DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1G S-L2SC3356LT1G DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION Device L2SC3356LT1G S-L2SC3356LT1G L2SC3356LT3G S-L2SC3356LT3G 1 2 Shipping Marking R24 3000/Tape & Reel R24 10000/Tape & Reel SOT-23 FEATURES • We declare that the material of product compliance with RoHS requirements. • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 100 mA Total Power Dissipation PT 200 mW Junction Temperature Tj 150 C Storage Temperature Tstg to +150 C 65 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 1.0 A VCB = 10 V, IE = 0 Emitter Cutoff Current IEBO 1.0 A VEB = 1.0 V, IC = 0 DC Current Gain hFE 82 170 Gain Bandwidth Product fT 7 Feed-Back Capacitance Cre** 0.55 S21e2 11.5 NF 1.1 Insertion Power Gain Noise Figure * SYMBOL 270 VCE = 3 V, IC = 10 mA GHz 1.0 2.0 VCE = 10 V, IC = 20 mA pF VCB = 10 V, IE = 0, f = 1.0 MHz dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz Pulse Measurement PW 350 s, Duty Cycle 2 % * The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. Driver Marking L2SC3356LT1G=R24 Rev.O 1/4 LESHAN RADIO COMPANY, LTD. TYPICAL CHARACTERISTICS (TA = 25 C) L2SC3356LT1G;S-L2SC3356LT1G FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 100 50 0 100 f = 1.0 MHz 1 0.5 0.3 0 150 0.5 1 2 5 10 TA-Ambient Temperature-°C VCB-Collector to Base Voltage-V DC CURRENT GAIN vs. COLLECTOR CURRENT INSERTION GAIN vs. COLLECTOR CURRENT 200 20 30 15 VCE = 10 V |S21e|2-Insertion Gain-dB hFE-DC Current Gain Cre-Feed-back Capacitance-pF PT-Total Power Dissipation-mW 2 Free Air 100 50 20 10 5 VCE = 10 V f = 1.0 GHz 10 0.5 1 5 10 0 0.5 50 1 5 10 50 70 IC-Collector Current-mA IC-Collector Current-mA INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Gmax 5.0 Gmax-Maximum Gain-dB |S21e|2-Insertion Gain-dB fT-Gain Bandwidth Product-MHz 10 3.0 2.0 1.0 0.5 0.3 20 |S21e|2 10 0.2 VCE = 10 V 0.1 0 0.5 1.0 5.0 10 IC-Collector Current-mA 30 0 VCE = 10 V IC = 20 mA 0.1 0.2 0.4 0.6 0.81.0 2 f-Frequency-GHz Rev.O 2/4 LESHAN RADIO COMPANY, LTD. L2SC3356LT1G;S-L2SC3356LT1G NOISE FIGURE vs. COLLECTOR CURRENT |S21e|2-Insertion Gain-dB 6 NF-Noise Figure-dB 18 VCE = 10 V f = 1.0 GHz 5 4 3 2 15 12 6 3 NF-Noise Figure-dB 7 NOISE FIGURE, FORWARD INSERTION GAIN vs. COLLECTOR TO EMITTER VOLTAGE 5 f = 1.0 GHz IC = 20 mA 4 2 |S21e| 3 2 NF 1 1 0 0.5 1 5 10 IC-Collector Current-mA 50 70 0 0 2 4 6 8 10 VCE-Collector to Emitter Voltage-V Rev.O 3/4 LESHAN RADIO COMPANY, LTD. L2SC3356LT1G;S-L2SC3356LT1G SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI L Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 4/4