0.2 0.5 VGS = 4.5 V −0.3 −50 −25 0 25 50 75 100 0.0 −50 125 −25 TJ − Temperature (_C) 0 25 50 75 100 TJ − Temperature (_C) BVGSS vs. Temperature BVGSS − Gate-to-Source Breakdown Voltage (V) V GS(th) Variance (V) 2 VGS − Gate-to-Source Voltage (V) 7 6 5 4 3 2 1 0 −50 −25 0 25 50 75 100 125 T − Temperature (_C) Rev .O 4/6 125 LESHAN RADIO COMPANY, LTD. LSI1012LT1G , S-LSI1012LT1G TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 833_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Rev .O 5/6 LESHAN RADIO COMPANY, LTD. LSI1012LT1G , S-LSI1012LT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 A B C D G H J G C D MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0034 0.0140 0.0350 0.0830 0.0177 0.0070 0.0285 0.0401 0.1039 0.0236 DIM B S H K J K L S V MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev .O 6/6