30V P-Channel Enhancement

LESHAN RADIO COMPANY, LTD.
30V P-Channel Enhancement-Mode MOSFET
●APPLICATIONS
1) Advanced trench process technology
2) High Density Cell Design For Ultra Low On-Resistance
LP2305LT1G
3) We declare that the material of product are Halogen Free
and compliant with RoHS requirements.
3
1
2
●FEATURES
1) VDS= -30V
2) RDS(ON), Vgs@-10V, Ids@-4.2A = 70m Ω
3) RDS(ON), Vgs@-4.5V, Ids@-4.0A = 85 m Ω
4) RDS(ON), Vgs@-2.5V, Ids@-1.0A = 130m Ω
SOT– 23 (TO–236AB)
3
G
1
●DEVICE MARKING AND ORDERING INFORMATION
Device
LP2305LT1G
LP2305LT3G
Marking
P05
P05
2
Shipping
3000/Tape&Reel
10000/Tape&Reel
D
S
●MAXIMUM RATINGS(Ta = 25℃)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Total Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance-Junction to
Ambient(Note2)
Symbol
Limits
Unit
VDSS
-30
V
VGS
±14
V
-4.2
A
ID
IDM
-30
A
PD
W
1.4
TJ, Tstg –55 to +150 °C
RθJA
140
°C/W
1. Repetitive Rating: Pulse width limited by the Maximum junction temperationr
2. 1-in2 2oz Cu PCB board
May,2015
Rev.B 1/4
LESHAN RADIO COMPANY, LTD.
LP2305LT1G
●ELECTRICAL CHARACTERISTICS (Ta= 25℃)
STATIC
Parameter
Symbol
Min.
Drain−to−Source Breakdown
Voltage
V(BR)DSS
-30
VGS(TH)
Gate Threshold Voltage
-0.7
IDSS
Zero Gate Voltage Drain Current
–
IGSS
Gate−to−Source Leakage Current
–
–
Drain−to−Source On
RDS(on)
–
Resistance(Note3)
–
Forward Diode Voltage
VSD
Forward Transconductance
gFS
7
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Ciss
Coss
Crss
QG
QGS
QGD
td(on)
tr
td(off)
tf
–
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
53
64
86
–
11
826.18
90.74
53.18
6.36
1.79
1.42
11.36
2.32
34.88
3.52
Max. Unit Conditions
–
V VGS = 0 V, ID = -250 μA
-1.3
V VGS = VDS, ID =- 250 μA
-1
μA VDS=-24V, VGS=0V
±100 nA VDS = 0 V, VGS = ±14 V
70 m Ω VGS = -10V, ID =-4.2 A
85 m Ω VGS = -4.5 V, ID =-4 A
130 m Ω VGS = -2.5 V, ID = -1 A
-1
V VGS = 0 V, ISD = -1A
–
S VDS = -5.0 V, ID = -5 A
–
–
–
–
–
–
–
–
–
–
pF
VGS = 0 V, f = 1.0 MHz,
VDS= -15 V
nC VGS =-15 V,VDS = -4.5V
ID = -4A
ns
VDD = -15V, RL =3.6 Ω
ΙD = −1Α, VGEN = -10V
RG = 6 Ω
3. Pulse Test: Pulse width≤300μs, duty cycle ≤2%.
May,2015
Rev.B 2/4
LESHAN RADIO COMPANY, LTD.
LP2305LT1G
ELECTRICAL CHARACTERISTIC CURVES
3
VDS=5V
ID, Drain Current (A)
ID, Drain Current (A)
2.5
2
1.5
1
0.5
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
0
0
0.5
1
1.5
2
VGS, Gate-to-Source Voltage (V)
2.5
0.2
0.4
0.6
0.8
VDS, Drain-to-Source Voltage (V)
VGS=1.6V
FIG.1 Transfer Characteristics
VGS=2.1V
VGS=2.6V
FIG.2 On-Region Characteristics
1.0
RDSon , On Resistance (Ω)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
0.5
SN1 VGS=1.6V
1.0 1.5 2.0 2.5
ID, Drain Current (A)
SN1 VGS=2.1V
3.0
SN1 VGS=2.6V
FIG.3 On-Resistance Versus Drain Current
May,2015
Rev.B 3/4
1
LESHAN RADIO COMPANY, LTD.
LP2305LT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
DIM
B S
G
C
D
H
K
J
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
A
B
C
D
G
H
J
K
L
S
V
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
May,2015
inches
mm
Rev.B 4/4