LESHAN RADIO COMPANY, LTD. PNP Epitaxial Silicon Transistor L9012 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to L9013 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -40 Units V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V mA IC Collector Current -500 PC Collector Power Dissipation 625 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = -100µA, IE =0 Min. -40 BVCEO BVEBO Collector-Emitter Breakdown Voltage IC = -1mA, IB =0 -20 Emitter-Base Breakdown Voltage IE = -100µA, IC =0 -5 ICBO Collector Cut-off Current VCB = -25V, IE =0 IEBO Emitter Cut-off Current VEB = -3V, IC =0 hFE1 hFE2 DC Current Gain VCE = -1V, IC = -50mA VCE = -1V, IC = -500mA VCE (sat) Collector-Emitter Saturation Voltage VBE (sat) Base-Emitter Saturation Voltage VBE (on) Base-Emitter On Voltage VCE = -1V, IC = -10mA Typ. Max. Units V V V 64 30 -100 nA -100 nA 120 300 IC = -500mA, IB = -50mA -0.18 -0.6 V IC = -500mA, IB = -50mA -0.95 -1.2 V -0.67 -0.7 V -0.6 hFE Classification Classification D F G hFE1 64 ~ 96 96 ~ 135 112 ~ 166 H 144 ~ 202 I 202 ~ 300 L9012-1/2 LESHAN RADIO COMPANY, LTD. TO-92 ＳＩＺＥ ＬＩＳＴ（ｍｍ） Ａ１ ４．５±０．１ Ｐ１ ６．３５±０．４ ＨＯ １６．０±０．５ Ａ ４．５±０．１ Ｆ１ ／Ｆ２ ２．５（＋０．６，－０．３） Ｈ１ Ｔ ３．９±０．１ △ｈ ０±２．０ ＤＯ ４．０±０．２ ｄ ０．４２±０．０１ Ｗ １８．０（＋１．０，－０．５） ｔ ０．６±０．２ ｌ１ ２．５（ｍｉｎ） ＷＯ ６．０±０．３ Ｌ１ １１．０（ｍａｘ） Ｐ １２．７±１．０ Ｗ１ ９．０（＋０．７５，－０．５） △Ｐ ０±１．０ ＰＯ １２．７±０．２ Ｗ２ ０．５（ｍａｘ） L9012-2/2