20V P-Channel Enhancement

LESHAN RADIO COMPANY, LTD.
20V P-Channel Enhancement-Mode MOSFET
LP3415ELT1G
S-LP3415ELT1G
VDS= -20V
RDS(ON), Vgs@-4.5V, Ids@-4A = 60 mΩ
RDS(ON), Vgs@-2.5V, Ids@-4A = 75 mΩ
RDS(ON), Vgs@-1.8V, Ids@-2A = 85 mΩ
3
Features
Advanced trench process technology
1
High Density Cell Design For Ultra Low On-Resistance
2
we declare that the material of product
SOT– 23 (TO–236AB)
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
3
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
▼ Simple Drive Requirement
▼ Small Package Outline
1
▼ Surface Mount Device
2
Ordering Information
Device
Shipping
Marking
LP3415ELT1G
S-LP3415ELT1G
LP3415ELT3G
S-LP3415ELT3G
P15
3000/Tape& Reel
P15
10000/Tape& Reel
Maximum Ratings and Thermal Characteristics (TA= 25oC unless otherwise noted)
Symbol
Limit
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
±8
Continuous Drain Current
ID
-4
Pulsed Drain Current 1)
IDM
-30
Parameter
o
Maximum Power Dissipation
TA = 25 C
PD
o
TA = 75 C
V
A
1
W
0.6
Operating Junction and Storage Temperature Range
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance (PCB mounted)
Unit
2)
TJ, Tstg
-55 to 150
RqJC
100
RqJA
150
o
o
C
C/W
Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation
2. 1-in2 2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
Rev .O 1/3
LESHAN RADIO COMPANY, LTD.
LP3415ELT1G , S-LP3415ELT1G
ELECTRICAL CHARACTERISTICS
Parameter
Test Condition
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = -250uA
Drain-Source On-State Resistance
RDS(on)
VGS = -1.8V, ID = -2A
85.0
Drain-Source On-State Resistance
RDS(on)
VGS = -2.5V, ID = -4A
75.0
Drain-Source On-State Resistance
RDS(on)
VGS = -4.5V, ID = -4A
60.0
Gate Threshold Voltage
VGS(th)
VDS =VGS, ID = -250uA
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage
Gate Resistance
-20
V
-0.3
mΩ
-1
V
VDS = -16V, VGS = 0V
-1
uA
IGSS
VGS = ± 8V, V DS = 0V
±10
uA
Rg
VDS = 0V, f = 1.0MHz
Ω
6.5
3)
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS =-10V, ID = -4A
VGS = -4.5V
VDD = -10V, RL = 2.5Ω
ID = -1A, VGEN = -4.5V
RG = 3Ω
4.59
5.97
2.14
2.78
2.51
3.26
965.2
1930.4
1604
3208
7716
15432
3452
6904
nC
ns
36.45
VDS = -10V, VGS = 0V
f = 1.0 MHz
pF
128.57
15.17
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
IS
VSD
IS = -1A, VGS = 0V
-2.2
A
-1
V
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
3. Guaranteed by design; not subject to production testing
Rev .O 2/3
LESHAN RADIO COMPANY, LTD.
LP3415ELT1G , S-LP3415ELT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
A
B
C
D
G
H
J
G
C
D
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
DIM
B S
H
K
J
K
L
S
V
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev .O 3/3