2SC1906 Silicon NPN Epitaxial Planar REJ03G0693-0200 (Previous ADE-208-1058) Rev.2.00 Aug.10.2005 Application • VHF amplifier • Mixer, Local oscillator Outline RENESAS Package code: PRSS0003DA-C (Package name: TO-92 (2)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Rev.2.00 Aug 10, 2005 page 1 of 6 Symbol VCBO VCEO VEBO IC IE PC Ratings 30 19 2 50 –50 300 Unit V V V mA mA mW Tj Tstg 150 –55 to +150 °C °C 2SC1906 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Gain bandwidth product Collector output capacitance Collector to emitter saturation voltage Base time constant Power gain Rev.2.00 Aug 10, 2005 page 2 of 6 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE fT Cob VCE(sat) rbb’ • CC Min 30 19 2 — 40 600 — — — Typ — — — — — 1000 1.0 0.2 10 Max — — — 0.5 — — 2.0 1.0 25 Unit V V V µA MHz pF V ps PG — 33 — dB — 18 — dB Test conditions IC = 10 µA, IE = 0 IC = 3 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz IC = 20 mA, IB = 4 mA VCB = 10 V, IC = 10 mA, f = 31.8 MHz f = 45 MHz VCE = 10 V, IC = 5 mA VCE = 10 V, IC = 5 mA f = 200 MHz 2SC1906 Main Characteristics Typical Output Characteristics 20 150 120 12 100 80 8 60 40 4 IB = 20 µA 0 4 VCE = 10 V 12 8 4 0.2 0.4 0.6 0.8 100 40 20 0 0.1 0.2 1.0 Gain Bandwidth Product fT (MHz) 90 fT z MH ,0 =1 8 4 600 500 4 8 12 16 20 Collector to Emitter Voltage VCE (V) Rev.2.00 Aug 10, 2005 page 3 of 6 5 10 20 50 100 Gain Bandwidth Product vs. Collector Current 0 700 800 12 0.5 1.0 2 Collector Current IC (mA) 20 00 VCE = 10 V 60 Gain Bandwidth Product Curve Collector Current IC (mA) 20 80 Base to Emitter Voltage VBE (V) 0 16 120 DC Current Transfer Ratio hFE Collector Current IC (mA) 20 16 12 DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics 0 8 Collector to Emitter Voltage VCE (V) Ambient Temperature Ta (°C) 16 W 100 50 140 m 0 0 100 160 16 30 200 180 = Collector Current IC (mA) 300 PC Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 1,200 1,000 VCE = 10 V f = 100 MHz 800 600 400 200 0 0.1 0.3 1.0 3 10 30 Collector Current IC (mA) 100 2SC1906 Base Time Constant vs. Collector Currnt Input Admittance vs. Frequency 12 100 Input Suceptance bie (mS) VCB = 10 V f = 31.8 MHz 50 20 10 5 2 0.1 0.2 0.5 1.0 2 5 10 8 100 6 4 50 yie = gie+jbie VCE = 9 V f = 25 MHz 2 2 4 6 10 8 Output Admittance vs. Frequency Reverse Transfer Admittance vs. Frequency 5 IC = 1 mA 2 12 250 8 4 200 3 2 yoe = goe+jboe VCE = 9 V 100 1 50 f = 25 MHz 0.2 0.4 0.6 1.0 0.8 1.2 Reverse Transfer Suceptance bre (mS) Output Suceptance boe (mS) 200 Input Conductance gie (mS) 0 Forward Transfer Suceptance bfe (mS) 10 12 mA 250 Collector Current IC (mA) 6 4 2 mA 4 mA 8 mA IC = 1 mA 0 0 f = 25 MHz 50 yre = gre+jbre VCE = 9 V –0.4 100 –0.8 200 –1.2 250 IC = 21 mA 8 4 2 1 –1.6 –2.0 –0.10 –0.08 –0.06 –0.04 –0.02 Forward Transfer Admittance vs. Frequency Conversion Gain vs. Local Oscillating Injection Voltage 17 IC = 1 mA 0 yfe = gfe+jbfe VCE = 9 V 2 –20 4 –40 –60 25f = MH z2 00 8 15 0 –100 100 80 60 80 50 12 25 16 15 VCB = 9 V IE = 3.5 mA fs = 200 MHz fosc = 245 MHz fIF = 45 MHz Emitter Inject 14 13 12 11 10 –120 0 0 Reverse Transfer Conductance gre (mS) 20 –80 12 Output Conductance goe (mS) Conversion Gain CG (dB) Base time Constant rbb'•CC (ps) 200 20 40 100 120 140 Forward Transfer Conductance gfe (mS) Rev.2.00 Aug 10, 2005 page 4 of 6 0 0.1 0.2 0.3 Injection Voltage Vinj (V) 2SC1906 Conversion Gain vs. Emitter Current Conversion Gain CG (dB) 18 16 14 VCB = 9 V Vinj = 150 mV fs = 200 MHz fosc = 245 MHz fIF = 45 MHz Emitter Inject 12 10 8 6 4 0 –1 –2 –3 –4 –5 –6 Emitter Current IE (mA) Rev.2.00 Aug 10, 2005 page 5 of 6 –7 2SC1906 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-43A PRSS0003DA-C TO-92(2) / TO-92(2)V 0.25g 4.8 ± 0.3 Unit: mm 2.3 Max 0.7 0.60 Max 0.5 Max 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 Max 1.27 2.54 Ordering Information Part Name 2SC1906TZ-E Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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