LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Cathode LBAV70M3T5G FETURE • We declare that the material of product 3 compliance with RoHS requirements. 2 ORDERING INFORMATION Device LBAV70M3T5G 1 Marking A4 Shipping SOT–723 8000 Tape & Reel MAXIMUM RATINGS (TA = 25°C) 1 ANODE 3 CATHODE Rating Symbol Max Unit Reverse Voltage Forward Current Peak Forward Surge Current VR IF 70 200 500 Vdc mAdc mAdc Max 265 Unit mW 2.1 470 640 mW/°C °C/W mW 5.1 195 –55 to +150 mW/°C °C/W °C IFM(surge) 2 ANODE THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation FR–5 Board(1) PD TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient RθJA Total Device Dissipation PD Alumina Substrate(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient RθJA Junction and Storage Temperature TJ, Tstg ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR) 70 — Vdc — — — 60 2.5 100 — 1.5 — — — — 715 855 1000 1250 — 6.0 OFFCHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 µAdc) Reverse Voltage Leakage Current (VR = 25 Vdc,TJ=150°C) (VR = 70 Vdc) (VR = 70 Vdc,TJ=150°C) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Reverse Recovery Time RL=100Ω (IF= IR=10 mAdc, VR=5.0Vdc, IR(REC)= 1.0 mAdc) (Figure 1) µAdc IR CD VF trr pF mVdc ns 1. FR–5 = 1.0 × 0.75 × 0.062 in. 2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina. 1/3 LESHAN RADIO COMPANY, LTD. LBAV70M3T5G 820 Ω +10 V 2.0 k 100 µH tr 0.1 µF IF tp IF t trr 10% t 0.1 µF 90% D.U.F. 50 Ω INPUF SAMPLING OSCILLOSCOPE 50 Ω OUFPUF PULSE GENERAFOR IR VR INPUF SIGNAL iR(REC) = 1.0 mA OUFPUF PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit Curves Applicable to Each Anode 10 IR , REVERSE CURRENF (µA) FA = 85°C 10 FA = -ā40°C 1.0 0.1 FA = 25°C 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLFAGE (VOLFS) 1.2 FA = 150°C FA = 125°C 1.0 FA = 85°C 0.1 FA = 55°C 0.01 0.001 FA = 25°C 0 10 Figure 2. Forward Voltage 50 20 30 40 VR, REVERSE VOLFAGE (VOLFS) Figure 3. Leakage Current 1.0 CD, DIODE CAPACIFANCE (pF) IF, FORWARD CURRENF (mA) 100 0.9 0.8 0.7 0.6 0 2 4 6 8 VR, REVERSE VOLFAGE (VOLFS) Figure 4. Capacitance 2/3 LESHAN RADIO COMPANY, LTD. LBAV70M3T5G SOT−723 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D A b1 −Y− 3 E 1 e HE L 2 b 2X 0.08 (0.0032) X Y C STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR DIM A b b1 C D E e HE L MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.21 0.27 0.15 0.25 0.31 0.37 0.12 0.17 0.07 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.20 0.25 0.15 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 SOLDERING FOOTPRINT* 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm inches 3/3