LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTB113ELT1G S-LDTB113ELT1G Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. • We declare that the material of product compliance with RoHS requirements. • S - Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Supply voltage VCC −50 V Input voltage VIN −10 to +10 V Output current IC −500 mA Power dissipation PD 200 mW Junction temperature Tj 150 C Storage temperature Tstg −55 to +150 C Parameter 3 1 2 SOT–23 1 BASE R1 3 COLLECTOR R2 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTB113ELT1G S-LDTB113ELT1G LDTB113ELT3G S-LDTB113ELT3G K4 1 1 3000/Tape & Reel K4 1 1 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions VI(off) − − −0.5 V VCC= −5V, IO= −100µA VI(on) −3 − − V VO= −0.3V, IO= −20mA VO(on) − −0.1 −0.3 V II − − −7.2 mA IO(off) − − −0.5 µA GI 33 − − − Input resistance R1 0.7 1 1.3 kΩ − Resistance ratio R2/R1 0.8 1 1.2 − − − 200 − MHz Input voltage Output voltage Input current Output current DC current gain Transition frequency fT ∗ IO/II= −50mA/−2.5mA VI= −5V VCC= −50V, VI= 0V VO= −5V, IO= −50mA VCE= −10V, IE= 50mA, f= 100MHz ∗ Characteristics of built-in transistor Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LDTB113ELT1G ;S-LDTB113ELT1G zElectrical characteristic curves -100 -10m -5m VO= −0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : V I(on) (V) -50 -20 -1m -500µ -10 -5 -2 -2m Ta=−40 C 25 C 100 C VCC= −5V Ta=100 C 25 C −40 C -200µ -100µ -50µ -1 -500m -20µ -10µ -5µ -200m -100m -500µ -1m -2m -2µ -1µ 0 -5m -10m -20m -50m-100m-200m -500m OUTPUT CURRENT : IO ( A) -1 VO= −5V 50 (V) (on) Ta=100 C 25 C −40 C 20 10 5 2 OUTPUT VOLTAGE : VO DC CURRENT GAIN : GI 100 -1.5 -2.0 (off) -2.5 -3.0 ( V) Fig.2 Output current vs. input voltage (OFF characteristics) 500 200 -1.0 INPUT VOLTAGE : VI Fig.1 Input voltage vs. output current (ON characteristics) 1k -0.5 lO/lI=20 -500m Ta=100 C 25 C −40 C -200m -100m -50m -20m -10m -5m -2m 1 -500µ -1m -2m -5m -10m -20m -50m-100m-200m -500m -1m -500µ -1m -2m -5m -10m -20m -50m-100m-200m -500m OUTPUT CURRENT : IO (A) OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current Fig.4 Output voltage vs. output current Rev.O 2/3 LESHAN RADIO COMPANY, LTD. LDTB113ELT1G ;S-LDTB113ELT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 A B C D G H J G C D MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0034 0.0140 0.0350 0.0830 0.0177 0.0070 0.0285 0.0401 0.1039 0.0236 DIM B S H K J K L S V MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 3/3