General Purpose Transistors NPN Silicon

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
• Moisture Sensitivity Level: 1
• ESD Rating – Human Body Model: >4000 V
LBC846ALT1G
Series
ESD Rating – Machine Model: >400 V
•
We declare that the material of product compliance with RoHS
requirements.
•
S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable
S-LBC846ALT1G
Series
3
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Symbol
VCEO
1
2
SOT–23
Vdc
80
50
30
VEBO
LBC846
LBC847, LBC850
LBC848, LBC849
Collector Current – Continuous
Vdc
VCBO
LBC846
LBC847, LBC850
LBC848, LBC849
Emitter–Base Voltage
Unit
65
45
30
LBC846
LBC847, LBC850
LBC848, LBC849
Collector–Base Voltage
Value
3
COLLECT OR
Vdc
6.0
6.0
5.0
1
B ASE
IC
100
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board
(Note 1.)
TA = 25°C
Derate above 25°C
PD
225
mW
2
EMIT T ER
THERMAL CHARACTERISTICS
Thermal Resistance,
Junction to Ambient (Note 1.)
Total Device Dissipation
Alumina Substrate (Note 2.)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient (Note 2.)
Junction and Storage
Temperature Range
MARKING DIAGRAM
3
1.8
mW/°C
RqJA
556
°C/W
PD
300
mW
2.4
mW/°C
RqJA
417
°C/W
TJ, Tstg
–55 to
+150
°C
xx
1
2
xx= Device Marking
(See Table Below)
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Rev.O 1/13
LESHAN RADIO COMPANY, LTD.
LBC846ALT1G Series,S-LBC846ALT1G Series
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Package
Shipping
LBC846ALT1G
S-LBC846ALT1G
LBC846ALT3G
S-LBC846ALT3G
LBC846BLT1G
S-LBC846BLT1G
LBC846BLT3G
S-LBC846BLT3G
LBC847ALT1G
S-LBC847ALT1G
LBC847ALT3G
S-LBC847ALT3G
LBC847BLT1G
S-LBC847BLT1G
LBC847BLT3G
S-LBC847BLT3G
1A
SOT-23
3000/Tape&Reel
1A
SOT-23
10000/Tape&Reel
1B
SOT-23
3000/Tape&Reel
1B
SOT-23
10000/Tape&Reel
1E
SOT-23
3000/Tape&Reel
LBC847CLT1G
S-LBC847CLT1G
LBC847CLT3G
S-LBC847CLT3G
LBC848ALT1G
S-LBC848ALT1G
1E
SOT-23
10000/Tape&Reel
1F
SOT-23
3000/Tape&Reel
1F
SOT-23
10000/Tape&Reel
1G
SOT-23
3000/Tape&Reel
1G
SOT-23
10000/Tape&Reel
1J
SOT-23
3000/Tape&Reel
LBC848ALT3G
S-LBC848ALT3G
1J
SOT-23
10000/Tape&Reel
LBC848BLT1G
S-LBC848BLT1G
LBC848BLT3G
S-LBC848BLT3G
LBC848CLT1G
S-LBC848CLT1G
LBC848CLT3G
S-LBC848CLT3G
LBC849BLT1G
S-LBC849BLT1G
LBC849BLT3G
S-LBC849BLT3G
LBC849CLT1G
S-LBC849CLT1G
LBC849CLT3G
S-LBC849CLT3G
LBC850BLT1G
S-LBC850BLT1G
LBC850BLT3G
S-LBC850BLT3G
1K
SOT-23
3000/Tape&Reel
1K
SOT-23
10000/Tape&Reel
1L
SOT-23
3000/Tape&Reel
1L
SOT-23
10000/Tape&Reel
2B
SOT-23
3000/Tape&Reel
2B
SOT-23
10000/Tape&Reel
2C
SOT-23
3000/Tape&Reel
2C
SOT-23
10000/Tape&Reel
2F
SOT-23
3000/Tape&Reel
2F
SOT-23
10000/Tape&Reel
LBC850CLT1G
S-LBC850CLT1G
LBC850CLT3G
S-LBC850CLT3G
2G
SOT-23
3000/Tape&Reel
2G
SOT-23
10000/Tape&Reel
Rev.O 2/13
LESHAN RADIO COMPANY, LTD.
LBC846ALT1G Series,S-LBC846ALT1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage LBC846A,B
(IC = 10 mA)
LBC847A,B,C, LBC850B,C
LBC848A,B,C, LBC849B,C
V(BR)CEO
65
45
30
–
–
–
–
–
–
V
Collector–Emitter Breakdown Voltage LBC846A,B
(IC = 10 µA, VEB = 0)
LBC847A,B,C, LBC850B,C
LBC848A,B,C, LBC849B,C
V(BR)CES
80
50
30
–
–
–
–
–
–
V
OFF CHARACTERISTICS
Collector–Base Breakdown Voltage
(IC = 10 mA)
LBC846A,B
LBC847A,B,C, LBC850B,C
LBC848A,B,C, LBC849B,C
V(BR)CBO
80
50
30
–
–
–
–
–
–
V
Emitter–Base Breakdown Voltage
(IE = 1.0 mA)
LBC846A,B
LBC847A,B,C, LBC850B,C
LBC848A,B,C, LBC849B,C
V(BR)EBO
6.0
6.0
5.0
–
–
–
–
–
–
V
ICBO
–
–
–
–
15
5.0
nA
µA
110
200
180
290
220
450
420
520
800
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
hFE
(IC = 2.0 mA, VCE = 5.0 V)
LBC846A, LBC847A, LBC848A
LBC846B, LBC847B, LBC848B,
LBC849B, LBC850B
LBC847C, LBC848C, LBC849C, LBC850C
–
Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
–
–
–
–
0.25
0.6
V
Base–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
–
–
0.7
0.9
–
–
V
Base–Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base–Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
–
660
–
700
770
mV
fT
100
–
–
MHz
Cobo
–
–
4.5
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure (IC = 0.2 mA,
(VCE = 5.0 Vdc, RS = 2.0 kΩ
f = 1.0 kHz, BW = 200 Hz)
NF
LBC846A,B, LBC847A,B,C, LBC848A,B,C
LBC849B,C, LBC850B,C
pF
dB
–
–
–
–
10
4.0
Rev.O 3/13
LESHAN RADIO COMPANY, LTD.
LBC846ALT1G Series,S-LBC846ALT1G Series
LBC846A, LBC847A, LBC848A
0.18
150°C
VCE = 1 V
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
300
200
25°C
−55°C
100
0
0.001
0.01
0.1
0.12
25°C
0.10
0.08
0.06
−55°C
0.04
0.02
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
150°C
IC, COLLECTOR CURRENT (A)
−55°C
IC/IB = 20
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
IC/IB = 20
0.14
0
1
1.0
0.9
0.16
0.0001
0.001
0.01
0.1
1.2
1.1
VCE = 5 V
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
Rev.O 4/13
LESHAN RADIO COMPANY, LTD.
LBC846ALT1G Series,S-LBC846ALT1G Series
LBC846A, LBC847A, LBC848A
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
1.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
IC = 50 mA
IC = 100 mA
0.8
0.4
0
0.02
10
C, CAPACITANCE (pF)
2.0
2.4
2.8
20
Figure 5. Collector Saturation Region
Figure 6. Base−Emitter Temperature Coefficient
1.0
7.0
TA = 25°C
Cib
3.0
Cob
2.0
1.0
1.6
10
1.0
IC, COLLECTOR CURRENT (mA)
0.1
10
5.0
-55°C to +125°C
1.2
IB, BASE CURRENT (mA)
0.4 0.6 0.8 1.0
2.0
20
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
40
0.2
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
2.0
100
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
Figure 8. Current−Gain − Bandwidth Product
Rev.O 5/13
50
LESHAN RADIO COMPANY, LTD.
LBC846ALT1G Series,S-LBC846ALT1G Series
LBC846B
0.30
VCE = 1 V
150°C
500
400
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
600
25°C
300
−55°C
200
100
0
0.001
0.01
0.1
0.10
−55°C
0.05
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 9. DC Current Gain vs. Collector
Current
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
IC/IB = 20
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
25°C
0.15
IC, COLLECTOR CURRENT (A)
−55°C
0.9
25°C
0.8
0.7
150°C
0.6
0.5
0.4
0.3
0.2
150°C
0.20
0
1
1.1
1.0
IC/IB = 20
0.25
0.0001
0.001
0.01
0.1
1.2
1.1
VCE = 5 V
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Base Emitter Saturation Voltage vs.
Collector Current
Figure 12. Base Emitter Voltage vs. Collector
Current
Rev.O 6/13
LESHAN RADIO COMPANY, LTD.
LBC846ALT1G Series,S-LBC846ALT1G Series
2.0
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
LBC846B
TA = 25°C
1.6
20 mA
50 mA
100 mA
200 mA
1.2
IC =
10 mA
0.8
0.4
0
0.02
0.05
0.1
1.0 2.0
0.2
0.5
IB, BASE CURRENT (mA)
5.0
10
1.4
1.8
qVB for VBE
2.6
3.0
20
0.2
Figure 13. Collector Saturation Region
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT
C, CAPACITANCE (pF)
TA = 25°C
20
Cib
10
6.0
2.0
Cob
0.1
0.2
0.5
5.0
1.0 2.0
10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. Capacitance
50
0.5
10 20
50
1.0 2.0
5.0
IC, COLLECTOR CURRENT (mA)
100
200
Figure 14. Base−Emitter Temperature Coefficient
40
4.0
-55°C to 125°C
2.2
100
500
VCE = 5 V
TA = 25°C
200
100
50
20
1.0
5.0 10
50 100
IC, COLLECTOR CURRENT (mA)
Figure 16. Current−Gain − Bandwidth Product
Rev.O 7/13
LESHAN RADIO COMPANY, LTD.
LBC846ALT1G Series,S-LBC846ALT1G Series
LBC847B, LBC848B, LBC849B, LBC850B
0.30
VCE = 1 V
150°C
500
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
600
400
25°C
300
−55°C
200
100
0
0.001
0.01
0.1
0.10
−55°C
0.05
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 18. Collector Emitter Saturation Voltage
vs. Collector Current
IC/IB = 20
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
25°C
0.15
Figure 17. DC Current Gain vs. Collector
Current
−55°C
0.9
25°C
0.8
0.7
150°C
0.6
0.5
0.4
0.3
0.2
150°C
0.20
0
1
1.1
1.0
IC/IB = 20
0.25
0.0001
0.001
0.01
0.1
1.2
1.1
VCE = 5 V
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 19. Base Emitter Saturation Voltage vs.
Collector Current
Figure 20. Base Emitter Voltage vs. Collector
Current
Rev.O 8/13
LESHAN RADIO COMPANY, LTD.
LBC846ALT1G Series,S-LBC846ALT1G Series
LBC847B, LBC848B, LBC849B, LBC850B
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
IC = 50 mA
IC = 100 mA
0.8
0.4
0
0.02
0.1
10
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
20
10
1.0
IC, COLLECTOR CURRENT (mA)
0.2
IB, BASE CURRENT (mA)
Figure 22. Base−Emitter Temperature
Coefficient
10
C, CAPACITANCE (pF)
7.0
5.0
TA = 25°C
Cib
3.0
Cob
2.0
1.0
4.0 6.0 8.0 10
0.4 0.6 0.8 1.0
2.0
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 23. Capacitances
40
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 21. Collector Saturation Region
100
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
50
Figure 24. Current−Gain − Bandwidth Product
Rev.O 9/13
LESHAN RADIO COMPANY, LTD.
LBC846ALT1G Series,S-LBC846ALT1G Series
LBC847C, LBC848C, LBC849C, LBC850C
hFE, DC CURRENT GAIN
0.30
150°C
900
VCE = 1 V
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
1000
800
700
25°C
600
500
400 −55°C
300
200
100
0
0.001
0.01
−55°C
0.05
0.0001
0.001
0.01
0.1
Figure 25. DC Current Gain vs. Collector
Current
Figure 26. Collector Emitter Saturation Voltage
vs. Collector Current
IC/IB = 20
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.10
IC, COLLECTOR CURRENT (A)
−55°C
0.9
25°C
0.8
0.7
150°C
0.6
0.5
0.4
0.3
0.2
25°C
0.15
IC, COLLECTOR CURRENT (A)
1.1
1.0
150°C
0.20
0
1
0.1
IC/IB = 20
0.25
0.0001
0.001
0.01
0.1
1.2
1.1
VCE = 5 V
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 27. Base Emitter Saturation Voltage vs.
Collector Current
Figure 28. Base Emitter Voltage vs. Collector
Current
Rev.O 10/13
LESHAN RADIO COMPANY, LTD.
LBC846ALT1G Series,S-LBC846ALT1G Series
LBC847C, LBC848C, LBC849C, LBC850C
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
IC = 50 mA
IC = 100 mA
0.8
0.4
0
0.02
0.1
10
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
20
10
1.0
IC, COLLECTOR CURRENT (mA)
0.2
IB, BASE CURRENT (mA)
Figure 30. Base−Emitter Temperature
Coefficient
10
C, CAPACITANCE (pF)
7.0
5.0
TA = 25°C
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
20
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 31. Capacitances
40
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 29. Collector Saturation Region
100
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
50
Figure 32. Current−Gain − Bandwidth Product
Rev.O 11/13
LESHAN RADIO COMPANY, LTD.
LBC846ALT1G Series,S-LBC846ALT1G Series
1
1S
0.1
IC, COLLECTOR CURRENT (A)
100 mS 10 mS
1 mS
Thermal Limit
0.01
0.001
1
10
100
100 mS 10 mS
1 mS
0.1
1S
Thermal Limit
0.01
0.001
0.1
VCE, COLLECTOR EMITTER VOLTAGE (V)
1
10
100
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 33. Safe Operating Area for
LBC846A, LBC846B
Figure 34. Safe Operating Area for
LBC847A, LBC847B, LBC847C, LBC850B, LBC850C
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
1
100 mS 10 mS
1S
0.1
Thermal Limit
0.01
0.001
1 mS
0.1
1
10
100
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 35. Safe Operating Area for
LBC848A, LBC848B, LBC848C, LBC849B, LBC849C
Rev.O 12/13
LESHAN RADIO COMPANY, LTD.
LBC846ALT1G Series,S-LBC846ALT1G Series
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
L
3
1
V
2
B S
DIM
G
A
B
C
D
G
H
J
K
L
S
V
C
D
H
K
J
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 13/13