General Purpose Transistors NPN Silicon

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
L8050PLT1G
Series
S-L8050PLT1G
Series
FEATURE
ƽHigh current capacity in compact package.
IC = 0.8A.
3
ƽEpitaxial planar type.
ƽNPN complement: L8050
ƽPb-Free Package is available.
1
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
2
SOT–23
DEVICE MARKING AND ORDERING INFORMATION
Device
COLLECTOR
3
Shipping
Marking
3000/Tape&Reel
L8050PLT1G
S-L8050PLT1G
80P
L8050PLT3G
S-L8050PLT3G
80P
10000/Tape&Reel
L8050QLT1G
S- L8050QLT1G
1YC
3000/Tape&Reel
L8050QLT3G
S-L8050QLT3G
1YC
10000/Tape&Reel
L8050RLT1G
S-L8050RLT1G
1YE
3000/Tape&Reel
L8050RLT3G
S-L8050RLT3G
1YE
10000/Tape&Reel
L8050SLT1G
S-L8050SLT1G
80S
3000/Tape&Reel
L8050SLT3G
S-L8050SLT3G
80S
10000/Tape&Reel
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-continuoun
VCEO
VCBO
VEBO
IC
25
40
5
800
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Max
Unit
TA=25°C
225
mW
Derate above 25°C
1.8
mW/°C
556
°C/W
Alumina Substrate,(2) TA=25°C
300
mW
Derate above 25°C
2.4
mW/°C
R θJ A
417
°C/W
T j,T St g
-55 to +150
°C
Total Device Dissipation FR-5 Board,(1)
Thermal Resistance,Junction to Ambient
Total Device Dissipation
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJ A
PD
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
L8050PLT1G
Series
S-L8050PLT1G
Series
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)CEO
25
–
–
V
V(BR)EBO
5
–
–
V
V(BR)CBO
40
–
–
V
Collector Cutoff Current (VCB=35V)
ICBO
–
–
150
nA
Emitter Cutoff Current (VEB=4V)
IEBO
–
–
150
nA
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=1.0mA)
Emitter-Base Breakdown Voltage
(IE=100µΑ)
Collector-Base Breakdown Voltage
(IC=100µΑ)
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Charateristic
Symbol
Min
hFE
100
VCE(sat)
-
Typ
Max
Unit
DC Current Gain
IC=100mA,VCE=1V
-
600
Collector-Emitter Saturation Voltage
(IC=800mA, IB =80mA)
NOTE :
*
P
Q
hF E
100~200
150~300
R
200-400
-
0.5
V
S
300-600
Rev.O 2/4
LESHAN RADIO COMPANY, LTD.
L8050PLT1G
Series
S-L8050PLT1G
Series
FIG.1 - Current Gain & Collector Current
FIG.2 - Saturation Voltage & Collector Current
1
1000
Saturation Voltage (V)
VCE=1V
hFE
100
10
0.1
VCE(sat) @ IC=10IB
1
0.001
0.01
0.01
0.1
1
10
100
0.01
1000
Collector Current (mA)
0.1
1
10
100
1000
Collector Current (mA)
FIG.3 - On Voltage & Collector Current
FIG.4 - Cutoff Frequency & Collector Current
1000
1
Cutoff Frequency (MHz)
VCE=10V
On Voltage (V)
VBE(ON) @ VCE=1V
0.1
100
10
1
0.01
0.1
1
10
100
1000
1
10
100
1000
Collector Current (mA)
Collector Current (mA)
FIG.5 - Capacitance & Reverse-Biased Voltage
Capacitance (pF)
100
10
Cob
1
0.1
1
10
100
Reverse-Biased Voltage (V)
Rev.O 3/4
LESHAN RADIO COMPANY, LTD.
L8050PLT1G
Series
S-L8050PLT1G
Series
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
DIM
B S
G
C
D
H
K
J
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
A
B
C
D
G
H
J
K
L
S
V
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 4/4