LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTD113ELT1G S-LDTD113ELT1G Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. 3 1 2 SOT-23 • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 BASE zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN −10 to +10 V Output current IC 500 mA Power dissipation Pd 200 mW Junction temperature Tj 150 C Storage temperature Tstg −55 to +150 C Parameter R1 3 COLLECTOR R2 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTD113ELT1G S-LDTD113ELT1G LDTD113ELT3G S-LDTD113ELT3G E4 1 1 3000/Tape & Reel E4 1 1 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Input current Output current Symbol Min. Typ. Max. VI(off) − − 0.5 VI(on) 3 − − VO(on) − 0.1 0.3 V II − − 7.2 mA VI=5V IO(off) − − 0.5 µA VCC=50V, VI=0V VO=5V, IO=50mA Unit V DC current gain GI 33 − − − Input resistance R1 0.7 1 1.3 kΩ Resistance ratio R2/R1 0.8 1 1.2 − − 200 − MHz Transition frequency fT ∗ Conditions VCC=5V, IO=100µA VO=0.3V, IO=20mA IO/II=50mA/2.5mA − − VCE=10V, IE= −50mA, f=100MHz ∗ Characteristics of built-in transistor Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LDTD113ELT1G ;S-LDTD113ELT1G zElectrical characteristic curves 100 10m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 20 10 Ta= −40 C 25 C 100 C 5 2 1 500m 2m 1m 500µ 200µ 100µ 50µ 20µ 10µ 5µ 200m 2µ 100m 500µ 1m 1µ 2m 0 5m 10m 20m 50m100m 200m 500m 0.5 Fig.1 Input voltage vs. output current (ON characteristics) 1k 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A) Fig.2 Output current vs. input voltage (OFF characteristics) 1 VO=5V 500 lO/lI=20 500m OUTPUT VOLTAGE : VO(on) (V) DC CURRENT GAIN : GI VCC=5V Ta=100 C 25 C −40 C 5m 50 Ta=100 C 25 C −40 C 200 100 50 20 10 5 2 Ta=100 C 25 C −40 C 200m 100m 50m 20m 10m 5m 2m 1 500µ 1m 2m 5m 10m 20m 50m100m200m 500m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current 1m 500 µ 1m 2m 5m 10m 20m 50m100m200m 500m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current Rev.O 2/3 LESHAN RADIO COMPANY, LTD. LDTD113ELT1G ;S-LDTD113ELT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 A B C D G H J G C D MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0034 0.0140 0.0350 0.0830 0.0177 0.0070 0.0285 0.0401 0.1039 0.0236 DIM B S H K J K L S V MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 3/3