20V N-Channel Enhancement

LESHAN RADIO COMPANY, LTD.
20V N-Channel Enhancement-Mode MOSFET
FEATURES
● RDS(ON)[email protected]=4.5V
LN2302ALT1G
S-LN2302ALT1G
● RDS(ON)[email protected]=2.5V
● RDS(ON)[email protected]=1.8V
● Super high density cell design for extremely low RDS(ON)
3
● Exceptional on-resistance and maximum DC current
capability
1
● S- Prefix for Automotive and Other Applications Requiring
2
SOT– 23
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
3
APPLICATIONS
● Power Management in Notebook
● Portable Equipment
● Load Switch
● DSC
1
Ordering Information
Device
Shipping
Marking
LN2302ALT1G
S-LN2302ALT1G
LN2302ALT3G
S-LN2302ALT3G
02A
3000/Tape& Reel
02A
10000/Tape& Reel
2
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain
TA=25℃
Current(tJ=150℃)
TA=70℃
Pulsed Drain Current
Maximum Body-Diode Continuous Current
2.8
ID
IDM
10
IS
1.6
TA=25℃
Maximum Power Dissipation
TA=70℃
Operating Junction Temperature
Maximum Junction-to-Ambient
Thermal Resistance-Junction to Case
A
2.2
A
1.25
PD
W
0.8
TJ
℃
150
T≦10 sec
77
Steady State
105
RthJA
RθJC
℃/W
℃/W
70
*The device mounted on 1in2 FR4 board with 2 oz copper
Rev .O 1/5
LESHAN RADIO COMPANY, LTD.
LN2302ALT1G , S-LN2302ALT1G
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Limit
Min
Typ
Max
0.9
1.2
Unit
STATIC PARAMETERS
V(BR)DSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250μA
20
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250μA
0.6
IGSS
Gate-Body Leakage Current
VDS=0V, VGS=±8V
±100
VDS=20V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
RDS(ON)
VSD
On-State Drain Current
a
Drain-Source On-Resistance
Diode Forward Voltage
10
VDS≧5V, VGS= 4.5V
6
VDS≧5V, VGS= 2.5V
4
A
VGS=4.5V, ID= 2.8A
55
85
VGS=2.5V, ID= 2.5A
65
115
VGS=1.8V, ID= 2.2A
80
130
0.75
1.2
IS=1A, VGS=0V
nA
μA
VDS=20V, VGS=0V
TJ=55℃
ID(ON)
V
mΩ
V
DYNAMIC PARAMETERS
Qg
Total Gate Charge
9
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
3
Ciss
Input Capacitance
450
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
22
td(on)
Turn-On Delay Time
9
tr
Rise Time
VDD=10V, RL =10Ω
23
td(off)
Turn-Off Delay Time
VGEN=4.5Ω, RG=6Ω
38
tf
Fall Time
VDS=10V, VGS=4.5V, ID=2.8A
VDS=10V, VGS=0V, f=1MHZ
nC
2.2
pF
72
ns
3
Notes:
a. Pulse test; pulse width ≦ 300us, duty cycle≦ 2%
Rev .O 2/5
LESHAN RADIO COMPANY, LTD.
Typical Characteristics (TJ =25℃ Noted)
LN2302ALT1G , S-LN2302ALT1G
Rev .O 3/5
LESHAN RADIO COMPANY, LTD.
Typical Characteristics (TJ =25℃ Noted)
LN2302ALT1G , S-LN2302ALT1G
Rev .O 4/5
LESHAN RADIO COMPANY, LTD.
LN2302ALT1G , S-LN2302ALT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
DIM
B S
G
C
D
H
K
J
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
A
B
C
D
G
H
J
K
L
S
V
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev .O 5/5