LBAS316T1G

LESHAN RADIO COMPANY, LTD.
High-speed diode
LBAS316T1G
S-LBAS316T1G
DESCRIPTION
The LBAS316T1 is a high-speed switching diode fabricated in
planar technology, and encapsulated in the SOD323(SC76) SMD
1
plastic package.
FEATURES
· Ultra small plastic SMD package
· High switching speed: max. 4 ns
· Continuous reverse voltage: max. 75 V
· Repetitive peak reverse voltage: max. 100 V
· Repetitive peak forward current: max. 500 mA.
· We declare that the material of product compliance with RoHS requirements.
· S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
2
SOD– 323
1
CATHODE
2
ANODE
APPLICATIONS
· High-speed switching in e.g. surface mounted circuits.
ORDERING INFORMATION
Device
Marking
LBAS316T1G
S-LBAS316T1G
Z9
LBAS316T3G
S-LBAS316T3G
Z9
Shipping
3000 Tape & Reel
10000 Tape & Reel
ELECTRICAL CHARACTERISTICS T j =25°C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VF
forward voltage
see Fig.2 I F = 1 mA
I F = 10 mA
I F =50 mA
I F = 150 mA
IR
reverse current
see Fig.4 V R = 25 V
V R =75 V
V R = 25 V; T j = 150 °C
V R = 75 V; T j = 150 °C;
Cd
t rr
diode capacitance
reverse recovery time
V fr
forward recovery voltage
f = 1 MHz; V R = 0; see Fig.5
when switched from I F =10mA to I R = 10mA;
R L = 100 Ω; measured at I R = 1 mA; see Fig.6
when switched from IF = 10 mA; tr = 20 ns; see Fig.7
MAX.
UNIT
715
855
mV
mV
1
1.25
V
V
30
1
nA
µA
30
50
µA
µA
2
4
pF
ns
1.75
V
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
LBAS316T1G,S-LBAS316T1G
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V RRM
VR
VR(RMS)
PARAMETER
CONDITIONS
repetitive peak reverse voltage
continuous reverse voltage
RMS reverse voltage
I FRM
continuous forward current
repetitive peak forward current
I FSM
non-repetitive peak forward current
IF
P tot
T stg
Tj
MAX.
UNIT
–
–
100
75
V
V
–
53
V
–
–
250
500
mA
mA
square wave; T j =25°C prior to
surge; see Fig.3
t =1µs
–
5
A
t =1 ms
t =1 s
–
–
1
0.5
A
A
–
–
-55
–
200
625
+150
150
total power dissipation
thermal resistance junction to ambient air
storage temperature
junction temperature
RqJA
MIN.
mW
°C/W
°C
°C
300
80
200
I F (mA)
60
40
100
20
0
0
25
50
75
100
TEMPERATURE (°C)
125
(1) T j = 150 °C; typical values.
(2)T j =25°C; typical values.
(3) T j =25°C; maximum values.
150
0
0
1
2
V F( V )
Fig.1 Steady State Power Derating
Fig.2 Forward current as a function of
forward voltage.
10 2
10
I FSM (A)
POWER DISSIPATION (%)
100
1
Based on square wave currents;
T j =25°C prior to surge.
10
-1
1
10
102
103
104
t P ( µs )
Fig.3 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Rev.O 2/4
LESHAN RADIO COMPANY, LTD.
LBAS316T1G,S-LBAS316T1G
2.0
10 5
10 4
C d (pF)
I R (nA)
1.6
10 3
0.8
10 2
f = 1 MHz ; T j =25°C;
10
0
100
200
T J ( °C )
Fig.4 Reverse current as a function of junction
temperature.
0
0
4
8
12
16
V R( V )
Fig.5 Diode capacitance as a function of
reverse voltage; typical values.
(1) I R = 1 mA.
Input signal: reverse pulse rise time t r = 0.6 ns; reverse voltage pulse duration t p = 100 ns; duty factor δ = 0.05;
Oscilloscope: rise time t r = 0.35 ns.
Fig.6 Reverse recovery voltage test circuit and waveforms.
Input signal: forward pulse rise time t r = 20 ns; forward current pulse duration t p ≥ 100 ns; duty factor δ ≤ 0.005.
Fig.7 Forward recovery voltage test circuit and waveforms.
Rev.O 3/4
LESHAN RADIO COMPANY, LTD.
LBAS316T1G,S-LBAS316T1G
PACKAGE DIMENSIONS
SOD-323
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
HE
D
b
1
2
E
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1 0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C 0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
HE
2.30
2.50
2.70
A3
A
C
L
NOTE 5
A1
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN
0.031
0.000
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
Rev.O 4/4