LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LMBT2222ALT1G S-LMBT2222ALT1G ●FEATURES 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 2 SOT-23 ●DEVICE MARKING AND ORDERING INFORMATION Shipping Device Marking 3000/Tape&Reel LMBT2222ALT1G 1P 10000/Tape&Reel LMBT2222ALT3G 1P ●MAXIMUM RATINGS(Ta = 25℃) Parameter Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous ●THERMAL CHARACTERISTICS Total Device Dissipation, FR−5 Board (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction–to–Ambient(Note 1) Total Device Dissipation, Alumina Substrate (Note 2) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction–to–Ambient Junction and Storage temperature Symbol VCEO VCBO VEBO IC Limits 40 75 6.0 600 Unit Vdc Vdc Vdc mAdc 225 1.8 556 mW mW/℃ ℃/W RΘJA 300 2.4 417 mW mW/℃ ℃/W TJ,Tstg −55∼+150 ℃ PD RΘJA PD 1. FR–5 = 1.0×0.75×0.062 in. 2. Alumina = 0.4×0.3×0.024 in. 99.5% alumina. June,2015 Rev.A 1/6 LESHAN RADIO COMPANY, LTD. LMBT2222ALT1G,S-LMBT2222ALT1G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) OFF CHARACTERISTICS Characteristic Symbol VBR(CEO) Collector–Emitter Breakdown Voltage (IC = 10 mAdc, I B = 0) VBR(CBO) Collector–Base Breakdown Voltage (I C = 10 μAdc, I E = 0) Emitter–Base Breakdown Voltage VBR(EBO) (I E = 10 μAdc, I C = 0) Collector Cutoff Current ICEX ( V CE = 60 Vdc, V EB(off) = 3.0Vdc) Collector Cutoff Current ICBO (V CB = 60 Vdc, I E = 0) (V CB = 60 Vdc, I E = 0, TA = 125°C) Emitter Cutoff Current IEBO (V EB = 3.0 Vdc, I C = 0) Base Cutoff Current IBL (V CE = 60 Vdc, V EB(off) = 3.0 Vdc) ON CHARACTERISTICS (Note 1.) DC Current Gain hFE (I C = 0.1 mAdc, V CE = 10 Vdc) (I C = 1.0 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc,T A= –55°C ) (I C = 150 mAdc, V CE = 10 Vdc) (3) (I C = 150 mAdc, V CE = 1.0 Vdc) (3) (I C = 500 mAdc, V CE = 10 Vdc)(3) Collector–Emitter Saturation Voltage(3) VCE(sat) (I C = 150 mAdc, I B = 15 mAdc) (I C = 500mAdc, I B = 50 mAdc) Base–Emitter Saturation Voltage VBE(sat) (I C = 150 mAdc, I B = 15 mAdc) (I C = 500mAdc, I B = 50 mAdc) Min. Typ. Max. 40 – – 75 – – 6 – – – – 10 – – – – 0.01 10 – – 100 – – 20 35 50 75 35 100 50 40 – – – – – – – – – – – 300 – – – – – – 0.3 1 0.6 – – – 1.2 2 Unit V V V nA μA nA nA V V 3. Pulse Test: Pulse Width <300 μs, Duty Cycle <2.0%. June,2015 Rev.A 2/6 LESHAN RADIO COMPANY, LTD. LMBT2222ALT1G,S-LMBT2222ALT1G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) SMALL–SIGNAL CHARACTERISTICS Characteristic Symbol fT Current–Gain — Bandwidth Product(4) (I C = 20mAdc, V CE= 20Vdc, f = 100MHz) Cobo Output Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Cibo Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Input Impedance hie (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Voltage Feedback Ratio hre (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Small–Signal Current Gain hfe (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Output Admittance hoe (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Collector Base Time Constant rb,Cc (V CB= 20 Vdc, I E = 20 mAdc, f = 31.8 MHz) Noise Figure NF (VCE=10V, IC=100μA, RS=1.0kΩ , f =1.0kHz) SWITCHING CHARACTERISTICS Delay Time (V CC = 30 Vdc, V EB(off) = – 0.5 Vdc,I C = 150 Rise Time mAdc, I B1 = 15 mAdc) Storage Time Fall Time (V CC = 30 Vdc, I C = 150 mAdc,I B1 = I B2 = 15 mAdc) Min. Typ. Max. 300 – – – – 8 – – 25 Unit MHz pF pF kΩ 0.25 1.25 X 10 – – 4 75 – 375 25 – 200 –4 μmhos ps – – 150 dB – – 4 td – – 10 tr – – 25 ts – – 225 tf – – 60 ns 4.fT is defined as the frequency at which h fe extrapolates to unity. June,2015 Rev.A 3/6 LESHAN RADIO COMPANY, LTD. LMBT2222ALT1G,S-LMBT2222ALT1G ELRCTRICAL CHARACTERISTICS CURVES 1.0 VCE, Collector-Emitter Voltage (V) HFE, DC Current Gain 1000 100 10 0.0001 0.001 0.01 0.1 IC, Collector Current (A) VCE=1V -55℃ VCE=10V -55℃ VCE=1V 25℃ VCE=10V 25℃ VCE=1V 125℃ VCE=10V 125℃ 1 Tj=25℃ 0.8 0.6 0.4 0.2 0.0 0.0000010.00001 0.0001 0.001 0.01 IB, Base Current (A) IC=1mA Figure1. DC Current Gain 1 0.1 -55℃ 25℃ 150℃ Figure 3. Collector Emitter Saturation Voltage vs. Collector Current June,2015 1 VBEsat, Base-Emitter Saturation Voltage (V) VCEsat, Collector-Emitter Saturation Voltage (V) IC/IB=10 0.01 0.1 IC, Collector Current (A) IC=150mA 1 IC=500mA Figure 2. Collector Saturation Region 10 0.01 0.001 IC=10mA 0.1 1.6 IC/IB=10 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.001 0.01 0.1 IC, Collector Current (A) -55℃ 25℃ 150℃ Figure 4. Base Emitter Saturation Voltage vs. Collector Current Rev.A 4/6 1 LESHAN RADIO COMPANY, LTD. LMBT2222ALT1G,S-LMBT2222ALT1G 3.5E-11 VCE=1V 1.6 3.0E-11 Capacitance(F) 1.4 1.2 1.0 0.8 2.5E-11 2.0E-11 1.5E-11 0.6 1.0E-11 0.4 5.0E-12 0.2 0.001 0.01 0.1 IC, Collector Current (A) -55℃ 25℃ 1 150℃ 0.0E+00 0.1 1 10 VR, Reverse Voltage (V) Cobo Figure 5. Base Emitter Voltage vs. Collector Current 100 Cibo Figure 6. Capacitance 1000 VCE=1V 100 fT(MHz) VBEon, Base-Emitter Voltage (V) 1.8 10 1 0.0001 0.001 0.01 0.1 1 IC,Collector Current (A) Figure 7. Current−Gain Bandwidth Product June,2015 Rev.A 5/6 LESHAN RADIO COMPANY, LTD. LMBT2222ALT1G,S-LMBT2222ALT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 DIM B S G C D H K J MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 A B C D G H J K L S V INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 June,2015 inches mm Rev.A 6/6