LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G LBC847AWT1G,BWT1G CWT1G LBC848AWT1G,BWT1G CWT1G S-LBC846AWT1G,BWT1G S-LBC847AWT1G,BWT1G CWT1G S-LBC848AWT1G,BWT1G CWT1G General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION ( Pb– Free ) Device LBC846AWT1G S-LBC846AWT1G LBC846AWT3G S-LBC846AWT3G Package SC-70 Shipping 3000/Tape&Reel SC-70 10000/Tape&Reel MAXIMUM RATINGS Rating Symbol BC846 BC847 BC848 Unit Collector–Emitter Voltage V CEO 65 45 30 V Collector–Base Voltage V CBO 80 50 30 V Emitter–Base Voltage V 6.0 6.0 5.0 V 100 100 100 mAdc 3 1 Collector Current — Continuous EBO IC 2 SOT–323 /SC–70 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation PD 150 mW Thermal Resistance, Junction to Ambient R θJA 833 °C/W T J , T stg –55 to +150 °C Junction and Storage Temperature 3 COLLECTOR 1 BASE 2 EMITTER DEVICE MARKING LBC846AWT1G = 1A; LBC846BWT1G = 1B; LBC847AWT1G = 1E; LBC847BWT1G = 1F; LBC847CWT1G = 1G; LBC848AWT1G = 1J; LBC848BWT1G = 1K; LBC848CWT1G = 1L; ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max 65 45 30 80 50 30 80 50 30 6.0 6.0 5.0 — — — — — — — — — — — — — — — — — — — — — — — — — — — — 15 5.0 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mA) LBC846 Series LBC847 Series LBC848 Series V (BR)CEO Collector–Emitter Breakdown Voltage (IC = 10 µA, VEB = 0) LBC846 Series LBC847 Series LBC848 Series V (BR)CES Collector–Base Breakdown Voltage (IC = 10 µA) LBC846 Series LBC847 Series LBC848 Series V (BR)CBO Emitter–Base Breakdown Voltage (IE = 1.0 µA) LBC846 Series LBC847 Series LBC848 Series V (BR)EBO Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) I CBO v v v v nA µA 1.FR–5=1.0 x 0.75 x 0.062in Rev.O 1/9 LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G, LBC847AWT1G,BWT1G, CWT1G, LBC848AWT1G,BWT1G,CWT1G S-LBC846AWT1G,BWT1G, S-LBC847AWT1G,BWT1G, CWT1G, S-LBC848AWT1G,BWT1G,CWT1G ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit 110 200 420 180 290 520 220 450 800 — — — — 580 — — — 0.7 0.9 660 — 0.25 0.6 — — 700 770 fT 100 — — MHz Cobo NF — — 4.5 pF dB — — — — 10 4.0 ON CHARACTERISTICS DC Current Gain (I C = 2.0 mA, V CE = 5.0 V) h FE LBC846A, LBC847A, LBC848A LBC846B, LBC847B, LBC848B LBC847C, LBC848C Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) Collector–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) V CE(sat) Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) Base–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V) Base–Emitter Voltage (I C = 10 mA, V CE = 5.0 V) V BE(sat) V BE(on) V V mV SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz) Output Capacitance (V CB = 10 V, f = 1.0 MHz) Noise Figure (I C = 0.2 mA, LBC846A, LBC847A,L BC848A LBC846B, LBC847B,L BC848B V CE = 5.0 Vdc, R S = 2.0 kΩ, LBC847C, LBC848C f = 1.0 kHz, BW = 200 Hz) LBC846A, LBC847A, LBC848A 0.18 150°C VCE = 1 V VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 300 200 25°C −55°C 100 0 0.001 0.01 0.1 0.12 25°C 0.10 0.08 0.06 −55°C 0.04 0.02 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 150°C IC, COLLECTOR CURRENT (A) −55°C IC/IB = 20 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 IC/IB = 20 0.14 0 1 1.0 0.9 0.16 0.0001 0.001 0.01 0.1 1.2 1.1 VCE = 5 V 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Voltage vs. Collector Current Rev.O 2/9 LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G, LBC847AWT1G,BWT1G, CWT1G, LBC848AWT1G,BWT1G,CWT1G S-LBC846AWT1G,BWT1G, S-LBC847AWT1G,BWT1G, CWT1G, S-LBC848AWT1G,BWT1G,CWT1G LBC846A, LBC847A, LBC848A θVB, TEMPERATURE COEFFICIENT (mV/ °C) 1.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 10 2.0 2.4 2.8 20 Figure 5. Collector Saturation Region Figure 6. Base−Emitter Temperature Coefficient 1.0 7.0 C, CAPACITANCE (pF) 1.6 10 1.0 IC, COLLECTOR CURRENT (mA) 0.1 10 TA = 25°C 5.0 Cib 3.0 Cob 2.0 1.0 -55°C to +125°C 1.2 IB, BASE CURRENT (mA) 0.02 40 0.4 0.6 0.8 1.0 2.0 20 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 0.2 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) VCE , COLLECTOR-EMITTER VOLTAGE (V) 2.0 100 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 Figure 7. Capacitances 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 50 30 Figure 8. Current−Gain − Bandwidth Product LBC846B 0.30 500 400 VCE = 1 V 150°C VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 600 25°C 300 200 −55°C 100 0 0.001 0.01 0.1 1 IC/IB = 20 150°C 0.25 0.20 25°C 0.15 0.10 −55°C 0.05 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 9. DC Current Gain vs. Collector Current Figure 10. Collector Emitter Saturation Voltage vs. Collector Current Rev.O 3/9 LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G, LBC847AWT1G,BWT1G, CWT1G, LBC848AWT1G,BWT1G,CWT1G S-LBC846AWT1G,BWT1G, S-LBC847AWT1G,BWT1G, CWT1G, S-LBC848AWT1G,BWT1G,CWT1G LBC846B IC/IB = 20 1.0 −55°C 0.9 25°C 0.8 0.7 150°C 0.6 0.5 0.4 0.3 0.0001 0.001 0.01 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.1 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Base Emitter Saturation Voltage vs. Collector Current Figure 12. Base Emitter Voltage vs. Collector Current 2.0 1.0 TA = 25°C 1.6 20 mA 50 mA 100 mA 200 mA 1.2 IC = 10 mA 0.8 0.4 0 0.02 0.05 0.1 1.0 2.0 0.2 0.5 IB, BASE CURRENT (mA) 5.0 10 1.4 1.8 qVB for VBE 2.6 3.0 20 0.2 f, T CURRENT-GAIN - BANDWIDTH PRODUCT TA = 25°C 20 Cib 10 6.0 2.0 Cob 0.1 0.2 0.5 5.0 1.0 2.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 15. Capacitance 50 0.5 10 20 50 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) 100 200 Figure 14. Base−Emitter Temperature Coefficient 40 4.0 -55°C to 125°C 2.2 Figure 13. Collector Saturation Region C, CAPACITANCE (pF) VCE = 5 V 1.1 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.2 1.2 VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.1 100 500 VCE = 5 V TA = 25°C 200 100 50 20 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) Figure 16. Current−Gain − Bandwidth Product Rev.O 4/9 LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G, LBC847AWT1G,BWT1G, CWT1G, LBC848AWT1G,BWT1G,CWT1G S-LBC846AWT1G,BWT1G, S-LBC847AWT1G,BWT1G, CWT1G, S-LBC848AWT1G,BWT1G,CWT1G LBC847B, LBC848B 0.30 VCE = 1 V 150°C 500 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 600 400 25°C 300 −55°C 200 100 0 0.001 0.01 0.1 0.20 25°C 0.15 0.10 −55°C 0.05 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 17. DC Current Gain vs. Collector Current Figure 18. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) IC/IB = 20 −55°C 0.9 25°C 0.8 0.7 150°C 0.6 0.5 0.4 0.3 0.0001 0.001 0.01 0.1 1.2 VCE = 5 V 1.1 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 19. Base Emitter Saturation Voltage vs. Collector Current Figure 20. Base Emitter Voltage vs. Collector Current 2.0 1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) 150°C IC, COLLECTOR CURRENT (A) 1.0 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.25 1 1.1 0.2 IC/IB = 20 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 0.02 0.1 1.0 IB, BASE CURRENT (mA) Figure 21. Collector Saturation Region 10 20 -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 0.2 10 1.0 IC, COLLECTOR CURRENT (mA) Figure 22. Base−Emitter Temperature Coefficient Rev.O 5/9 100 LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G, LBC847AWT1G,BWT1G, CWT1G, LBC848AWT1G,BWT1G,CWT1G S-LBC846AWT1G,BWT1G, S-LBC847AWT1G,BWT1G, CWT1G, S-LBC848AWT1G,BWT1G,CWT1G 10 C, CAPACITANCE (pF) 7.0 TA = 25°C 5.0 Cib 3.0 Cob 2.0 1.0 4.0 6.0 8.0 10 0.4 0.6 0.8 1.0 2.0 20 VR, REVERSE VOLTAGE (VOLTS) 40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) LBC847B, LBC848B 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 Figure 23. Capacitances 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 50 30 Figure 24. Current−Gain − Bandwidth Product LBC847C, LBC848C, LBC849C, LBC850C hFE, DC CURRENT GAIN 0.30 150°C 900 VCE = 1 V VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 1000 800 700 25°C 600 500 400 −55°C 300 200 100 0 0.001 0.01 25°C 0.15 0.10 −55°C 0.05 0.0001 0.001 0.01 0.1 Figure 25. DC Current Gain vs. Collector Current Figure 26. Collector Emitter Saturation Voltage vs. Collector Current IC/IB = 20 VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.20 IC, COLLECTOR CURRENT (A) −55°C 0.9 25°C 0.8 0.7 150°C 0.6 0.5 0.4 0.3 0.2 150°C IC, COLLECTOR CURRENT (A) 1.1 1.0 0.25 0 1 0.1 IC/IB = 20 0.0001 0.001 0.01 0.1 1.2 1.1 VCE = 5 V 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 27. Base Emitter Saturation Voltage vs. Collector Current Figure 28. Base Emitter Voltage vs. Collector Current Rev.O 6/9 LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G, LBC847AWT1G,BWT1G, CWT1G, LBC848AWT1G,BWT1G,CWT1G S-LBC846AWT1G,BWT1G, S-LBC847AWT1G,BWT1G, CWT1G, S-LBC848AWT1G,BWT1G,CWT1G LBC847C, LBC848C 1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) 2.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 0.02 0.1 10 1.0 -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 20 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 IB, BASE CURRENT (mA) Figure 30. Base−Emitter Temperature Coefficient 10 C, CAPACITANCE (pF) 7.0 5.0 TA = 25°C Cib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 20 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 31. Capacitances 40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 29. Collector Saturation Region 100 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 32. Current−Gain − Bandwidth Product Rev.O 7/9 50 LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G, LBC847AWT1G,BWT1G, CWT1G, LBC848AWT1G,BWT1G,CWT1G S-LBC846AWT1G,BWT1G, S-LBC847AWT1G,BWT1G, CWT1G, S-LBC848AWT1G,BWT1G,CWT1G 1 1S 0.1 IC, COLLECTOR CURRENT (A) 100 mS 10 mS 1 mS Thermal Limit 0.01 0.001 1 10 100 100 mS 10 mS 1 mS 0.1 1S Thermal Limit 0.01 0.001 0.1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 33. Safe Operating Area for LBC846A, LBC846B Figure 34. Safe Operating Area for LBC847A, LBC847B, LBC847C 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 1 100 mS 10 mS 1S 0.1 Thermal Limit 0.01 0.001 1 mS 0.1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 35. Safe Operating Area for LBC848A, LBC848B, LBC848C Rev.O 8/9 LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G, LBC847AWT1G,BWT1G, CWT1G, LBC848AWT1G,BWT1G,CWT1G S-LBC846AWT1G,BWT1G, S-LBC847AWT1G,BWT1G, CWT1G, S-LBC848AWT1G,BWT1G,CWT1G SC-70 / SOT-323 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 3 E HE 1 2 b e A 0.05 (0.002) c A2 DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 SOLDERING FOOTPRINT* 0.65 0.025 0.016 0.010 0.087 0.053 0.055 0.095 1 XX M 1.9 0.075 = Specific Device Code = Date Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. 0.9 0.035 SCALE 10:1 0.079 MAX 0.040 0.004 XXM 0.65 0.025 0.7 0.028 0.012 0.004 0.071 0.045 0.047 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 GENERIC MARKING DIAGRAM L A1 MIN 0.032 0.000 mm inches Rev.O 9/9